Le contexte industriel est favorable aux échangeurs-réacteurs catalytiques intensifiés puisqu’ils permettent une diminution des limitations aux transferts de matière et de chaleur comparé aux réacteurs conventionnels. Toutefois, l'industrialisation de ces unités est problématique à cause de l'absence de logiciel d’ingénierie de prédiction et d’optimisation de leurs performances. Afin de construire un tel outil, les écoulements, les transferts de matière interne et externe liés aux réactions catalytiques hétérogènes, les transferts de chaleur convectif, conductif, diffusif et par rayonnement sont d’abord analysés, permettant de formuler des hypothèses simplificatrices. Les phénomènes pertinents identifiés sont ensuite mis en équations pour créer la base physique de ProSec Réaction, le nouveau logiciel de simulation des échangeurs-réacteurs. Ce logiciel est validé par comparaison avec les résultats expérimentaux du pilote de vaporeformage du méthane d'Air Liquide et par confrontation avec des simulations tri-dimensionnelles de celui-ci (CFD). L'excellente adéquation entre les résultats expérimentaux et numériques démontre le potentiel de prédiction du modèle mono-dimensionnel développé. Dans le cas particulier des échangeurs-réacteurs à plaques et ailettes catalytiques (wash-coat), une représentation bi-dimensionnelle discrète est construite et permet de tenir compte des effets thermiques radiaux intrinsèques à ces échangeurs particuliers. Enfin, ProSec Réaction est exploité pour évaluer les perspectives d'optimisation géométrique des canaux de l'échangeur-réacteur du pilote d'Air Liquide. Celles-ci montrent la flexibilité et l'intérêt de ce nouvel outil de simulation / Intensified heat exchanger reactors are promising technologies in the current industrial context because of their high potential to significantly reduce heat and mass transfer limitations compared to conventional reactors. However, the absence of simulation software for predicting their performances and optimising their geometry inside a flowsheet is limiting the industrialisation of these units. Preliminary to the development of such a simulation tool, flow characteristics, internal and external mass transfers inherent to heterogeneous catalytic reactions, convective, conductive, diffusive and radiative heat transfers are analysed, allowing the definition of simplifying assumptions. The identified relevant phenomena are then modelled and constitute the physical base of ProSec Reaction, the new heat exchanger-reactor simulation software. This software is validated by comparing the predicted values to the Air Liquide steam reforming pilot plant results and to three-dimensional simulation results as well (CFD). The excellent consistency between numerical and experimental results demonstrates the accuracy and the predictive potential of the developed one-dimensional model. In the specific case of wall-coated plate-fin heat exchanger reactors, a discrete two-dimensional model is built and allows the representation of radial temperature gradients in the material, which are intrinsic to these specific heat exchangers. Finally, optimisation perspectives of the Air Liquide pilot plant heat exchanger reactor channel geometry are evaluated thanks to ProSec Reaction. They demonstrate the flexibility and the benefits of this new simulation tool

Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non-adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full-custom mixed-mode and full-digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process ?? a radio-frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators. Initially, after the design specifications were decided upon, I characterized NFET and PFET devices and a n+-diffusion resistor from 500 nm and 250 nm commercial SOS-CMOS processes. Measuring their conductance curves at 300 300 K, 4.2 2 K, and sub-K (30 30 mK base to 1000 1000 mK) showed that they function with desirable behaviour although exhibiting some deviations from their 300 300 K characteristics. The mixed-mode first generation control-pulse generator was demonstrated showing that it produced dwell-time adjustable pulses with 100 100 ps rise-times at 300 K, 4.2 2 K, and sub-K with a power dissipation of 12 12 uW at 100 100 MHz. The full-digital second generation control-pulse generator was demonstrated showing accurately adjustable dwell-times settable via a control-word streamed synchronously to a shift-register. The design was based on a ripple-counter with provisions for internal or external clocking. This research has demonstrated that SOS-CMOS technology is highly feasible for the fabrication of control microelectronics for a Si:P-based QC. I have demonstrated full-custom SOS-CMOS mixed-mode and full-digital control circuits at 300 300 K, 4.2 2 K, and sub-K which suitable for qubit control.

Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non-adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full-custom mixed-mode and full-digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process ?? a radio-frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators. Initially, after the design specifications were decided upon, I characterized NFET and PFET devices and a n+-diffusion resistor from 500 nm and 250 nm commercial SOS-CMOS processes. Measuring their conductance curves at 300 300 K, 4.2 2 K, and sub-K (30 30 mK base to 1000 1000 mK) showed that they function with desirable behaviour although exhibiting some deviations from their 300 300 K characteristics. The mixed-mode first generation control-pulse generator was demonstrated showing that it produced dwell-time adjustable pulses with 100 100 ps rise-times at 300 K, 4.2 2 K, and sub-K with a power dissipation of 12 12 uW at 100 100 MHz. The full-digital second generation control-pulse generator was demonstrated showing accurately adjustable dwell-times settable via a control-word streamed synchronously to a shift-register. The design was based on a ripple-counter with provisions for internal or external clocking. This research has demonstrated that SOS-CMOS technology is highly feasible for the fabrication of control microelectronics for a Si:P-based QC. I have demonstrated full-custom SOS-CMOS mixed-mode and full-digital control circuits at 300 300 K, 4.2 2 K, and sub-K which suitable for qubit control.

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