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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

Photonic Implementation of an Instantaneous Frequency Measurement

Sarkhosh, Niusha, niusha.sarkhosh@rmit.edu.au January 2009 (has links)
With the rapid and ongoing developments in telecommunication and electronic warfare technology, faster and more flexible systems are in demand. Wideband signal processing is thus needed to implement such systems. Microwave photonics has been introduced as a tool for achieving such ultra broadband signal processing. Instantaneous Frequency Measurement (IFM) receivers play an important role in electronic warfare. They have been developed as a means of obtaining a rapid indication of the presence of a threat and to roughly identify the frequency of the threat signals. They also have the advantages of low-cost, compactness and moderate to good sorting capability in an interference-free environment. The main limitation of the traditional RF IFM receivers is constrained bandwidth. Microwave Photonic IFMs have been considered, but the main disadvantages of photonic realization of the recent IFM receiver is cost. This work aims to propose and demonstrate low-cost photonic IFM receivers with a broad frequency measurement range. The proposed methods are based on the use of photonic mixing to down-convert the RF modulated optical signals to DC. In a RADAR warning receiver, usually a bank of IFMs is required. Increasing the numbers of IFMs requires an increase in the number of photo-detectors. Thus if low-frequency, low-cost detectors can be used, then the net system cost will be reduced significantly. The concept is proven and the issues arising are analyzed. In the proof of concept system, measurement of the RF frequency required advance knowledge of the RF power. Secondly, the use of co-axial RF cables as delay elements limited the bandwidth and increased bulk. Using a photonic hybrid approach to achieve orthogonal measurements was demonstrated as a means of dentifying both RF frequency and power simultaneously and independently. Employing all optical mixing removed the need for co-axial RF cables delays using non-linear optical devices such as Semiconductor Optical Amplifier (SOA) and Highly Non-Linear Fiber (HLNF). The last investigation is to improve the sensitivity of the implemented IFM system. The sensitivity of the implemented system is characterized first and a lock-in technique is employed to improve the sensitivity of the system. The final system achieves a sensitivity of -41 dBm which is comparable with the traditional RF IFM receivers.
22

Medição e simulação de conversor em comprimento de onda com amplificador optico a semicondutor / Measurements and simulations of wavelenght converter based on semiconductor optical amplifier

Ribeiro, Napoleão dos Santos 06 August 2006 (has links)
Orientadores: Evandro Conforti, Cristiano de Melo Galle / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-07T05:52:16Z (GMT). No. of bitstreams: 1 Ribeiro_NapoleaodosSantos_M.pdf: 3461536 bytes, checksum: a62ed88dd69c1d4ba69dd6875b34f001 (MD5) Previous issue date: 2006 / Resumo: A utilização de redes ópticas com multiplexação de comprimento de onda (WDM) é uma solução para o aumento na taxa de transferência de dados em sistemas de telecomunicações. Para um bom funcionamento de tais redes, a utilização de um conversor em comprimento de onda com amplificador óptico a semicondutor é importante, pois facilita o processamento totalmente no domínio óptico, bem como uma maior flexibilidade na utilização de sinais em diferentes comprimentos de onda. Desta forma, apresenta-se, neste trabalho, um estudo de um conversor em comprimento de onda via modulação cruzada de ganho baseado em um amplificador óptico a semicondutor (SOA). Um estudo teórico do SOA e do conversor é apresentado, seguindo-se do estudo de montagens experimentais que permitem a obtenção de bons resultados para a conversão, comprovados com a comparação com resultados simulados. Para a realização da simulação, são estudados certos parâmetros e a relação destes com a conversão. Os resultados apresentados neste trabalho estão coerentes com os da literatura especializada. Melhorias no desempenho do conversor são apresentadas, bem como sugestões para trabalhos futuros / Abstract: The use of wavelenght-division multiplex (WDM) optical networks is a solution for the data-rate increasing in telecommunications systems. For a good performance of such networks, the use of wavelength converter based on semiconductor optical amplifier is important, since this one allows all-optical signal processing, as well as more flexibility in the spectral use of optical signals, assigned at different wavelengths. Therefore, the study of wavelength converters based on cross-gain modulation of semiconductor optical amplifier (SOA) is presented. The SOA and its converter¿s theoretical study are presented, followed by the experimental set-up for the conversion, and last by the comparison with simulated results. For simulation procedures, the study of certain parameters and its relation to conversion efficiency is carried out. Performance improvements in the converter operation are presented as well as indications for further works / Mestrado / Telecomunicações e Telemática / Mestre em Engenharia Elétrica
23

Modelling and Characterization of Laterally-Coupled Distributed Feedback Laser and Semiconductor Optical Amplifier

Nkanta, Julie Efiok January 2016 (has links)
There is an increasing need for tuneable spectrally pure semiconductor laser sources as well as broadband and polarization insensitive semiconductor optical amplifiers based on the InGaASP/InP material system, to be monolithically integrated with other active and passive components in a photonic integrated circuit. This thesis aims to contribute to finding a solution through modelling, experimental characterization and design improvements. In this thesis we have analyzed laterally-coupled distributed feedback (LC-DFB) lasers. These lasers have the gratings etched directly out of the ridge sidewalls thus lowering the cost associated with the re-growth process required if the gratings were otherwise embedded above the active region. The performance characteristics are analyzed for the LC-DFB lasers partitioned into 1-, 2-, and 3-, electrodes with individual bias control at various operating temperatures. The laser exhibits a stable single mode emission at 1560 nm with a current tuning rate of ~14 pm/mA for a tuning of 2.25 nm. The side modes are highly suppressed with a maximum side-mode suppression ratio of 58 dB. The light-current characteristics show a minimum 40 mA threshold current, and power saturation occurring at higher injection currents. The linewidth characteristics show a minimum Lorentzian linewidth of 210 kHz under free-running and further linewidth reduction under feedback operation. The multi-electrode LC-DFB laser devices under appropriate and selective driving conditions exhibit a flat frequency modulation response from 0 to above 300 MHz. The multi-electrode configuration can thus be further exploited for certain requirements. Simulation results and design improvements are also presented. The experimental characterization of semiconductor optical amplifier (SOA) and Fabry-Perot (FP) laser operating in the E-band are also presented. For the SOA, the linear vertical and horizontal states of polarization corresponding to the transverse electric (TE) and transverse magnetic (TM) modes were considered. For various input power and bias, performance characteristics shows a peak gain of 21 dBm at 1360 nm, gain bandwidth of 60 nm and polarization sensitivity of under 3 dB obtained for the entire wavelength range analyzed from 1340 to 1440 nm. The analysis presented in this thesis show good results with room for improvement in future designs.
24

Impact de la nanostructuration des fibres dopées Erbium sur leurs performances : application aux contraintes du spatial / Impact of the Silica Nanostructuration on Erbium Doped Fiber for Space Applications

Thomas, Jérémie 13 December 2013 (has links)
Ce travail de thèse porte sur l'étude de l'impact de la nanostructuration de la matière sur le comportement des fibres dopées Erbium en environnement radiatif tel que l'Espace. Cette étude est motivée par le fait qu'il n'existe pas de fibre dopée Erbium qualifiée pour le spatial, rendant l'AOFD indisponible pour ces applications, réduisant fortement l'intérêt de l'ensemble de la technologie WDM pour les satellites. Ainsi nous avons testé plusieurs fibres basées sur des technologies différentes dans le but d'évaluer leurs comportements sous radiations gamma. Nous avons ainsi défini un critère objectif pour la sélection des fibres dopées Erbium, et avons montré des éléments permettant de durcir des fibres co-dopées Aluminium en se basant uniquement sur des paramètres de conception. Ainsi, nous avons démontré une fibre durcie aux radiations à base de nanoparticules de silice dopées Erbium, montrant une perte de puissance de l'ordre de 1 dB en fin de mission typique d'un satellite. L'accent a également été mis sur la modélisation de l'AOFD en proposant un modèle évolué prenant en compte des effets non linéaires liés à la complexité de la spectroscopie de l'ion Erbium. Ce modèle a été complété par une prise en compte de l'effet des irradiations et de la guérison optique en utilisant un modèle de proche de celui développé par R. Chen. Nous avons pu noter la grande importance de l'effet de la guérison optique sur les performances de l'AOFD en fin de vie. / This thesis focuses on the impact of nanostructuration on the performance of Erbium Doped Fiber in severe environment like Space. This study is motivated by the fact that no on-the-shell Erbium Doped Fiber can satisfy the space requirement, disabling the availability of the AOFD and stongly limiting the interest of the WDM technology for satellites. Several fiber based on different technologies have been tested in order to check their behavior under gamma radiations. We have defined an objective criterion for the selection of erbium doped fibers, and showed elements for hardening aluminum co-doped fibers, based solely on design parameters. In this way, we brought to the fore a radiation hardened fiber, based on silica nanoparticles, exhibiting a power decrease of 1 dB after a typical space mission. We also focused on EDFA modeling by proposing an evolved model taking into account non-linear effects due to the complex spectroscopy of Erbium. This model is completed by including irradiation effects thanks to a model such as Chen's one. The photobleaching effect that has been found to be strong is also considered.
25

Optické zesilovače pro metropolitní a přístupové sítě / Optical amplifiers for metropolitan and access networks

Čech, Martin January 2011 (has links)
Aim of this Master´s thesis is to describe and compare most common types of optical amplifiers used in today’s networks. The first section focuses on problematic of optical transmissions and phenomenon which cause degradation of transmitted signal. It is also explained in this section why there is a need to deploy optical amplifiers. Next section describes basic principles, structure and properties of individual types of optical amplifiers. Following section describes simulations which were made to compare the performance of transmission systems with each individual type of optical amplifier. The last section contains a design of optical metropolitan network with wavelength multiplex. Based on simulations from preceding part best amplifier type and optimal amplifier placement was selected. Functionality of the design was tested and simulations described in final section.
26

Low-loss tellurium oxide devices integrated on silicon and silicon nitride photonic circuit platforms

Frankis, Henry C. January 2021 (has links)
Silicon (Si) and silicon nitride (Si3N4) have become the dominant photonic integrated circuit (PIC) material platforms, due to their low-cost, wafer-scale production of high-performance circuits. However, novel materials can offer additional functionalities that cannot be easily accessed in Si and Si3N4, such as light emission. Tellurium oxide (TeO2) is a novel material of interest because of its large linear and non-linear refractive indices, low material losses and large rare-earth dopant solubility, with applications including compact low-loss waveguides and on-chip light sources and amplifiers. This thesis investigates the post-processing integration of TeO2 devices onto standardized Si and Si3N4 chips to incorporate TeO2 material advantages into high-performance PICs. Chapter 1 introduces the state-of-the-art functionality for various integrated photonic materials as well as methods for integrating multiple materials onto single chips. Chapter 2 presents the development of a high-quality TeO2 thin film fabrication process by reactive RF sputtering, with material refractive indices of 2.07 and optical propagation losses of <0.1 dB/cm at 1550 nm. Chapter 3 investigates a conformally coated TeO2-Si3N4 waveguide platform capable of large TeO2 optical confinement and tight bending radii, characterizing fiber-chip edge couplers down to ~5 dB/facet, waveguide propagation losses of <0.5 dB/cm, directional couplers with 100% cross-over ratio, and microresonators with internal Q factors of 7.3 × 105. In Chapter 4 a spectroscopic study of TeO2:Er3+-coated Si3N4 waveguide amplifiers was undertaken, with internal net gains of up to 1.4 dB/cm in a 2.2-cm-long waveguide and 5 dB total in a 6.7-cm-long sample demonstrated, predicted to reach >10 dB could 150 mW of pump power be launched based on a developed rate-equation model. Chapter 5 demonstrates TeO2-coated microtrench resonators coupled to silicon waveguides, with internal Q factors of up to 2.1×105 and investigates environmental sensing metrics of devices. Chapter 6 summarizes the thesis and provides avenues for future work. / Thesis / Doctor of Philosophy (PhD)
27

Semiconductor Optical Amplifier as a Phase Modulator for Short-Pulse Synthetic Aperture Ladar and Vibrometry

Carns, Jennifer 11 May 2012 (has links)
No description available.
28

Study of up & down conversion technique by all-optical sampling based on SOA-MZI / Etude d'une technique de conversion vers les hautes et basses fréquences par échantillonnage tout-optique à base d'un SOA-MZI

Termos, Hassan 27 February 2017 (has links)
La conversion de fréquence est une fonction clef présente dans divers contextes, particulièrement dans les systèmes mixtes photoniques-hyperfréquences. Aujourd’hui, la suprématie des réseaux optiques pour le transport de données à haut débit sur de grandes distances incite à l’intégration de telles fonctions dans le domaine optique afin de bénéficier des faibles pertes, larges bandes passantes, faibles poids et tailles propres aux technologies optiques. Dans ce travail, nous étudions un mélangeur tout-optique utilisant un composant SOA-MZI (Semiconductor Optical Amplifier Mach-Zehnder Interferometer) et une technique d’échantillonnage permettant la conversion vers les hautes et les basses fréquences. Le principe du mélange exploite les caractéristiques spectrales d’un signal échantillonné pour lequel des répliques du signal d’origine existent à différentes autres fréquences. Utiliser une telle technique pour la conversion de fréquences offre deux avantages : la conversion vers les hautes et les basses fréquences utilise la même configuration du mélangeur et la fréquence de l’oscillateur local peut être inférieure à la gamme des fréquences visées.L’implémentation d’une telle technique d’échantillonnage nécessite un interrupteur optique contrôlé optiquement.Comme cela est montré dans ce travail, un SOA-MZI peut jouer ce rôle. Selon la phase relative entre ses bras, un interféromètre Mach-Zehnder (MZI) peut transmettre ou non un signal optique d’entrée. En plaçant un SOA dans chaque bras de la structure MZI, la modulation croisée de la phase qui existe au sein d’un SOA est mise à profit pour contrôler l’état de l’interféromètre. Contrôlé par une source impulsionnelle optique, cet interrupteur optique permet d’échantillonner un signal optique porteur de données à modulation complexe. La conversion de fréquence de signaux mono et multi-porteuses dans le domaine 0,5-39,5 GHz a été obtenue avec succès. Par utilisation d’une configuration différentielle du SOA-MZI, des conversions vers les hautes et les basses fréquences jusqu’à un débit de 1 Gb/s ont pu être réalisées. / Frequency mixing is a key function existing in different systems, especially in mixed photonic-microwave ones. Today, the supremacy of optical networks to carry high bitrate data over large distances motivates the optical implementation of such functions to benefit from the low loss, high bandwidth, low size and weight of optical technologies. In this work, we study a photonic mixer based on a SOA-MZI (Semiconductor Optical Amplifier Mach-Zehnder Interferometer) device and a sampling technique allowing both conversion towards high and low frequencies.The involved mixing principle exploits the spectral characteristics of a sampled signal in which replicas of the original spectrum exist at different other frequencies. Basing the frequency conversion on a sampling technique gives two advantages: the photonic mixer configuration is the same for up and down conversions, and the frequency of the local oscillator can be less than the addressed frequency range.The implementation of such a sampling technique needs an optically-controlled high-frequency optical switch. As shown in this work, a SOA-MZI can play this role. Depending on the relative phase between its arms, an interferometric structure (MZI) can transmit or cancel an optical input signal. By locating one SOA in each arm of the MZI structure, the cross-phase modulation that exists inside an SOA is exploited to optically control the optical switch state of the MZI.Controlled by an optical pulse source, this optical switch is able to sample an optical input signal carrying complexmodulated data. Frequency conversions of mono and multi-carrier signals in the range 0.5-39.5 GHz have been successfully achieved. By using a differential configuration of the SOA-MZI, both up and down conversions at bitrates up to 1 Gb/s are reached.
29

Amplificador óptico híbrido Raman/EDFA com controle automático de ganho para redes DWDM reconfiguráveis / Raman/EDFA hybrid optical amplifier with automatic gain control for reconfigurable DWDM networks

Oliveira, Juliano Rodrigues Fernandes de 27 May 2014 (has links)
Visando atender a massificação das tecnologias da informação e comunicação (TIC) por meio de um aproveitamento mais eficiente da infra-estrutura de fibras ópticas, as redes ópticas DWDM vem passando por significativa evolução de capacidade, com base no uso de formatos de modulação avançados, para canais operando em taxas de 100 Gb/s e superiores, bem como no emprego de topologias dinâmicas e reconfiguráveis. Estas redes ópticas de nova geração impõe novos requisitos de desempenho aos amplificadores ópticos. Especificamente, as características dinâmicas da rede tornam obrigatório o uso de esquemas de controle que assegurem estrita planicidade espectral de ganho enquanto o emprego de formatos de modulação avançados e de alta ordem requer margens mais estreitas em termos da relação sinal-ruído aceitável para detecção dos sinais recebidos. Neste contexto, esta tese propõe e avalia experimentalmente uma topologia de amplificação óptica híbrida Raman/EDFA, introduzindo um novo esquema de controle automático de ganho e apresentando desempenho superior aos amplificadores atualmente usados em redes DWDM reconfiguráveis. O amplificador óptico híbrido desenvolvido baseia-se em um estágio Raman distribuído contra-propagante, com excelente desempenho de figura de ruído (porém com baixa eficiência de conversão de bombeio em amplificação - PCE) seguido de um estágio EDFA, que assegura alta potência de saída, devido a sua elevada PCE. Ganho espectral plano foi obtido por meio de uma técnica de controle automático de ganho inovadora, baseada na atuação paralela e independente de duas malhas de controle automático de ganho, uma primeira aplicada ao estágio de amplificação Raman visando ganho-alvo variável com baixa variação espectral, enquanto outra malha de controle de ganho visa fornecer ganho alvo fixo ao estágio EDFA, com alta potência de saída. / Seeking to support the massive deployment of information and communication technologies (ICTs) by means of a more efficient usage of the optical fiber infrastructure, DWDM optical networks have been undergoing a significant capacity evolution, by using advanced modulation formats for optical channels operating at data rates of 100 Gb/s and beyond, as well as by employing dynamic and reconfigurable network topologies. These new generation optical networks impose new performance benchmarks on the optical amplifiers. Specifically, the dynamic characteristics of the network make mandatory the deployment of control schemes which assure stringent optical gain spectral flatness while the usage of high-order advanced modulation formats translate into more strict margins of signal-to-noise ratios for the detected signals. In this context, this thesis proposes and experimentally evaluates an hybrid Raman/ EDFA optical amplifier topology, introducing a novel automatic gain control scheme and demonstrating improved performance over the optical amplifiers already in use in DWDM reconfigurable networks. The developed hybrid optical amplifier is based on a distributed counter-propagating Raman stage, displaying excellent noise figure performance (albeit presenting low conversion efficiency - PCE) followed by an EDFA stage, which assures high output power, due to its high PCE. Flat spectral gain was achieved by means of a novel gain control technique, based on the parallel and independently acting of two control schemes, the first applied over the Raman amplifying stage, aiming at a variable target gain and low spectral gain ripple, while the other seeks to attain a fixed target gain at the EDFA, assuring a high output power.
30

Pulse-quality Analysis of Rational Harmonic Mode-locking Semiconductor Optical Amplifier Fiber Laser via Optical Pulse Injection

Kang, Jung-Jui 26 July 2011 (has links)
Rational harmonic mode-locking (RHML) fiber lasers generating picoseconds pulsewidth at high-repetition-rate have emerged as a key component for the high-bit-rate optical time-division multiplexing (OTDM) communication system. In this research, we have discovered higher order RHML semiconductor optical amplifier fiber laser (SOAFL) has the degradation on mode-locking capacity, and an output pulse-train with un-equalized peak amplitudes. Therefore, the main focus of the dissertation is focused on the pulse quality analysis and improvement of RHML-SOAFL via optical pulse injection. First, we observed the degradation on mode-locked mechanism of the dark-optical-comb injection mode-locked semiconductor optical amplifier fiber laser (SOAFL) at RHML order increases to >8. Such a less pronounced RHML mechanism at higher orders is mainly attributed to the weak mode-locking strength at high RHML orders as compared to continuous-wave (CW) lasing mechanism, which has been quantified by reduction of spectral linewidth and pulse-shortening force, and the ratio of DC/pulse amplitude enhancement for discriminating 1st to 20th-order RHML capability. To overcome the un-equalized RHML peak intensity, optical injection induced gain modulation of a SOA are demonstrated to equalize the peak intensity of 5-GHz and 40-GHz RHML-SOAFL by using 1-GHz inverse-optical-pulse and a reshaped 10-GHz gain-switching FPLD pulse injection, respectively. The optical injection mode-locking models are constructed to simulate the compensation of uneven amplitudes between adjacent RHML pulse peaks before and after pulse-amplitude equalization. The optimized RHML pulse exhibits a signal-to-noise suppression ratio of 45-dB, and the clock amplitude jitter below the threshold limitation of 10%. On the other hand, to avoid the mode-locked degradation on RHML, a 2nd-order fractional Talbot effect induced frequency-doubling of 10-GHz optical pulse-train is demonstrated to backward inject a SOAFL for 40-GHz RHML. In comparison with the SOAFL pulse-train repeated at 40-GHz generated by the 4th-order purely RHML process, the optimized 2nd-order fractional Talbot effect in combination with the 2nd-order RHML mechanism significantly enhances the modulation-depth of RHML, thus improving the on/off extinction ratio of the 40-GHz SOAFL pulse-train. Such a new scheme also provides a more stable 40-GHz RHML pulse-train from the SOAFL with its timing jitter reduce. Finally, we established a SHG-FROG to distinguish linear and nonlinear chirp of 10-GHz soliton HML-SOAFL, and further extracted intra-cavity linear dispersion via simulation of Schrodinger equation. After the procedure, the linear chirp almost dominates chirp characteristics for optical pulse injection HML-SOAFL system.

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