Cette thèse a été initialement motivée par la compréhension de l’activité électrocatalytique particulière de particules PtNi/C creuses pour l’electroréduction du dioxygène (ORR). L’étude des mécanismes de formation et croissance de ces particules creuses, grâce à des techniques operando basées sur l’interaction rayons X- et/ou électrons-matière, a permis de montrer que les défauts cristallins améliorent les propriétés électrocatalytiques de nanomatériaux bimétalliques pour l’ORR. Le concept de « catalyseur défectueux » a pu être progressivement étendu à d’autres nanostructures PtNi, notamment des nanocatalyseurs à forme contrôlée, grâce à de fructueuses collaborations avec d’autres laboratoires européens. Ce travail montre, qu’en raison de la distorsion de leur surface, les nanomatériaux défectueux présentent des propriétés de chimisorption uniques, définissant ainsi une nouvelle classe de catalyseurs prometteurs et stables. / This PhD thesis was initially motivated by the understanding of the peculiar electrocatalytic activity of hollow PtNi/C nanoparticles for the oxygen reduction reaction (ORR). Investigations on the formation and growth mechanism of this novel class of nanocatalysts using operando X-ray and electron-based techniques revealed that, beyond alloying effects, structural disorder is a lever to boost the ORR kinetics on bimetallic nanomaterials. The ‘defects do catalysis’ concept was progressively extended to various PtNi catalyst nanostructures, namely to advanced shape-controlled nanocatalysts from the ORR electrocatalysis landscape thanks to fruitful collaborations with European laboratories. This work shows that, through their distorted surface, microstrained nanomaterials feature unprecedented adsorption chemisorption properties and represent a viable approach to sustainably enhance the ORR activity.

Nanometric thin films are used widely throughout various industries and for various applications. Metallic thin films, specifically, are relied upon extensively in the microelectronics industry, among others. For example, alloy thin films are being investigated for CMOS applications, tungsten films find uses as contacts and diffusion barriers, and copper is used often as interconnect material. Appropriate metrology methods must therefore be used to characterize the physical properties of these films. Xray scattering experiments are well suited for the investigation of nano-scaled systems, and are the focus of this doctoral dissertation. Emphasis is placed on (1) phase identification of polycrystalline thin films, (2) the evaluation of the grain size and microstrain of metallic thin films by line profile analysis, and (3) the study of morphological evolution in solid/solid interfaces. To illustrate the continued relevance of x-ray diffraction for phase identification of simple binary alloy systems, Pt-Ru thin films, spanning the compositional range from pure Pt to pure Ru were investigated. In these experiments, a meta-stable extension of the HCP phase is observed in which the steepest change in the electronic work function coincides with a rapid change in the c/a ratio of the HCP phase. For grain size and microstrain analysis, established line profile methods are discussed in terms of Cu and W thin film analysis. Grain sizes obtained by x-ray diffraction are compared to transmission electron microscopy based analyses. Significant discrepancies between x-ray and electron microscopy are attributed to sub-grain misorientations arising from dislocation core spreading at the film/substrate interface. A novel "residual" full width half max parameter is introduced for examining the iv contribution of strain to x-ray peak broadening. The residual width is subsequently used to propose an empirical method of line profile analysis for thin films on substrates. X-ray reflectivity was used to study the evolution of interface roughness with annealing for a series of Cu thin films that were encapsulated in both SiO2 and Ta/SiO2. While all samples follow similar growth dynamics, notable differences in the roughness evolution with high temperature ex-situ annealing were observed. The annealing resulted in a smoothing of only one interface for the SiO2 encapsulated films, while neither interface of the Ta/SiO2 encapsulated films evolved significantly. The fact that only the upper Cu/SiO2 interface evolves is attributed to mechanical pinning of the lower interface to the rigid substrate. The lack of evolution of the Cu/Ta/SiO2 interface is consistent with the lower diffusivity expected of Cu in a Cu/Ta interface as compared to that in a Cu/SiO2 interface. The smoothing of the upper Cu/SiO2 interface qualitatively follows that expected for capillarity driven surface diffusion but with notable quantitative deviation.

O objetivo deste trabalho foi desenvolver e implementar uma metodologia envolvendo a análise de perfis de difração de raios X (X-ray Line Profile Analysis - XLPA) para o estudo e determinação do tamanho médio de cristalitos e microdeformação em materiais. Para isto houve o desenvolvimento de um programa computacional para facilitar o tratamento dos picos presentes em um difratograma e realizar a deconvolução de perfis através do Método de Stokes para se corrigir a contribuição instrumental nos perfis de difração. Os métodos de XLPA de espaço real estudados e aplicados neste trabalho foram os métodos de Scherrer, Williamson-Hall e Single-Line (ou Linha Única) e o método de Warren-Averbach de espaço de Fourier. Além disso, utilizando-se um modelamento matemático foi possível calcular a distribuição de tamanhos de cristalitos para um caso isotrópico, onde considerou-se a distribuição log-normal e cristalitos com forma esférica. Foi possível demonstrar que a teoria proposta pode ser considerada como uma boa aproximação avaliando-se uma razão de dispersão. As metodologias descritas acima foram aplicadas em dois materiais distintos: na liga metálica Zircaloy-4 e em ZnO. / The objective of this work was to develop and implement a methodology of X-ray Line Profile Analysis (XLPA) for the study and determination of the mean crystallite sizes and microstrains in materials. A computer program was developed to speed up the treatment of diffraction peaks and perform the deconvolution utilizing the Stokes method to correct the instrumental contribution in the X-ray diffraction measurements. The XLPA methods used were the Scherrer, Williamson-Hall and Single-Line methods, which can be called real space methods, and the Fourier space method of Warren-Averbach. Furthermore, considering a mathematical modelling it was possible to calculate the crystallite size distribution, considering the log-normal distribution and spherical crystallites. It was possible to demonstrate the proposed theory can provide reliable results evaluating a dispersion parameter. The methodologies described above were applied in two distinct materials: in the alloy Zircaloy-4 and in ZnO.

O objetivo deste trabalho foi desenvolver e implementar uma metodologia envolvendo a análise de perfis de difração de raios X (X-ray Line Profile Analysis - XLPA) para o estudo e determinação do tamanho médio de cristalitos e microdeformação em materiais. Para isto houve o desenvolvimento de um programa computacional para facilitar o tratamento dos picos presentes em um difratograma e realizar a deconvolução de perfis através do Método de Stokes para se corrigir a contribuição instrumental nos perfis de difração. Os métodos de XLPA de espaço real estudados e aplicados neste trabalho foram os métodos de Scherrer, Williamson-Hall e Single-Line (ou Linha Única) e o método de Warren-Averbach de espaço de Fourier. Além disso, utilizando-se um modelamento matemático foi possível calcular a distribuição de tamanhos de cristalitos para um caso isotrópico, onde considerou-se a distribuição log-normal e cristalitos com forma esférica. Foi possível demonstrar que a teoria proposta pode ser considerada como uma boa aproximação avaliando-se uma razão de dispersão. As metodologias descritas acima foram aplicadas em dois materiais distintos: na liga metálica Zircaloy-4 e em ZnO. / The objective of this work was to develop and implement a methodology of X-ray Line Profile Analysis (XLPA) for the study and determination of the mean crystallite sizes and microstrains in materials. A computer program was developed to speed up the treatment of diffraction peaks and perform the deconvolution utilizing the Stokes method to correct the instrumental contribution in the X-ray diffraction measurements. The XLPA methods used were the Scherrer, Williamson-Hall and Single-Line methods, which can be called real space methods, and the Fourier space method of Warren-Averbach. Furthermore, considering a mathematical modelling it was possible to calculate the crystallite size distribution, considering the log-normal distribution and spherical crystallites. It was possible to demonstrate the proposed theory can provide reliable results evaluating a dispersion parameter. The methodologies described above were applied in two distinct materials: in the alloy Zircaloy-4 and in ZnO.