Junções túnel com eletrodos ferromagnéticos (Py/AlOx/Co) foram produzidas usando a técnica de desbastamento iônico e depositadas sobre condições de oxidação que garantem baixa altura da barreira de potencial, baixa assimetria da barreira, forte dependência da magnetorresistência túnel com a tensão aplicada e o tunelamento quântico como mecanismo de transporte eletrônico. As amostras foram produzidas com o objetivo de corroborar um modelo recentemente publicado e que prevê inversão da magnetorresistência túnel com a tensão aplicada devido à baixa altura do potencial da barreira. As medidas de magneto-transporte eletrônico (resistência de tunelamento em função do campo magnético aplicado) mostram uma inversão da magnetorresistência túnel com a tensão aplicada para temperatura constante de 77 K. O sistema (Py/AlOx/Co) é bem conhecido por apresentar magnetorresistência positiva onde a altura da barreira de potencial é geralmente igual ou maior a 2,0 eV (Moodera et al. 1995 e Boeve et al. 2000). Esta inversão não foi anteriormente reportada e se deve preferencialmente à baixa altura do potencial da barreira e à forte dependência com a tensão aplicada. A explicação física para a inversão é baseada no fator de coerência quântica, D(Ex , V), como previsto por Li et al. (2004a,b) e Ren et al. (2005) para a região de tensão intermediária. Ajustes às curvas I-V, medidas a temperatura ambiente, com os modelos de Simmons (1963b,c), Simmons (1964) e Chow (1965) mostram valores menores que os reportados anteriormente para a altura do potencial da barreira (≈ 1,0 eV) e barreiras com baixa assimetria (≈ 0,2 eV). Também, as curvas I-V para temperatura ambiente e baixa temperatura, as curvas I-T para tensão constante e o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira mostram que o tunelamento quântico é um mecanismo de transporte eletrônico. Este resultado sugere a possibilidade de constatar o aparecimento de áreas efetivas de tunelamento e indicando a presença de uma distribuição não uniforme da corrente de tunelamento. O efeito combinado da baixa altura da barreira de potencial, da baixa assimetria da barreira, da forte dependência da magnetorresistência túnel com a tensão aplicada e do tunelamento quântico como mecanismo de transporte eletrônico possibilitaram não somente a inversão da magnetorresistência túnel com a tensão aplicada, mas também o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira. / Tunneling junctions with ferromagnetic electrodes (Py/AlOx/Co) were produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism. The samples were deposited to verify a recently published model which predicts tunneling magnetoresistance inversion with applied bias due to low enough potential barrier height. Electronic transport measurements (tunneling resistance as a function of the applied magnetic field) show inverse (negative) tunneling magnetoresistance with applied bias at 77 K. Tunneling junctions of (Py/AlOx/Co) are well known positive magnetoresistance system where the potential barrier height is usually equal or higher than 2.0 eV (Moodera et al., 1995 e Boeve et al., 2000). This inverted tunneling magnetoresistance behavior has not been reported before and is due mainly to the low potential barrier height and the strong bias dependence The physical explanation for the inversion is based on the quantum coherence factor, D(Ex , V), following the Li et al. (2004ab) and Ren et al. (2005) model for intermediate voltage range. Room temperature I-V curves fitted with both Simmons’ (1963b,c), Simmons’ (1964) and Chow’s (1965) models showed potential barrier height values (≈ 1.0 eV), lower than those previously reported, and low asymmetry of the barrier (≈ 0.2 eV). Also, I-V curves for room and low temperature, I-T curves for constant applied bias and the exponential growth of the tunneling resistance as a function of the effective barrier thickness showed quantum tunneling as the charge transport mechanism. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution. The combined effect of low potential barrier height, low barrier asymmetry, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism allowed not only the tunneling magnetoresistance inversion with applied bias but also, the exponential growth of the tunneling resistance as a function of the effective barrier thickness.

La surface de Fermi du bismuth est composée d'une poche de trous parabolique et de trois vallées d'électrons de Dirac équivalentes à une rotation près. Leur masse effective est faible (m* ~ 10-3 me) et très anisotrope (m1 ~ 200 m2). Ces propriétés électroniques remarquables, combinées à une densité de porteurs très faible (n=3.10-17 cm-3) et une très grande mobilité (µ ~ 108 cm2/V/s), impliquent que la magnétorésistance du bismuth est très grande et très sensible à l'orientation du champ magnétique. Au cours de cette thèse, nous avons réalisé la cartographie en température et champ magnétique de la dépendance angulaire de la magnétorésistance transverse dans les trois plans de haute symétrie. Nous avons ensuite confronté nos données aux attentes du modèle semi classique. Cela a permis de vérifier la pertinence du modèle semi-classique d'une part et d'extraire les composantes du tenseur de mobilité d'autre part. Nous trouvons que toutes les composantes du tenseur de mobilité suivent une dépendance en température qui est proche de T-2, suggérant la prédominance de l'interaction électron-électron. Une transition de phase au cours de laquelle la dépendance angulaire de la magnétorésistance perd la symétrie rotationnelle du réseau cristallin a été mise en évidence. L'étude de la dépendance angulaire de l'effet magnéto-Seebeck a révélé des oscillations similaires à celles de la résistivité. Leur explication nécessite d'aller au-delà du modèle semi-classique. Finalement, l'anisotropie et l'évolution avec le champ magnétique du pouvoir thermoélectrique et de la figure de mérite du bismuth pur et d'un alliage d'antimoine sont étudiées. / Bismuth Fermi surface is composed of one parabolic hole pocket and three equivalent Dirac electrons valleys. The electrons effective mass is low (m* ~ 10-3 me) and very anisotropic (m1 ~ 200 m2). These exceptional electronic properties, combined with a very low carrier density (n=3.10-17 cm-3) and a very large mobility (µ ~ 108 cm2/V/s) imply that bismuth magnetoresistance is very large and very sensitive to the orientation of the magnetic field. During this thesis, we mapped in temperature and magnetic field the angular dependence of transverse magnetoresistance in the three high symmetry planes. Our datas are then fitted by a semi-classical model. This permits to examine the relevance of the semi-classical theory and to extract the mobility tensors components. We find that all mobility tensor components have a temperature dependence close to a T-2, which suggests that the electron-electron interaction is the main diffusion mechanism. At low temperature and high magnetic field, a phase transition induces the loss of the lattice rotational symmetry in angular dependence magnetoresistance measurement. The angular dependence of magneto-Seebeck effect shows the same oscillations as magnetoresistance. Their explanation requires to go beyond the semi-classical model. Finally, magnetic field dependence and anisotropy of thermoelectric power and thermoelectric figure of merit of pure bismuth and a bismuth-antimony alloy are studied.

Orientador: Guillermo Gerardo Cabrera Oyarzún / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-18T12:28:58Z (GMT). No. of bitstreams: 1 Fernandes_ImaraLima_M.pdf: 9006612 bytes, checksum: accaacf2ec8bab2326612b97e18b9b16 (MD5) Previous issue date: 2011 / Resumo: Neste trabalho, apresentamos um estudo do tunelamento e do transporte quântico em sistemas mesoscópicos, particularmente em junções de tunelamento magnéticas, visando esclarecer a polarização magnética da corrente de tunelamento. Nos dispositivos de tunelamento, um filme isolante é crescido entre os eletrodos ferromagnéticos. Nesse sistema a condutância é controlada pelo coeficiente de transmissão do efeito túnel. Nos metais de transição (Fe, Co, Ni), as bandas s, p e d contribuem para a condução eletrônica, entretanto a magnetização deve-se à polarização das bandas d. Resultados experimentais mostram que essa polarização da corrente pode ser muito diferente da polarização do volume no nível de Fermi, podendo até estar invertida. Qualitativamente sabe-se que os elétrons da banda d apresentam menor probabilidade de tunelamento do que os elétrons s ou p. Os elétrons de condução do tipo s são representados por ondas planas com vetores de onda pequenos (centro da zona de Brillouin). Já os elétrons d possuem maior massa efetiva e um caráter localizado, portanto, são representados por pacotes de muitas componentes de ondas planas com vetores de onda maiores. Estudamos o tunelamento desses elétrons por barreiras de potencial que representam o material isolante entre eletrodos metálicos. Propomos um modelo simples para a corrente de tunelamento e estimamos o efeito da magnetoresitência / Abstract: This work introduces a detailed study of tunneling and quantum transport in mesoscopic systems, particularly in tunneling magnetic junctions, to understand the magnetic polarization of the tunneling current. These systems consist of two ferromagnetic metal layers separated by a thin insulating barrier layer. The conductance is controlled by the transmission coeficient of the tunnel effect. In the transition metal (Fe, Co, Ni), the bands s, p and d contribute to the electronic conduction, however, to the magnetization only the d-band contributes. Experimental results show that the current polarization may be different of the bulk polarization in the Fermi level and may be reversed. Qualitatively it is known that tunneling probability of the d-like electrons is lower than the s-like and p-like electrons. The s-electrons are represented by wave planes with small wave vector (center of the Brillouin zone). Since the d-electrons have higher effective mass and they are localized states, they are represented by wave packet with many components of wave planes with larger wave vectors. We investigate the tunneling of these electrons through potential barriers, which represent the insulating layer between the ferromagnetic electrodes. We propose a simple model for the tunneling current and estimated the effect of the magnetoresistance / Mestrado / Física da Matéria Condensada / Mestra em Física

Válvulas de Spin têm sido utilizadas na fabricação de sensores magnéticos e memórias de acesso randômico, sendo muito importantes do ponto de vista tecnológico. Neste trabalho, foram exploradas as análises das curvas de reversão de primeira ordem da magnetorresistência (MR-FORC), bem como ajustes das curvas de histereses da magnetização e magnetorresistência, para estudar o fenômeno de exchange-bias, anisotropia magnética e propriedades magnetorresistivas. As válvulas de spin estudadas foram do tipo NiFe/Cu/NiFe/IrMn, tendo camadas semente e de cobertura de Ta, preparadas por sputtering. Um modelo fenomenológico de parede de domínios no material antiferromagnético (AFM) foi utilizado, levando em conta as anisotropias magnéticas e interações entre as camadas. Também foram consideradas certas dispersões da anisotropia dos grãos ferromagnéticos (FM) e antiferromagnéticos (com distribuições Gaussianas) em torno dos respectivos eixos de anisotropia uniaxiais. Para o ajuste da magnetização para algumas amostras, foi necessário utilizar uma rotação no plano de um ângulo nos eixos de anisotropia uniaxiais do FM e AFM, em relação à direção do campo magnético aplicado durante a deposição dos filmes. Bons ajustes das curvas de histereses das magnetizações foram obtidos nas direções medidas do campo magnético aplicado. Um método baseado em medidas de variações angulares da magnetorresistência em campos constantes foi proposto para extrair este ângulo para cada amostra. Foram obtidas razoáveis concordâncias entre estes ângulos e os correspondentes extraídos dos ajustes das curvas de magnetização. Através da análise dos diagramas da MR-FORC e de simulações indicados dos resultados dos ajustes das histereses da magnetização, foi encontrada uma relação direta entre os campos de interação (e suas incertezas) com os campos de exchange-bias (HEB) dos grãos da distribuição (extraídos das simulações, usando a largura da distribuição obtida do ajuste). Resumindo, esta análise mostrou que esta técnica permite extrair informações comparativas sobre a dispersão dos eixos de anisotropia dos grãos FM e AFM em torno do eixo de anisotropia uniaxial, o que pode ser importante na caracterização dos sensores magnetorresistivos. Além disso, análise dos diagramas MR-FORC indicaram início da presença de descontinuidade na camada de NiFe presa em 27, com um aumento acentuado (acima do previsto) para a amostra com 25. Este aumento acima do previsto corrobora com nossa hipótese. As simulações das curvas de histerese da magnetorresistência não foram muito bons, indicando que melhorias devem ser introduzidas no modelo utilizado para a simulação da histerese da magnetorresistência, obtidos a partir dos ângulos das camadas ferromagnéticas livre e presa. A questão referente a presença em algumas das amostras de um desalinhamento entre os eixos fácéis do FM e do AFM ainda é uma questão em aberta, mas neste trabalho foi encontrado que este ângulo é igual a 2. / Spin Valves have been employed as magnetic sensors and used in random access memories, showing they are very important in terms of technological point of view. In this work, analyses of the magnetoresistance first order reversal curves (MR-FORC) have been used, as well as fittings of the magnetization and magnetoresistance hysteresis, to study the exchange-bias phenomena, magnetic anisotropies and magnetoresistance in spin valves. Sputtering has been used to the deposition of NiFe/Cu/NiFe/IrMn, and Ta has been deposited as seed and buffer layers. A domain wall model (in the antiferromagnetic layer) taking into account the magnetic anisotropies and the interactions between the layers has been employed to fit the magnetization hysteresis. Some textures have been also introduced to take into account the ferromagnetic (FM) and antiferromagnetic (AFM) grains dispersion (with Gaussian distributions) centered around the respective uniaxial anisotropy axes. However, to obtain good fits for some samples, it has been necessary to include an in-plane rotation of an angle of the both FM and AFM easy axes in relation to the field direction applied during the growing of the films. Good fits of the magnetization hysteresis have been obtained for all measured directions of the applied field. A new method based on the angular variation of the magnetoresistance to constant fields has been proposed to extract directly these angles. Reasonable agreements have been obtained between these angles and the corresponding ones extracted from the fits of the magnetization loops. Through the analyses of the MR-FORC and from the simulations indicated by the parameters (obtained from the fittings of magnetization loops), a direct relation between the interaction fields (and its uncertainties) and the exchange-bias fields of the grains of the distribution (extracted from the simulations, using the width of the distribution obtained from the magnetization fittings) has been identified. In summary, this analysis has showed that this technique allows to extract comparative information about the dispersion of the anisotropy axes of the FM and AFM grains around the uniaxial axis, which can be very import to the characterization of spin-valve based sensors. Besides, MR-FORC analyses have also indicated the presence of a threshold of discontinuity of the pinned NiFe layer at 27, showing a huge increase (above of the expected) to the sample at 25, and this unexpected increasing has corroborated with our hypothese. Simulations of the magnetoresistance loops have not been good, indicating that improvements should be included in the model employed to simulate these curves, obtained from the pinned and free angles of the NiFe layers. Concerning the case of the presence of misalignments of FM and AFM for some samples, it is still an open question, but in this work, we have found that this angle () is equal to 2.

The effect of doping on the crystal structure, magnetic, magnetocaloric and transport properties of MnM′Ge (M′ = Ni, Co) intermetallic compounds and NiMnX (X = Sn, In) Heusler alloys have been studied by room temperature X-ray diffraction (XRD), differential scanning calorimetry (DSC), and magnetization measurements. The studied magnetic systems include Ni1-xCrxMnGe1.05 (0 ≤ x ≤ 0.120), Mn1-xAlxCoGe (0 ≤ x ≤ 0.05), MnCo1-xZrxGe (0.01 ≤ x ≤ 0.04), Mn1-xAgxCoGe (0.01 ≤ x ≤ 0.10), Ni50-xRxMn35Sn15 (x = 0, 1 and R = La, Pr, Sm), Ni43-xRxMn46Sn11 (x = 0, 1 and R = Pr, Gd, Ho, Er), and Ni50Mn35In15-xBix (0 ≤ x ≤ 1.5).A temperature induced first-order structural transition characterized by a change in crystal structure from high temperature austenite phase (AP) with Ni2In-type Hexagonal structure to low temperature martensite phase (MP) with TiNiSi-type orthorhombic structure was observed at T = TM (martensitic transition temperature) in some of the MnM′Ge-based compounds. The partial substitution of doping elements such as Cr, Al, Zr, and Ag resulted in a decrease in TM and at certain concentration, TM was found to decrease below / coincide with the ferromagnetic transition temperature (TC) of AP. Therefore, such system show a first-order magnetostructural transition (MST).In Ni1-xCrxMnGe1.05, a MST from antiferromagnetic (AFM) orthorhombic to ferromagnetic (FM) hexagonal phase was observed for 0.105 ≤ x ≤ 0.120. Both direct and inverse MCE were observed in this compound. The peak values of the magnetic entropy change (ΔSMpeak ) in the vicinity of TC for ΔH = 5T were found to be 4.5 J/kg K, 5.6 J/Kg K, and 5.1 J/Kg K for x = 0.105, 0.115, and 0.120 respectively. A magnetic field-induced transition from an AFM to a FM state in the martensite structure was observed in annealed Ni0.895Cr0.105MnGe1.05 melt-spun ribbons, which led to a coupled MST from a FM martensite to a PM austenite phase with a large change in magnetization. As a result of the field-induced MST, a large ΔSMpeak value of 16.1 J kg-1 K-1 (which is about a four times larger than the bulk) and Refrigeration capacity (RC-1) =144 J kg-1 at μ0∆H = 5 T was found. It was also found that the ribbon samples showed excellent magnetic reversibility that is important for application. MCE parameters, adiabatic temperature change (∆Tad) and |〖∆S〗_M |, with maximum value of ~ 2.6 K (µoH = 10 T) and 4.4 J kg-1 K-1(µo∆H = 5 T), respectively, were observed in the vicinity of TC. The ∆Tad (T) curves obtained for µoΔH = 10 T and magnetization isotherms were found to be completely reversible, which indicates the reversibility of the MCE in this system. A large temperature span (of about 61 K) and a non-saturating behavior of ∆Tad were observed at magnetic fields up to 10 T. The adiabatic temperature change was found to be a linear function of (µoH)2/3 near TC in accordance with Landau’s theory of phase transitions.In MnCoGe compounds doped with Al, Zr, and Ag, a tunable MST from the paramagnetic hexagonal to ferromagnetic orthorhombic phase was observed. The maximum ΔSM values of about 18, 7.2, and 22 J kg-1 K-1for ∆H = 5T at TM was observed for Al, Zr, and Ag doped compounds, respectively. The corresponding maximum value of RC was found to be (303, 266, and 308) JKg-1.The new compounds containing low concentration of rare earth (R) metals: Ni50-xRxMn35Sn15, Ni43-xRxMn46Sn11, with R = La, Pr, Sm, Gd, Ho, Er and Ni50Mn35In15-xBix were synthesized. The compounds crystallized in the cubic L21 austenite phase (AP) or a mixture of AP and low temperature martensitic phase (MP) at room temperature. For Ni50-xRxMn35Sn15 and Ni43-xRxMn46Sn11 alloys, TM shifted towards higher temperature with rare-earth doping, thus stabilizing the MP at higher temperature. A maximum shift in TM by ~ 60-62 K relative to the parent compound (TM = 190-195 K) was observed for the Ni49LaMn35Sn15 and Ni42PrMn46Sn11. TM shifted towards lower temperature if Bi is placed in In position in Ni50Mn35In15-xBix. A maximum shift of ~ 36 K was detected for x = 1.5. Abnormal shifts in TC and TM to higher temperatures were observed at high field for Bi concentration ≥ 0.5.The ground state magnetization decreased with the rare-earth doping and increasing Bi content. The compounds exhibit both inverse and normal magnetocaloric effects. Large values of ∆SM = 12 (Ni49PrMn35Sn15), 32 Jkg-1K-1(Ni42PrMn46Sn11), 28 Jkg-1K-1 (Ni42GdMn46Sn11), 25 Jkg-1K-1 (Ni42HoMn46Sn11), 40 J/kg K (Ni50Mn35In15) and 34 J/kg K (Ni50Mn35In15-xBix, x = 0.25) were found at TM for ∆H = 5T that can be tuned in a wide temperature range. RC values ranging from 267-336 Jkg-1 at TC, 182 -250 Jkg-1 at TM and 144-165 Jkg-1 at TC were found with ∆H = 5T for Ni50-xRxMn35Sn15, Ni43-xRxMn46Sn11, and Ni50Mn35In15-xBix, respectively. Significant magnetoresistance (MR) values of -30%, -20 % and -30% were observed in Ni49LaMn35Sn15, Ni42GdMn46Sn11, and Ni50Mn35In14.5Bi0.5 compounds, respectively, at TM and ∆H = 5T. A large exchange bias effect with HEB ~ 1.1 kOe at 10 K was observed for the Ni42PrMn46Sn11 compound in its MP. Thus, the pronounced multifunctional properties such as shape memory effects, MCE, EB, and MR make these new systems promising for the ongoing development of magnetocaloric and multifunctional technologies.

Magnetic vortices in ferromagnetic disks are curling magnetization structures characterized by the sense of the spin circulation in the plane of the disk and by the direction of the magnetization in the vortex core. Concepts of memory devices using the magnetic vortices as multibit memory cells have been presented, which brought the high demand for their research in many physical aspects. This work investigates the magnetostatic coupling in pairs of ferromagnetic disks to clarify the influence of nearby disks or other magnetic structures to the vortex nucleation mechanism. To ensure that the vortex nucleation is influenced only by the neighbouring magnetic structures, the randomness of the nucleation process was studied in single disks prior to the work on pairs of disks. We had to ensure that the vortex nucleation is influenced only by the neighbouring magnetic structures and not by an unwanted geometrical asymmetry in the studied disk. Lithographic capabilities were inspected in order to achieve the best possible geometry. Further we present a concept of electrical readout of the spin circulation using the anisotropic magnetoresistance, which allows automated measurements to provide sufficient statistics. To explain the magnetoresistance behaviour, numerical calculations together with magnetic force microscopy measurements are presented.

La magnétorésistance anisotrope (AMR) des matériaux ferromagnétiques est largement utilisée comme le phénomène de base pour la mesure ou la détection de champ magnétique. En raison de la relation entre la configuration en domaines magnétiques et la résistivité macroscopique, l'application d'un champ magnétique externe modifie la résistivité des matériaux ferromagnétiques. Bien que cet effet soit largement utilisé dans des applications industrielles, certains aspects fondamentaux du comportement AMR sont encore assez mal compris. Par exemple, le rôle de la texture cristallographique dans le comportement effectif n'est pas décrit avec précision par les outils classiques de modélisation. En raison de ce lien direct entre la microstructure en domaines et l'effet AMR, les modèles de description de l'effet AMR reposent généralement sur des calculs micromagnétiques. Pour ces calculs, le nombre de degrés de liberté et d'interactions peuvent se multiplier rapidement si on recherche à décrire un comportement macroscopique (cas des polycristaux par exemple).La thèse porte sur la modélisation numérique de l'effet de magnétorésistance anisotrope des matériaux ferromagnétiques. Ce nouvel outil de modélisation 3D peut remédier à cet inconvénient majeur des approches micromagnétiques. Un modèle permettant de décrire les effets de couplage magnéto-élastique en utilisant une approche micro-macro est disponible au laboratoire GeePs. Sur la base des mêmes principes de la modélisation micro-macro, un outil de simulation de l'effet AMR en fonction de la contrainte mécanique et de la texture cristallographique des matériaux a été développé.La stratégie de modélisation est la suivante:Trois échelles de description du comportement sont introduites: le Volume Elémentaire Représentatif (VER) polycristallin (échelle macro), le monocristal ou grain, et enfin le domaine magnétique (échelle micro).Une première étape dite de localisation permet de déterminer le chargement magnéto-mécanique (champ magnétique et contrainte mécanique) à l'échelle d'un grain en fonction du chargement extérieur appliqué. L'introduction de variables internes et des lois d'évolution correspondantes permet de décrire de façon statistique l'évolution de la microstructure en domaines magnétiques sous l'influence de ce chargement local. Toujours à cette échelle, l'utilisation du modèle phénoménologique de Doring permet, pour chaque domaine, de calculer la résistivité en fonction de l'orientation relative entre aimantation locale et courant électrique. Une fois cette résistivité locale connue, une étape dite d'homogénéisation s'appuyant sur le modèle de Bruggeman permet de déterminer la résistivité macroscopique du VER polycristallin. Il est ainsi possible de prédire la variation de la résistivité entre un état initial désaimanté et un état sous chargement magnéto-mécanique quelconque.Les résultats obtenus par cette démarche ont été comparés avec succès à des résultats expérimentaux extraits de la littérature portant sur des polycristaux de Nickel, de Fer pur ou encore de Permalloy.Ensuite des simulations reproduisant les conditions de fonctionnement des capteurs AMR ont été effectuées. Ces simulations permettent de conclure qu'il est possible d'améliorer la sensibilité des capteurs AMR en générant une contrainte résiduelle biaxiale. / The anisotropic magnetoresistance (AMR) of ferromagnetic materials is widely used as the basic phenomenon for measuring or detecting magnetic field. Owing to the relationship between magnetic domain configuration and macroscopic resistivity, the application of an external magnetic field changes the resistivity of ferromagnetic materials. Although this effect is widely used in industrial applications, some basic aspects of AMR behavior are still unsufficiently understood. For example, the role of crystallographic texture is not accurately described by conventional modeling tools. As a consequence of the direct relationship between microstructure and AMR, models for AMR effect are generally based on micromagnetic calculations. For these calculations, the number of degrees of freedom and interactions can grow exponentially when investigating macroscopic behavior (case of polycrystals for example).The thesis deals with the numerical modeling of AMR effect in ferromagnetic materials. This new 3D modeling tool can overcome this major drawback of micromagnetic approaches. A model to describe the effects of magneto-elastic coupling using a micro-macro approach is available at the laboratory GeePs. Based on the same principles of micro-macro modeling, an AMR effect simulation tool has been developed including the effect of mechanical stress and the role of crystallographic texture of materials.The modeling strategy is as follows:Three scales of description of the behavior are introduced: the Representative Volume Element (RVE) of polycrystals (macro scale), the single crystal or grain, and finally the magnetic domain (micro scale).A first step, named localization, determines the magneto-mechanical loading (magnetic field and mechanical stress) within a grain depending on the external applied load. The introduction of internal variables and corresponding evolution laws allow describing in a statistical way the evolution of the magnetic domain microstructure under the influence of the local load. Also at this scale, the use of the phenomenological Doring model allows for each area, to calculate the resistivity as a function of the relative orientation between local magnetization and electric current. Once this local resistivity is known, a so-called homogenization step based on the Bruggeman model is used to determine the macroscopic resistivity of the RVE. It is thus possible to predict the variation in resistivity between an initial demagnetized state and a state under any magneto-mechanical loading.The results obtained by this approach were successfully compared to experimental results from literature on polycrystalline nickel, pure iron or Permalloy.Then simulations reproducing AMR sensors operating conditions were carried out. These simulations lead to the conclusion that it is possible to improve the sensitivity of AMR sensors by introducing an appropriate biaxial residual stress.

Die drei-dimensionalen Topologische Isolatoren Bi2Se3 and Bi2Te3 sind Modell-Systeme einer neuen Klasse von Isolatoren mit metallischen Oberflächenzuständen. Ihre kleinen Bandlücken und die schweren Elemente sind essentiell für die topologisch nicht-triviale Bandstruktur, sind aber ebenso verantwortlich für andere bemerkenswerte Eigenschaften, wie etwa für ihre Leistungsfähigkeit als Thermoelektrika. Diese Arbeit untersucht die elektronischen Eigenschaften der Topologischen Isolatoren Bi2Se3 und Bi2Te3 mittels zahlreicher experimenteller Methoden. Es wird gezeigt, dass Ferromagnetismus in Mn gedoptem Bi2Te3 durch sintern unterdrückt werden kann. Zudem werden ein überraschend großer Magnetoresistiver Effekt und ein ladungsträgerunabhängiger Vorzeichenwechsel des Seebeck-Koeffizienten mit zunehmenden Mn Gehalt diskutiert. Kernmagnetische Resonanz (NMR) von 125Te Kernen in Bi2Te3 Einkristallen lässt auf eine ungewöhnliche elektronische SpinSuszeptibilität and komplexe NMR Verschiebungen schließen. Es wird gezeigt dass die Quadrupolwechselwirkung von 209Bi Kernen in Bi2Se3 Einkristallen eine Signatur der Bandinversion ist, in quantitativer Ubereinstimmung mit DFT Rechnungen. Weiterhin wird argumentiert dass die starke Spin-Bahn Kopplung der Leitungselektronen zu einer nicht-trivialen Orientierungsabh¨angigkeit der 209Bi Quadrupolaufspaltung führt.:Contents List of Figures List of Tables List of abbreviations Introduction 1 Topological insulators in three dimensions 2 Theoretical background 3 Methods I: structural, electronic and magnetic properties 4 Methods II: nuclear magnetic resonance 5 Sample preparation and basic characterisation6 Magnetic and electronic properties of Mn doped Bi2Te3 7 NMR of spin 1/2 nuclei: 125Te in Bi2Te3 8 NMR of quadrupole nuclei: 209Bi in Bi2Se3 Conclusions and outlook Appendix Bibliography / The three-dimensional topological insulators Bi2Se3 and Bi2Te3 are model systems of a new class of materials with an insulating bulk and gapless surface states. Their small band gaps and the heavy elements are essential for the topologically non-trivial band structure, but these features are similarly responsible for other remarkable properties, such as their high thermoelectric performance. This thesis investigates the electronic properties of the topological insulators Bi2Se3 and Bi2Te3 with a broad range of experimental methods. Ferromagnetism in Mn doped Bi2Te3 is shown to disappear under sample sintering. A surprisingly large magnetoresistance and a charge carrier independent change in the sign of the thermopower with increasing Mn content are discussed.125Te nuclear magnetic resonance (NMR) of Bi2Te3 single crystals suggest an unusual electronic spin susceptibility and complex NMR shifts. The quadrupole interaction of 209Bi nuclei in Bi2Se3 single crystals is shown to be a signature of the band inversion in quantitative agreement with first-principle calculations. Furthermore, it is proposed that the strong spin-orbit coupling of conduction electrons causes a non-trivial orientation dependent quadrupole splitting of the 209Bi resonance.:Contents List of Figures List of Tables List of abbreviations Introduction 1 Topological insulators in three dimensions 2 Theoretical background 3 Methods I: structural, electronic and magnetic properties 4 Methods II: nuclear magnetic resonance 5 Sample preparation and basic characterisation6 Magnetic and electronic properties of Mn doped Bi2Te3 7 NMR of spin 1/2 nuclei: 125Te in Bi2Te3 8 NMR of quadrupole nuclei: 209Bi in Bi2Se3 Conclusions and outlook Appendix Bibliography

The main objective of this thesis was to bring the first experimental evidence about the spin-Hall magnetoresistance (SMR) in the Terahertz (THz) spectral range. The time-domain THz spectroscopy (TDTS) was chosen as the main method, and we presented a new experimental scheme, which allows us to observe SMR or magnetoresistive effects with similar symmetry at a wide range of THz frequencies very efficiently. We focused on the study of SMR in the bilayers consisting of either a prototypical ferrimagnetic isolator or of heavy metal (FI/HM) and metallic stacks of ferromagnetic CoFeB and heavy metal Pt layer (FM/HM). While SMR shows a rapid decrease already at the lowest THz frequencies (< 1 THz) in the FI/HM structures, the SMR in FM/HM bilayers persists above 30 THz. These observations are then explained by a different mechanism of SMR. The second part of the thesis is devoted to the construction of the new TDTS setup and an easy-to-use model of the THz setup using the Gaussian description of THz radiation. The simulated results have been compared to corresponding experimental measurements using a spintronic THz emitter (STE). The last part of the thesis describes the emission of intensive THz pulses from large-area STE.

Thesis advisor: Fazel Tafti / Since the idea of topology was realized in real materials, the hunt is on for new candidates of topological semimetals with novel electromagnetic responses. For example, topological states can be highly conductive due to a topological protection, which can be destroyed in a magnetic field and lead to an extremely high magnetoresistance. In Weyl semimetals, a transverse current that would usually require a magnetic field to emerge, can be generated by intrinsic Berry curvature without a magnetic field -- the celebrated anomalous Hall effect. In this dissertation, both phenomena mentioned above are studied in rare-earth monopnictides and RAlX material family (R=rare-earths, X=Ge/Si), respectively. The monopnictides are ideal for the study of extreme magnetoresistance because of their topological transitions and abundant magnetic phases. In LaAs, we untied the connection between topological states and the extreme magnetoresistance, the origin of which is clarified. In HoBi, we found an unusual onset of extreme magnetoresistance controlled by a magnetic phase dome. On the other hand, RAlX material family is a new class of Weyl semimetals breaking both inversion and time-reversal symmetries. In particular, in PrAlGeₓSi₁₋ₓ (x=0-1), we unveiled the first transition from intrinsic to extrinsic anomalous Hall effect in ferromagnetic Weyl semimetals, and the role of topology is discussed. In CeAlSi, we found that the Fermi level can be tuned as close as 1 meV away from the Weyl nodes; moreover, a novel anomalous Hall response appears only when the Fermi level is tuned to be near the Weyl nodes. Thus, we established a new transport response solely induced by Weyl nodes. / Thesis (PhD) — Boston College, 2021. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.