Universiẗat, Diss., 1998--Kaiserslautern.

Techn. Hochsch., Diss., 2000--Aachen.

Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal oxidation of silicon describing the oxide thickness versus oxidation time relationship with very good agreement for oxide thicknesses of more than 23 nm. Their approach named as general relationship is the basis of many similar investigations. However, measurement results show that the DG-model does not apply to very thin oxides in the range of a few nm. Additionally, it is inherently not self-consistent. The aim of this paper is to develop a self-consistent model that is based on the continuity equation instead of Fick’s law as the DG-model is. As literature data show, the relationship between silicon oxide thickness and oxidation time is governed—down to oxide thicknesses of just a few nm—by a power-of-time law. Given by the time-independent surface concentration of oxidants at the oxide surface, Fickian diffusion seems to be neglectable for oxidant migration. The oxidant flux has been revealed to be carried by non-Fickian flux processes depending on sites being able to lodge dopants (oxidants), the so-called DOCC-sites, as well as on the dopant jump rate.

Studying the dynamic characteristics and evolution laws of the ballast bed under low-temperature, rain and snow environments has practical significance for the driving stability of railways in alpine. In this paper, a full-scale ballasted track model was constructed in a programmable temperature control laboratory, and the frequency response function (FRF) curves of the ballast bed under different temperature and humidity conditions were measured. Then the vibration characteristics and the evolution laws of the ballast bed under different conditions were analyzed. The longitudinal transfer behavior and the dissipation of the vibration energy in the ballast bed under different humidity and temperature environments were discussed combined with the finite element method. The results show that the influence of temperature on the vibration characteristics of the ballast bed is not significant in the dry and water-rich environments, but the vibration characteristics of the ballast bed in the frozen environment change dramatically with the decrease of temperature. The vibration energy is harder to dissipate in the frozen ballast bed than in the dry and water-rich ballast beds, and the frozen ballast bed is more prone to be sudden damaged when a train passes due to the significant increase in its stiffness. Thus, the performance monitoring and emergency maintenance of the ballast bed in those environments should be strengthened.

Network softwarization plays a significantly important role in the development and deployment of the latest communication system for 5G and beyond. A more flexible and intelligent network architecture can be enabled to provide support for agile network management, rapid launch of innovative network services with much reduction in Capital Expense (CAPEX) and Operating Expense (OPEX). Despite these benefits, 5G system also raises unprecedented challenges as emerging machine-to-machine and human-to-machine communication use cases require Ultra-Reliable Low Latency Communication (URLLC). According to empirical measurements performed by the author of this dissertation on a practical testbed, State of the Art (STOA) technologies and systems are not able to achieve the one millisecond end-to-end latency requirement of the 5G standard on Commercial Off-The-Shelf (COTS) servers. This dissertation performs a comprehensive introduction to three innovative approaches that can be used to improve different aspects of the current software-driven network data plane. All three approaches are carefully designed, professionally implemented and rigorously evaluated. According to the measurement results, these novel approaches put forward the research in the design and implementation of ultra-reliable low-latency, energy-efficient and computing-first software data plane for 5G communication system and beyond.

This thesis concentrates on advancing the thermal atom layer deposition (ALD) of Sb2Te3 and related multilayered metal chalcogenide thin films. It involves depositing a sub-monolayer of the target compound during each ALD cycle through successive, separated, and self-limiting gas-solid reactions between typically two gaseous reactants. The low deposition temperatures facilitate the creation of unconventional combinations of multilayers in distinct thermodynamic regimes. The well-defined chemical reactions inherent in ALD processes yield layers with ideal stoichiometry, and subsequent heat treatment enhances crystallite size and interface quality. Various methodologies have been explored to manipulate the optical and electrical properties of these thin films, demonstrating the capacity to tune their electrical and thermal transport properties using ALD.:Abstract Table of Contents Acknowledgments 1. Introduction 2. Background and Motivation 2.1. Basic Features of ALD 2.2. ALD of Metal Chalcogenides 2.3. Functional Properties 2.3.1. Photoresponse Effect 2.3.2. Thermoelectric Effect 2.4. State-of-art in Sb2Te3 and Related Multilayers 3. Experimental Techniques 3.1. Thin Films and Devices Preparation 3.2. Transport Property Evaluation 4. Wafer-Scale Growth of Sb2Te3 for Photodetectors 4.1. Microstructure Characterization 4.2. Rectifying Behaviour 4.3. Photoresponse Behaviour 4.4. DFT Calculation 4.5. High Yield Integration 4.6. Conclusion 5. Sb2Te3 with Insulator SbOx Layer 5.1. Microstructure Characterization 5.2. Sb2Te3 with Single-cycle of SbOx 5.3. Sb2Te3 with Multi-cycles of SbOx 5.4. Comparison of TE Performance 5.5. Conclusion 6. Sb2Te3 with Semiconductor Sb2Se3 Layer 6.1. Microstructure Characterization 6.2. Transport Properties 6.3. Thermal Conductivity and zT Values 6.4. Conclusion 7. Conclusion and Outlook Appendix: Wafer-Scale Growth of Sb2Te3 for Photodetectors Bibliography

We report experimentally results on the low temperature properties of two classes of materials with a special emphasizes near the QCP induced by substitution and magnetic 1.field: (1) the HF systems YbRh2(Si0.95Ge0.05)2, Yb1-yLayRh2Si2 (y = 0.05, 0.1),and YbIr2Si2 with tetragonal structures and CeIn3-xSnx (x = 0.55, 0.6, 0.65, 0.7, 0.8) with cubic structure; (2) the quantum spin systems: Cs2CuCl4 and Cs2CoCl4. In all the HF compounds we have observed NFL behavior in zero magnetic field close to the QCP. The La substituted system does not show an antiferromagnetic (AFM) transition down to the lowest accessible temperature (0.03 K) while in YbRh2(Si1-xGex)2 with x = 0 and x = 0.05 AFM transitions occur at TN =0.07 K and 0.02 K, respectively. For Yb0.9La0.1Rh2Si2 we observe below 0.07 K saturation of DeltaC/T indicating clearly a LFL state for this concentration. For YbIr2Si2, DeltaC/T saturates below 0.5 K. In contrast to the Yb based compounds in the vicinity of the QCP, CeIn3-xSnx shows no evidence of a divergence in Delta C/T, with B or with x. Furthermore, we used specic heat measurements in the mK temperature range and at high fields (up to 12 T) to probe the phase diagrams in the low dimensional quantum antiferromagnets Cs2CuCl4 and Cs2CoCl4. In applied magnetic field, we have presented experimental evidence that in Cs2CuCl4 the field dependence of the critical temperature Tc(B) ~ (Bc-B)^1-Phi close to the critical field Bc = 8.51 T is well described with Phi=1.5. This is in very good agreement with the exponent expected in the mean-field approximation and support the notion of a Bose-Einstein condensation of magnons in Cs2CuCl4.

Die Abgasturboaufladung erweist sich als sinnvolles Hilfsmittel den Kraftstoffverbrauch eines Hubkolbenverbrennungsmotors bei gleichbleibender Fahrdynamik zu verringern und somit die Effizienz des Motors zu erhöhen. Zur optimalen Nutzung der im Abgas enthaltenen Energie werden Abgassysteme moderner Pkw – Motoren äußerst kompakt ausgeführt, um der Abgasturboladerturbine ein möglichst hohes Enthalpiegefälle zur Verfügung zu stellen. Diese Umstände, sowie zunehmend kleinere Zylinderzahlen mit großen Zündabständen führen dazu, dass sich die Eintrittsbedingungen von Radialturbinen von Abgasturboladern heutiger Motoren periodisch ändern. Die Strömungsmaschine kann aufgrund ihrer Trägheit dem Druckanstieg nicht unverzögert folgen und wird vorwiegend bei niedrigen Schnelllaufzahlen betrieben. Die Entwicklung von Abgasturboladern und deren Anpassung an den Verbrennungsmotor erfolgen überwiegend auf Grundlage von messtechnisch ermittelten Kennfeldern von Verdichter und Turbine. Diese werden an stationär betriebenen Heißgasprüfständen ermittelt. Aufgrund der stationären Leistungsbilanz zwischen beiden Strömungsmaschinen an diesen Prüfständen beschreiben stationär gemessene Turbinenkennfelder nicht den gesamten motorrelevanten Betriebsbereich der Turbine. Für die Entwicklung innovativer Turboladerturbinen sind Untersuchungen der Turbinenwirkungsgrade und Durchsatzkennzahlen in diesen Betriebspunkten essentiell. Zur Untersuchung von Wechselwirkungen zwischen aufgeladenen Verbrennungsmotoren und Aufladesystemen stellt die Motorprozessrechnung eine wichtige Technologie dar. Die numerische Beschreibung des Turboladerverhaltens im Motorbetrieb erfolgt ebenfalls auf Basis von gemessenen Turboladerkennfeldern. Aufgrund des eingeschränkten Messbereichs der Turbinenkennfelder werden diese stark extrapoliert und beschreiben das thermodynamische Verhalten der Turboladerturbine fragwürdig. Die vorliegende Arbeit stellt ein neues Verfahren an einem erweiterten Heißgasprüfstand zur Vermessung und Untersuchung von Turboladerturbinen in motorrelevanten Betriebszuständen vor. Parallel wird ein Berechnungsmodell entwickelt, um Messergebnisse zu plausibilisieren und die numerische Beschreibung instationärer Turbinenströmungen zu untersuchen. Die Methode basiert auf der Ausnutzung zusätzlicher Beschleunigungsleistung zur Erhöhung der Aufnahme der Turbinenleistung, um niedrigere Schnelllaufzahlen unter motorrealistischen Randbedingungen untersuchen zu können. Mit Hilfe eines geeigneten Druckverlaufes werden temporär stationäre Strömungszustände erzeugt, sodass thermodynamische Zustände in der Turbine zuverlässig beschrieben werden können. Ferner werden Betriebsbedingungen der Turbinenuntersuchung denen der Turboladerturbine im Motorbetrieb angepasst. Kurzzeitig stellen sich quasi-stationäre Zustände ein, woraufhin phasenkorrigierte Messgrößen die Strömung in den Schaufelkanälen der Turbine belastbar beschreiben. Durch Variation der pulsierenden Strömung können Wirkungsgrad- und Massendurchsatzkennfelder mit hoher Abtastrate erweitert werden, wodurch verlässliche Interpolationen der Turbinenkennfelder bei niedrigen Laufzahlen möglich sind. Am Heißgasprüfstand lassen sich Turbineneintrittstemperatur, Druckamplitude und mittleres Druckverhältnis mit speziellen Impulsgeneratoren einstellen. Auch eine instationäre Massenstrommessung und Temperaturmessung ist möglich. Die instationäre Messmethode bildet eine Synthese mit stationären Turbinenvermessungen und deckt einen Großteil des Turbinenbetriebes aufgeladener Hubkolbenverbrennungsmotoren ab. Damit hat dieses Verfahren das Potential Turboladerkennfelder die am stationären Heißgasprüfstand ermittelt wurden sinnvoll zu ergänzen. Ergebnisse der neuen Messmethode werden mit Resultaten äquivalenter Simulationsrechnungen auf Grundlage stationär und instationär ermittelter Kennfelder verglichen. Auf Basis erweiterter Turbinenkennfelder können Wechselwirkungen zwischen dem Verbrennungsmotor und dem Aufladeaggregat mit Hilfe der Motorprozessrechnung genauer untersucht werden. Dies ermöglicht eine ideale Anpassung des Abgasturboladers an den Motor, wodurch Effizienz und Dynamik verbessert sowie Abgasemissionswerte des Antriebes reduziert werden können.

No description available.

Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal oxidation of silicon describing the oxide thickness versus oxidation time relationship with very good agreement for oxide thicknesses of more than 23 nm. Their approach named as general relationship is the basis of many similar investigations. However, measurement results show that the DG-model does not apply to very thin oxides in the range of a few nm. Additionally, it is inherently not self-consistent. The aim of this paper is to develop a self-consistent model that is based on the continuity equation instead of Fick’s law as the DG-model is. As literature data show, the relationship between silicon oxide thickness and oxidation time is governed—down to oxide thicknesses of just a few nm—by a power-of-time law. Given by the time-independent surface concentration of oxidants at the oxide surface, Fickian diffusion seems to be neglectable for oxidant migration. The oxidant flux has been revealed to be carried by non-Fickian flux processes depending on sites being able to lodge dopants (oxidants), the so-called DOCC-sites, as well as on the dopant jump rate.