The main aim of this work was to investigate electrical conductivity of La-Ca(Sr)-MnO thin films at high pulsed electric and magnetic fields and to clear up the possibilities to use these materials for high pulsed magnetic field sensor and fault current limiter applications.

The development of rails and armatures which ensure a sliding solid-to-solid contact during the whole projectile acceleration is a great challenge in the field of railgun technology. Multifaceted physics exists at the sliding contact interface: The current concentrates at the rear of the interface due to magnetic diffusion processes and the fast armature movement. Consequently, Joule heating leads to enhanced wear in this region. In this dissertation, magnetic diffusion in railguns is investigated by means of measuring magnetic fields with CMR-B-scalar sensors at static and dynamic experimental conditions. These novel sensors, based on La0.83Sr0.17MnO3 thin films exhibiting colossal magnetoresistance were adapted for the use at railguns. It was found that these sensors are effective tools to measure the magnitude of high pulsed magnetic fields independent of the field orientation. Magnetic field distributions influenced by proximity and velocity skin effect could be measured in the harsh railgun environment. The obtained results allowed to estimate the skin depth in the rails at the sliding interface of a fast moving armature (>1500m/s). Furthermore experiments with fixed multiple brush armatures showed that front brushes can have contact problems in case of missing contact pressure. / Pagrindiniai bėgių tipo elektromagnetinių svaidyklių technologijos uždaviniai yra susiję su daugybe fizikinių reikinių, vykstančių sviedinio kontaktų sąlyčio su bėgiais riboje. Todėl elektromagnetinių procesų, atsirandančių dėl didelių elektros srovės tankių ir slydimo greičių tyrimas yra svarbus šios srities uždavinys. Dėl magnetinės difuzijos ir greito sviedinio judėjimo, srovė koncentruojasi galinėje kontakto dalyje, kuri dėl stipraus Joule šilimo greitai susidėvi, o tai apriboja svaidyklės efektyvumą. Disertacijoje pateikiami magnetinio lauko difuzijos tyrimai bėgių tipo svaidyklėse panaudojant specialius jutiklius magnetinių laukų matavimui. Šie nauji jutikliai, pagaminti iš plonų La0,83Sr0,17MnO3 sluoksnių, pasižyminčių milžiniškos magnetovaržos (MM) reiškiniu (MM-B-skaliariniai jutikliai), buvo pritaikyti svaidyklėse, veikiančiose statiniame ir dinaminiame režime, esant dideliems elektromagnetinių triukšmų lygiams ir mechaniniams įtempiams. Darbo metu buvo nustatyta, jog šiais jutikliais galima išmatuoti stipraus magnetinio lauko impulso amplitudę, kai nėra žinoma šių laukų kryptis. Buvo ištirti nevienalyčių magnetinių laukų pasiskirstymai bėgiuose, atsirandantys dėl artumo efekto bei greičio skinefekto, sviediniui judant greičiau nei 1500m/s. Bandymai su įtvirtintu daugelio šepetėlių konstrukcijos sviediniu parodė, kad priekiniai šepetėliai, dėl nepakankamo Lorenco jėgos sukuriamo slėgio, gali pararasti elektrinį kontaktą su bėgiais.

The aim of this thesis is to perform Magnetic Resonance Imaging at very low field (from 1 mT to 10 mT). A new kind of sensor called "mixed sensor" has been used to achieve a good detectivity at low frequencies. Combining a superconducting loop and a giant magnetoresistance, those detectors have a competitive equivalent field noise compared to existing devices (Tuned coils, SQUIDs and Atomic Magnetometers). They have been combined with flux transformers to increase the coupling between the sample and the sensor. A complete study has been performed to adapt it to mixed sensors and then maximize the gain. This set has been incorporated in an existing small MRI device to test its robustness in real conditions. In parallel, several MRI sequences (GE, SE, FLASH, EPI, ...) have been integrated and adapted to very low field requirements. They have been used to perform in-vivo three dimensional imaging and relaxometry studies on well known products to test their reliability. Finally, a larger setup adapted for full-head imaging has been designed and built to perform images on a larger working volume.

The aim of this thesis titled "Zeolites as key-components for electronics and biomedicine" is the synthesis, functionalization and applications of zeolite-L particles for applications in electronics and biomedicine. This thesis is organized into 8 chapters, starting in chapter 1 with giving a general overview about nanotechnology and biomedicine. After that the concept of using nanocontainer in biomedicine are briefly discussed. In the following the nanocontainer zeolite-L is introduced and a summary of zeolite- L for applications in nanomedicine is given. Finally, the self-assembly of zeolites in monolayers and their further functionalization is discussed. Chapter 2 describes the zeolite-L synthesis, functionalization and their assembly into functional materials in detail. Three different types of zeolite-L have been used in this thesis: Nanozeolite-L particles with a size of just a few tenths of nanometers, disc-shaped zeolite-L with a diameter of around 200 nm and micrometer sized crystals with a length of about 1000 nm. Then different methods to functionalize the crystals with the desired groups and to obtain specific properties of the crystals are reported. In detail, the exchange with different counter cations, the insertion of guest molecules and the functionalization of the external crystal surface are reported. Finally the assembly into monolayers and their further functionalization by soft lithography is discussed. [...]

In recent years, the interest for miniaturization of spaceborne instruments and subsystems has increased steadily, as this enables development of small and lightweight satellite classes as well as more versatile payloads on traditional spacecraft. In essence, this thesis work is an investigation of the applicability of magnetoresistive technology to a magnetometer intended for space. Two types of magnetoresistive sensors, promising with respect to performance competiveness also after considerable miniaturization, were developed and evaluated, namely magnetic tunnel junctions and planar Hall effect bridge sensors. In the case of the magnetic tunnel junctions, much effort was put on the micromanufacturing process. Two schemes were developed and evaluated for sensor contouring: one employing focused ion beam processes for rapid prototyping, and the other combining sputtering and x-ray photoelectron spectroscopy for precise etch depth monitoring during ion etching. For the former, the resulting implantation damages were investigated with chemical analysis and correlated to the sensor properties. In the latter, the depth of the etching was monitored live with a resolution sufficient to stop the etching in the 1 nm thick tunneling barrier. The effect and extent of redeposition were investigated by transmission electron microscopy and micromagnetic analysis. With the knowledge so gained, the tunneling magnetoresistance of the manufactured junctions could be improved significantly and their inherent noise could be reduced. As a step in space flight qualification, the magnetic tunnel junctions were subjected to both g and particle radiation, leaving them unaffected by the first, but rendering them a reduced tunneling magnetoresistance ratio and an increased coercivity by the latter. In the case of the planar Hall effect bridge sensors, their inherent noise was thoroughly investigated, revealing both electric and magnetic 1/f noise at low frequencies along with thermal noise at higher frequencies. In addition, an analytical model of the magnetic properties of the planar Hall effect bridges was developed, and a design process, based on the model, was established to optimize the bridges for a particular application. In conclusion, both types of sensors show great promises for use in space. Of the two, the planar Hall effect bridge sensors had a better detection limit at low frequencies, whereas the magnetic tunnel junctions were more precise at higher frequencies. However, both sensors had a bandwidth greatly exceeding that of traditional spaceborne magnetometers. A magnetometer employing the magnetic tunnel junctions from this work is currently included as payload onboard the Vietnamese satellite F-1 scheduled for launch this year. A magnetometer using magnetoresistive sensors – planar Hall effect sensors, magnetic tunnel junctions, or both – enables a mass reduction of more than two orders of magnitudes compared with traditional systems.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Anisotropic magnetoresistance (AMR) corresponds to the change of R in an ferromagnetic material with the angle between electric current and magnetization. Sensors using this effect are suited to detect both angular and linear displacements. In this work, structural, magnetic and electric characterization were performed in order to study the exchange interaction between antiferromagnetic IrMn and ferromagnetic NiFe, in a bilayer and a multilayer. Simulations of the AMR measurements were performed and showed good agreement with the experimental data. Different anisotropy field values were observed. The difference between the anisotropy field and the exchange field values is responsible for the different AMR data sets extracted from each sample. The model takes into account the, anisotropy (uniaxial), Zeeman, and exchange-bias (unidirectional) energies was used to explain the observed behavior. / Magnetorresistência anisotrópica (AMR) consiste na variação da resistência de um material ferromagnético em função do ângulo entre a corrente elétrica e a magnetização do material, o que faz com que sensores que utilizam este efeito sejam promissores para medidas de posição tanto angulares quanto lineares. Neste trabalho, caracterização estrutural, magnética e elétrica foram realizadas para estudar a interação de troca entre camadas antiferromagnética de IrMn e ferromagnética de NiFe em uma bicamada e uma multicamada. Simulações das medidas de AMR foram realizadas e boa concordância entre os dados experimentais e os simulados foi obtida. Diferentes valores de campos de anisotropias foram observados. A diferença entre o campo de anisotropia unidirecional e o campo de exchange é responsável pela diferença entre as medidas de AMR obtidas. Um modelo que considera as energias de anisotropia (uniaxial), Zeeman e de exchangebias (unidirecional) foi usado para explicar o comportamento observado.

Dans cette thèse de doctorat nous présentons une étude théorique de deux types d'instabilitésferroélectriques: celles apparaissant dans des géométries confinés et celles induites par le magnétismedans dans composés massifs de structure perovskite. Dans une première partie nous abordons leproblème des instabilités ferroélectriques apparaissant dans des nanotubes et des nanocoquillesoù nous développons un modèle théorique phénoménologique approprié à ces structures. Nousétudions comment l'émergence de la polarisation est affectée par (i) l'épaisseur des nanostructures,(ii) par la réponse diélectrique des matériaux environant la couche ferroélectrique et (iii) les conditionsaux interfaces. Nous observons un effet de taille finie topologique qui peut promouvoirune compétition inhabituelle entre deux types de distribution de la polarization, irrotationel eten vortex, dans la limite des très petites épaisseurs. Dans une deuxième partie nous utilisons descalculs ab-initio à base de la théorie de la fonctionnelle de la densité pour étudier les instabilitésferroélectriques des perovskites manganites à base de terres rares (RMnO3). A partir de ces calculsnous prédisons qu'il est possible d'induire une transition de phase sous pression dans EuMnO3 lefaisant transiter d'un ordre antiferromagnétique de type A isolant vers un ordre ferromagnétiquemétallique sous pression. Ce type de transition n'avait jamais été reporté précédemment dans lesmatériaux RMnO3. Nous étendons ensuite cette analyse à l'étude des effets de strain épitaxial dansles films minces de TbMnO3 et EuMnO3. Nos résultats montrent que le diagramme de phase souscontrainte d'épitaxie est bien plus riche que celui sous pression hydrostatique. Nous trouvons queles types antiferromagnétiques E-AFM et E*-AFM sont stabilisés dans le cas de TbMnO3, où letype E*-AFM est une phase métallique polaire. Dans le cas de EuMnO3, nous trouvons une phaseantiferromagnétique de type E qui n'a pas été observée sous pression hydrostatique. / In this thesis, we present a theoretical study of two types of ferroic instabilities: the ferroelectric instability in novel confined geometries and magnetic instabilities controlled by the distortion of the underlying crystal lattice. On the one hand, we consider in detail the ferroelectric instability, specifically, in the nanotubes and the spherical nanoshells and develop a phenomenological theory for describing such an instability. We determine how the emergence of polarization is affected bythe thickness of the nanoparticle, the dielectric properties of the surrounding media and the interfacial boundary conditions. We finnd an intriguing topological finite-size effect that can promote an unexpected competition between two different types of distribution of polarization - irrotational and vortex-like - in the ultra-thin limit. One the other hand, we employ a different formalism to investigate the structural, electronic and magnetic properties of the rare-earth manganites. Specifically,we conduct a theoretical investigation from first-principles calculations. First, we predict a pressure-induced A-AFM insulator to FM metal transition on EuMnO3 under hydrostatic pressure, that is unprecedented in the multiferroic rare-earth manganites RMnO3. This investigation is extended to the study to the epitaxial strain effects on both EuMnO3 and TbMnO3 thin films. We show that epitaxial strain generates a much richer phase diagram compared to hydrostatic pressure. We predict novel magnetically-induced insulator { metal and polar { non-polar transitions. More specifically, we find that both the multiferroic E-AFM order and the polar metallic E*-AFM state are stabilized in TbMnO3 by means of epitaxial strain. In the contrast, we find a novel epitaxial-strain-induced multiferroic E-AFM state in EuMnO3 that cannot be obtained by means of just hydrostatic pressure.

Ce travail de thèse porte sur l'élaboration et la caractérisation de jonctions tunnel magnétiques (JTM) polycristallines à barrière d'oxyde de titane de strontium, SrTiO3, qui se situe parmi les nouvelles barrières tunnel aux bandes interdites les plus étroites, recensées par la littérature. De telles barrières pourraient répondre à un besoin applicatif crucial : avoir un produit résistance x surface, RA, plus faible dans les JTM, ou à son corollaire, avoir une épaisseur de barrière plus forte à RA égal tout en conservant une magnétorésistance tunnel, TMR, élevée. De précédents travaux ont montré que le SrTiO3 présente une température de cristallisation inhabituellement basse (< 400°C) lorsqu'il est déposé par pulvérisation par faisceau d'ions (IBS) ce qui peut le rendre compatible avec les électrodes magnétiques standards constitutives des JTM. Le dépôt par IBS restant une technique pour le moins exotique au regard de l'état de l'art des JTM, nous avons dans un premier temps élaboré des JTM à barrière d'oxyde de magnésium, MgO, matériau phare de la spintronique. Cette étude a permis de mettre en avant les paramètres spécifiques à cette technique de dépôt influant sur les propriétés de transport des JTM, notamment le type d'oxydation. Dans un second temps, nous avons réalisé des JTM CoFeB/SrTiO3/CoFeB par IBS à partir d'une cible céramique de SrTiO3, en nous inspirant du travail effectué sur le MgO. Les influences de plusieurs paramètres de dépôt, d'oxydation et de recuit ont été analysées, conduisant à deux tendances opposées avec des systèmes présentant soit à une TMR élevée (18 %), soit un RA faible (2.6 Ohm.µm²). Des JTM SrTiO3 ont ensuite été nanostructurées pour la première fois et les tests électriques ont montré que les JTM ayant un bas RA présentaient un comportement ohmique alors que celles ayant une TMR élevée présentaient le comportement tunnel attendu. De plus, ces dernières présentent un claquage diélectrique intrinsèque à l'oxyde. En parallèle, des études microstructurales ont montré une qualité morphologique des JTM SrTiO3 semblable à celle des JTM MgO à l'état de l'art. Toutefois, ces observations n'ont pas permis de statuer sur le caractère cristallisé ou non des barrières en SrTiO3. Plusieurs pistes visant à déterminer la température de cristallisation du SrTiO3 dans la gamme des épaisseurs extraordinairement faibles des barrières tunnel ont été proposées. / This work is focused on the development and the characterization of polycrystalline magnetic tunnel junctions (MTJ) with strontium titanium oxide barrier, SrTiO3, identified as a low band gap tunnel barrier by literature. Such barrier could fulfill the critical application requirement: having a lower resistance area product (RA) in MTJ, or its corollary, having a thicker barrier at constant RA, while keeping the tunnel magnetoresistance ratio (TMR) high enough. Former studies have shown that SrTiO3 deposited by ion beam sputtering (IBS) could crystallize at an unusual low temperature (< 400°C) which could make it compatible with the magnetic layers of MTJs. In a first place, MTJs with a tunnel barrier made of a well known material in spintronics, namely MgO, were deposited. This preliminary work allowed us to highlight the specific parameters affecting the transport properties in MTJs deposited by IBS, including the oxidation type. In a second place, CoFeB/SrTiO3/CoFeB MTJs were developed using IBS and a SrTiO3 ceramic target, learning from our experience on MgO based MTJs. Many combinations of different parameters (including deposition, oxidation and annealing parameters) were explored, leading to two opposite tendencies with systems having either a high TMR (up to 18 %) or a low RA (down to 2.6 Ohm.µm²). SrTiO3 based MTJs were then patterned for the first time and submitted to electrical tests. These tests showed that the MTJs having a low RA exhibited an ohmic behaviour while the MTJs having a large TMR showed the expected tunnel characteristics. Furthermore, the latter MTJs showed an intrinsic dielectric breakdown. In parallel, microstructural characterizations have shown that SrTiO3 based MTJs and MgO based MTJ were alike morphologically. Nevertheless, these observations alone were not enough to assess on the crystalline state of SrTiO3. Many possibilities/tracks aiming at determining the crystallisation temperature of SrTiO3, in the range of extremely low thicknesses used in MTJs, are identified.

In this work, we analyzed samples of thin films Ni81Fe19 and Pd with ZnO spacer. Ni81Fe19 is a ferromagnet with a low saturation magnetic field. Pd is a normal metal with high spinorbit coupling, much used in spin Hall effect and inverse spin Hall effect studies. ZnO is a semiconductor whose role is to reduce the charge current between layers. The sample have 5 nm of Ni81Fe19, 3 nm of Pd, and 2 nm of ZnO, with dimensions of 0.4 mm x 8 mm, deposited by magnetron sputtering. Using spin pumping we analyze the signal of the continuous voltage induced by ferromagnetic resonance. These samples the measured signal is a consequence of anisotropic magnetoresistance, anomalous Hall effect and inverse spin Hall effect. The thicknesses used contributes to a predominant inverse spin Hall effect signal. The ZnO spacer layer 2 nm reduces the effects of spin rectification, while maintaining spin current transfer. / Neste trabalho analisamos amostras de filmes finos de Ni81Fe19 e Pd separados por ZnO. O Ni81Fe19 foi escolhido por ser um ferromagneto com baixo campo magnético de saturação. O Pd é um metal normal com alto acoplamento spin-órbita, muito usado em estudos de efeito Hall de spin e efeito Hall de spin inverso. O ZnO é um semicondutor com o papel de diminuir a transferência de corrente de carga entre as camadas. As amostras tem espessura de 5 nm de Ni81Fe19, 3 nm de Pd e 2 nm de ZnO, com dimensões de 0,4 mm x 8 mm, depositadas por magnetron sputtering. Através da técnica de spin pumping analisamos o sinal de tensão contínua induzida por ressonância ferromagnética. Nestas amostras o sinal medido é consequência de efeitos de magnetorresistência anisotrópica, efeito Hall anômalo e efeito Hall de spin inverso. As espessuras utilizadas permitem um sinal de efeito Hall de spin inverso predominante. A camada espaçadora de 2nm de ZnO reduz os efeitos de retificação de spin, mantendo a transferência de corrente de spin.

[pt] Amperímetros convencionais devem ser inseridos em série com o elemento no qual se deseja medir a corrente, constituindo uma forma de medição invasiva. Amperímetros alicate, baseados em bobinas, realizam medições de forma não invasiva, mas são limitados a correntes alternadas. Para medição de correntes contínuas, amperímetros baseados no efeito Hall são utilizados, mas possuem baixo nível de tensões de saída e pouca estabilidade em relação à temperatura. O objetivo desta dissertação foi desenvolver um protótipo de amperímetro baseado em magnetômetros de magnetorresistência gigante (GMR) capaz de medir correntes contínuas, de forma não invasiva e com alta resolução em relação aos amperímetros alicate. A metodologia dividiu-se em: (i) utilização de dois magnetômetros GMR para medir o campo magnético gerado pela corrente elétrica em um condutor; (ii) projeto e implementação de um solenoide para polarizar os sensores na faixa de operação linear; (iii) aprimoramento e desenvolvimento de circuitos eletrônicos dedicados à excitação e leitura dos GMRs; (iv) implementação de algoritmos para solução do problema inverso, isto é, a partir da saída do circuito, em mV, estimar a corrente que passa pelo condutor e a distância entre este e o amperímetro. Foram realizados 60 testes, com correntes variando de -3 A a 3 A, com passos de 0,1 A. O protótipo foi capaz de estimar a corrente elétrica com incerteza expandida, do tipo A, de 0,091 A e 0,07 cm para a distância. Os resultados comprovam a viabilidade da realização de medições de corrente, por aproximação, utilizando sensores GMR. / [en] Conventional ammeters should be inserted in series with the element in which the current is to be measured, thus constituting an invasive measurement form. Clamp ammeters, based on coils, are able to measure non-invasively but are limited to alternating currents. For measurement of direct currents, Hall-based ammeters are used, but have low output voltages and little temperature stability. Thus, the objective of this dissertation was to develop a prototype based on giant magnetoresistance (GMR) magnetometers capable of measuring direct currents, non-invasively and with high resolution in relation to clamp ammeters. The methodology was divided into: (i) the use of two GMR magnetometers to measure the magnetic field generated by the electric current in a conductor; (ii) design and implementation of a solenoid to polarize the sensors in the linear operating range; (iii) improvement and development of electronic circuits dedicated to the excitation and reading the GMRs; (iv) implementation of algorithms to solve the inverse problem, that is, from the outputs of the circuit, in mV, estimate the current passing through the conductor and the distance between it and the ammeter. Sixty tests were performed, with currents varying from -3 A to 3 A, with steps of 0.1 A. The prototype was able to estimate the electrical current with type A expanded uncertainty of 0.091 A and 0.07 cm for the distance. The results demonstrate the feasibility of conducting current measurements by approximation using GMR sensors.