Diploma thesis is intended on a polycrystalic diamond and a pocrystalic cubic boron nitride from the standpoint of their description, physical, mechanical and cutting properties, use and contemporary trends of development at renowned producers of tools and tool materials. The aim of the work was a complex working of conditions (type of cutting material, cutting conditions), which are recommended by choice producers for the effective turning applications their kind of superhard tool materials.

The master’s thesis is aimed at superhard cutting materials (polycrystalline diamond and polycrystalline cubic boron nitride) and their effective utilization. It describes the characteristics and production of these materials and evaluates product ranges of the most significant producers of tools and tool materials in given area. It further compares working conditions of selected world's producers which are related to the growing utilization of these materials in machining process. The thesis also deals with the cutting power of tools and provides a technical-economic assessment of the discussed issue.

n the first part of this diploma thesis there are described basic findings about superhard cutting materials (sorts, notation, structure, physical-mechanical properties, usage, production) and evaluates this tool of material from the aspect of cutting ability. The second part focused on complex data processing about assortment of superhard cutting materials of significant tools materials producers and comparison of work conditions (kind of machined ma-terials, cutting conditions), which are recommend for effective turning applica-tions by producers.

Diploma thesis is focused on cutting superhard materials (polycrystalline diamond and polycrystalline cubic boron nitride). It deals with physical, mechanical and cutting properties, production and effective use. Evaluative product range of superhard cutting materials of the prominent world producers in terms of cutting conditions and type of materials machined in turning.

This master’s thesis deals with the design of the switching power supply on the principle of high frequency converter. The goal of this thesis is construction of converter which is using GaN MOSFET transistors and SiC diodes for switching. The converter uses two switch forward power supply topology. Unusually high switching frequency was chosen for the design with power transformer with open magnetic core. The outcome of this work is functional converter which is primarily intended for educational and demonstrational purposes. Multiple parts of this converter are divided into individual blocks, which can be further used for construction of other types of switching converters.

Polystyrene block polyethyleneimine (PS-b-PEI) copolymer prepared by combining PS and poly(2-methyl-2-oxazoline) (PMeOx) segments together through two strategies. Furthermore, PMeOx block was hydrolysis to produce PEI block which linked with PS block. Macroinitiator route is one of these two ways to prepare PS-b-PEI copolymer. Polystyrene macroinitiator or poly(2-methyl-2-oxazoline) macroinitiator prepared through Nitroxide Mediate Radical Polymerization (NMRP) or Cationic Ring Opening Polymerization (CROP) respectively. Each macroinitiator has active initiated terminal group toward another block monomer. Second strategy based on coupling of PS segment with PMeOx block through “click” coupling chemistry. Polystyrene modified with terminal azide moiety are combined with PMeOx functionalized with alkyne group via 1,3 dipolar cycloaddition reaction “click reaction”. PS-b-PMeOx was hydrolysis in alkaline medium to produce amphiphilic PS-b-PEI copolymer. A set of block copolymer with different block ratios was prepared and investigated to select suitable block copolymer for further applications. Stichiometric PS-b-PEI copolymer selected to stabilize gold nanoparticle (Au NPs) in polymer matrix. PEI segment work as reducing and stabilizing agent of gold precursor in aqueous solution. Various concentrations of gold precursor were loaded and its effect on UVVIS absorbance, particle size and particle distribution studied. In addition, reduction efficiency of PEI block was determined from XPS measurements. The thickness of Au NPs/PS-b-PEI thin film was determined with a novel model for composite system. On the other hand, Gallium nitride quantum dots (GaN QDs) stabilized in PS-b-PEI copolymer after annealing. Our amphiphilic block copolymer exhibit nice thermal stability under annealing conditions. GaN QDs prepared in narrow nano-size with fine particle distribution. Blue ray was observed as an indication to emission activity of GaN crystal. Over all, PS-b-PEI copolymer synthesized through macroinitiator and click coupling methods. It was successfully stabilized Au NPs and GaN QDs in polymer matrix with controlled particle size which can be post applied in tremendous industrial and researcher fields.

This thesis deals with the analysis of nano-structured layers deposited by high-frequency magnetron sputtering on the monocrystalline silicon surface. The content of the work focuses on the magnetron sputtering application as an alternative method for passivation and antireflection layers deposition of silicon solar cells. The procedure of pre-deposite silicon surface cleaning by plasma etching in the Ar/H2 gas mixture atmosphere is suggested. In the next step the silicon nitride and aluminum nitride layers with hydrogen content in Ar/N2/H2 gas mixture by magnetron sputtering are deposited. One part of the thesis describes an experimental pseudo-carbide films deposition from a silicon target in the atmosphere of acetylene (C2H2). An emphasis is placed on the research of sputtered layers properties and on the conditions on the silicon-layer interface with the help of the standard as well as special measurement methods. Sputtered layers structure is analyzed by modern X-ray spectroscopy (XPS) and by Fourier infrared spectroscopy (FTIR). Optical ellipsometry and spectrophotometry is used for the diagnostic of the layers optical properties depending upon the wavelength of incident light. A special method of determining the surface lay-out of the charge´s carrier life in the volume and on the surface of silicon is employed to investigate the passivating effects of the sputtered layers.

Im Rahmen dieser Arbeit wurde der pseudo-halogenide Gasphasenepitaxie (PHVPE)-Prozess für die GaN-Kristallzüchtung entwickelt. Dieser Prozess basiert auf dem Zyanid als Transportmittel für Ga. Das HCN wurde aus der Reaktion von heißem NH3 entweder mit Graphit oder einem gasförmigen Kohlenstoffträger gewonnen. Als Quelle für reaktiven Stickstoff diente NH3. Im ersten Ansatz wurde ein Reaktor aus Graphit genutzt. In diesem Fall wurden Wachstumsraten von 60 um=h erreicht. Außerdem zeigte der Kristall eine geringe Perfektion mit hoher V-Grubendichte. Im zweiten Ansatz bestand der Reaktor aus mit pyrolytischem Graphit beschichteten Teilen. Diese Änderung des Konzeptes half die Kristallqualität zu verbessern, reduzierte aber gleichzeitig die Wachstumsrate drastisch, weil das Ga-transportmittel nicht mehr ausreichend zur Verfügung stand. Der neu konstruierte, graphitfreie Aufbau stellt den dritten Zugang zur PHVPE dar. In diesem Fall entsteht HCN während eines Degussa-Prozesses am Pt-Katalysator im Züchtungsreaktor. Zur Untersuchung der Reaktionswege wurde ein FTIR-basiertes insitu Abgasmesssystem entwickelt. GaN-Kristalle wurden auf Saphir und Ga2O3 Substraten, AlN/Al2O3 und GaN/Al2O3 Templates gezüchtet. Eine Selbstseparation wurde für dicke GaN-Schichten auf Ga2O3 erreicht. Die Proben wurden mit verschiedenen Methoden charakterisiert, z.B. mit der Röntgenbeugungs-Spektroskopie (XRD) und Elektronenrückstreubeugung (EBSD) für die Kristallperfektion und kristallographische Orientierung, der Transmissionselektronenmikroskopie (TEM) zur Untersuchung von Versetzungen und der Grenzfläche zwischen GaN und dem Ga2O3, der Rasterelektronenmikroskopie (REM) für die Oberflächenmorphologie und Schichtdicke, der energiedispersiven Röntgenspektroskopie (EDX) für die Kristallzusammensetzung, sowie der ex-situ und in-situ Abgasanalyse mit der Fourier-Transform-Infrarotspektroskopie (FTIR) zum Studium der Reaktionswege. / Within the frame of this work the pseudo halide vapor phase epitaxy process (PHVPE) was developed for GaN crystals growth. The process is based on cyanide as a transport agent for Ga. The source of HCN was the reaction of hot NH3 with either graphite or gaseous carbon precursor. Source of reactive nitrogen was NH3. In the first approach the reactor made of graphite was used. In this case growth rate of 60 um/h was achieved. Additionally, the crystals exhibit poor quality with high V-pit density. The second approach was to provide the reactor with pyrolytical boron nitride covered parts. Changing the concept helped to improve the crystals'' quality but simultaneously reduced drastically the growth rate, due to the lack of sufficient supply of Ga transport agent. Newly designed graphite free setup is used in the third approach for PHVPE. In this case, HCN forms during Degussa process on Pt catalyst, inside the growth reactor. For investigation of the reaction paths, an in-situ exhaust gas measurement system based on FTIR was developed. GaN crystals were grown on sapphire and Ga2O3 substrates, AlN/Al2O3 and GaN/Al2O3 templates. Self separation was achieved for thick GaN crystals grown on Ga2O3. The samples were characterized by various methods i.e. x-ray diffraction spectroscopy (XRD) and electron back scattering diffraction EBSD for crystal quality and crystallographic orientation, transmission electron microscopy (TEM) for investigating dislocations and interface between GaN and Ga2O3, scanning electron microscopy (SEM) for surface morphology and layer thickness, energy dispersive x-ray spectroscopy (EDX) for crystals compositions, ex-situ and in-situ exhaust gas analysis by Fourier transform infrared spectroscopy (FTIR) for investigation of the reaction paths.

Diese Arbeit befasst sich mit der Keimbildung und den Wachstumsmechanismen von GaN-Nanodrähten (NWs), die mittels Molekularstrahlepitaxie (MBE) hergestellt wurden. Die Hauptneuheiten dieser Studie sind der intensive Gebrauch von in-situ Messmethoden und der direkte Vergleich zwischen katalysatorfreien und katalysatorinduzierten NWs. In der MBE bilden sich GaN-NWs auf Silizium ohne Katalysator. Auf Saphir dagegen wachsen NWs unter den gleichen Bedingungen nur in der Anwesenheit von Ni-Partikeln. Die Nukleationsprozesse sind für beide Ansätze fundamental verschieden. In dem katalysatorinduzierten Ansatz reagiert Ga stark mit den Ni-Keimen, deren Kristallstruktur für das Nanodraht-Wachstum entscheidend sind, während in dem katalysatorfreien Ansatz bildet N eine Zwischenschicht mit Si vor der ausgeprägten GaN-Nukleation. Mittels beider Ansätze wachsen einkristalline wurtzite GaN-NWs in Ga-polarer Richtung. Allerdings sind unter denselben Wachstumsbedingungen die katalysatorinduzierten NWs länger als die katalysatorfrei gewachsenen und enthalten viele Stapelfehler. Im Vergleich sind die katalysatorfreien größtenteils defektfrei und ihre Photolumineszenz ist viel intensiver als jene der katalysatorinduzierten NWs. Alle diese Unterschiede können auf den Katalysator zurückgefürt werden. Die Ni-Partikel sammeln die an den Nanodraht-Spitzen ankommenden Ga-Atome ef?zienter ein als die unbedeckte oberste Facette im katalysatorfreien Fall. Außerdem können Stapelfehler sowohl aus der zusätzlichen Festkörperphase des Ni-Katalysators als auch aus der Verunreinigung der NWs mit Katalysatormaterial resultieren. Solch eine Kontaminierung würde schließlich nicht-strahlende Rekombinationszentren verursachen. Somit mag die Verwendung von Katalysatorkeimen zusätzliche Möglichkeiten bieten, das Wachstum von NWs zu kontrollieren. Jedoch sind sowohl die strukturellen als auch die optischen Materialeigenschaften der katalysatorfreien NWs überlegen. / This work focuses on the nucleation and growth mechanisms of GaN nanowires (NWs) by molecular beam epitaxy (MBE). The main novelties of this study are the intensive employment of in-situ techniques and the direct comparison of self-induced and catalyst-induced NWs. On silicon substrates, GaN NWs form in MBE without the use of any external catalyst seed. On sapphire, in contrast, NWs grow under identical conditions only in the presence of Ni seeds. The processes leading to NW nucleation are fundamentally different for both approaches. In the catalyst-assisted approach, Ga strongly reacts with the catalyst Ni particles whose crystal structure and phases are decisive for the NW growth, while in the catalyst-free approach, N forms an interfacial layer with Si before the intense nucleation of GaN starts. Both approaches yield monocrystalline wurtzite GaN NWs, which grow in the Ga-polar direction. However, the catalyst-assisted NWs are longer than the catalyst-free ones after growth under identical conditions, and they contain many stacking faults. By comparison the catalyst-free NWs are largely free of defects and their photoluminescence is much more intense than the one of the catalyst-assisted NWs. All of these differences can be explained as effects of the catalyst. The seed captures Ga atoms arriving at the NW tip more efficiently than the bare top facet in the catalyst-free approach. In addition, stacking faults could result from both the presence of the additional solid phase constituted by the catalyst-particles and the contamination of the NWs by the catalyst material. Finally, such contamination would generate non-radiative recombination centers. Thus, the use of catalyst seeds may offer an additional way to control the growth of NWs, but both the structural and the optical material quality of catalyst-free NWs are superior.

This diploma thesis deals with measuring touches problems in industrial metrology. Thesis describes adhesive wear and tear which is caused by measuring probes when dynamical measuring is being concluded. Measuring of damaged component made of silumin and its different changes of texture by different measuring probes are evaluated. Measuring touches are made of titanium nitride, silicon nitride, zirconium, bearing chrome steel, ruby, experimental composite material and nanocrystalline diamond.