This report aims to study the degradation of poly(trimethylene carbonate) (PTMC) caused by the enzyme carboxylesterase in vitro. As well as to characterise polymer blends of f-BTI2g-TVTCN and poly(3-hydroxybutyric acid) as core components for organic electrochemical transistors (OETCs). This is to assess the suitability of these polymers in biodegradable biosensors. The degradation study of PTMC showed a lack of degradation in contrast to previous studies performed on the material; previous studies recorded a mass loss of between (5-8)% after two months. The cause for this discrepancy is still unknown but the evidence points to both systematic faults in the gravimetric analysis as well as random errors found in the equipment. The OECT showed that increasing the PHB fraction in the polymer blend resulted in a higher output. The most stable device consisted of a 1:6 blend of f-BTI2g-TVTCN to PHB. Fewer tests were conducted on the 1:10 blend because two devices were damaged during the experiment. The statistical impact of the smaller sample size cannot be overstated so further testing should be conducted to verify the results.

För att skapa ett hållbart samhälle måste material av fossilt ursprung ersättas med förnyelsebara och miljövänliga alternativ. Ett sådant alternativ är cellulosa från vedfibrer, som har stor potential att kunna ersätta många fossila material i framtiden. För att kunna uppnå detta behöver cellulosans egenskaper först modifieras för att passa olika ändamål och helt kunna ersätta fossila alternativ. I detta kandidatexamensprojekt modifierades blekt sulfatmassa, oblekt sulfatmassa, dissolvingmassa och kemitermomekanisk massa (CTMP) genom att introducera kvartära aminer med hjälp av två olika reagens, 2,3-epoxypropyltrimetylammoniumklorid (EPTMAC) och 3-kloro-2-hydroxypropyltrimetylammoniumklorid (CHPTAC). Under projektet undersöktes reagensens reaktionseffektivitet för de olika massorna genom att mäta substitutionsgraden (DS), hur förbehandling i form av torkning och malning påverkar modifieringsreaktionen och den modifierade massans egenskaper, utgångsmassornas svällningsegenskaper, samt mekaniska egenskaper som e-modul, brottstyrka och brottöjning hos pappersark tillverkade av modifierad massa. Resultaten från studien visar att det reaktionseffektivaste reagenset var CHPTAC som gav upphov till en genomgående högre effektivitet än samtliga modifieringar med EPTMAC, men att effektiviteten för respektive reagens är mindre beroende av pappersmassans komposition. Modifiering resulterade i att alla massor fick högre styrka i form av e-modul, brottstyrka och brottöjning. De mekaniska egenskaperna följde inte samma trend som substitutionsgraderna, vilket var oväntat. För att kunna dra mer pålitliga slutsatser skulle ytterligare studier behöva genomföras, inklusive upprepade modifieringar med varierande mängd reagens, mekaniska tester samt analys av ytterligare egenskaper som fibrernas ytor, kristallstruktur och längden på cellulosafibrerna.

In this project, solid sulphur based Li3PS4 electrolytes doped with Li4SiO4 were synthesised using two methods. In method A, a bought β-Li3PS4 electrolyte from Nei Corp was doped with 5 mole per cent Li4SiO4, resulting in a glass-ceramic electrolyte. In method B, the electrolyte was synthesised using 5Li4SiO4-95(75Li2S-25P2S5), resulting in a glassy material. In addition, a reference was synthesised using 75Li2S-25P2S5. Ball milling was the method of choice to dope the glass ceramic electrolyte and synthesise the glassy electrolyte. The dopant Li4SiO4 was synthesised using the chemicals SiO2 and Li2CO3. All samples were analysed using Raman, XPS, XRD, and EIS. In the end, it was found that doping the bought β-Li3PS4electrolyte with Li4SiO4 increased the ionic conductivity. While introducing Li4SiO4 to the glassy electrolyte lowered the ionic conductivity. The increase in ionic conductivity in the glass ceramic electrolyte was partly attributed to the increase in amorphous content, which happened when it was ball-milled and suppressed P-S-P bonds. The decrease in ionic conductivity that happened when doping the glassy material, is most likely caused by residual Li2S that seems unable to react due to the dopant.

Lithium ion batteries (LIBs) are widely used for storing and converting chemical energy into electrical energy. During battery operation, lithium ions move between electrode materials, enabling energy storage. However, aging mechanisms like lithium plating can negatively impact battery performance and lifetime. Lithium plating occurs when lithium ions are reduced to metallic lithium on the graphite electrode. The undesired Li plating in LIBs leads to dendrite formation that may puncture the separator, causing internal short-circuit and ultimately thermal runaway. This study aims to investigate the internal processes of LIBs during charge and discharge. Two analysis methods are employed: online electrochemical mass spectrometry (OEMS) and acoustic emission monitoring (AEM). OEMS is a gas analysis technique that combines electrochemical measurements with mass spectrometry to provide real-time testing of cells. OEMS allows identifying and quantifying gas evolution/consumption of chemical species. AE is a diagnostic tool, offering monitoring the health of LIBs through detection and characterisation of stress waves produced by parasitic mechano-electrochemical events. The results indicates that the formation of SEI thin film layer, generated gases like hydrogen and ethylene, while consuming carbon dioxide. During induced lithium plating, hydrogen and carbon dioxide were consumed, and ethylene gas was produced, due to new SEI film formation process. The acoustic emission analysis indicated that lithium plating was an active process, whereas SEI formation was less AE active. Further research is needed to understand the relationships and significance of these processes for battery performance and safety. Overall, this study highlighted the importance of investigating aging mechanisms in LIBs to enhance their performance and longevity. By combining OEMS and AE, it was possible to analyse the batteries behaviour during cycling. The evolution of gas and acoustic signals provided insights into the reactions and processes occurring inside the battery during cycling.

No description available.

The in vitro production of ceramic implants used for cranial defect repair can be challenging and complex. In this thesis, a raw material in such a production has been mapped in order to optimize the production process. The current production leaves variations in the handling properties of the calcium phosphate cement (CPC), such as the viscosity and setting performance. The problems originate from the in-house recrystallization of the raw material monocalcium phosphate monohydrate (MCPM) with a 70% ethanol solution. The treatment of MCPM is strongly dependent on the relative humidity and the current process is not reliable and leaves unwanted fluctuations in the quality of MCPM. Various material and process parameters were investigated to get a deeper knowledge of MCPM in the specific process. The mapping resulted in new information about how the MCPM recrystallizes and how it depends on the evaporation of the ethanol solution during the treatment. Other findings were that the particle size distribution of MCPM is not the only factor controlling the viscosity of the CPC; the density and shape of the MCPM particles may also influence the handling properties. The mapping led to a process optimization suggestion where the amount of ethanol solution is adjusted to the relative humidity during the recrystallization to neutralize the effect of the humidity. The adjustment of ethanol solution volume means the evaporation can be controlled and in theory, constant quality of MCPM can be maintained. Unfortunately, the new method needs additional data to be fully effective but shows great potential.

Thermoelectrics is the reversible process which transforms a temperature gradient across a material into an external voltage through a phenomenon known as the Seebeck effect. This has resulted in niche applications such as solid-state cooling for electronic and optoelectronic devices which exclude the need for a coolant or any moving parts and long-lasting, maintenance-free radioisotope thermoelectric generators used for deep-space exploration. However, the high price and low efficiency of thermoelectric generators have prompted scientists to search for new materials and/or methods to improve the efficiency of the already existing ones. Thermoelectric efficiency is governed by the dimensionless figure of merit 𝑧𝑇, which depends on the electrical conductivity, thermal conductivity and Seebeck coefficient value of the material and has rarely surpassed unity. In order to address these issues, research conducted on early transition metal nitrides spearheaded by cubic scandium nitride (ScN) thin films showed promising results with high power factors close to 3000 μWm−1K−2 at 500 °C. In this thesis, rock-salt cubic chromium nitride (CrN) deposited in the form of thin films by reactive magnetron sputtering was chosen for its large Seebeck coefficient of approximately -200 μV/K and low thermal conductivity between 2 and 4 Wm−1K−1. The results show that CrN in single crystal form has a low electrical resistivity below 1 mΩcm, a Seebeck coefficient value of -230 μV/K and a power factor close to 5000 μWm−1K−2 at room temperature. These promising results could lead to CrN based thermoelectric modules which are cheaper and more stable compared to traditional thermoelectric material such as bismuth telluride (Bi2Te3) and lead telluride (PbTe). In addition, the project resulting this thesis was prompted to investigate prospective ternary nitrides equivalent to ScN with (hopefully) better thermoelectric properties. Scandium nitride has a relatively high thermal conductivity value (close to 10 Wm−1K−1), resulting in a low 𝑧𝑇. A hypothetical ternary equivalent to ScN may have a similar electronic band structure and large power factor, but with a lower thermal conductivity value leading to better thermoelectric properties. Thus the elements magnesium, titanium, zirconium and hafnium were chosen for this purpose. DFT calculations were used to simulate TiMgN2, ZrMgN2 and HfMgN2. The results show the MeMgN2 stoichiometry to be stable, with two rivaling crystal structures: trigonal NaCrS2 and monoclinic LiUN2. / <p>The series name <em>Linköping Studies in Science and Technology Licentiate Thesis</em> is incorrect. The correct series name is <em>Linköping Studies in Science and Technology Thesis</em>.</p>

<p>ZnO nanoparticles in the size range 2.5–7 nm have been synthesised by a wet chemical method where ZnO particles were grown in basic zinc acetate solution. The optical band gap increases when the size of the particles decreases. An empirical relation between the optical band gap given from absorption measurements, and particle size given from XRD measurements has been developed and compared to other similar relations found in the literature.</p><p>   Time resolved UV-Vis spectroscopy has been used to follow the growth of particles in situ in solution. The data show that the growth mechanism not can be described by a simple Oswald ripening approach and nor by an exclusive agglomeration of smaller clusters into larger particles. The growth mechanism is more likely a combination of the proposed reaction themes. The data also reveal that particle formation do not demand a heating step for formation of the commonly assumed initial cluster Zn₄O(CH₃COO)₆.</p><p>   Steady state fluorescence has been studied as a function of particle size during growth in solution. These measurements confirm what is found in the literature in that the visible fluorescence is shifted to longer wavelengths and loses in intensity as the particles grow. Some picosecond spectroscopy has also been done where the UV fluorescence has been investigated. From these measurements it is apparent that the lifetime of the fluorescence increases with particle size.</p><p>    The phonon spectrum of ZnO has been studied with Raman spectroscopy for a number of different particle sizes. From these measurements it is clear that there is a strong quenching of the phonons due to confinement for the small particles, and the only clearly observed vibration is one at 436 cm^-1 which intensity strongly increases with particle size.   </p>

ZnO nanoparticles in the size range 2.5–7 nm have been synthesised by a wet chemical method where ZnO particles were grown in basic zinc acetate solution. The optical band gap increases when the size of the particles decreases. An empirical relation between the optical band gap given from absorption measurements, and particle size given from XRD measurements has been developed and compared to other similar relations found in the literature.    Time resolved UV-Vis spectroscopy has been used to follow the growth of particles in situ in solution. The data show that the growth mechanism not can be described by a simple Oswald ripening approach and nor by an exclusive agglomeration of smaller clusters into larger particles. The growth mechanism is more likely a combination of the proposed reaction themes. The data also reveal that particle formation do not demand a heating step for formation of the commonly assumed initial cluster Zn4O(CH3COO)6.    Steady state fluorescence has been studied as a function of particle size during growth in solution. These measurements confirm what is found in the literature in that the visible fluorescence is shifted to longer wavelengths and loses in intensity as the particles grow. Some picosecond spectroscopy has also been done where the UV fluorescence has been investigated. From these measurements it is apparent that the lifetime of the fluorescence increases with particle size.     The phonon spectrum of ZnO has been studied with Raman spectroscopy for a number of different particle sizes. From these measurements it is clear that there is a strong quenching of the phonons due to confinement for the small particles, and the only clearly observed vibration is one at 436 cm-1 which intensity strongly increases with particle size.

III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. In fact, the blue emission from Indium Gallium Nitride (InGaN), which was awarded the 2014 Nobel Prize in Physics, is the basis of the common and important white light emitting diode (LED). Quantum dots (QDs) have properties that make them very interesting for light emitting devices for a range of different applications, such as the possibility of increasing device efficiency. The spectrally well-defined emission from QDs also allows accurate color reproduction and high-performance communication devices. The small size of QDs, combined with selective area growth allows for an improved display resolution. By control of the polarization direction of QDs, they can be used in more efficient displays as well as in traditional communication devices. The possibility of sending out entangled photon pairs is another QD property of importance for quantum key distribution used for secure communication. QDs can hold different exciton complexes, such as the neutral single exciton, consisting of one electron and one hole, and the biexciton, consisting of two excitons. The integrated PL intensity of the biexciton exhibits a quadratic dependence with respect to the excitation power, as compared to the linear power dependence of the neutral single exciton. The lifetime of the neutral exciton is 880 ps, whereas the biexciton, consisting of twice the number of charge carriers and lacks a dark state, has a considerably shorter lifetime of only 500 ps. The ratio of the lifetimes is an indication that the size of the QD is in the order of the exciton Bohr radius of the InGaN crystal making up these QDs in the InGaN QW. A large part of the studies of this thesis has been focused on InGaN QDs on top of hexagonal Gallium Nitride (GaN) pyramids, selectively grown by Metal Organic Chemical Vapor Deposition (MOCVD). On top of the GaN pyramids, an InGaN layer and a GaN capping layer were grown. From structural and optical investigations, InGaN QDs have been characterized as growing on (0001) facets on truncated GaN pyramids. These QDs exhibit both narrow photoluminescence linewidths and are linearly polarized in directions following the symmetry of the pyramids. In this work, the neutral single exciton, and the more rare negatively charged exciton, have been investigated. At low excitation power, the integrated intensity of the PL peak of the neutral exciton increases linearly with the excitation power. The negatively charged exciton, on the other hand, exhibits a quadratic power dependence, just like that of the biexciton. Upon increasing the temperature, the power dependence of the negatively charged exciton changes to linear, just like the neutral exciton. This change in power dependence is explained in terms of electrons in potential traps close to the QD escaping by thermal excitation, leading to a surplus of electrons in the vicinity of the QD. Consequently, only a single exciton needs to be created by photoexcitation in order to form a negatively charged exciton, while the extra electron is supplied to the QD by thermal excitation. Upon a close inspection of the PL of the neutral exciton, a splitting of the peak of just below 0.4 meV is revealed. There is an observed competition in the integrated intensity between these two peaks, similar to that between an exciton and a biexciton. The high energy peak of this split exciton emission is explained in terms of a remotely charged exciton. This exciton state consists of a neutral single exciton in the QD with an extra electron or hole in close vicinity of the QD, which screens the built-in field in the QD. The InGaN QDs are very small; estimated to be on the order of the exciton Bohr radius of the InGaN crystal, or even smaller. The lifetimes of the neutral exciton and the negatively charged exciton are approximately 320 ps and 130 ps, respectively. The ratio of the lifetimes supports the claim of the QD size being on the order of the exciton Bohr radius or smaller, as is further supported by power dependence results. Under the assumption of a spherical QD, theoretical calculations predict an emission energy shift of 0.7 meV, for a peak at 3.09 eV, due to the built-in field for a QD with a diameter of 1.3 nm, in agreement with the experimental observations. Studying the InGaN QD PL from neutral and charged excitons at elevated temperatures (4 K to 166 K) has revealed that the QDs are surrounded by potential fluctuations that trap charge carriers with an energy of around 20 meV, to be compared with the exciton trapping energy in the QDs of approximately 50 meV. The confinement of electrons close to the QD is predicted to be smaller than for holes, which accounts for the negative charge of the charged exciton, and for the higher probability of capturing free electrons. We have estimated the lifetimes of free electrons and holes in the GaN barrier to be 45 ps and 60 ps, in consistence with excitons forming quickly in the barrier upon photoexcitation and that free electrons and holes get trapped quickly in local potential traps close to the QDs. This analysis also indicates that there is a probability of 35 % to have an electron in the QD between the photoexcitation pulses, in agreement with a lower than quadratic power dependence of the negatively charged exciton. InN is an attractive material due to its infrared emission, for applications such as light emitters for communication purposes, but it is more difficult to grow with high quality and low doping concentration as compared to GaN. QDs with a higher In-composition or even pure InN is an interesting prospect as being a route towards increased quantum confinement and room temperature device operation. For all optical devices, p-type doping is needed. Even nominally undoped InN samples tend to be heavily n-type doped, causing problems to make pn-junctions as needed for LEDs. In our work, we present Mg-doped p-type InN films, which when further increasing the Mg-concentration revert to n-type conductivity. We have focused on the effect of the Mg-doping on the light emission properties of these films. The low Mg doped InN film is inhomogeneous and is observed to contain areas with n-type conductivity, so called n-type pockets in the otherwise p-type InN film. A higher concentration of Mg results in a higher crystalline quality and the disappearance of the n-type pockets. The high crystalline quality has enabled us to determine the binding energy of the Mg dopants to 64 meV. Upon further increase of the Mg concentration, the film reverts to ntype conductivity. The highly Mg doped sample also exhibits a red-shifted emission with features that are interpreted as originating from Zinc-Blende inclusions in the Wurtzite InN crystal, acting as quantum wells. The Mg doping is an important factor in controlling the conductivity of InN, as well as its light emission properties, and ultimately construct InN-based devices. In summary, in this thesis, both pyramidal InGaN QDs and InGaN QDs in a QW have been investigated. Novel discoveries of exciton complexes in these QD systems have been reported. Knowledge has also been gained about the challenging material InN, including a study of the effect of the Mg-doping concentration on the semiconductor crystalline quality and its light emission properties. The outcome of this thesis enriches the knowledge of the III-Nitride semiconductor community, with the long-term objective to improve the device performance of III-Nitride based light emitting devices.