Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 86-94). Also available in electronic format on the Internet.

Vertical external-cavity surface-emitting lasers are ideal testbeds for studying the influence of the non-equilibrium many-body dynamics on mode locking. As we will show in this thesis, ultra short pulse generation involves a marked departure from Fermi carrier distributions assumed in prior theoretical studies. A quantitative model of the mode locking dynamics is presented, where the semiconductor Bloch equations with Maxwell’s equation are coupled, in order to study the influences of quantum well carrier scattering on mode locking dynamics. This is the first work where the full model is solved without adiabatically eliminating the microscopic polarizations. In many instances we find that higher order correlation contributions (e.g. polarization dephasing, carrier scattering, and screening) can be represented by rate models, with the effective rates extracted at the level of second Born-Markov approximations. In other circumstances, such as continuous wave multi-wavelength lasing, we are forced to fully include these higher correlation terms. In this thesis we identify the key contributors that control mode locking dynamics, the stability of single pulse mode-locking, and the influence of higher order correlation in sustaining multi-wavelength continuous wave operation.

Le développement technologique dans le domaine des télécommunications, ainsi que des systèmes de détection, a accru ces dernières années la nécessité de signaux de référence présentant une très haute pureté spectrale. L'augmentation des débits, la saturation des bandes de fréquence ainsi que les performances imposées pour la détection radar ont ouvert la voie à la génération micro-onde par l'optique. Ces références de fréquence sont souvent issues d'oscillateurs optoélectroniques (OEO). Ces oscillateurs intègrent un élément de stockage de l'énergie au travers de résonateurs ou de longues lignes à retard fibrées afin d'augmenter leur facteur qualité et permettant ainsi d'atteindre des performances supérieures aux signaux multipliés à partir de sources basses fréquences ou directement à partir d'oscillateurs micro-ondes à résonateur diélectrique (DRO). Une topologie originale d'oscillateurs optoélectroniques a été proposée à la fin des années 1990 par une équipe américaine : il s'agit de remplacer le résonateur passif nécessitant un verrouillage du laser sur ce dernier par un résonateur actif, intégrant un amplificateur optique. Ce résonateur actif, un laser à blocage de modes, permet un couplage entre l'oscillation optique du laser et l'oscillation optoélectronique. On parle alors d'oscillateur optoélectronique couplé (COEO). Les performances du COEO sont étroitement liées à la pureté spectrale du signal issu du laser à blocage de modes. Ce travail de thèse traite de l'étude et de l'optimisation de ces systèmes. Une étude approfondie sur le bruit dans les amplificateurs optiques a tout d'abord été menée afin de déterminer quel type d'amplificateur choisir pour le COEO et sous quelles conditions l'amplification optique apporte un bruit de phase minimal. Ensuite, un COEO à 10 GHz a été réalisé, présentant un très faible bruit de phase atteignant - 132 dBc/Hz à 10 kHz de la porteuse. Un modèle a par ailleurs été implémenté, permettant de déterminer a posteriori l'efficacité du couplage et ainsi la bande de verrouillage entre l'oscillation optoélectronique et le laser à blocage de modes. Ce couplage interne dépend fortement de la dynamique du système. Cependant, les différents effets non linéaires qui ont lieu dans l'amplificateur à semiconducteur et les fibres ne permettent pas d'obtenir un modèle analytique. Un modèle itératif a alors été proposé afin d'obtenir les propriétés de l'enveloppe complexe lentement variable du peigne de fréquence généré en sortie du laser dont la photodétection conduit à la puissance RF générée par le COEO. Le COEO génère un peigne de fréquence suffisamment large pour produire des harmoniques RF supérieurs à la fréquence de répétition du laser à blocage de modes, si les modes longitudinaux espacés de plusieurs intervalles spectraux libres (ISL) sont en phase. Le modèle itératif développé permet, à partir des paramètres expérimentaux de déterminer le spectre optique ainsi que la distribution de phase à l'intérieur de celui-ci. Il est possible alors d'augmenter la puissance d'une harmonique en sortie de la photodiode par un ajout d'éléments dispersifs. Cette multiplication de fréquence permet la génération de signaux à haute pureté spectrale en bande millimétrique. Une démonstration expérimentale à 90 GHz a été proposée, basée sur un COEO fonctionnant à 30 GHz. Ces résultats sont prometteurs et une intégration du COEO dans un boîtier thermalisé ainsi qu'une gestion plus fine de la dispersion des fibres peut permettre des améliorations significatives sur le bruit de phase du système. / The important rise of telecommunication systems in the past decades, together with the sensitivity improvement of radar systems, has increased the necessity for high spectral purity frequency references at high frequencies. The saturation of classical microwave bandwidths motivated the search of frequency references at higher frequencies, such as K-band. Frequency multiplication from highly stable sources, such as quartz sources, is limited by the increase of the noise floor, which is often prohibitive at millimeter wave frequencies. On the contrary, microwave generation using optics becomes a very efficient technique in this frequency range. Indeed, passive optical resonators or delay lines feature a high Q factor which can be used to stabilize the microwave frequency. The best phase noise performance is today obtained with long delay line oscillators. However, a spurious mode suppression technique has to be implemented in this type of OEOs. The use of an active optical resonator is a third solution, which avoids any locking technique between the laser and the passive resonator. The first architecture of this type has been proposed at the end of the 1990's. In such a system, a mode-locked laser is coupled to a microwave oscillator (COEO). COEO phase noise performances are strongly dependent on the spectral purity of the mode locked laser signal. This thesis work focus on the study and the optimization of this system. Optical amplifiers noise is firstly investigated, in order to determine the optimal conditions to minimize their phase noise contribution to the COEO. A 10 GHz SOA based COEO has been realized and features a low phase noise level reaching - 132 dBc/Hz at 10 kHz from the carrier. An analytical model has also been developed to obtain the locking range of the coupled oscillations. This frequency range is strongly dependent on the coupling efficiency between optical oscillation and the optoelectronic oscillation. This parameter cannot be calculated analytically and an iterative model has been proposed to determine the amplitude and phase of the optical spectrum. Therefore, one can calculate the RF power on the photodiode, on which the coupling efficiency is depending. Since COEO features a large optical frequency comb where each tooth of the comb is phase locked thanks to the mode locked laser, harmonic generation from COEO is possible. Wide frequency comb from high frequency COEO allow millimeter wave generation. The iterative model developed in this work enable to determine the RF power of one specified harmonic from experimental parameters. Harmonic selection can also be performed through the management of the chromatic dispersion. Such frequency multiplication has been implemented to generate a high purity 90 GHz signal from a 30 GHz COEO.These results are promising and an integration of the system in a thermalized box is under process.

No description available.

External cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers is a semiconductor optical amplifier (SOA), and passive and hybrid mode-locked operation are achieved by the introduction of a saturable absorber (SA) in the laser cavity. Pump-probe techniques were used to measure the intracavity absorption dynamics of a SA in an external cavity semiconductor mode-locked laser and the gain dynamics of a SOA for the amplification of diverse pulses. The SOA gain dynamics measurements include the amplification of 750 fs pulses, 6.5 ps pulses, multiwavelength pulses and the intracavity gain dynamics of an external cavity multiwavelength semiconductor mode-locked laser. The experimental results show how the inherent chirp on pulses from external cavity semiconductor mode-locked lasers results in a slow gain depletion without significant fast gain dynamics. In the multiwavelength operation regime of these lasers, the chirp broadens the temporal pulse profile and decreases the temporal beating resulting from the phase correlation among wavelength channels. This results in a slow gain depletion mitigating nonlinearities and gain competition among wavelength channels in the SOA supporting the multiwavelength operation of the laser. Numerical simulations support the experimental results.

A true linearized interferometric intensity modulator for pulsed light has been proposed and experimentally presented in this thesis. This has been achieved by introducing a mode-locked laser into one of the arms of a Mach-Zehnder interferometer and injection-locking it to the input light (which is pulsed and periodic). By modulating the injection-locked laser, and combining its output light with the light from the other arm of interferometer in quadrature, one can achieve true linearized intensity modulator. This linearity comes from the arcsine phase response of the injection-locked mode-locked laser (as suggested by steady-state solution of Adler's equation) when it is being modulated. Mode-locked lasers are fabricated using a novel AlGaInAs-InP material system. By using the BCB for planarization and minimizing the metal pad size and directly modulating the laser, we have achieved very effective fundamental hybrid mode-locking at the repetition rate of ~ 23 GHz. This laser also provided the short pulses of 860 fs and 280 fs timing jitter integrated from 1 Hz- 100 MHz. The linearized intensity modulator has been built by using two identical two-section mode-locked lasers with the same length, one as the slave laser in one of the arms of the Mach-Zehnder interferometer injection-locked to the other one as the master which is the input light to the modulator. A low V? of 8.5 mV is achieved from this modulator. Also the current of the gain section or the voltage of the saturable absorber section of the slave laser has been used to apply the modulation signal. A spur free dynamic range of 70 dB.Hz2/3 is achieved when modulating the modulator through the saturable absorber. Modulating the saturable absorber provides a reduced third-order intermodulation tone with respect to modulating the gain. This is simply because of the unwanted amplitude modulation created when modulating the gain section current. Finally an improved design is proposed and demonstrated to improve the modulator performance. This is achieved by introducing a third section to the laser. Using the impurity free vacancy disordering technique the photoluminescence peak of this section is blue-shifted selectively and therefore there would not be any absorption in that passive section. By applying the modulation signal to this passive section rather than applying it to the gain section or saturable absorber section, the amplitude and phase modulation could be decoupled. The experimental results have presented here and an almost six-fold reduction in V? and 5 dB improvement in spur free dynamic range have been achieved. The proposed and demonstrated configuration as an analog optical link has the potential to increase the performance and resolution of photonic analog-to-digital converters.

The construction and characterization of ultra-low noise semiconductor-based mode-locked lasers as frequency comb sources with multi-gigahertz combline-to-combline spacing is studied in this dissertation. Several different systems were built and characterized. The first of these systems includes a novel mode-locking mechanism based on phase modulation and periodic spectral filtering. This mode-locked laser design uses the same intra-cavity elements for both mode-locking and frequency stabilization to an intra-cavity, 1,000 Finesse, Fabry-Pérot Etalon (FPE). On a separate effort, a mode-locked laser based on a Slab-Coupled Optical Waveguide Amplifier (SCOWA) was built. This system generates a pulse-train with residual timing jitter of

In this dissertation, a novel semiconductor mode-locked oscillator which is an extension of eXtreme Chirped Pulse Amplification (XCPA) is investigated. An eXtreme Chirped Pulse Oscillator (XCPO) implemented with a Theta cavity also based on a semiconductor gain is presented for generating more than 30ns frequency-swept pulses with more than 100pJ of pulse energy and 3.6ps compressed pulses directly from the oscillator. The XCPO shows the two distinct characteristics which are the scalability of the output energy and the mode-locked spectrum with respect to repetition rate. The laser cavity design allows for low repetition rate operation < 100MHz. The cavity significantly reduces nonlinear carrier dynamics, integrated self phase modulation (SPM), and fast gain recovery in a Semiconductor optical Amplifier (SOA). Secondly, a functional device, called a Grating Coupled Surface Emitting Laser (GCSEL) is investigated. For the first time, passive and hybrid mode-locking of a GCSEL is achieved by using saturable absorption in the passive section of GCSEL. To verify the present limitation of the GCSEL for passive and hybrid mode-locking, a dispersion matched cavity is explored. In addition, a Grating Coupled surface emitting Semiconductor Optical Amplifier (GCSOA) is also investigated to achieve high energy pulse. An energy extraction experiment for GCSOA using stretched pulses generated from the colliding pulse semiconductor mode-locked laser via a chirped fiber bragg grating, which exploits the XCPA advantages is also demonstrated. Finally, passive optical cavity amplification using an enhancement cavity is presented. In order to achieve the interferometric stability, the Hänsch-Couillaud Method is employed to stabilize the passive optical cavity. The astigmatism-free optical cavity employing an acousto-optic modulator (AOM) is designed and demonstrated. In the passive optical cavity, a 7.2 of amplification factor is achieved with a 50 KHz dumping rate.

This dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be measured. Experimental results begin with an exploration of the consequences on the timing and amplitude jitter of the phase noise of an RF source used for mode-locking. These results lead to an ultralow timing jitter source, with 30 fs of timing jitter (1 Hz to 5 GHz, extrapolated). The focus of the work then shifts to generating a stabilized optical frequency comb. The first technique to generating the frequency comb is through optical injection. It is shown that not only can injection locking stabilize a mode-locked laser to the injection seed, but linewidth narrowing, timing jitter reduction and suppression of superfluous optical supermodes of a harmonically mode-locked laser also result. A scheme by which optical injection locking can be maintained long term is also proposed. Results on using an intracavity etalon for supermode suppression and optical frequency stabilization then follow. An etalon-based actively mode-locked laser is shown to have a timing jitter of only 20 fs (1Hz-5 GHz, extrapolated), optical linewidths below 10 kHz and optical frequency instabilities less than 400 kHz. By adding dispersion compensating fiber, the optical spectrum was broadened to 2 THz and 800 fs duration pulses were obtained. By using the etalon-based actively mode-locked laser as a basis, a completely self-contained frequency stabilized coupled optoelectronic oscillator was built and characterized. By simultaneously stabilizing the optical frequencies and the pulse repetition rate to the etalon, a 10 GHz comb source centered at 1550 nm was realized. This system maintains the high quality performance of the actively mode-locked laser while significantly reducing the size weight and power consumption of the system. This system also has the potential for outperforming the actively mode-locked laser by increasing the finesse and stability of the intracavity etalon. The final chapter of this dissertation outlines the future work on the etalon-based coupled optoelectronic oscillator, including the incorporation of a higher finesse, more stable etalon and active phase noise suppression of the RF signal. Two appendices give details on phase noise measurements that incorporate carrier suppression and the noise model for the coupled optoelectronic oscillator.

Dans un premier temps, nous avons optimisé des structures laser VECSEL dans le but de maximiser la puissance émise par une gestion thermique adéquate. Les structures conçues et fabriquées contiennent une zone active à base d’InP pour l’émission à 1.55 µm. Un miroir hybride métal- semiconducteur à base d’un miroir de Bragg GaAs/AlAs est intégré à la zone active. La structure semiconductrice est intégrée avec différents substrats hôtes de bonne conductivité thermique sur la base de simulations numériques, et les performances des dispositifs fabriqués sont évaluées expérimentalement sous pompage optique Les VECSELs intégrés sur substrat diamant CVD présentent les puissances de sortie les plus élevées, et sont de bons candidats pour l’émission de puissance (> 500 mW) à 1.55 µm et pour les expériences de blocage de modes. D’un autre côté nous montrons que l’intégration d’un substrat de cuivre par voie électrochimique représente une approche flexible et faible-coût, pour atteindre une puissance de sortie de plusieurs dizaines de mW jusqu’à ~ 200 mW.Dans un second temps, nous avons développé des SESAMs à 1.55 µm. La région active est formée de puits quantiques InGaAsN/GaAs, couplés par effet tunnel à des plans GaAsN à recombinaison rapide. Des temps caractéristiques de recouvrement de l’absorption de quelques picosecondes à la dizaine de picoseconde sont ainsi mesurés.La résonance de la microcavité SESAM est ajustée de manière contrôlée grâce à des couches de phase spécifques épitaxiées en surface de la structure. La gravure sélective couche par couche des couches de phase permet d’accorder la profondeur de modulation et la dispersion de vitesse de groupe (GDD) de la structure SESAM.Finalement nous avons assemblé les structures SESAM et VECSEL dans une cavité à quatre miroirs pour obtenir un fonctionnement laser en régime de blocage de modes passif. Nous observons que la durée de l’impulsion de blocage de modes peut être réduite de plusieurs picosecondes (~ 10 ps), jusqu’à moins de la picoseconde (0.9 ps) en accordant la GDD de la structurre SESAM. / In a first step, we have developed and implemented VECSEL structures, aiming at maximizing the laser output power through a proper thermal management. The fabricated VECSEL chips contain an InP-based active region for emission at 1.55 µm. A hybrid metal-GaAs/AlAs Bragg mirror is used to achieve efficient dissipation of the heat generated in the active region. The semiconductor structure is integrated to various host substrates and the VECSEL performances are investigated numerically and experimentally. VECSELs with CVD diamond substrates have the best overall performance and are promising for large output power (> 500 mW), while electroplated copper substrate is demonstrated to be a flexible and cost-effective approach for thermal management in 1.55 µm OP-VECSEL in order to achieve output power of several tens of mW to ~ 200 mW. The second part of the work is devoted to the development of SESAM structures at 1.55 µm. The structures include an active region consisting of InGaAsN / GaAs quantum wells surrounding by GaAsN planes, allowing to achieve absorption relaxation time of few picoseconds. The SESAM microcavity resonance was adjusted via a selective etching of phase layers specifically designed to control the magnitude of both the modulation depth and the intra cavity group delay dispersion of the device.Finally, assembling VECSEL and SESAM chips in a cavity, we observe experimentally that the mode-locked pulse duration could be reduced from several picoseconds to less than one picosecond when the resonance and group delay dispersion of the SESAM microcavity are tuned.