• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 167
  • 32
  • 24
  • 21
  • 19
  • 12
  • 8
  • 7
  • 3
  • 3
  • 3
  • 3
  • 3
  • 3
  • 3
  • Tagged with
  • 341
  • 103
  • 76
  • 55
  • 50
  • 49
  • 46
  • 45
  • 44
  • 37
  • 36
  • 36
  • 33
  • 33
  • 33
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
241

Auswirkung lokaler Ionenimplantation auf Magnetowiderstand, Anisotropie und Magnetisierung

Osten, Julia 01 March 2016 (has links) (PDF)
Die vorliegende Arbeit beschäftigt sich mit den Auswirkungen der Ionenimplantation auf die Materialeigenschaften verschiedener magnetischer Probensysteme. Durch die Implantation mit Ionen kann man auf vielfältige Art und Weise die Eigenschaften von magnetischen Materialien modifizieren und maßschneidern, so zum Beispiel die Sättigungsmagnetisierung und die magnetische Anisotropie. Aus der Untersuchung von drei verschiedenen Probensystemen ergibt sich die Dreigliederung des Ergebnisteils. Im ersten Teil der Arbeit, dem Hauptteil, wird die Strukturierung von Permalloyschichten durch Ionen und der Einfluss auf den anisotropen Magnetowiderstand (AMR) untersucht. Der AMR ist direkt abhängig von der Ausrichtung der Magnetisierung eines Materials zum angelegten Strom. Um die Magnetisierungsrichtung sichtbar zu machen wurde ein Kerrmikroskop benutzt. Dieses wurde im Rahmen dieser Arbeit technisch erweitert um gleichzeitig auch den AMR messen zu können. Damit war es erstmalig möglich den AMR und die magnetischen Domänenkonfigurationen direkt zu vergleichen. Durch eine weitere Modifikation des Kerrmikrosops ist es möglich quantitative Bilder eines kompletten Ummagnetisierungsvorganges zu messen. Es konnte gezeigt werden, dass der berechnete AMR des Bildausschnittes mit dem gemessenen übereinstimmt. Der AMR ist abhängig von der Streifenbreite, der Streifenausrichtung zum Strom, der Stärke der induzierten Anisotropie, dem angelegten Feldwinkel und der Sättigungsmagnetisierung. Im Fall von schmalen Streifen führt das zweistufige Schalten zu einem AMR-Maximum, wenn die Streifen mit der niedrigeren Sättigungsmagnetisierung geschaltet haben. Das Zusammensetzen der Streifenstruktur ermöglicht es den AMR gezielt zu manipulieren. Bei geringer induzierter Anisotropie sind verschiedene komplexe Domänen messbar, welche sich in einem asymmetrischen AMR widerspiegeln. So kann der AMR auf vielfältige Weise manipuliert und deren Abhängigkeit von den magnetischen Domänen mittels Kerrmikroskopie gemessen werden. Im zweiten Teil wurde die Erzeugung eines Anisotropiegradienten durch Ionenimplantation in einem Speichermedium untersucht. Hierbei handelt es sich um eine Kooperation mit Peter Greene (University of California Davis) und Elke Arenholz (Lawrence Berkeley Laboratory). Nachdem die Ionenverteilung in dem Material mit TRIDYN simuliert wurde, erfolgte eine Implantation in die oberen Schichten der Co/Pd Multilagen. Dieses hat eine Veränderung der magnetischen Anisotropie zur Folge. Die Ummagnetisierungskurven sind mit dem polaren magnetooptische Kerreffekt (polaren MOKE) und Vibrationsmagnetometrie vermessen worden. Außerdem fand eine Strukturanalyse mit Röntgenreflektrometrie und Röntgendiffraktometrie statt. Die abschließende Beurteilung des Schaltverhaltens erfolgte durch die Auswertung der Ummagnetisierungskurven erster Ordnung. Es ist uns gelungen die oberen Schichten durch die Implantation weichmagnetisch zu machen. Die darunterliegenden Schichten sind noch hartmagnetisch und das Material zeigt textit{exchange spring} Verhalten. Es erfüllt somit die Voraussetzungen, um als Speichermedium genutzt zu werden. Damit konnte erfolgreich gezeigt werden, dass man mit Ionenimplantation einen Anisotropiegradienten in einem Speichermedium erzeugen kann und dadurch das gewünschte Schaltverhalten erzeugt. Im dritten Teil, in einem Projekt mit Björn Obry (TU Kaiserslautern), geht es um die Erzeugung eines Spinwellenleiters und eines magnonischen Kristalls durch die Ionenimplantation in Permalloy. Zur Herstellung des Spinwellenleiters und des magnonischen Kristalls macht man sich die lokale Reduzierung der Sättigungsmagnetisierung durch die Implantation zu nutze. Es wurden Messungen mit dem polaren MOKE gemacht. Die Spinwellencharakterisierung ist mit dem Brillouin-Lichtstreumikroskop durchgeführt worden. Es war möglich die Ionenimplantation zur Herstellung eines magnonischen Kristalls und eines Spinwellenleiters zu nutzen. Das Verändern von magnetischen Materialeigenschaften durch Implantation eröffnet somit verschiedene Möglichkeiten. Mit Ionenimplantation kann man Permalloy so strukturieren, dass man den AMR gezielt manipulieren kann. Außerdem wurde Ionenimplantation genutzt um einen Anisotropiegradienten in einem Speichermedium zu erzeugen. Durch diesen Anisotropiegradient konnte das Schaltverhalten gezielt modifiziert werden. Mit Hilfe von Ionenimplantation kann man auch ein magnonisches Kristall und einen Spinwellenleiter herstellen. / This thesis deals with magnetic modification of ferromagnetic films by ion implantation, such as induced changes of the magnetic anisotropy and changes in the saturation magnetization. Three different sample structures were investigated. Therefore the result section is divided into three parts. The influence of ion induced magnetic patterning on the anisotropic magnetoresistance (AMR) is investigated in the first part. The AMR directly depends on the angle between the applied current and the magnetization of the material. To investigate this relationship a Kerr microscopy,for observing the magnetic domains was combined with resistance measurements. The measurements were performed on stripe patterned permalloy samples. This is the main part of the thesis. The creation of an anisotropy gradient in a storage media by ion implantation is the topic of the second part. It was a collaborative project with Peter Greene (University of California Davis) and Elke Arenholz (Lawrence Berkeley Laboratory). The goal was to create a magnetic anisotropy gradient by introducing ions in the upper layer of the Co/Pd- multilayer. After TRIDYN simulations of the ion distribution, the implantation was performed and the magnetization curves were measured with polar magneto-optical Kerr effect and vibrating sample magnetometry. In addition to this, structural characterization was carried out by x-ray reflection and x-ray diffraction measurements. For the final determination of the switching behavior first order reversal curves were analyzed. The aim of the third part was to create a spin wave guide and a magnonic crystal by local ion implantation. In this project with Björn Obry (TU Kaiserslautern) the characteristic of the ions to reduce the saturation magnetization in permalloy was used and the effect on the spin wave propagation was analyzed. Polar MOKE was performed to determine the saturation magnetization. Brillouin light scattering microscopy was used to analyze the spin wave behavior inside the material.
242

Growth and characterization of Ni←xCu←1←-←x alloy films, Ni←xCu←1←-←x/Ni←yCu←1←-←y multilayers, and nanowires

Kazeminezhad, Iraj January 2001 (has links)
No description available.
243

Transport studies in p-type double quantum well samples

Hyndman, Rhonda Jane January 2000 (has links)
No description available.
244

Magnetotransport studies of semimetallic InAs/GaSb structures

Khym, Sungwon January 2000 (has links)
No description available.
245

Polarization Rotation Study of Microwave Induced Magnetoresistance Oscillations in the GaAs/AlGaAs 2D System

Liu, Han-Chun 15 December 2016 (has links)
Previous studies have demonstrated the sensitivity of the amplitude of the microwave radiation-induced magnetoresistance oscillations to the microwave polarization. These studies have also shown that there exists a phase shift in the linear polarization angle dependence. But the physical origin of this phase shift is still unclear. Therefore, the first part of this dissertation analyzes the phase shift by averaging over other small contributions, when those contributions are smaller than experimental uncertainties. The analysis indicates nontrivial frequency dependence of the phase shift. The second part of the dissertation continues the study of the phase shift and the results suggest that the specimen exhibits only one preferred radiation orientation for different Hall-bar sections. The third part of the dissertation summarizes our study of the Hall and longitudinal resistance oscillations induced by microwave frequency and dc bias at low filling factors. Here, the phase of these resistance oscillations depends on the contact pair on the device, and the period of oscillations appears to be inversely proportional to radiation frequency.
246

Jonctions tunnel magnétiques à aimantation perpendiculaire : anisotropie, magnétorésistance, couplages magnétiques et renversement par couple de transfert de spin / Perpendicular magnetic tunnel junctions : anisotrpy, magnetoresistance, indirect exchange coupling and spin torque switching phenomena

Nistor, Lavinia 07 October 2011 (has links)
Le but de cette thèse est l'étude des propriétés de jonctions tunnel magnétiques à aimantation perpendiculaire, en utilisant l'anisotropie perpendiculaire présente à l'interface entre un métal magnétique et un oxyde. En théorie, dans le cas des applications mémoires, les jonctions tunnel perpendiculaires devraient nécessiter moins d'énergie (courant) pour l'écriture par courant polarisé en spin. Mais la fabrication de telles structures représente un défi et une tâche difficile puisque les propriétés de transport (TMR) et d'anisotropie imposent des contraintes sur les matériaux utilisées en limitant la fenêtre de travail, notamment en ce qui concerne l'épaisseur des couches magnétiques. Pour atteindre cet objectif nous avons tout d'abord étudié les propriétés de ces structures comme l'anisotropie de l'interface métal magnétique-oxyde, le transport tunnel et le couplage entre les couches magnétiques à travers la barrière isolante. L'amplitude de l'anisotropie d'interface entre un métal magnétique et un oxyde dépend de l'épaisseur des couches magnétiques, de la température de recuit et la concentration de l'oxygène à l'interface. Différentes structures ont été réalisées afin de choisir la structure la mieux adaptée pour les applications mémoires MRAM. Une corrélation entre la TMR et l'anisotropie a été observée permettant de valider l'origine de l'anisotropie perpendiculaire : la formation de liaisons métal magnétique-oxygène. Un couplage antiferromagnétique à été aussi observé entre les couches magnétiques à anisotropie perpendiculaire à travers l'oxyde. Une étude détaillée sur le couplage a été faite en fonction de la température de recuit et de l'épaisseur des couches magnétiques pour mieux comprendre l'origine du couplage et une possible relation avec l'amplitude de l'anisotropie perpendiculaire. Finalement des jonctions perpendiculaires ont été nano-lithographiées et des mesures de commutation d'aimantation par transfert de spin sur des piliers nanométriques ont été réalisées avec de faibles courants critiques. / The aim of this thesis is the study of magnetic tunnel junctions with perpendicularly magnetized electrodes (pMTJ), using perpendicular magnetic anisotropy (PMA) arising from the magnetic metal/oxide interfaces. For magnetic memories applications, it was predicted in theory that perpendicular junctions should need less energy (current) for spin transfer torque (STT) writing applications. However, the engineering of such structures is a real challenge and a difficult task since simultaneous transport (TMR) and PMA properties impose constraints on materials being used and also limit the working window of the device, especially in terms of magnetic layer thickness. In order to reach our goal we first studied different properties of these structures, such as the origin of PMA from the metal/oxide interface, tunnel transport and interlayer exchange coupling phenomena. The PMA at magnetic metal/oxide interface was showed to strongly depend on different parameters like annealing temperature, oxygen concentration, layer thickness etc. Several pMTJ structures were tested in order to choose the best one for MRAM memories applications. A correlation between TMR and PMA was observed and confirms the PMA origin from the magnetic metal-oxygen bond formation at the interface. Furthermore, antiferromagnetic interlayer exchange coupling was observed in our structures in the presence of out of plane anisotropy. A detailed study was made as a function of annealing temperature and layers thickness, in order to understand the origin of this coupling and its possible relationship to the anisotropy strength. Finally the STT-pMTJ concept was validated and low critical currents were observed on submicronic dots prepared by electron beam lithography.
247

High Accuracy Speed and Angular Position Detection by Dual Sensor

Östling, Johan January 2018 (has links)
For many decades there has been a need in many industries to measure speed and position of ferrous gears. This is commonly done by converting passing gear teeth from trigger wheels to electrical impulses to calculate speed and angular position. By using Hall effect sensors or Giant Magnetoresistance sensors (GMR), a zero speed detection of gear teeth is possible while at the same time be cheap to produce and durable for harsh environments. A specially designed trigger-wheel (cogwheel created for measurements) with gear teeth in a specific pattern, exact position can be detected by using a dual sensor, even when no earlier information is available. The new design of trigger-wheel also makes this new method more accurate and universal compared to previous solutions. This thesis demonstrates and argues for the advantages of using a dual sensor for speed and angular position detection on gear wheels. Were one sensor do quantitative measurements for pattern detection in the teeth arrangements and the other sensor do qualitative measurements for position detection.
248

Metal-insulator transition in perovskite manganite: multilayers and junction. / 錳氧化物的金屬-絶緣體轉變: 多層薄膜及異構結 / Metal-insulator transition in perovskite manganite: multilayers and junction. / Meng yang hua wu de jin shu-jue yuan ti zhuan bian: duo ceng bo mo ji yi gou jie

January 2006 (has links)
by Tsai Yau Moon = 錳氧化物的金屬-絶緣體轉變 : 多層薄膜及異構結 / 蔡友滿. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Tsai Yau Moon = Meng yang hua wu de jin shu-jue yuan ti zhuan bian : duo ceng bo mo ji yi gou jie / Cai Youman. / Abstract / 論文摘要 / Acknowledgements / Table of Contents / List of Figures / List of Tables / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Perovskite-type structure / Chapter 1.2 --- Metal-insulator transition / Chapter 1.3 --- Magnetoresistance / Chapter 1.3.1 --- Giant magnetoresistance (GMR) / Chapter 1.3.2.1 --- Colossal magnetoresistance (CMR) in perovskite manganites / Chapter 1.3.2.2 --- Possible origin of CMR / Chapter 1.4 --- Brief review of p-n junction between perovskite manganites and STON (001) / Chapter 1.5 --- Our project / Chapter 1.6 --- Scope of this thesis work / References / Chapter Chapter 2 --- Preparation and characterization of manganite thin films / Chapter 2.1 --- Thin film deposition / Chapter 2.1.1 --- Facing-target sputtering (FTS) / Chapter 2.1.2 --- Vacuum system / Chapter 2.1.3 --- Deposition procedure / Chapter 2.1.4 --- Deposition conditions / Chapter 2.1.5 --- Oxygen annealing system / Chapter 2.1.6 --- Silver electrode coating system / Chapter 2.2 --- Characterization / Chapter 2.2.1 --- Alpha step profilometer / Chapter 2.2.2 --- X-ray diffraction (XRD) / Chapter 2.2.3 --- Transport property measurement / References / Chapter Chapter 3 --- [LCSMO/PCMO] multilayers / Chapter 3.1 --- [LCSMO (100 A)/PCMO (X A)] multilayers / Chapter 3.1.1 --- Sample preparation / Chapter 3.1.2 --- Results and discussion / Chapter 3.1.2.1 --- Structural analysis / Chapter 3.1.2.2 --- Transport properties / Chapter 3.2 --- [LCSMO (50 A)/PCMO (X A)] multilayers / Chapter 3.2.1 --- Sample preparation / Chapter 3.2.2 --- Results and discussion / Chapter 3.2.2.1 --- Structural analysis / Chapter 3.2.2.2 --- Transport properties / References / Chapter Chapter 4 --- [LSMO/PCMO] multilayers and LSMO/STON p-n junction / Chapter 4.1 --- [LSMO/PCMO] multilayers / Chapter 4.1.1 --- Sample preparation / Chapter 4.1.2 --- Results and discussion / Chapter 4.1.2.1 --- Structural analysis / Chapter 4.1.2.2 --- Magnetization / Chapter 4.2 --- LSMO/STON heterojunction / Chapter 4.2.1 --- Sample preparation / Chapter 4.2.2 --- Results and discussion / Chapter 4.2.2.1 --- Structural analysis / Chapter 4.2.2.2 --- Metal insulator transition of LSMO revealed by four point I-V measurement / Chapter 4.3 --- Conclusion / References / Chapter 5 Conclusion / Chapter 5.1 --- Conclusion / Chapter 5.2 --- Future outlook
249

Preparação e caracterização de manganitas (La,Pr)CaMnO / Preparation and characterization of La,Pr)CaMnO manganites

Masunaga, Sueli Hatsumi 15 April 2005 (has links)
Amostras policristalinas de La(5/8-y)Pr(y)Ca(3/8)MnO(3); 0 y 0.625; foram produzidas pelo método da mistura estequiométrica de óxidos e tratadas termicamente ao ar a 1400 oC. As amostras foram caracterizadas através de medidas de difração de raios-X, resistividade elétrica rho(T), susceptibilidade magnética chi(T) e magnetorresistividade rho(T, H = 50 kOe). Os resultados das análises dos diagramas de raios-X indicaram que os materiais são de fase única e que houve uma substituição efetiva de La por Pr no sítio A ao longo da série. Medidas de rho(T) e chi(T) revelaram que a temperatura de transição de fase metal-isolante TMI e temperatura de Curie TC decrescem com o aumento da concentração y e que a resistividade residual rho0 (rho(T = 10 K)) é consideravelmente alta em amostras com y 0.35. Ainda, com o decréscimo de T, as amostras com y 0.35 transitam para uma fase de ordenamento de carga em TOC ~ 194 K e, em seguida, para uma fase metálica em TMI. Essas medidas também sugerem a coexistência de fases ferromagnética-metálica FMM e de ordenamento de carga isolante OCI nesses materiais. Nas propriedades físicas macroscópicas, a fase FMM mostrou ser a dominante para os compostos com pequenas concentrações de Pr (y 0.25) e a fase OCI dominante para os compostos com altas concentrações de Pr (y 0.40). As medidas de rho(T, H = 50 kOe) mostram que a magnitude da resistividade elétrica decresce drasticamente nas vizinhanças de TMI sob a aplicação de um campo magnético externo. A magnitude de MR (MR = (rho(H = 0)-rho(H = 50 kOe))/rho(H = 50 kOe)) entre os extremos da série (y = 0 e 0.625) varia até sete ordens de grandeza, sendo que o máximo valor de MR para amostras com y = 0 é de ~ 0.75 e naquelas com y = 0.625 é ~ 3.4x106 . O diagrama de fases deste composto evidencia uma região crítica (0.30 y 0.40) onde os valores de TMI, TC, MR e 0 variam abruptamente como função de y, sendo que em outras regiões tal variação é mais suave. A variação significativa desses quatro valores indica uma competição mais forte entre as fases coexistentes ocorre na região crítica. Algumas características marcantes podem ser observadas nas amostras da região crítica tais como: a presença de um segundo pico, abaixo de TMI, em ~ 90 K e ~ 72 K na curva de rho(T) de amostras com y = 0.30 e 0.35, histerese térmica mais pronunciada em rho(T) e chi(T), MR torna-se colossal, relaxação significativa da resistividade elétrica com o tempo, entre outras. Assim, as propriedades de transporte e magnéticas nessa região crítica são dominadas pela forte competição entre as fases coexistentes. / Polycrystalline samples of La(5/8-y)Pr(y)Ca(3/8)MnO(3); 0 y 0.625; were synthesized by the solid-state reaction method and sintered in air at 1400 oC. These compounds were studied by measurements of X-ray powder diffraction, magnetic susceptibility chi(T), and electrical resistivity rho(T, H). X-ray powder diffraction measurements indicated single phase materials and an effective substitution of La by Pr. Results from rho(T) and chi(T) revealed that increasing y in this series results in a rapid reduction of both the insulator to metal transition temperature TMI and the Curie temperature TC. Such a rapid decrease in TMI with increasing y is also accompanied by the occurrence of a new transition temperature, termed TCO, which is related to the transition to the charge ordered CO state. Such a temperature, which is essentially independent of y, occurs at TCO ~ 194 K and is mainly observed in samples with y 0.35. The other feature is the presence of a large residual resistivity electrical rho(0 = (10 K)) for large y (y 0.35) at low-T even though rho(T) suggests a metallic behavior below TMI. The temperature for the maximum magnetoresistance effect occurs near TMI, that shifts to higher T with increasing field. The MR is defined here as (rho(H = 0)-rho(H = 50 kOe))/rho(H = 50 kOe) and is enhanced by seven orders of magnitude from ~ 0.75 up to ~ 3.4x106 in samples with y = 0 and y = 0.625, respectively. Some features like the thermal hysteresis observed in both rho(T) and chi(T) curves indicate the coexistence of different phases in a range of y concentration, i. e., the ferromagnetic-metallic FMM and the charge ordered-insulating COI domains. The FMM is stable for y 0.25, but the COI state becomes dominant for y 0.40. There is a critical region in the phase diagram, ranging from y = 0.30 to 0.40, where the magnitude of the TMI, TC, MR, and 0 were found to display abrupt changes with increasing y. Some anomalous features like a second peak in rho(T) below TMI, a two-step increasing in chi(T), a colossal MR effect and others are observed for compositions belonging to this critical region. Our combined data suggest that the general physical properties of these compounds in such a critical region are dominated by the strong competition between coexisting ferromagnetic-metallic and charge ordered-insulating phases.
250

Synthesis, Nuclear Structure, and Magnetic Properties of some Perovskite Oxides

Tseggai, Mehreteab January 2005 (has links)
Synthesis, nuclear structure, and magnetic properties of the perovskites: Nd0.7-xMgxSr0.3MnO3 (x=0.0, 0.1), Nd0.6Mg0.1Sr0.3Mn1-zMgzO3 (z=0.1, 0.2), LaCr1-yMnyO3 (y=0.0, 0.1, 0.2, 0.3) and La1-xNdxFe0.5Cr0.5O3 (x=0.1, 0.15, 0.2) have been studied. The structure of the samples was investigated by X-ray and Neutron powder diffraction and the magnetic properties were investigated by magnetization measurements using SQUID-magnetometry. All compounds have orthorhombic structure with spacegroup Pnma (No. 62). The compounds which had the composition Nd0.7Sr0.3Mn1-yMgyO3 by preparation, were found to attain the composition Nd0.7-xMgxSr0.3MnO3 and Nd0.6Mg0.1Sr0.3Mn1-zMgzO3. The x=0.0 and 0.1 compounds order in a pure ferromagnetic structure at about 200 K, but the Mn moments become slightly tilted and attain an antiferromagnetic component below 20 K. A ferromagnetic Nd moment also appears at low temperatures. The compounds with Mg substitution y=0.2 and 0.3 do not exhibit long range magnetic order, but local ferromagnetic correlations among the Mn moments appear below 200 K. At low temperature, also a local antiferromagnetic ordering of the Nd magnetic moments occurs. In these compounds, the Mn3+/Mn4+ ratio is reduced so that the double exchange interaction is suppressed and the antiferromagnetic superexchange interaction favoured. The samples of composition LaCr1-yMnyO3 have orthorhombic structure at room temperature and below. The magnetic properties of the system are markedly affected by Mn-substitution. The parent compound LaCrO3 is a pure G-type antiferromagnet with Néel temperature 290 K. With incresing Mn-substitution, a ferromagnetic component developes in the ordered phase bcause of canting of the magnetic moments. The degree of canting increases with increasing Mn-substitution and the magnitude of the antiferromagnetic component of the moment decreases. The system La1-xNdxFe0.5Cr0.5O3 has the same antiferromagnetic G-type structure as LaCrO3, but orders already at temperatures above 400 K and develops only a very weak ferromagnetic component of the magnetic moment at low temperatures.

Page generated in 0.0926 seconds