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Pagrindiniai bėgių tipo elektromagnetinių svaidyklių technologijos uždaviniai yra susiję su daugybe fizikinių reikinių, vykstančių sviedinio kontaktų sąlyčio su bėgiais riboje. Todėl elektromagnetinių procesų, atsirandančių dėl didelių elektros srovės tankių ir slydimo greičių tyrimas yra svarbus šios srities uždavinys. Dėl magnetinės difuzijos ir greito sviedinio judėjimo, srovė koncentruojasi galinėje kontakto dalyje, kuri dėl stipraus Joule šilimo greitai susidėvi, o tai apriboja svaidyklės efektyvumą. Disertacijoje pateikiami magnetinio lauko difuzijos tyrimai bėgių tipo svaidyklėse panaudojant specialius jutiklius magnetinių laukų matavimui. Šie nauji jutikliai, pagaminti iš plonų La0,83Sr0,17MnO3 sluoksnių, pasižyminčių milžiniškos magnetovaržos (MM) reiškiniu (MM-B-skaliariniai jutikliai), buvo pritaikyti svaidyklėse, veikiančiose statiniame ir dinaminiame režime, esant dideliems elektromagnetinių triukšmų lygiams ir mechaniniams įtempiams. Darbo metu buvo nustatyta, jog šiais jutikliais galima išmatuoti stipraus magnetinio lauko impulso amplitudę, kai nėra žinoma šių laukų kryptis. Buvo ištirti nevienalyčių magnetinių laukų pasiskirstymai bėgiuose, atsirandantys dėl artumo efekto bei greičio skinefekto, sviediniui judant greičiau nei 1500m/s. Bandymai su įtvirtintu daugelio šepetėlių konstrukcijos sviediniu parodė, kad priekiniai šepetėliai, dėl nepakankamo Lorenco jėgos sukuriamo slėgio, gali pararasti elektrinį kontaktą su bėgiais. / The development of rails and armatures which ensure a sliding solid-to-solid contact during the whole projectile acceleration is a great challenge in the field of railgun technology. Multifaceted physics exists at the sliding contact interface: The current concentrates at the rear of the interface due to magnetic diffusion processes and the fast armature movement. Consequently, Joule heating leads to enhanced wear in this region. In this dissertation, magnetic diffusion in railguns is investigated by means of measuring magnetic fields with CMR-B-scalar sensors at static and dynamic experimental conditions. These novel sensors, based on La0.83Sr0.17MnO3 thin films exhibiting colossal magnetoresistance were adapted for the use at railguns. It was found that these sensors are effective tools to measure the magnitude of high pulsed magnetic fields independent of the field orientation. Magnetic field distributions influenced by proximity and velocity skin effect could be measured in the harsh railgun environment. The obtained results allowed to estimate the skin depth in the rails at the sliding interface of a fast moving armature (>1500m/s). Furthermore experiments with fixed multiple brush armatures showed that front brushes can have contact problems in case of missing contact pressure.

Au cours de ces travaux de thèse, nous avons étudié par microscopie magnétique à émission d’électrons balistiques (BEMM) les propriétés de magnétotransport d’électrons chauds de la vanne de spin Fe/Au/Fe épitaxiée sur GaAs(001). Dans ces expériences, la pointe d’un microscope à effet tunnel (STM) injecte localement un courant d’électrons chauds à la surface de la vanne de spin. La mesure sous champ magnétique du courant d’électrons balistiques collecté à l’arrière de l’échantillon donne accès aux propriétés locales de magnétoconductance de l’échantillon. Nous avons dans un premier temps étudié les propriétés de magnétotransport de vannes de spin planaires. Les mesures BEMM démontrent un magnétocourant d’électrons chauds pouvant atteindre 500 % à température ambiante. Ces forts effets de magnétoconductance ne sont que très faiblement dépendants des épaisseurs des électrodes de fer et ne peuvent donc être dus à l’asymétrie en spin de la longueur d’atténuation des électrons chauds dans les couches de fer. Dans cette structure épitaxiée, la polarisation en spin du faisceau d’électrons chauds s’acquiert principalement aux interfaces via des effets de structure électronique. L’électron traversant les couches minces métalliques se propage comme un état de Bloch. Sa transmission aux différentes interfaces se fait en conservant d’une part la composante transverse k║ du vecteur d’onde électronique, et d’autre part, la symétrie de la fonction d’onde. Au-dessus de la barrière Schottky, les électrons chauds sont collectés dans la vallée Г du GaAs se projetant à l’interface dans la direction k║=0. Dans cette direction k║=0, la conservation de la symétrie de la fonction d’onde à l’interface Fe/Au conduit au filtrage des états de Bloch de symétrie Δ1 du fer. Ces états de symétrie Δ1, totalement polarisés en spin, sont responsables des forts magnétocourants d’électrons chauds observés. Cette analyse est confirmée expérimentalement par l’observation d’une corrélation entre amplitude du magnétocourant et masse effective du substrat semiconducteur. En augmentant la masse effective du semiconducteur, on ouvre le collimateur filtrant le courant d’électrons chauds autour de la direction k║=0, et le magnétocourant diminue sans modifier la vanne de spin. Dans un second temps, tirant partie de la résolution latérale du microscope et de sa sensibilité au magnétisme, des microstructures de fer préparées sous ultra-vide par évaporation à travers un masque (méthode du nanostencil) ont été étudiées. Dans ces structures, la modulation du courant collecté par la structure locale en domaines magnétiques a permis la réalisation d’images magnétiques avec une haute résolution spatiale. Les contrastes observés sur ces microstructures sont en excellent accord avec les images BEMM calculées à partir de simulations micromagnétiques ouvrant la voie à une microscopie magnétique quantitative à forte sensibilité et résolution latérale nanométrique. / During this thesis work, we studied by ballistic electron magnetic microscopy (BEMM) the hot electron magnetotransport properties of epitaxial Fe/Au/Fe/GaAs(001) heterostructures. In these experiments, hot electrons are injected from an STM tip through the metallic base. The measurement of the ballistic electron current collected at the back of the substrate under magnetic field gives access to the local magnetoconductance properties of the sample. The first part of this work consists in the study of a planar heterostructures. BEMM measurements on epitaxial Fe/Au/Fe/GaAs(001) samples demonstrate hot electron magnetocurrent as high as 500% at room temperature. This high magnetocurrent value is observed to be almost independent of the Fe layers thickness, and thus can not be explained by the spin asymmetry of the electron attenuation length in the iron layers. In this epitaxial heterostructure, the hot electron beam is mainly spin-polarized at the interfaces due to band structure effects. In the metallic thin films, electrons propagate as Bloch states. The electron wave function transmission at the interfaces should satisfy two selection rules: the transverse momentum (k║) of the electron wave vector and the symmetry of the electron wave function should be conserved. Above the Schottky barrier height, hot-electrons are collected in the Г valley of GaAs selecting thus only electrons with a transverse momentum (k║) close to zero. Among these k|| ≈ 0 states, conservation of the electron wave-function symmetry at the Fe/Au epitaxial interfaces additionally selects electrons with the Δ1 symmetry. These Δ1 states are fully spin-polarized and are responsible for the observed high magnetocurrent in these heterostructures. This analysis is experimentally confirmed by the observation of a correlation between the magnetocurrent value and the semiconductor effective mass. By increasing the semiconductor effective mass, we open the collimator which filters the electronic states around k║=0 and the magnetocurrent value decreases. To take advantage of the lateral resolution of the microscope and of its high sensitivity to magnetism, the second part of this work was devoted to the study of sub-micrometric iron structures prepared under UHV by evaporation through a nanostencil. In these structures, the modulation of the collected current by the local magnetic domain structure in the Fe dots allows magnetic imaging with a high spatial resolution. The experimental magnetocontrasts observed on these sub-micrometric Fe dots are in excellent agreement with BEMM current maps calculated from micromagnetic simulation results. This opens the way to a quantitative magnetic microscopy with high contrast and nanometric lateral resolution.

Este trabalho apresenta o estudo do comportamento da mobilidade de portadores em transistores SOI nMOS e pMOS avançados planares e de porta tripla através de simulações tridimensionais e resultados experimentais. Devido à sua estrutura física, os transistores de porta tripla apresentam duas mobilidades, uma referente ao canal de condução na porta superior (orientação cristalográfica ) e uma referente ao canal de condução das portas laterais (orientação cristalográfica ). Inicialmente foi feito um estudo comparativo dos métodos de extração da mobilidade através de simulações numéricas tridimensionais dos dispositivos de porta tripla, tendo como objetivo analisar o comportamento dos diferentes métodos de extração da mobilidade efetiva de portadores e separação das mobilidades da porta superior e laterais, para fazer a escolha dos métodos mais adequados para aplicação nos resultados experimentais. De modo geral todos os métodos estudados sofrem maior influência com a redução do comprimento de canal devido aos efeitos da resistência série e de canal curto. Dentre os métodos estudados o que apresenta maior influência com a redução do comprimento de canal é o por gm,máx que apresentou maiores erros. E o método por Y-function apresentou o melhor comportamento com a redução do comprimento de canal, seguido pelo método Split C-V. Para os dispositivos com comprimento de canal acima de 0,5micro metros o maior erro encontrado foi de 13% para os métodos McLarty e Y-function. Neste caso os métodos por gm,máx e Split C-V apresentaram melhores resultados. Com relação à largura de canal os métodos por gm,máx e Split C-V tiveram os melhores resultados com a utilização de dispositivos de porta tripla. Foi observado que para dispositivos com Wfin maior que 0,7 micro metros os maiores erros encontrados foram de 11,2 % para o método Y-function e 10% para o método por gm,máx. No entanto, para dispositivos com Wfin menores que 0,7 micro metros os métodos Y-function e McLarty apresentaram os piores resultados chegando a quase 50% de erro para o dispositivo mais estreito (Wfin = 50nm). Quanto aos métodos de separação das mobilidades todos os métodos estudados apresentaram bons resultados e se mostraram eficientes mostrando um erro máximo de 11,3%. O que os diferencia é o grau de dificuldade de aplicação. Posteriormente foram realizadas medidas experimentais a fim de possibilitar o entendimento dos fenômenos físicos relacionados à mobilidade de portadores. Primeiramente foram analisados os dispositivos de porta tripla em temperatura ambiente e em baixa temperatura para dispositivos nMOS e pMOS. O estudo foi feito em dispositivos com diferentes comprimentos e larguras de canal a fim de analisar os efeitos das dimensões nesta tecnologia. Em seguida são apresentados os resultados para dispositivos SOI avançados planares em temperatura ambiente com variação da largura de canal e com aplicação de tensão no substrato, com objetivo de analisar o comportamento da mobilidade na primeira interface (óxido de porta/canal) e na segunda interface (óxido enterrado/canal). Esse estudo foi realizado com a aplicação de dois diferentes métodos de extração da mobilidade. Por fim foi feito um estudo de um novo método para extração da mobilidade de portadores chamado de magnetoresistência que consiste na aplicação de um campo magnético perpendicular ao fluxo de corrente do transistor. O uso do campo magnético altera a resistividade do canal, de onde é possível extrair a mobilidade. Foram apresentados os resultados com a utilização deste método para os dispositivos de porta tripla tipo nMOS com variação do comprimento de canal (90 a 910 nm) e da temperatura (200K a 77K). / This work presents a study of the carrier mobility behavior in planar and triple gate advanced SOI nMOS and pMOS transistors through three-dimensional simulations and experimental results. Due to its physical structure, the triple gate transistors presents two mobilities, one referring to the conduction channel on the top gate (crystallographic orientation ) and one referring to the conduction channel on the lateral gates (crystallographic orientation ). Initially, a comparative study of the mobility extraction methods through three-dimensional numerical simulations of the triple gate devices was made, with the purpose to analyze the behavior of different effective carrier mobility and separation of top and lateral gates mobilities extraction methods, to make the choice of the suitable methods for application in the experimental results. From a general way, all the studied methods suffer higher influence with channel length reduction due to short channel and the series resistance effects. Among the studied methods, the method by gm,max presents the higher influence with the channel length reduction that shows the bigger errors. The Y-function method presents the best behavior with the channel length reduction, followed by Split C-V method. For the devices with channel length above 0.5 mirco meters the highest error founded was 13% for McLarty and Y-function methods. In this case the gm,max and Split C-V methods presented the better results. With regard to the channel width the Split C-V and gm,max methods presented the better results with the use of triple gate devices. It was observed that for devices with Wfin higher than 0.7 mirco meters the highest errors founded were 11.2% for the Y-function method and 10% for gm,max method. Nevertheless, for devices with Wfin smaller than 0.7 micro meters the Yfunction and McLarty methods presented the worst results arriving almost 50% of error for the narrowest device (Wfin = 50nm). With regard to mobilities separation methods all the studied methods presented good results and had shown efficient showing a maximum error of 11.3%. The difference between them is the application difficulty level. After that, experimental measures were made in order to make possible the understanding of physical phenomena related to carrier mobility. Firstly, it was analyzed the triple gate devices at room and low temperatures for nMOS and pMOS devices. The study was done in devices with different channel lengths and widths in order to analyze the dimensions effects in this technology. After that it was present the results for planar advanced SOI devices at room temperature with variation of channel width and with the application of back gate voltage, with the purpose to analyze the behavior of the mobility in the first interface (gate oxide/channel) and second interface (buried oxide/channel). This study was done with the application of two different mobility extraction methods. Finally a study of a new mobility extraction method called magnetoresistance was made; this method consists in a perpendicular magnetic field application to transistor current flow. The uses of magnetic field change the channel resistivity, where it is possible to extract the mobility. It was presented results with the use of this method for triple gate nMOS devices with variation of channel length (90 a 910 nm) and temperature (200K to 77K).

Nos últimos anos, vem crescendo o interesse em investigar o fenômeno da magnetorresistência em diversos materiais (inorgânicos ou orgânicos), uma vez que esse fenômeno se encontra diretamente ligado à fabricação de discos rígidos com elevada capacidade de armazenamento de dados. Estudos anteriores mostraram que o polímero PDO14FV apresenta magnetorresistência de intensidade superior as apresentadas por materiais inorgânicos. Sendo assim, o presente trabalho pretendeu desenvolver a síntese e caracterização de dois oligômeros, o dímero (DO14FV-dim) e o trímero (DO14FV-trim), e investigar o fenômeno da magnetorresistência nesses materiais. Surpreendentemente, esses oligômeros apresentaram magnetorresistência superior àquela obtida com o polímero correspondente. Esses resultados poderão contribuir, em trabalhos futuros, na elucidação do mecanismo desse fenômeno em materiais orgânicos. A síntese dos oligômeros foi feita por reação de Wittig, obtendo-se moléculas de estrutura bem definida e com configuração trans, sendo caracterizadas por métodos espectroscópicos. Visando outras aplicações, os oligômeros e o polímero foram estudados em sensores de gases, na diferenciação entre tipos e marcas de chá. Foi observado que quanto maior é a molécula, maior é seletividade, e, portanto, o polímero foi quem apresentou os melhores resultados. / There is a growing interest in investigating the phenomenon of magnetoresistance in various materials (both organic and inorganic), since it is directly linked to the manufacture of high capacity hard disk drives. Previous studies showed that the polymer PDO14FV presents magnetoresistance with higher intensity than inorganic materials. Therefore, this work consisted in the synthesis and characterization of two oligomers, the dimer (DO14FV-dim) and trimer (DO14FV-trim), of this polymer and the investigation of magnetoresistance in these materials. Surprisingly, these oligomers presented higher magnetoresistance than that exhibited by the polymer. These results may contribute in future works aiming the elucidation of the mechanism of this phenomenon in organic materials. The synthesis of the oligomers was performed by Wittig reaction. Molecules of well defined structure and trans configuration were obtained and characterized by spectroscopic methods. Aiming other applications, the oligomers and polymer were tested in gas sensors, for the discrimination between different types and brands of tea. It was observed that the greater the molecule, the greater the selectivity, and therefore, the polymer gave the best results.

Observando o atual interesse em polímeros organometálicos para diversas aplicações, foi feita a síntese de uma série de polímeros conjugados contendo ferroceno na cadeia principal visando à investigação de suas propriedades, em especial fenômenos magnetorresistivos, magneto-ópticos e de óxido-redução. Os polímeros preparados pelo método de McMurry foram os seguintes: PFV: poli(1,1\'-ferrocenilenovinileno) e PFV-DOPPV-M: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno]. Outros dois polímeros foram preparados utilizando o método de polimerização de Wittig, o PFV-DOPPV-W: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno] e o PFV-DMPPV: poli[1,1\'-ferrocenileno-vinileno-alt-(2,5-dimetóxi)-1,4-fenilenovinileno]. A síntese de polímeros contendo segmentos π-conjugados equenos e bem definidos separados por segmentos não-conjugados é uma das melhores stratégias para a obtenção de polímeros emissores de luz azul. Com base nesse argumento foi feita a síntese de uma série de polímeros contendo um derivado metoxilado de bisfenol-A (BPA) na cadeia principal, alternando-se com unidades de PPV ou PFV que apresentam segmentos conjugados bem definidos. Os polímeros preparados foram os seguintes: BPA-DOPPV:poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-(di-n-octilóxi)-1,4-divinilbenzeno]; BPA-PPV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,4-ivinilbenzeno]; BPA-DMPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dimetóxi-1,4-ivinilbenzeno]; BPA-DBPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dibromo-1,4-divinilbenzeno] e BPA-PFV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,1\'-divinil-ferroceno]. Todos os polímeros obtidos foram caracterizados por métodos espectroscópicos (UV-VIS, IR, RMN), análises térmicas, SEC, entre outras. Algumas aplicações foram estudadas para esses polímeros, tais como a construção de um eletrodo de ORP modificado, a produção de diodos orgânicos emissores de luz (OLEDs) e a determinação da resposta \"olfativa\" de sensores de gases. / Owing to the current interest in organometallic polymers and their applications, a group of conducting polymers containing ferrocene in the main chain was synthesized aiming the study of their magnetoresistive, magneto-optic and redox properties. The following polymers were prepared via McMurry method: poly(1,1\'-ferrocenylenevinylene) (PFV) and poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-M). Two other polymers were synthesized via Wittig method: poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-W) and poly[1,1\'-ferrocenylene-vinylene-alt-(2,5-dimethoxy)-1,4-phenylenevinylene] (PFV-DMPPV). The synthesis of polymers with well-defined small π-conjugated segments separated by non-conjugated segments is one of the best strategies to obtain blue light emitting polymers. Based on this statement the synthesis of several polymers formed by methoxylated bisphenol-A (BPA) alternated with PPV or PFV units was performed. The prepared polymers were the following: poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-(di-n-octiloxy)-1,4-divinylbenzene] (BPA-DOPPV), poly [2,2-bis(4-methoxyphenyl)-propane-alt-1,4-divinylbenzene] (BPA-PPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dimethoxy-1,4-divinylbenzene] (BPA-DMPPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dibromo-1,4-divinylbenzene] (BPA-DBPPV) and poly[2,2-bis(4-methoxyphenyl)-propane-alt-1,1\'-divinylferrocene] (BPA-PFV). All the synthesized polymers were characterized by spectroscopic methods (UV/VIS, IR, NMR), thermal analysis, SEC, among others. Some applications to these polymers were studied: a modified ORP electrode, organic light emitting devices (OLEDs) and gas sensors.

Dans cette thèse, nous nous sommes attachés à mesurer la résistance induite par les parois magnétiques dans différents métaux ferromagnétiques (fer, cobalt, oxydes de manganèse, alliage de Fe0.5Pa0.5). Le premier circuit étudié consistait en un fil de 200 nanomètres de large et 50 nanomètres d'épaisseur, fabriqué par lithographie électronique. Par microscopie à force magnétique et microscopie de Lorentz nous avons observé que les domaines sont en position tête-bêche dans l'état vierge dans des fils de cobalt. La configuration magnétique a été suivie en fonction du champ appliqué. Par lithographie électronique, nous avons pu disposer sur le fil des contacts en or. Dans le cobalt, la résistance d'une paroi magnétique unique a été mesurée et sa valeur est supérieure aux prédictions théoriques. Dans le manganite, sur un circuit équivalent, nous avons pu mesurer la magnétorésistance de joints de grain. Nous avons aussi effectué la mesure de la résistance d'une paroi sur une couche à aimantation perpendiculaire (alliage de fer-palladium), dont les domaines étaient alignés. Nous avons mesuré la résistance perpendiculairement (MR=9%) et parallèlement (MR=2.8%) aux parois, et ainsi corroboré certains modèles. Nous avons, par ailleurs, étudié (expérimentalement et numériquement) des systèmes magnétiques dans lesquels l'anisotropie de forme joue un rôle prépondérant. Dans des plots triangulaires de taille variant entre 0.1 et 2 microns, la frustration géométrique stabilise des états de vortex. Dans des lignes de fer-palladium, nous avons montré que les dimensions des domaines étaient conservées lorsque la taille latérale du système était réduite jusqu'à 300 nanomètres En revanche, l'orientation des domaines devient anisotrope et les parois magnétiques s'orientent perpendiculairement à l'axe de la ligne. Ces études permettent de mieux comprendre les effets de l'anisotropie de forme.

<p>This thesis presents transverse magnetoresistance (MR) and Hall resistivity measurements of nickel thin films at temperatures between 280 and 455 K and pressures up to 6 GPa. An experimental system was developed for conducting precise magnetotransport measurements using the current reversal and van der Pauw techniques in combination with a 10 T superconducting magnet. Polycrystalline Ni_0.985O_0.015 thin film samples were manufactured with preexisting point contacts allowing highly reproducible magnetotransport measurements at pressure in the diamond anvil cell (DAC).</p><p>The magnetic resistivity above the technical saturation of the magnetization was found to decrease linearly to the highest applied fields, 10 T, while the field derivative, 0.010-0.018 µΩ cm T^-1 between 280 and 316 K, increased with temperature and decreased with pressure. The decrease in the magnetoresistance is attributed to spin wave damping of electron-magnon scattering processes at high fields. The magnon mass, 535(14) meV Ų at 0 K and 0 GPa, determined from longitudinal magnetic resistivity theory is a slightly increasing function of pressure. Correlation between the zero field resistivity and the extraordinary Hall coefficient (EHC) confirmed side jump scattering as the dominant diffusion mechanism at 0 GPa, however, skew scattering was found to become increasingly important with pressure.</p><p>The effect of oxygen and pressure on the density of states (DOS) at the Fermi level was investigated through total energy band structure calculations using a periodic supercell of 64 atoms to simulate the sample chemistry. The DOS of Ni_0.985O_0.015 at the Fermi level was found to increase by 27% at 10 GPa relative to 0 GPa. However, when compared to the results for pure Ni, decreases of 60% and 23% occurred for the corresponding calculations at 0 and 10 GPa. The relative differences in the magnetic resistivity are attributed to competing effects between the DOS, average magnetic moment and magnon mass.</p><p>The technique developed for conducting magnetotransport measurements at pressure is applicable to the study of electronic diffusion in ferromagnets as well as geophysical problems such as the geodynamo.</p>