[pt] Amperímetros convencionais devem ser inseridos em série com o elemento no qual se deseja medir a corrente, constituindo uma forma de medição invasiva. Amperímetros alicate, baseados em bobinas, realizam medições de forma não invasiva, mas são limitados a correntes alternadas. Para medição de correntes contínuas, amperímetros baseados no efeito Hall são utilizados, mas possuem baixo nível de tensões de saída e pouca estabilidade em relação à temperatura. O objetivo desta dissertação foi desenvolver um protótipo de amperímetro baseado em magnetômetros de magnetorresistência gigante (GMR) capaz de medir correntes contínuas, de forma não invasiva e com alta resolução em relação aos amperímetros alicate. A metodologia dividiu-se em: (i) utilização de dois magnetômetros GMR para medir o campo magnético gerado pela corrente elétrica em um condutor; (ii) projeto e implementação de um solenoide para polarizar os sensores na faixa de operação linear; (iii) aprimoramento e desenvolvimento de circuitos eletrônicos dedicados à excitação e leitura dos GMRs; (iv) implementação de algoritmos para solução do problema inverso, isto é, a partir da saída do circuito, em mV, estimar a corrente que passa pelo condutor e a distância entre este e o amperímetro. Foram realizados 60 testes, com correntes variando de -3 A a 3 A, com passos de 0,1 A. O protótipo foi capaz de estimar a corrente elétrica com incerteza expandida, do tipo A, de 0,091 A e 0,07 cm para a distância. Os resultados comprovam a viabilidade da realização de medições de corrente, por aproximação, utilizando sensores GMR. / [en] Conventional ammeters should be inserted in series with the element in which the current is to be measured, thus constituting an invasive measurement form. Clamp ammeters, based on coils, are able to measure non-invasively but are limited to alternating currents. For measurement of direct currents, Hall-based ammeters are used, but have low output voltages and little temperature stability. Thus, the objective of this dissertation was to develop a prototype based on giant magnetoresistance (GMR) magnetometers capable of measuring direct currents, non-invasively and with high resolution in relation to clamp ammeters. The methodology was divided into: (i) the use of two GMR magnetometers to measure the magnetic field generated by the electric current in a conductor; (ii) design and implementation of a solenoid to polarize the sensors in the linear operating range; (iii) improvement and development of electronic circuits dedicated to the excitation and reading the GMRs; (iv) implementation of algorithms to solve the inverse problem, that is, from the outputs of the circuit, in mV, estimate the current passing through the conductor and the distance between it and the ammeter. Sixty tests were performed, with currents varying from -3 A to 3 A, with steps of 0.1 A. The prototype was able to estimate the electrical current with type A expanded uncertainty of 0.091 A and 0.07 cm for the distance. The results demonstrate the feasibility of conducting current measurements by approximation using GMR sensors.

O objetivo sintético do presente trabalho é a síntese, caracterização e aplicação do polímero conjugado inédito de baixa Egap, poli(9,9-n-dioctil-2,7-fluorenilenovinilenoalt- 4,7-dibenzotiadiazol-2,5-tiofeno) (PF-BTB). A rota sintética proposta envolve 10 passos, dentre os quais destacam-se reações como a de Wittig e acoplamentos de paládio (Stille e Heck). A caracterização da molécula envolveu as técnicas de RMN de 1H, espectroscopias de infravermelho, UV-VIS e fluorescência, voltametria cíclica, análises térmicas (TGA e DSC) e cromatografia por permeação em gel. A primeira aplicação do polímero se deu na construção de um nariz eletrônico capaz de identificar com ótima precisão três variedades de tabaco (Burley, Flue Cured e Oriental), além de oito diferentes marcas comerciais de cigarro. Esses estudos, além da aplicação prática, serviram para mostrar a eficiência de um tipo novo de sensor para narizes eletrônicos, composto por um mesmo polímero condutor dopado com diferentes porfirinas, denominado sensor híbrido. Por fim, filmes finos do polímero PF-BTB, depositados sobre eletrodos de ouro, tiveram suas propriedades magnetorresistivas testadas em diferentes condições, apresentando valores maiores que 40%, o que é considerado muito alto para esse tipo de fenômeno em filmes poliméricos. / The aim of this work is the synthesis, characterization and application of a novel low Egap conjugated polymer, poly(9,9-n-octyl-2,7-fluorenevinylene-alt-4,7- benzothiadiazole-2,5-thiophene) (PF-BTB). The synthetic pathway comprises 10 steps, involving reaction such as Wittig\'s and palladium cross-couplings (Heck\'s and Stille\'s). The molecule was characterized by the following techniques: 1H NMR, spectroscopic analyses (FTIR, UV-VIS and fluorescence spectroscopy), cyclic voltammetry, thermal analyses (TGA and DSC) and gel permeation chromatography. The polymer was first used to build an electronic nose, which successfully identified three tobacco types (Burley, Flue Cured and Oriental) with high accuracy. The same system could also identify eight different cigarette brands. Besides this practical application, the experiments were designed to show the power of a new sensor type, composed by a single conductive polymer doped with different porphyrins, a composite sensor. Finally, thin films of PF-BTB deposited onto gold electrodes had their magnetoresistive properties tested under different conditions. The material showed magnetoresistance values higher than 40%, which is considered outstanding for this kind of polymeric films.

Nos últimos anos, vem crescendo o interesse em investigar o fenômeno da magnetorresistência em diversos materiais (inorgânicos ou orgânicos), uma vez que esse fenômeno se encontra diretamente ligado à fabricação de discos rígidos com elevada capacidade de armazenamento de dados. Estudos anteriores mostraram que o polímero PDO14FV apresenta magnetorresistência de intensidade superior as apresentadas por materiais inorgânicos. Sendo assim, o presente trabalho pretendeu desenvolver a síntese e caracterização de dois oligômeros, o dímero (DO14FV-dim) e o trímero (DO14FV-trim), e investigar o fenômeno da magnetorresistência nesses materiais. Surpreendentemente, esses oligômeros apresentaram magnetorresistência superior àquela obtida com o polímero correspondente. Esses resultados poderão contribuir, em trabalhos futuros, na elucidação do mecanismo desse fenômeno em materiais orgânicos. A síntese dos oligômeros foi feita por reação de Wittig, obtendo-se moléculas de estrutura bem definida e com configuração trans, sendo caracterizadas por métodos espectroscópicos. Visando outras aplicações, os oligômeros e o polímero foram estudados em sensores de gases, na diferenciação entre tipos e marcas de chá. Foi observado que quanto maior é a molécula, maior é seletividade, e, portanto, o polímero foi quem apresentou os melhores resultados. / There is a growing interest in investigating the phenomenon of magnetoresistance in various materials (both organic and inorganic), since it is directly linked to the manufacture of high capacity hard disk drives. Previous studies showed that the polymer PDO14FV presents magnetoresistance with higher intensity than inorganic materials. Therefore, this work consisted in the synthesis and characterization of two oligomers, the dimer (DO14FV-dim) and trimer (DO14FV-trim), of this polymer and the investigation of magnetoresistance in these materials. Surprisingly, these oligomers presented higher magnetoresistance than that exhibited by the polymer. These results may contribute in future works aiming the elucidation of the mechanism of this phenomenon in organic materials. The synthesis of the oligomers was performed by Wittig reaction. Molecules of well defined structure and trans configuration were obtained and characterized by spectroscopic methods. Aiming other applications, the oligomers and polymer were tested in gas sensors, for the discrimination between different types and brands of tea. It was observed that the greater the molecule, the greater the selectivity, and therefore, the polymer gave the best results.

Observando o atual interesse em polímeros organometálicos para diversas aplicações, foi feita a síntese de uma série de polímeros conjugados contendo ferroceno na cadeia principal visando à investigação de suas propriedades, em especial fenômenos magnetorresistivos, magneto-ópticos e de óxido-redução. Os polímeros preparados pelo método de McMurry foram os seguintes: PFV: poli(1,1\'-ferrocenilenovinileno) e PFV-DOPPV-M: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno]. Outros dois polímeros foram preparados utilizando o método de polimerização de Wittig, o PFV-DOPPV-W: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno] e o PFV-DMPPV: poli[1,1\'-ferrocenileno-vinileno-alt-(2,5-dimetóxi)-1,4-fenilenovinileno]. A síntese de polímeros contendo segmentos π-conjugados equenos e bem definidos separados por segmentos não-conjugados é uma das melhores stratégias para a obtenção de polímeros emissores de luz azul. Com base nesse argumento foi feita a síntese de uma série de polímeros contendo um derivado metoxilado de bisfenol-A (BPA) na cadeia principal, alternando-se com unidades de PPV ou PFV que apresentam segmentos conjugados bem definidos. Os polímeros preparados foram os seguintes: BPA-DOPPV:poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-(di-n-octilóxi)-1,4-divinilbenzeno]; BPA-PPV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,4-ivinilbenzeno]; BPA-DMPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dimetóxi-1,4-ivinilbenzeno]; BPA-DBPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dibromo-1,4-divinilbenzeno] e BPA-PFV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,1\'-divinil-ferroceno]. Todos os polímeros obtidos foram caracterizados por métodos espectroscópicos (UV-VIS, IR, RMN), análises térmicas, SEC, entre outras. Algumas aplicações foram estudadas para esses polímeros, tais como a construção de um eletrodo de ORP modificado, a produção de diodos orgânicos emissores de luz (OLEDs) e a determinação da resposta \"olfativa\" de sensores de gases. / Owing to the current interest in organometallic polymers and their applications, a group of conducting polymers containing ferrocene in the main chain was synthesized aiming the study of their magnetoresistive, magneto-optic and redox properties. The following polymers were prepared via McMurry method: poly(1,1\'-ferrocenylenevinylene) (PFV) and poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-M). Two other polymers were synthesized via Wittig method: poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-W) and poly[1,1\'-ferrocenylene-vinylene-alt-(2,5-dimethoxy)-1,4-phenylenevinylene] (PFV-DMPPV). The synthesis of polymers with well-defined small π-conjugated segments separated by non-conjugated segments is one of the best strategies to obtain blue light emitting polymers. Based on this statement the synthesis of several polymers formed by methoxylated bisphenol-A (BPA) alternated with PPV or PFV units was performed. The prepared polymers were the following: poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-(di-n-octiloxy)-1,4-divinylbenzene] (BPA-DOPPV), poly [2,2-bis(4-methoxyphenyl)-propane-alt-1,4-divinylbenzene] (BPA-PPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dimethoxy-1,4-divinylbenzene] (BPA-DMPPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dibromo-1,4-divinylbenzene] (BPA-DBPPV) and poly[2,2-bis(4-methoxyphenyl)-propane-alt-1,1\'-divinylferrocene] (BPA-PFV). All the synthesized polymers were characterized by spectroscopic methods (UV/VIS, IR, NMR), thermal analysis, SEC, among others. Some applications to these polymers were studied: a modified ORP electrode, organic light emitting devices (OLEDs) and gas sensors.

Este trabalho apresenta o estudo do comportamento da mobilidade de portadores em transistores SOI nMOS e pMOS avançados planares e de porta tripla através de simulações tridimensionais e resultados experimentais. Devido à sua estrutura física, os transistores de porta tripla apresentam duas mobilidades, uma referente ao canal de condução na porta superior (orientação cristalográfica ) e uma referente ao canal de condução das portas laterais (orientação cristalográfica ). Inicialmente foi feito um estudo comparativo dos métodos de extração da mobilidade através de simulações numéricas tridimensionais dos dispositivos de porta tripla, tendo como objetivo analisar o comportamento dos diferentes métodos de extração da mobilidade efetiva de portadores e separação das mobilidades da porta superior e laterais, para fazer a escolha dos métodos mais adequados para aplicação nos resultados experimentais. De modo geral todos os métodos estudados sofrem maior influência com a redução do comprimento de canal devido aos efeitos da resistência série e de canal curto. Dentre os métodos estudados o que apresenta maior influência com a redução do comprimento de canal é o por gm,máx que apresentou maiores erros. E o método por Y-function apresentou o melhor comportamento com a redução do comprimento de canal, seguido pelo método Split C-V. Para os dispositivos com comprimento de canal acima de 0,5micro metros o maior erro encontrado foi de 13% para os métodos McLarty e Y-function. Neste caso os métodos por gm,máx e Split C-V apresentaram melhores resultados. Com relação à largura de canal os métodos por gm,máx e Split C-V tiveram os melhores resultados com a utilização de dispositivos de porta tripla. Foi observado que para dispositivos com Wfin maior que 0,7 micro metros os maiores erros encontrados foram de 11,2 % para o método Y-function e 10% para o método por gm,máx. No entanto, para dispositivos com Wfin menores que 0,7 micro metros os métodos Y-function e McLarty apresentaram os piores resultados chegando a quase 50% de erro para o dispositivo mais estreito (Wfin = 50nm). Quanto aos métodos de separação das mobilidades todos os métodos estudados apresentaram bons resultados e se mostraram eficientes mostrando um erro máximo de 11,3%. O que os diferencia é o grau de dificuldade de aplicação. Posteriormente foram realizadas medidas experimentais a fim de possibilitar o entendimento dos fenômenos físicos relacionados à mobilidade de portadores. Primeiramente foram analisados os dispositivos de porta tripla em temperatura ambiente e em baixa temperatura para dispositivos nMOS e pMOS. O estudo foi feito em dispositivos com diferentes comprimentos e larguras de canal a fim de analisar os efeitos das dimensões nesta tecnologia. Em seguida são apresentados os resultados para dispositivos SOI avançados planares em temperatura ambiente com variação da largura de canal e com aplicação de tensão no substrato, com objetivo de analisar o comportamento da mobilidade na primeira interface (óxido de porta/canal) e na segunda interface (óxido enterrado/canal). Esse estudo foi realizado com a aplicação de dois diferentes métodos de extração da mobilidade. Por fim foi feito um estudo de um novo método para extração da mobilidade de portadores chamado de magnetoresistência que consiste na aplicação de um campo magnético perpendicular ao fluxo de corrente do transistor. O uso do campo magnético altera a resistividade do canal, de onde é possível extrair a mobilidade. Foram apresentados os resultados com a utilização deste método para os dispositivos de porta tripla tipo nMOS com variação do comprimento de canal (90 a 910 nm) e da temperatura (200K a 77K). / This work presents a study of the carrier mobility behavior in planar and triple gate advanced SOI nMOS and pMOS transistors through three-dimensional simulations and experimental results. Due to its physical structure, the triple gate transistors presents two mobilities, one referring to the conduction channel on the top gate (crystallographic orientation ) and one referring to the conduction channel on the lateral gates (crystallographic orientation ). Initially, a comparative study of the mobility extraction methods through three-dimensional numerical simulations of the triple gate devices was made, with the purpose to analyze the behavior of different effective carrier mobility and separation of top and lateral gates mobilities extraction methods, to make the choice of the suitable methods for application in the experimental results. From a general way, all the studied methods suffer higher influence with channel length reduction due to short channel and the series resistance effects. Among the studied methods, the method by gm,max presents the higher influence with the channel length reduction that shows the bigger errors. The Y-function method presents the best behavior with the channel length reduction, followed by Split C-V method. For the devices with channel length above 0.5 mirco meters the highest error founded was 13% for McLarty and Y-function methods. In this case the gm,max and Split C-V methods presented the better results. With regard to the channel width the Split C-V and gm,max methods presented the better results with the use of triple gate devices. It was observed that for devices with Wfin higher than 0.7 mirco meters the highest errors founded were 11.2% for the Y-function method and 10% for gm,max method. Nevertheless, for devices with Wfin smaller than 0.7 micro meters the Yfunction and McLarty methods presented the worst results arriving almost 50% of error for the narrowest device (Wfin = 50nm). With regard to mobilities separation methods all the studied methods presented good results and had shown efficient showing a maximum error of 11.3%. The difference between them is the application difficulty level. After that, experimental measures were made in order to make possible the understanding of physical phenomena related to carrier mobility. Firstly, it was analyzed the triple gate devices at room and low temperatures for nMOS and pMOS devices. The study was done in devices with different channel lengths and widths in order to analyze the dimensions effects in this technology. After that it was present the results for planar advanced SOI devices at room temperature with variation of channel width and with the application of back gate voltage, with the purpose to analyze the behavior of the mobility in the first interface (gate oxide/channel) and second interface (buried oxide/channel). This study was done with the application of two different mobility extraction methods. Finally a study of a new mobility extraction method called magnetoresistance was made; this method consists in a perpendicular magnetic field application to transistor current flow. The uses of magnetic field change the channel resistivity, where it is possible to extract the mobility. It was presented results with the use of this method for triple gate nMOS devices with variation of channel length (90 a 910 nm) and temperature (200K to 77K).

Dans les dernières années, la miniaturisation progressive des dispositifs de stockage magnétique a rendu nécessaire de comprendre comment les propriétés physiques sont modifiées par rapport à l'état massif lorsque les dimensions sont réduites à l'échelle nanométrique. Pour cette raison, une méthode précise de préparation et caractérisation de nanostructures est extrêmement importante. Ce travail se concentre sur les propriétés magnétiques et de transport de nanoparticules de cobalt incorporées dans des matrices de cuivre. Notre dispositif expérimental nous permet de contrôler indépendamment la taille moyenne des agrégats, la concentration et la composition chimique. La production des agrégats de cobalt est basée sur la pulvérisation cathodique et l'agrégation dans la phase gazeuse. Cette source permet de produire des agrégats dans une large gamme de taille, de un à plusieurs milliers d'atomes. Dans un premier temps, nous avons étudié le rôle des interactions entre particules dans les propriétés de transport et magnétiques, en augmentant la concentration des nanoparticules de cobalt (à partir de 0.5 % à 2.5 % et 5 %). Nos résultats démontrent les précautions nécessaires et constituent une base solide pour de futures études sur les propriétés spintroniques des systèmes granulaires. Dans le but de décrire les propriétés magnétiques intrinsèques d'agrégats, nous avons préparé des échantillons fortement dilués (_0.5%) pour différents diamètres d'agrégats de 1.9 nm à 5.5 nm. Nous avons constaté que les propriétés magnétiques sont dépendantes de la taille. L'utilisation d'une caractérisation magnétique complète, sensible à la variation de l'anisotropie magnétique efficace, nous montre que l'anisotropie magnétique est dominée par les contributions de la surface ou de la forme des nanoparticules / In the last years, the progressive miniaturization of magnetic storage devices has imposed the necessity to understand how the physical properties are modified with respect to the bulk when the dimensions are reduced at the nanometric scale. For this reason an accurate method of preparation and characterization of nanostructures is extremely important. This work focuses on the magnetic and transport properties of cluster-assembled nanostructures, namely cobalt nanoparticles embedded in copper matrices. Our setup allows us to independently control the mean cluster size, the concentration and the chemical composition. The cobalt cluster production is based on magnetron sputtering and gas phase aggregation. The performance of the source permits a wide range of cluster masses, from one to several thousand atoms. As a first step we studied the role of inter-particle interactions in the transport and magnetic properties, increasing the cobalt nanoparticle concentration (from 0.5% to 2.5% and 5%). Our results demonstrate the necessary precautions and constitute a solid basis for further studies of the spintronic properties of granular systems. Finally, in order to describe the intrinsic magnetic properties of cluster-assembled nanostructures, we prepared strongly diluted samples (_0.5%) for different cluster sizes from 1.9 nm to 5.5 nm. We found that the magnetic properties are size-dependent. Using a complete magnetic characterization, sensitive to the change in the effective magnetic anisotropy, we show that the magnetic anisotropy is dominated by the contributions of the surface or of the shape of the nanoparticles

Conselho Nacional de Desenvolvimento Científico e Tecnológico / We analyze the possibility of using aluminum nitride (AlN) as a piezoelectric tunnel barrier in magnetic or non-magnetic tunnel junctions. Samples in the form of monolayers, bilayers, multilayers and tunnel junctions were produced by magnetron sputtering from an aluminum metal target. The insulating AlN barrier was grown in a reactive atmosphere of argon and nitrogen. Through the monolayers and bilayers we investigated the growth conditions of AlN onto different substrates, buffer, and cap layers. Using x-ray diffraction and transmission electronic microscopy it was possible to verify the excellent degree of texturing of AlN films with the direction <002> perpendicular the substrate plane. The multilayer showed that the use of AlN as a piezoelectric tunnel barrier is feasible, since the crystallographic structure remains when the thickness of the AlN is drastically reduced to a thickness so that quantum tunneling is possible. We also held magnetization measurements and tunnel magnetoresistance in magnetic tunnel junctions. It is important that the coercive fields of the electrodes are different, so that from the application of an external field can be obtained a situation where the magnetization of the electrodes point in opposite directions. The average thickness of the tunnel barrier in multilayers and tunnel junctions were obtained by x-ray diffraction and transmission electron microscopy. The nonlinear IxV curves of tunnel junctions were measured at room temperature and at lower temperatures, and showed a linear behavior at low voltages, and a nonlinear behavior for higher voltages. Measurements of tunnel magnetoresistance showed spin dependent tunneling. Simulations using the Simmons model for symmetric barrier allowed us to obtain the effective area of tunneling, effective thickness of the barrier, and the height of the barrier. Effective area values are some orders of magnitude smaller than the actual area of the junctions, and transmission electron microscopy pictures show that the tunnel transport occurs at some hot spots. In the measurements of the IxV curves we observe a minimum thickness of 6nm for the insulating barrier to be piezoelectric, as the polarization effect was detected. The curves have a shift to negative bias, both in magnetic and non-magnetic tunnel junctions. Using the results of the simulation we verified the exponential pattern of resistance, normalized by the effective area of tunneling, depending on the thickness of the insulator. For effective barrier thickness above 1nm, the barrier height increases with insulator thickness, as expected. For barrier thickness between 0;8 and 1nm, there is a decline in barrier height. We have not found recorded in the literature this type of behavior for normal insulating systems or for piezoelectric materials. / Nesta tese analizamos a possibilidade do uso de nitreto de alumínio (AlN) como barreira túnel piezoelétrica em junções túnel magnéticas ou não magnéticas. Amostras na forma de monocamadas, bicamadas, multicamadas e junções túnel foram produzidas pela técnica de "magnetron sputtering"a partir de um alvo metálico de alumínio. A barreira isolante de AlN foi crescida em uma atmosfera reativa de argônio e nitrogênio. Através das monocamadas e das bicamadas investigamos as condições de crescimento do AlN sobre diferentes substratos, e camadas "buffer"e camadas "cap". Utilizando difração de raio-x e microscopia eletrônica de transmissão foi possível verificar o excelente grau de texturização dos filmes de AlN com a direção <002> perpendicular ao plano do substrato. As multicamadas mostraram que a utilização do AlN como barreira túnel piezoelétrica é viável, pois a estrutura cristalográfica se mantém quando a espessura do AlN é drasticamente reduzida até uma espessura que ocorra o fenômeno de tunelamento quântico. Também foram realizadas medidas de magnetização e de magnetorresistência túnel em junções túnel magnéticas. Nestas, é importante que os campos coercivos dos eletrodos sejam diferentes, para que a partir da aplicação de um campo externo seja possível obter uma situação onde os momentos magnéticos dos eletrodos apontem em sentidos contrários. A espessura média da barreira túnel nas multicamadas e junções túnel foram obtidas através de difração de raio-x e de microscopia eletrônica de transmissão. As curvas IxV não lineares das junções túnel foram medidas a temperatura ambiente e a baixa temperatura, e apresentaram um comportamento linear a baixas tensões e uma relação não linear para tensões mais elevadas. Para a realização de simulações foi utilizado modelo de Simmons para barreira simétrica. Os parâmetros obtidos através deste modelo são, a área efetiva de tunelamento Se f , a espessura efetiva da barreria te f e a altura da barreira f0. Através da observação dos resultados da área efetiva que são algumas ordens de grandeza menores que a área real da junção, e das imagens de microscopia eletrônica de transmissão podemos afirmar que o transporte túnel se dá por "hot spots". Nas medidas das curvas IxV observamos uma espessura mínima de 6nm para a barreira isolante piezoelétrica onde o efeito de polarização foi detectado. As curvas sofrem um deslocamento para tensões negativas, isto ocorre tanto nas junções túnel magnéticas como nas não magnéticas. Utilizando os resultados dos ajustes foi possível verificar o caráter exponencial da resistência, normalizada pela área efetiva de tunelamento, em função da espessura do isolante. Para espessura efetiva da barreira, a partir de 1nm, a altura da barreira aumenta com a espessura do isolante. Resultado este esperado, mostrando uma tendência do crescimento da altura da barreia com a espessura. Para espessura de barreia entre 0;8 e 1nm, há presença de um declínio na altura da barreira. Não encontramos registro na literatura deste tipo de comportamento para sistemas isolantes normais nem para materiais piezoelétricos. Medidas de magnetorresistência túnel nas junções mostraram que o tunelamento é dependente de spin.

The study of the co-existence of singlet superconductivity and ferromagnetism in bulk materials has been a long standing and intriguing problem in condensed matter physics since the superconductivity and ferromagnetism are quantum mechanically antagonistic to each other (i.e. parallel alignment of spins in the ferromagnet and Cooper pairs with oppositely aligned spins in the superconductor).Though it is incompatible to have the coexistence of singlet superconductivity and ferromagnetism in bulk compound, it is highly possible to artificially fabricate superconductor (S)/ferromagnet (F) heterostructures using various thin film deposition techniques and to study the interplay between the two antagonistic quantum phases over their characteristic length scales. The mutual interaction between the two competing order parameters at the interface in hybrid S/F heterostructures give rise to a variety of novel exotic physical phenomena. Moreover, the spin polarized transport and tunneling experiments in S/F heterostructures seem to be very much useful for providing important information on the spin dependent electronic properties of high Tc superconductors below and above the transition temperature. This can help a lot to understand the long debated unusual electronic properties and pairing mechanism of high Tc superconductors. In addition to the rich fundamental aspects buried in the study of S/F heterostructures, one can also use the spin dependent properties of high Tc superconductors in S/F heterostructures to design new spintronics devices from the application point of view. In this thesis an attempt is made to understand the spin polarized electron transport across S/F heterostructures where the superconductor used is YBa2Cu3O7-δand the ferromagnets are La0.5Sr0.5CoO3, La0.7Sr0.3MnO3, and La0.7Ca0.3MnO3. In addition, the magnetic properties of the La1-x SrxCoO3 system is also investigated in detail. The thesis is organized in six chapters and a brief summary of each chapter is given below. Chapter1 gives a brief introduction to the superconductivity, ferromagnetism and the interplay between superconductivity and ferromagnetism at the interface of S/F heterostructures. It also describes various exotic phenomena and the proximity effect that emerges at the S/F interface due to competing interactions. In addition, it also includes a discussion on various types of indirect magnetic interactions and basic idea about the spin glass ordering in magnetic materials. Chapter 2 outlines the basic principles of various experimental techniques employed for the work presented in this thesis. Chapter 3 describes an extensive magnetic and magnetotransport study of the La1-xSrxCoO3 system to understand the manifestation of various magnetic phases associated with it. The first section of this chapter aims at understanding the phase separation scenario in La0.85Sr0.15CoO3. Since the magnetic behavior of La0.85Sr0.15CoO3 is in the border area of spin glass (SG) and ferromagnetic (F) region in the x-T phase diagram; it has been subjected to a controversial debate for the last several years; while some groups show evidence for magnetic phase separation (PS), others show SG behavior. However, the experimental results presented in this thesis clearly demonstrate that the instability towards PS with inhomogeneous states or competing phases in La0.85Sr0.15CoO3 is not inherent or intrinsic to this compound; rather it is a consequence of the heat treatment condition during the preparation method. It is realized that low temperature annealed sample shows PS whereas the high temperature annealed sample shows the characteristics of canonical SG behavior. The second section of this chapter deals with a detailed study about the possible existence of various magnetic phases of La1-xSrxCoO3 in the range 0 ≤x ≤0.5. The dc magnetization study for x ≥0.18 exhibits the characteristic of ferromagnetic like behavior and for x<0.18, the SG behavior. More strikingly, the dc magnetization studies for x<0.18 rules out the existence of any ferromagnetic correlation that gives rise to irreversible line in the spin glass regime. The ac susceptibility study for x<0.18, exhibits a considerable frequency dependent peak shift, time-dependent memory effect, and the characteristic spin relaxation time scale τo ~10-13s, all pointing towards the characteristics of SG behavior. On the other hand, the ac susceptibility study in the higher doping ferromagnetic side exhibits the coexistence of glassy and ferromagnetic behavior. The glassiness is interpreted in terms of inter-cluster interaction. The reciprocal susceptibility vs. T plot in the paramagnetic side adheres strictly to Curie-Weis behavior and does not provide any signature for the pre-formation of ferromagnetic clusters well above the Curie temperature. The magnetotransport study reveals a cross over from metallic behavior to semiconducting like behavior for x ≤0.18 and the system exhibits a peak in MR in the vicinity of Tc on the metallic side and a large value of MR at low temperature on the semiconducting side. Such high value of MR in the semiconducting spin glass regime is strongly believed due to spin dependent part of random potential distribution. Based on the present experimental findings, a revised phase diagram has been constructed and each phase has been characterized with its associated properties. Chapter 4 deals with a comprehensive study of thickness dependent structural, magnetic and magnetotransport properties of oriented La0.5Sr0.5CoO3 thin films grown on LaAlO3 by pulsed laser deposition. The films are found to undergo a reduction in Curie temperature with decrease in film thicknesses and it is primarily caused by the finite size effect since the finite scaling law holds good over the studied thickness range. The contribution from strain induced suppression of the Curie temperature with decreasing film thickness is ruled out since all the films exhibit a constant out of plane tensile strain (0.5%) irrespective of their thickness. The coercivity of the films is observed to be an order of magnitude higher than that of the bulk. This is attributed to the local variation of the internal strain that introduces strong pinning sites (via. magnetoelastic interaction) for the magnetization reversal. In addition, an increase in the electrical resistivity and coercivity is observed with decrease in film thickness and it is strongly believed to be due to the interface effect. Chapter5 reports on the investigation of the effect of ferromagnetic layer on (i) pair breaking effect and (ii) vortex dynamics in different superconducting(S)/ ferromagnetic (F) bi-layers grown by pulsed laser deposition. The current (I) dependent electrical transport studies in the S/F bi-layers exhibit a significant reduction in the superconducting transition temperature with the increase in applied current as compared to single YBa2Cu3O7-δlayer and it follows I2/3 dependence in accordance with the pair breaking effect. Moreover, the superconducting transition temperature in YBa2Cu3O7-δ/ La0.7Sr0.3MnO3 bilayer is surprisingly found to be much larger than the YBa2Cu3O7-δ/La0.5Sr0.5CoO3. It appears that the current driven from a material with low spin polarization (-11%) like La0.5Sr0.5CoO3 can also suppress the superconductivity to a larger extent. This indicates that the degree of spin polarization of the ferromagnetic electrode is not the only criteria to determine the suppression of superconductivity by pair breaking effect in superconductor/ferromagnet hybrid structures; rather the transparency of the interface for the spin polarization, the formation of vortex state due to the stray field of ferromagnetic layer and the ferromagnetic domain patterns might play significant roles to determine such effect. More interestingly, the spin diffusion length in YBa2Cu3O7-δis found have a much longer length scale than that reported earlier in the study of F/ S heterostructures. The activation energy (U) for the vortex motion in S/F bilayers is reduced remarkably by the presence of the F layers. In addition, the U exhibits a logarithmic dependence on the applied magnetic field in the S/F bilayers suggesting the existence of decoupled 2D pancake vortices. This result is discussed in terms of the reduction in the effective S layer thickness and the weakening of the S coherence length due to the presence of F layers. Chapter 6 deals with the magnetotransport study on two different kind of F/S/F trilayers viz. La0.7Sr0.3MnO3/YBa2Cu3O7-δ/La0.7Sr0.3MnO3 and La0.5Sr0.5CoO3/YBa2Cu3O7-δ/La0.7Ca0.3MnO3 with changes in superconducting and ferromagnetic layer thickness. The activation energy for the vortex motion in F/S/F trilayer is found to decrease considerably as compared to S/F bilayer and it also exhibits a logarithmic dependence on magnetic field which gives the signature of existence of decoupled 2D pancake vortices. The magnetotransport study reveals that a much lower magnetic field is required to suppress the superconductivity in trilayer as compared to single YBCO layer. Moreover, the transport study also reveals that a threshold thickness of YBCO is required for the onset of superconductivity in trilayer structure and the onset of superconducting Tc increases with increase in YBCO thickness. More strikingly, a remarkable unconventional anisotropic superconducting Tc (Tc H║c-axis<Tc H⊥c-axis) is observed in La0.5Sr0.5CoO3/YBa2Cu3O7-δ/La0.7Ca0.3MnO3 trilayer for the magnetic field applied parallel and perpendicular to c-axis. The trilayer system also exhibits a huge positive magnetoresistance (MR) below superconducting Tc and it could arise due to vortex dissipation in liquid state of superconductor in the tri-layer structure. Finally, the thesis concludes with a general conclusion and an outlook in this area of research.

Cette thèse porte sur l’étude des effets de la lumière sur une jonction tunnel magnétique (JTM). Une JTM est constituée d’une couche isolante d’épaisseur nanométrique située entre deux couches magnétiques. Lorsqu’un courant électrique est injecté dans une telle structure, une tension apparaît. Cette tension dépend de l’orientation relative des aimantations des 2 couches magnétiques : c’est l’effet de magnétorésistance tunnel. Nous avons pu montrer dans ce travail de thèse qu’une observation similaire est obtenue lorsque la jonction est irradiée avec de la lumière. En étudiant l’influence du substrat, de la position du faisceau lumineux, de la longueur d’onde de la lumière ainsi que de la réponse du système a un pulse laser, nous avons pu mettre en évidence la présence d’effets photovoltaïque et Seebeck. Ces résultats montrent qu’il est possible, grâce à la lumière solaire, de lire l’information de mémoires magnétiques (type M-RAM) constituées d’une JTM / This thesis is devoted to the study of the effects of light on a magnetic tunnel junction (MTJ). A MTJ is made of a nanometer thick insulating layer sandwiched between the two magnetic layers. When an electric current is injected into such a structure, a voltage can be measured across the insulating layer. This voltage depends on the relative orientation of the magnetizations of the two magnetic layers. This is known as the tunnel magneto-resistance effect. We have shown in this thesis that voltage depending on the orientation of the magnetic layers can be measured when the junction is illuminated with light. By studying the influence of the substrate, the position of the light beam, the wave length of light and the response of the system to a laser pulse, we have been able to demonstrate the presence of photovoltaic and Seebeck effects. These results show that it is possible, thanks to the sunlight, to read the information from magnetic memory (MRAM) made of a MTJ

O objetivo sintético do presente trabalho é a síntese, caracterização e aplicação do polímero conjugado inédito de baixa Egap, poli(9,9-n-dioctil-2,7-fluorenilenovinilenoalt- 4,7-dibenzotiadiazol-2,5-tiofeno) (PF-BTB). A rota sintética proposta envolve 10 passos, dentre os quais destacam-se reações como a de Wittig e acoplamentos de paládio (Stille e Heck). A caracterização da molécula envolveu as técnicas de RMN de 1H, espectroscopias de infravermelho, UV-VIS e fluorescência, voltametria cíclica, análises térmicas (TGA e DSC) e cromatografia por permeação em gel. A primeira aplicação do polímero se deu na construção de um nariz eletrônico capaz de identificar com ótima precisão três variedades de tabaco (Burley, Flue Cured e Oriental), além de oito diferentes marcas comerciais de cigarro. Esses estudos, além da aplicação prática, serviram para mostrar a eficiência de um tipo novo de sensor para narizes eletrônicos, composto por um mesmo polímero condutor dopado com diferentes porfirinas, denominado sensor híbrido. Por fim, filmes finos do polímero PF-BTB, depositados sobre eletrodos de ouro, tiveram suas propriedades magnetorresistivas testadas em diferentes condições, apresentando valores maiores que 40%, o que é considerado muito alto para esse tipo de fenômeno em filmes poliméricos. / The aim of this work is the synthesis, characterization and application of a novel low Egap conjugated polymer, poly(9,9-n-octyl-2,7-fluorenevinylene-alt-4,7- benzothiadiazole-2,5-thiophene) (PF-BTB). The synthetic pathway comprises 10 steps, involving reaction such as Wittig\'s and palladium cross-couplings (Heck\'s and Stille\'s). The molecule was characterized by the following techniques: 1H NMR, spectroscopic analyses (FTIR, UV-VIS and fluorescence spectroscopy), cyclic voltammetry, thermal analyses (TGA and DSC) and gel permeation chromatography. The polymer was first used to build an electronic nose, which successfully identified three tobacco types (Burley, Flue Cured and Oriental) with high accuracy. The same system could also identify eight different cigarette brands. Besides this practical application, the experiments were designed to show the power of a new sensor type, composed by a single conductive polymer doped with different porphyrins, a composite sensor. Finally, thin films of PF-BTB deposited onto gold electrodes had their magnetoresistive properties tested under different conditions. The material showed magnetoresistance values higher than 40%, which is considered outstanding for this kind of polymeric films.