One of the poly-Si thin-film cells developed at the University of New South Wales (UNSW) is the EVA cell. In this work, SiN films for EVA cells as an antireflection/barrier coating were investigated. In addition, the effect of hydrogenation pre-treatment of solid phase crystallisation (SPC) on grain size and open-circuit voltage (Voc) was investigated. The SiN films deposited by PECVD were examined for uniformity of the thickness and the refractive index of the films across the position of the samples in the PECVD deposition system. A spectrophotometric analysis was used to determine these film properties. It was found that these properties were very uniform over the deposition area. Good repeatability of the depositions was also observed. A series of SiN film depositions by reactive sputtering were also performed to optimize the deposition process. Parameters adjusted during the deposition were nitrogen flow rate, substrate bias, and substrate temperature. By investigating the deposition rate, refractive index, and surface roughness of the films, the three deposition parameters were optimised. The effects of post SiN deposition treatments (a-Si deposition, SPC, RTA, and hydrogenation) on thickness and refractive index of both SiN films deposited by PECVD and reactive sputtering were investigated by using samples which have the same structure as the EVA cells. The thickness of the PECVD SiN films decreased about 6 % after all the treatments. On the other hand, the thickness reductions of the reactively sputtered SiN films were very small. The refractive index of the PECVD SiN films increased about 0.6 % after the treatments, whereas that of the reactively sputtered SiN films decreased 1.3 % after the treatments. As a possible method to improve the performance of EVA cells, hydrogenation of a-Si was investigated as a pre-treatment of SPC process. There were no obvious differences in the grainsize and the Voc of the EVA cells with and without the hydrogenation. Therefore it is likely that the hydrogenation pre-treatment of SPC does not have a beneficial effect on the performance of EVA cells.

Abstract not available

The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.

The deformation mechanisms and contact response of TiN-based thin films deposited onto a soft substrate using a physical vapour deposition (PVD) technique is still an area of both technological importance and considerable discussion. These coatings are commonly applied to various kinds of steel cutting tools, creating surfaces with enhanced tribological properties. However, no extensive systematic study of the deformation mechanisms in these thin film systems has been performed to date. In the present study, the effect of the coating microstructure, indenter geometry, coating thickness and substrate hardness on the deformation mechanisms in both TiN and TiAlN coatings of varying thickness deposited onto ductile steel substrates has been investigated using a combination of nanoindentation and microstructural analysis, including focused ion beam (FIB) milling and transmission electron microscopy (TEM). Different modes of cracking, such as columnar and transverse cracking, as well as shear steps at the coating/substrate interface, were observed. The microstructure of the TiN coatings was found to be very important in controlling their modes of deformation. Thicker coatings were seen to contain more equiaxed grains, so less columnar shearing occurred and inclined cracks were found to be a more dominant fracture type in the thicker coating. Also, it was found that soft substrates absorbed most of the energy from indentation by plastic deformation. It was found that both the TiN and TiAlN/TiN dual-layer coatings exhibited broadly similar mechanisms of deformation. The epitaxial interface between the TiAlN and TiN in the dual-layer coating did not appear to affect the deformation behaviour. As a further investigation of the overall deformation behaviour for the coating/substrate systems studied, a DualBeam FIB was used to generate three dimensional images of the indented regions which provided additional information on the crack morphology. For the first time, a systematic study of the deformation behaviour of TiN and TiAlN coatings upon indentation has been carried out. FIB milling was demonstrated to be a highly appropriate technique for characterization of the deformation behaviour of these coatings, allowing detailed, high resolution microstructural investigations to be performed in both two and three dimensions.

This thesis employs experimental and theoretical methods to characterise carbon nitride solids and proposes a generalstructural model for amorphous carbon nitride (a-C:N). It finds that a-C:N deposited by several methods is essentially identical, with similar bonding environments for carbon and nitrogen atoms. Using evidence from several techniques, the saturation of nitrogen in an sp2 carbon matrix is discussed. The experimental studies on a range of carbon nitride solids show no evidence for a crystalline form of carbon nitride. In addition to the experimental characterisation of a-C:N, ab initio molecular dynamics were used to investigate bonding and structure in carbon nitride. These simulations show that the most common form of nitrogen bonding was three-fold sites with a lone pair of electrons. Two-fold nitrogen sites were also found in agreement with experimental findings. An increase of nitrogen in a-C:N decreases the sp3-carbon fraction, but this is not localised on the nitrogen and the effect is most severe at high densities. A simulation of a low density/high nitrogen content network shows that the nitrogen saturation seen experimentally may be due to the formation of N2 dimers and C-N molecules which are easily driven out of the structure. The ab initio simulations also explore the nature of charged nitrogen and carbon sites in a-C:N. An analysis based on Wannier Function centres provided further information about the bonding and allowed for a detailed classification of these sites. The removal of electrons from the networks caused structural changes that could explain the two-state conductivity in ta-C:N memory devices. Finally, a theoretical study of the electron energy-loss near-edge structure (ELNES) calculated using multiple scattering theory is presented. The calculated ELNES of diamond, graphite and boron, silicon and carbon nitride structures compare well to experiment and supports the experimental finding that no crystalline carbon nitride had (or has) been produced. These ELNES calculations will however, provide a means of identifying crystalline beta-C3N4 should it be synthesised.

<p>Metal forming is widely used in the industry to produce cans, tubes, car chassis, rods, wires etc. Forming certain materials such as stainless steel, aluminium and titanium, is often difficult, and problems associated with transfer of work material to the tool material are frequent. Transferred material may scratch and deform the following manufactured pieces, a phenomenon named galling. Lubricants can, to some degree, solve these problems. However, many forming oils are hazardous to the environment, and therefore it is highly desirable to replace them or get rid of them.</p><p>This thesis investigates the nature of the galling phenomenon and tries to explain under which conditions such problems arise. Dry sliding tests have been performed in a dedicated load-scanner equipment. Difficult work materials have been tested against tool materials under various conditions and the samples have then been studied by advanced analytical techniques, such as ESCA and TEM, to study the detailed tribological mechanisms occurring in the contact between work and tool material.</p><p>The general assumption is that material transfer only occurs when there is metal to metal contact. In this work it has been found that, for stainless steel, the oxide plays a very important role for the sticky behaviour of stainless steel, and that metal to metal contact is not a necessary condition for galling.</p><p>Several PVD-coated tool materials have been tested and it was found that vanadium nitride coatings can be tuned regarding their chemical composition, to be more galling resistant than conventional coatings.</p><p>The surface roughness of the tool material is very strongly coupled to the tools ability to resist galling. The smoother the tool surface, the less risk of material transfer and galling.</p><p>Some work materials, like aluminium and titanium, transfer to even the smoothest tool materials. A proposed explanation for this is that their oxides are much harder than the bulk material and the tool material matrix. When deforming the work material, the oxide will fracture into small hard scales, which can indent the tool material. Indented hard scales will then contribute to material transfer of more work material to the tool.</p>

Carbon is a fascinating element which can be observed in a large variety of morphologies and atomic structures due to its chemical ability to form different hybridizations. The present PhD thesis proposes the synthesis of several carbon-based materials using a unique and quite simple technique: the oxy-acetylene combustion flame method. From crystalline sp3- diamond to planar sp2- graphite, from the unidirectional nanotubes, needles and rods to bidimensional petals, a large variety of carbon materials are synthesized under the atmospheric pressure. These various carbon forms have been produced using a set of different experimental parameters. Both the input gas ratio and the substrate temperature are found to play a key role in the synthesis of these new carbon materials. The high quality of the graphitic phases can be correlated to the large acetylene content in the gas and to the high temperature of the substrate. Some specific morphologies such as petal-like single graphite crystals have been synthesized. Their sizes reach up to 20 mm. These bidimensional carbon materials are of particular importance to investigate fundamental physics in ideal low-dimensional systems. Polyhedral graphite crystals, which exhibit a unidirectional morphology, have also been produced. Their crystal structure is found to be highly graphitic although they display a cylindrical/polyhedral shape. Preliminary measurements of their field emission properties reveal a huge emission current, which is higher than the emission current obtained for multi-wall carbon nanotubes. The latter have also been synthesized in large amount and high quality using our oxy-acetylene combustion flame technique. At last, using again the same experimental set-up, a crystalline carbon nitride phase has been synthesized for the first time using a specific molecule called “melamine” as an organic precursor. Several experimental techniques, such as Energy Dispersive X-ray (EDX), X-ray Photoelectron Spectroscopy (XPS), Electron Energy Loss Spectroscopy (EELS), X-ray diffraction and Raman and infra-red spectroscopies have been used to analyze both the chemical composition and the crystalline structure of this new material, revealing a graphitic-C3N4 phase.

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN. / Singapore-MIT Alliance (SMA)

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 232-237).

Thesis (Ph. D.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.