<p> A study of the Fermi surface of mercury has been carried out using cyclotron resonance and magnetoresistance techniques. Oscillations of the microwave surface impedance, which have been identified as quantum oscillations, have appeared at high magnetic field strengths, and a study of these oscillations has added more information about the Fermi surface. </p> <p> The results of these experiments are compared with two models of the Fermi surface, the nearly-free-electron model, and the relativistic-augmented-plane-wave model. The relativistic-augmented-plane-wave model was found to require only small modifications to be consistent with the data. </p> / Thesis / Doctor of Philosophy (PhD)

No description available.

In the next decade, technology trends--smaller dimension, lower voltage, higher operating frequency--introduce new technical considerations and challenges for radiation effects in integrated circuits. Semiconductor based circuits and traditional dynamic random-access memories will malfunction when exposed to extreme environments, such as space and nuclear reactor. The mechanisms for radiation effect are mainly attributed to the radiation-induced charging of the oxide in a CMOS device. Spintronics is an emerging area of nanoscale electronics involving the detection and manipulation of electron spin. The magnetic tunnel junctions (MTJs), based on the intrinsic spin of the electron, can be used as the storage elements in non-volatile magnetoresistive random-access memories (MRAMs). In this effort, we study radiation tolerance of MTJs by exposing the devices in gamma and neutron radiation environment. Theoretical model for the radiation-induced defects is analyzed in this work. Experiments of the MgO-based MTJs under the conditions of pre- and post-radiation are concluded. MTJs were irradiated with gamma ray to a total dose of 10 Mrad. During the neutron irradiation, total epithermal neutron fluence up to 2.9��10�����/cm�� was obtained. The experimental results show that neither the electrical nor the magnetic properties of MTJs are affected by the radiation. / Graduation date: 2013 / Access restricted to OSU community at author's request from Sept. 11, 2012 - Sept. 11, 2014

Ce manuscrit est basé sur l'étude de l'interaction entre des purs courants de spin et parois de domaines magnétiques. Cet étude a été divisée en quatre parties. Dans la première partie, nous avons donné une explication détaillée du transport de spin dans des nano structure métalliques en utilisant trois approches différentes. La deuxième partie est focalisée sur l'utilisation d'un pur courant de spin pour induire le mouvement d'un paroi de domaine. Dans la troisième et quatrième partie nous avons mis en évidence deux nouvelle techniques d'injection et détection de spin en utilisant des parois des domaines magnétiques. / This thesis is based on the study of the interplay between pure spin currents and magnetic domains walls. This study has been divided in four chapters. In the first part, we provides a detailed explanation of the spin-transport in metallic structures by using three approaches. The second chapter concerns to the use of pure spin currents to induce DW motion in lateral spin valves. The third and four chapter, is mainly focused on the use of DWs for the efficient injection and detection of pure spin currents in lateral spin valves and cross shaped geometries.

No description available.

No description available.

The scattering mechanisms responsible for Giant Magneto-Resistance (OMR) in magnetic multilayers are believed to be related to many aspects of the multilayer structure. X-ray scattering techniques provide a powerful method with which to study the bulk and interface morphology in these systems, and are therefore crucial in developing an understanding of the dominant factors influencing the magnitude of the OMR. Reflectivity measurements performed on a series of Co/Cu multilayers, sputter deposited onto etched silicon, reveal no variation in the interface roughness with etching voltage, the thickness of the individual layers also remaining constant. The observed decrease in the OMR cannot, therefore, be attributed to variations in spacer thickness or interfacial spin-independent scattering. Electron and X-ray Diffraction measurements suggest the reduction in GMR is due to a loss of antiferromagnetic coupling associated with a transformation of the texture from a randomly oriented to well oriented (111) polycrystalline texture, and subsequent reduction in the volume fraction of (100) oriented grains. Interfaces within Co/Cu are found to propagate with a high degree of conformality with increasing bilayer number, with an out-of-plane correlation length well in excess of 300Å. In contrast, the Co/Pt system exhibits a limiting out-of-plane correlation length of the order of 350Å arising from a columnar growth mode. X-ray Reflectivity and Diffraction measurements provide no structural interpretation for the 3-fold enhancement in the rate of increase of the saturation conductivity, as a function of spacer thickness, in Fe/Au (100) compared to Fe/Au (111), or why large oscillations in the GMR occur for the (100) orientation only. Such observations are, however, consistent with the existence of a channelling mechanism in Fe/Au (100). Grazing Incidence Fluorescence data indicates that Nb acts as a surfactant in Fe/Au (111) growth on sapphire. The influence of different defect types within multilayers has also been observed.

Thesis advisor: Michael J. Naughton / Quasi-one dimensional (Q1D) molecular organic conductors are among the most exciting materials in condensed matter physics, exhibiting nearly every known ground state. They are highly anisotropic, structurally and electronically, and show large oscillatory phenomena in conductivity for magnetic field rotated in different crystalline planes. Several theoretical works have been published to explain these angular magnetoresistance oscillation (AMRO) effects, but the underlying physics remains illunderstood. Here, we present measurements and calculations of magnetotransport in the molecular organic (super)conductor (DMET)₂I₃ which detect and simulate all known AMRO phenomena for Q1D systems. Employing, for the first time, the true triclinic crystal structure in the calculations, these results address the mystery of the putative vanishing of the primary AMRO phenomenon, the Lebed magic angle effect, for orientations in which it is expected to be strongest. They also show a common origin for Lebed and so-called "Lee-Naughton" oscillations, and confirm the generalized nature of AMRO in Q1D systems. Furthermore, we report the temperature dependence of the upper critical magnetic field in (DMET)₂I₃, for magnetic field applied along the intrachain, interchain, and interplane directions. The upper critical field exhibits orbital saturation at low temperature for field in all directions, implying that superconductivity in (DMET)₂I₃ is conventional spin singlet. / Thesis (PhD) — Boston College, 2010. / Submitted to: Boston College. Graduate School of Arts and Sciences. / Discipline: Physics.

by Lo Wai Hung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Lo Wai Hung. / Acknowledgements --- p.1 / Abstract / 論文摘要 --- p.ii / Table of Contents --- p.iv / List of Figures --- p.vi / List of Tables --- p.viii / Chapter Chapter 1. --- Introduction / Chapter 1.1. --- Magnetoresistance --- p.1 -1 / Chapter 1.1.1. --- Giant magnetoresistance (GMR) --- p.1 -2 / Chapter 1.1.2. --- Colossal Magnetoresistace (CMR) --- p.1 -2 / Chapter 1.2. --- Doping effects in La1-xCaxMn03 --- p.1-4 / Chapter 1.3. --- Metal-Insulator transition in CMR materials --- p.1 -8 / Chapter 1.3.1. --- The sharpness in Metal-Insulator transition --- p.1 -9 / Chapter 1.3.2. --- Possible model to explain CMR in rare-earth manganites --- p.1-12 / Chapter 1.4. --- Low field magnetoresistance --- p.1-14 / Chapter 1.4.1.1. --- Single crystal and polycrystalline perovskite manganites --- p.1-14 / Chapter 1.4.1.2. --- Manganite trilayer junctions --- p.1-15 / Chapter 1.4.2. --- Possible mechanism of low field MR --- p.1-16 / Chapter 1.5. --- Our motivation --- p.1-17 / Chapter 1.5.1. --- Brief review of several manganite superlattices systems --- p.1-18 / Chapter 1.5.2. --- Scope of this thesis work --- p.1-20 / References --- p.1-21 / Chapter Chapter 2. --- Epitaxial growth of LCMO thin films / Chapter 2.1. --- Deposition techniques --- p.2-1 / Chapter 2.1.1. --- Induction --- p.2-1 / Chapter 2.1.2. --- Facing-target sputtering (FTS) --- p.2-1 / Chapter 2.1.3. --- Vacuum system --- p.2-3 / Chapter 2.2. --- Fabrication and characterization of LCMO and PCMO targets --- p.2-4 / Chapter 2.3. --- Epitaxial growth of LCMO thin films --- p.2-9 / Chapter 2.3.1. --- Substrate materials --- p.2-9 / Chapter 2.3.2 --- Deposition --- p.2-10 / Chapter 2.3.2.1. --- Sample preparation --- p.2-10 / Chapter 2.3.2.2. --- Deposition procedure --- p.2-10 / Chapter 2.3.2.3. --- Inter-target distance --- p.2-11 / Chapter 2.3.2.4. --- Deposition Rate --- p.2-15 / Chapter 2.4. --- Substrate temperature effect --- p.2-17 / Chapter 2.4.1. --- Crystal Structure --- p.2-17 / Chapter 2.4.2. --- Transport properties --- p.2-20 / Chapter 2.4.2.1. --- Sharpness of M-I transport properties --- p.2-24 / Chapter 2.4.2.2. --- Magnetoresistance of LCMO/NGO films --- p.2-27 / Chapter 2.5. --- Thickness of LCMO thin film --- p.2-28 / Chapter 2.5.1. --- Crystal Structure --- p.2-29 / Chapter 2.5.2. --- M-I transition properties --- p.2-31 / Chapter 2.5.2.1. --- Sharpness of M-I transport properties --- p.2-35 / Chapter 2.5.2.2. --- Magnetoresistance of LCMO/NGO films --- p.2-36 / Chapter 2.5.2.3. --- Surface Morphology --- p.2-38 / Chapter 2.6. --- Epitaxial growth of PCMO thin films --- p.2-40 / Chapter 2.7. --- Conclusion --- p.2-42 / References --- p.2-43 / Chapter Chapter 3. --- LCMO/PCMO superlattices --- p.3-1 / Chapter 3.1. --- Variation of the PCMO thickness in LCMO/PCMO superlattices --- p.3-2 / Chapter 3.1.1. --- Sample Preparation --- p.3-2 / Chapter 3.1.2. --- Structure characterization by XRD --- p.3-3 / Chapter 3.1.3. --- Transport properties --- p.3-10 / Chapter 3.1.3.1. --- Sharpness of M-I transport properties --- p.3-14 / Chapter 3.1.3.2. --- Magnetoresistance of LCMO/PCMO superlattices --- p.3-16 / Chapter 3.2. --- Variation of the number of LCMO/PCMO bilayer --- p.3-19 / Chapter 3.2.1. --- Sample Preparation --- p.3-19 / Chapter 3.2.2. --- Structure characterization by XRD --- p.3-21 / Chapter 3.2.3. --- Transport properties --- p.3-23 / Chapter 3.2.3.1. --- Sharpness of M-I transport properties --- p.3-27 / Chapter 3.2.3.2. --- Magnetoresistance of LCMO/PCMO superlattices --- p.3-28 / Chapter 3.3. --- Fine adjusting the thickness of PCMO around 10Ain LCMO/PCMO superlattices / Chapter 3.3.1. --- Sample Preparation --- p.3-31 / Chapter 3.3.2. --- Characterization ofLCMO/PCMO superlattices by XRD --- p.3-32 / Chapter 3.3.3. --- Transport properties --- p.3-35 / Chapter 3.3.3.1. --- Sharpness of M-I transport properties --- p.3-39 / Chapter 3.3.3.2. --- Magnetoresistance of LCMO/PCMO superlattices --- p.3-41 / Chapter 3.4. --- Conclusion --- p.3-43 / References --- p.3-44 / Chapter Chapter 4. --- Low-field magnetoresistance (LFMR) / Chapter 4.1. --- Low-field magnetoresistance --- p.4-1 / Chapter 4.2. --- Conclusion --- p.4-5 / References --- p.4-6 / Chapter Chapter 5. --- Structure characterization of LCMO/PCMO superlatticess by crater edge profiling --- p.5-1 / Chapter 5.1. --- Sample preparation --- p.5-2 / Chapter 5.2. --- Structure Characterization --- p.5-2 / Chapter 5.2.1. --- X-ray diffraction (XRD) --- p.5-2 / Chapter 5.2.2. --- The crater edge profiling --- p.5-5 / Chapter 5.2.2.1. --- SEM --- p.5-5 / Chapter 5.2.2.2. --- AES line scan --- p.5-10 / Chapter 5.3. --- Crater edge profiling of P1OO/STO --- p.5-12 / Chapter 5.4. --- Conclusion --- p.5-15 / References --- p.5-16 / Chapter Chapter 6. --- Conclusion --- p.6-1

The extraordinary magnetoresistance (EMR) in metal-semiconductor hybrid structures was first demonstrated using a van der Pauw configuration for a circular semiconductor wafer with a concentric metallic inclusion in it. This effect depends on the orbital motion of carriers in an external magnetic field, and the remarkably high magnetoresistance response observed suggests that the geometry of the metallic inclusion can be optimized to significantly enhance the EMR. Here we consider the theory and simulations to achieve this goal by comparing both two-dimensional as well as three-dimensional structures in an external magnetic field to evaluate the EMR in them. Examples of structures that are compatible with present day technological capabilities are given together with their expected responses in terms of EMR. For a 10 micron 2D square structure with a square metallic inclusion, we see a MR up to 10^7 percent for an applied magnetic field of 1 Tesla.