With experimental realization of micro-structures, the feasibility of achieving high brightness, low efficiency droop blue LED was implemented based on InGaN/GaN micro-LED-pillar design. A significantly high current density of 492 A/cm2 in a 20 μm diameter (D) micro-LED-pillar was achieved, compared to that of a 200 μm diameter LED (20 A/cm2), both at 10 V bias voltage. In addition, an increase in sustained quantum efficiency from 70.2% to 83.7% at high injection current density (200 A/cm2) was observed in micro-LED-pillars in conjunction with size reduction from 80 μm to 20 μm. A correlation between the strain relief and the electrical performance improvement was established for micro-LED-pillars with D < 50 μm, apart from current spreading effect. The degree of strain relief and its distribution were further studied in micro-LED-pillars with D ranging from 1 μm to 15 μm. Significant wavenumbers down-shifts for E2 and A1 Raman peaks, together with the blue shifted PL peak emission, were observed in as-prepared pillars, reflecting the degree of strain relief. A sharp transition from strained to relaxed epitaxy region was discernible from the competing E2 phonon peaks at 572 cm-1 and 568 cm-1, which were attributed to strain residue and strain relief, respectively. A uniform strain relief at the center of micro-pillars was achieved, i.e. merging of the competing phonon peaks, after Rapid Thermal Annealing (RTA) at 950℃ for 20 seconds, phenomenon of which was observed for the first time. The transition from maximum strain relief to a uniform strain relief was found along the narrow circumference (< 2.5 μm) of the pillars from the line-map of Raman spectroscopy. The extent of strain relief is also examined considering the height (L) of micro-LED-pillars fabricated using FIB micro-machining technique. The significant strain relief of up to 70% (from -1.4 GPa to -0.37 GPa), with a 71 meV PL peak blue shift, suggested that micro-LED-pillar with D < 3 μm and L > 3 μm in the array configuration would allow the building of practical devices. Overall, this work demonstrated a novel top-down approach to manufacture large effective-area, high brightness emitters for solid-state lighting applications.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第19311号 / 工博第4108号 / 新制||工||1633(附属図書館) / 32313 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 髙岡 義寛, 教授 藤田 静雄 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

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Over the past decades, integrated photonics has revolutionized the way we generate and manipulate light, employing micro- and nanoscale structures to shrink full optical systems into chips smaller than a fingernail. By leveraging the infrastructure of semiconductor foundries and fabrication processes, the development and deployment of integrated photonic technologies has been greatly accelerated. The main focus has been in applications for infrared light, such as optical interconnects and communication. Nevertheless, photonic integrated circuits (PICs) have quickly found applications in many other fields, including sensing, ranging, imaging, quantum technologies, biomedicine, spectroscopy, microwave generation, astrophysics, and displays. However, many of these technologies require light at visible wavelengths, where PIC technology is still in its infancy. Visible-light photonics presents several additional and stricter challenges when compared the infrared portion of the spectrum. First, laser sources are not as developed or available. Second, the sensitivity of devices to fabrication variations and the coupling losses are intensified. Third, the range of transparent materials available for waveguiding is more limited, and their technology is not as mature. Lastly, techniques that work well in the infrared spectrum are not as effective in the visible range due to the remarkably different material properties in this spectral window.In this thesis, we explore integrated photonics in the visible spectrum and focus on solving two of its main challenges: the lack of high-performance laser sources, and the high losses of PICs. We develop a low loss, high-confinement silicon nitride (SiN) platform and use it to demonstrate high-performance visible-light lasers from near-ultraviolet (near-UV) to near-infrared (near-IR), to probe the limits of absorption and scattering across the visible spectrum, and to generate multi-octave frequency combs with simultaneous infrared and visible light of all colors of the rainbow. Since our SiN platform is compatible with current photonic foundries, our work lays the foundation for fully-integrated, dense and scalable visible-light PIC systems that combine high-performance lasers and ultra-low loss devices. We envision such chip-scale platform to not only transform existing technologies, but to also enable a whole new generation of applications that have so far been impossible, causing tremendous impact in science, medicine and industry.

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Hydrogen is a clean and sustainable form of carrier of energy that can be used in mobile and stationary applications. At present hydrogen is produced mostly from fossil sources. Solar photoelectrochemical processes are being developed for hydrogen production. Storing hydrogen can be done in three main ways: in compressed form, liquid form and by chemical bonding. Near term spaceport operations are one of the prominent applications for usage of large quantities of liquid hydrogen as a cryogenic propellant. Efficient storage and transfer of liquid hydrogen is essential for reducing the launch costs. A Two Stage Reverse Turbo Brayton Cycle (RTBC) CryoCooler is being developed at University of Central Florida. The cryocooler will be used for storage and transport of hydrogen in spaceport and space vehicle application. One part in development of the cryocooler is to reduce the friction and wear between mating parts thus increasing its efficiency. Tribological coatings having extremely high hardness, ultra-low coefficient of friction, and high durability at temperatures lower than 60 K are being developed to reduce friction and wear between the mating parts of the cryocooler thus improving its efficiency. Nitrides of high-melting-point metals (e.g. TiN, ZrN) and diamond-like-carbon (DLC) are potential candidates for cryogenic applications as these coatings have shown good friction behavior and wear resistance at cryogenic temperatures. These coatings are known to have coefficient of friction less than 0.1 at room temperature. However, cryogenic environment leads to increase in the coefficient of friction. It is expected that a composite consisting of a base layer of a hard coating covered with layer having an ultra-low coefficient of friction would provide better performance. Extremely hard and extremely low friction coatings of titanium nitride, molybdenum disulphide, TiN/MoS2 bilayer coatings, DLC and DLC/MoS2 bilayer coatings have been chosen for this application. TiN film was deposited by reactive DC magnetron sputtering system from a titanium target and MoS2 film was deposited by RF magnetron sputtering using a MoS2 target. Microwave assisted chemical vapor deposition (MWCVD) technique was used for preparation of DLC coatings. These composite coatings contain a solid lubricating phase and a hard ceramic matrix phase as distinctly segregated phases. These are envisioned as having the desired combination of lubricity and structural integrity. Extremely hard coatings of TiN and DLC were chosen to provide good wear resistance and MoS2 was chosen as the lubricating phase as it provides excellent solid lubricating properties due to its lamellar crystal structure. This thesis presents preparation; characterization (SEM and XRD), microhardness and tribological measurements carried out on TiN and TiN/MoS2 coatings on aluminum and glass substrate at room temperature. It also presents initial development in preparation of DLC coatings.

Nitride semiconductor materials have been used in a variety of applications, such as LEDs, lasers, photovoltaic cells and medical applications. If incandescent bulbs could be replaced by white GaN LEDs, they would not only provide compactness and longer lifetime, but this would also result in huge energy savings. A renewed interest in InGaN emerged recently after it was discovered that the band gap for InN is 0.7eV, instead of the previously published value of 1.9eV. Thus InGaN solid solutions cover almost the whole visible spectrum, from a band gap of 3.34eV for GaN and 0.7eV for InN. Hence, InGaN can have excellent applications for photovoltaic cells. The objective of this work was to investigate and search for new ways of synthesis of nitrides. We studied the thermodynamics and evaluated chemical compatibilities for the growth of AlN, GaN, InN and their solid solutions from metallic solvents. The compatibility between potential substrate, crucible and solvent materials and various growth atmospheres was evaluated from Gibbs free energy calculations. Most of the nitride synthesis experiments performed by other groups were at higher temperatures (around 2,000C) and pressures up to 1GPa using different growth methods. Therefore, their results could not be extrapolated to our growth system, as their growth conditions were significantly different from ours Moreover, to the best of our knowledge; no-one has ever evaluated such compatibilities by thermodynamic calculations. We used those calculations to design our experiments for further studies on nitrides. Experimentally, we encountered fewer issues such as corrosion problems than others observed with their growth procedures, because near-atmospheric pressures and temperatures not exceeding 1,000C could be used. Preliminary experiments were performed to confirm the thermodynamic computations and test the behavior of the chosen system. A suitable configuration was found that allowed to nucleate films of InGaN on the templates. Nitride templates or 'Buffer layers' were used to saturate the solution and grow the films. A relatively simpler configuration, to create a temperature gradient in the solution was used. Two templates were placed in the crucible, one at the top and the other one at the bottom. The temperature was raised to 950C and they were soaked there for 15-20hrs. After the growth the surface morphology was analyzed using an optical microscope and it was found to be entirely different for both the templates. The atoms from the top template dissolved and attached at the bottom template. This can be explained by the thermal gradient between the two templates: one at the bottom was at lower temperature than the top template, so there was diffusion from the top substrate towards the bottom one. AFM studies were carried out on the film to study the surface morphology of the top and the bottom templates. Growth hillocks having step height typically between 15 and 50 nm were observed. Such hillocks were not present on the templates before the experiment.

Two-dimensional (2D) layered hexagonal boron nitride (h-BN) has become a very popular material in nanoelectronics in recent years because of its extraordinary chemical stability and thermal conductivity [1]. Recently, h-BN is also commonly used as a dielectric material [2], and research in this area is still in its early stages. The commonly used methods for fabricating h-BN include mechanical exfoliation and chemical vapor deposition (CVD). CVD is a recognized industry-compatible method for producing large-area h-BN. However, studies have shown that multilayer h-BN grown by CVD is polycrystalline and contains multiple local defects [3]. These defects and inhomogeneity cannot be avoided and lead to small amounts of atom-wide amorphous regions that have weak dielectric strength [3]. Although the general characteristics of h-BN prepared by these two fabrication methods can be learned from different works in the literature, it is difficult to study the quality of h-BN without systematically comparing the differences between the two growth methods under the same experimental conditions and with large number of samples. This also makes it difficult for researchers to choose the best-quality h-BN. In this work, the morphological characteristics and electrical properties of mechanically exfoliated h-BN and CVD-grown h-BN from different sources have been compared under different conditions. Commercially available h-BN flakes mechanically exfoliated from NIMS h-BN bulk crystal show no leakage current at electrical fields up to 25.9 MV/cm, and above this applied electrical force, the size of the conductive spots is extremely small (1.99 ± 1.81 nm2). On the contrary, “monolayer” CVD-grown h-BN samples from Graphene Supermarket were shown to be amorphous in ~20% of their area, which makes them appear discontinuous from an electrical point of view, plus they contain large thickness fluctuations up to 6 layers. Moreover, in nanoelectronic measurements collected with a conductive atomic force microscope (CAFM) working in vacuum, mechanically exfoliated h-BN showed better electrical homogeneity and presented later dielectric breakdown compared to the h-BN samples fabricated by the CVD method.

Ternary III-nitride alloys have enabled the design of various devices ranging from optoelectronics to power electronics due to their tunable band gap. BxGa1-xN is a wide band gap semiconductor with applications in detecting devices, power electronics and light-emitting diodes. The band gap can be modulated by changing the Boron concentration. It can be grown by metal-organic chemical vapor deposition as a mixed thin film of wurtzite and zincblende structures. In this work, we investigate the structural and electronic properties of BxGa1-xN (x<0.2) by first-principles calculations for both the wurtzite and zincblende phases. The formation energies of Si and Mg impurities and of a Ga vacancy are also calculated. We find that the wurtzite structure is favored over the zincblende structure. Furthermore, the Si and Mg impurities have relatively low formation energies in their neutral state, which indicates compatibility with BxGa1-xN, while a Ga vacancy has very high formation energy, hence being less likely to form spontaneously. Moreover, in the charged states, the formation energy of Mg is reasonably low for most values of the Fermi level, while the formation energy of Si depends linearly on the Fermi level, indicating challenges in achieving n-type conductivity. For a Ga vacancy in a triple acceptor state, the formation energy is reasonably low close to the conduction band, therefore, Ga vacancies interfere with n-type conductivity.

Small scale renewable energy harvesting is an attractive solution to the growing need for power in remote technological applications. For this purpose, localized thermal gradients on-chip—created via radiative cooling—could be exploited to produce microscale renewable heat engines running on environmental heat. This could allow self-powering in small scale portable applications, thus reducing the need for non-renewable sources of electricity and hazardous batteries. In this work, we demonstrate the creation of a local thermal gradient on-chip by radiative cooling of a 90 nm thick freestanding silicon nitride nanomechanical resonator integrated on a silicon substrate at ambient temperature. The reduction in temperature of the thin film is inferred by tracking its mechanical resonance frequency, under high vacuum, using an optical fiber interferometer. Experiments were conducted on 15 different days during fall and summer months, resulting in successful radiative cooling in each case. Maximum temperature drops of 9.3 K and 7.1 K are demonstrated during the day and night, respectively, in close correspondence with our heat transfer model. Future improvements to the experimental setup could enhance the temperature reduction to 48 K for the same membrane, while emissivity engineering potentially yields a maximum theoretical cooling of 67 K with an ideal emitter. This thesis first elaborates a literature review on the field of radiative cooling, along with a theoretical review of relevant thermal radiation concepts. Then, a heat transfer model of the radiative cooling experiment is detailed, followed by the experimental method, apparatus, and procedures. Finally, the experimental and theoretical results are presented, along with future work and concluding remarks.