Le développement des transistors organiques, ces dernières années, a permis une nette amélioration de leurs performances et de leur stabilité. Ceci a été possible, notamment, grâce à une meilleure compréhension des mécanismes régissant le transport de charges dans ces dispositifs. Cependant, certains phénomènes restent encore à éclaircir, en particulier au niveau de l’interface entre le semi-conducteur et le diélectrique. Le piégeage des porteurs de charges qui est une des principales causes de perturbations du transport de charges dans les transistors organiques, en est un. Cette thèse se propose donc, d’étudier ce phénomène dans des transistors à base de pentacène.Les groupements polaires, et plus particulièrement les groupements hydroxyles, présents à l’interface entre l’isolant et le semi-conducteur, sont les principaux responsables du piégeage des porteurs de charges dans les transistors organiques. Afin de limiter leur présence, une technologie basée sur l’emploi d’une couche interfaciale diélectrique passivante, pauvre en groupements hydroxyles, à base de fluorure de calcium, a été mise en place. L’influence de cette couche sur le comportement de transistors à base de pentacène a été étudiée, de même que le vieillissement de ces dispositifs sous différentes conditions de stockage (sous vide et à l’air) et sous contrainte électrique.Ainsi, il a été mis en évidence qu’une couche de fluorure de calcium d’une épaisseur trop importante (de l’ordre de 5 nm) modifie la morphologie de la couche de pentacène, ce qui se traduit par une quasi-disparition du transport de charges dans le pentacène en configuration de transistor à effet de champ. Les études de vieillissement ont montré que sous l’effet de la couche interfaciale de CaF2, même d’une très fine épaisseur (de quelques nanomètres), une quantité plus importante d’humidité est présente dans la couche de pentacène, probablement à cause de la nature hygroscopique du fluorure de calcium. / These recent years, Organic Field-Effect Transistor (OFET) development has significantly improved it performances and it stability. This was made possible, through a better understanding of the mechanisms governing charge transport in these devices. However, some phenomena remain unclear, in particular, at the interface between the semiconductor and the dielectric. Charge carrier trapping which is one of the main causes of charge transport disturbance in organic transistors, is one of them. So, this work aims to investigate such phenomena in pentacene-based transistors.Polar groups and particularly, hydroxyl groups, located at the insulator-semiconductor interface, are the main sources of charge carriers trapping in OFET. To prevent their presence, an OFET fabrication technology based on a passivating dielectric, poor of hydroxyl groups, calcium fluoride-based interfacial layer has been developed. Effect of this layer on pentacene-based transistors operation has been studied, as well as these devices aging under different storage atmosphere (in vacuum and in air) and under electrical stress.Thus, it has been highlighted that an interfacial layer of calcium fluoride with a too high thickness (around 5 nm) changes pentacene layer morphology which results in a quasi-disappearance of charge transport in pentacene in OFET configuration. Aging studies showed that under the effect of CaF2 interfacial layer, even with a very thin thickness (a few nanometers), a greater quantity of moisture is induced in pentacene layer probably due to the hygroscopic nature of calcium fluoride.

Conjugated polymers and oligomers are great materials for use in the next generation devices namely organic field effect transistors, light emitting diodes and polymeric solar cells. Apart from having the potential for developing power-efficient, flexible, robust and inexpensive devices, conjugated polymers can also be tuned by molecular design to optimize device characteristics. One key problem for the full commercial exploitation of conjugated polymers is that the charge carrier mobility of the state-of-the-art polymer semiconductors is much lower than required for many applications. The performance of the devices is strongly dependent on the molecular structure and supermolecular assembly of the conjugated polymer chains. This thesis covers our attempts to design molecular structure to control and improve the solid state properties of conjugated polymers. The relative placement of side chains along the backbone has a great influence on the solid state ordering of conjugated polymers. Poly(2,5-disubstituted-1,4-phenylene ethynylene)s (PPE)s, an important class of conjugated polymers, are generally synthesized by Pd-catalyzed coupling polymerizations of appropriately substituted diiodo and diethynyl benzenes (i.e., A-A and B-B type monomers). In asymmetrically substituted PPEs, this results in an irregular substitution pattern of the side chains along the polymer backbone. We report a new synthetic approach to prepare regioregular unsymmetrically substituted PPEs by polymerization of 4-iodophenylacetylenes (i.e., A-B type monomer). We provide a detailed discussion of various approaches to the synthesis of PPEs with different regioregularities and provide a description of the differences between regioregular and regiorandom analogs. The effect of regioregularity becomes even more important when the two side chains are very dissimilar or amphiphilic. We explore the effect of relative placement hydrophobic (dodecyloxy) / hydrophilic (tri(ethylene glycol) and hydrophobic (dodecyloxy)/fluorophilic (fluoroalkyl) side chains along the poly(1,4-phenylene ethynylene) backbone. We found that the regioregular substitution of the polymer backbone provides a structure in which the side chains segregate to afford a Janus-type structure. The regioregular polymer chains pack more densely in a monolayer at the air-water interface, and pack into a bilayer in the solid state to form a highly crystalline material. Pentacenes are very important organic molecules for use as semiconductor in oFETs due to their low band gap and high field effect mobility. One approach to reduce the bandgap of a polymeric system and improve performance is to include low bandgap small molecules into the conjugated backbone. A new copolymer system consisting of pentacene and terthiophene was developed and its optical and electronic properties along with its stability were evaluated. We report the use of ultrasonication of P3HT as a novel operationally-simple process to significantly improve the field effect mobility of P3HT-based FETs, thereby potentially eliminating the need for dielectric surface modifications or further processing of the device. Investigation of the sonicated polymer samples by number of characterization techniques indicates that ultrasonication leads to aggregation and ordering of the P3HT chains resulting in increase in the mobility.

Organic field-effect transistors (OFETs) have attracted tremendous attention due to their flexibility, transparency, easy processiblity and low cost of fabrication. High-performance OFETs are required for their potential applications in the organic electronic devices such as flexible display, integrated circuit, and radiofrequency identification tags. One of the major limiting factors in fabricating high-performance OFET is the large interfacial barrier between metal electrodes and OSC which results in low charge injection from the metal electrodes to OSC. In order to overcome the challenge of low charge injection, carbon nanotubes (CNTs) have been suggested as a promising electrode material for organic electronic devices. In this dissertation, we study the effect of carbon nanotube (CNT) density in CNT electrodes on the performance of organic field effect transistor (OFETs). The devices were fabricated by thermal evaporation of pentacene on the Pd/single walled CNT (SWCNT) electrodes where SWCNTs of different density (0-30/um) were aligned on Pd using dielectrophoresis (DEP) and cut via oxygen plasma etching to keep the length of nanotube short compared to the channel length. From the electronic transport measurements of 40 devices, we show that the average saturation mobility of the devices increased from 0.02 for zero SWCNT to 0.06, 0.13 and 0.19 cm2/Vs for low (1-5 /µm), medium (10-15 /µm) and high (25-30 /µm) SWCNT density in the electrodes, respectively. The increase is three, six and nine times for low, medium and high density SWCNTs in the electrode compared to the devices that did not contain any SWCNT. In addition, the current on-off ratio and on-current of the devices are increased up v to 40 times and 20 times with increasing SWCNT density in the electrodes. Our study shows that although a few nanotubes in the electrode can improve the OFET device performance, significant improvement can be achieved by maximizing SWCNT/OSC interfacial area. The improved OFET performance can be explained due to a reduced barrier height of SWCNT/pentacene interface compared to metal/pentacene interface which provides more efficient charge injection pathways with increased SWCNT/pentacene interfacial area.

A eletrônica digital desempenha papel essencial no desenvolvimento e manutenção dos padrões de vida em prática hoje no mundo. A peça fundamental para a criação desta era tecnológica é sem dúvidas o transistor. Com o advento de novos materiais, a busca por transistores que oferecem novas oportunidades de processamento e aplicação permitiu que uma nova área fosse criada: a eletrônica orgânica. Transistores de efeito de campo baseados em filmes finos de materiais orgânicos têm recebido grande atenção nas últimas décadas. Apresentamos um estudo experimental e teórico de transistores de efeito de campo a base de filmes finos orgânicos. Foram caracterizados transistores usando um derivado do pentaceno (TMTES-pentaceno) como camada ativa em um dispositivo feito sobre Si/SiO2. Mostramos que a inclusão do semicondutor orgânico em uma matriz polimérica isolante ajuda a manter a estabilidade termo mecânica do dispositivo. Foi desenvolvido um modelo que levasse em conta as resistências parasíticas para explicar o comportamento do transistor em função da temperatura. Também foram construídos e caracterizados transistores usando rr-P3HT como semicondutor e PMMA como isolantes. Apresentamos transistores do tipo Top-Gate e Bottom-Gate com mobilidade máxima de 7 x 10-3 cm2/V.s. Valores de razão ON/OFF de ~ 900 foram encontrados nos transistores otimizados. O comportamento dos transistores é analisado em função da temperatura e os modelos de aproximação de canal gradual e de Vissenberg-Matters foram aplicados para extração dos parâmetros de interesse. Por fim, apresentamos um modelo de corrente de canal baseado na resolução 2D numérica da equação de Poisson usando as idéias de Vissenberg-Matters para a concentração de cargas em função do potencial local. O modelo, embora ainda nos primeiros estágios de desenvolvimento, prevê a saturação da corrente nas curvas de saída simuladas sem limitações de regime de validade. / Digital electronics plays an essential role in the development and maintenance of living standards into practice in the world today. The cornerstone for the creation of this technological age is undoubtedly the transistor. With the advent of new materials, the search for transistors that offer new opportunities in processing and application allowed a new area to be created: the organic electronics. Field effect transistors based on organic thin films have received great attention in recent decades. We report an experimental and theoretical study of field effect transistors based on organic thin films. We characterized transistors manufactured using a derivative of pentacene (TMTES-pentacene) as the active layer in a device and using Si/SiO2 as gate and insulator. We show that the inclusion of the organic semiconductor in an insulating polymeric matrix helps to maintain the termo-mechanical stability of the device. A model was developed that take into account the parasitic resistances and to explain the behavior of the transistor as a function of temperature. We also present the manufacturing and characterization process of transistors using rr-P3HT as semiconductor and PMMA as insulator. We report Top-Gate and Bottom-Gate transistors with maximum mobility of 7 x 10-3 cm2/V.s. The maximun ON/OFF ratio of ~ 900 was found for the optimized transistors. The behavior of the transistors was analyzed as a function of temperature and both gradual channel approximation and Vissenberg-Matters models were applied for extracting the parameters. Finally, we present a channel current model based on the resolution of 2D numerical Poisson equation using the ideas of Vissenberg-Matters to the calculate the concentration of charges due to the local potential. The model, although still in the early stages of development, predicts the saturation current at output simulated curves with no limitation of regime validity.

In this dissertation, we investigate two emerging strategies for enhancing the performance of organic photovoltaics. The first takes advantage of a process called singlet exciton fission, and the second embodies an exodus from the fullerene electron acceptors prominent in organic solar cells. Indeed, this versatile class of tunable small molecules are aptly termed nonfullerene acceptors. However, both strategies would benefit from a greater understanding of underlying principles. Singlet exciton fission is a photon-multiplying process in which a singlet exciton from a high-energy absorbed photon splits into two triplet excitons. The process could significantly reduce energy lost to heat in photovoltaic devices, but its mechanisms are still misunderstood. One model involves direct coupling between the singlet and triplet states, and another model involves an intermediate charge transfer state. Transient absorption spectroscopy allowed us to examine singlet fission in films of pentacene, fluorinated pentacene, and coevaporated blends of various mixing ratios. We directly observe an intermolecular charge transfer state during singlet fission in solid films of coevaporated pentacene and peruoropentacene, which supports the model of charge transfer state-mediated singlet fission. Furthermore, we successfully induced singlet fission in one blend by directly exciting the charge transfer state below the bandgap. We use various types of steady state and time-resolved spectroscopy to characterize two types of nonfullerene electron acceptors. The first type is a group of tetraazabenzodiuoranthene diimide (BFI) dimers and a BFI monomer. The BFI dimers were designed to have twisted, nonplanar 3-dimensional structures and have helped achieve power conversion efficiencies of over 8% in organic solar cells. The other type of nonfullerene acceptor is a calamitic small molecule, and we consider the BAF-4CN electron acceptor, which has also been used in a solar cell whose efficiency exceeded 8%. Spectroscopic studies give insight into the performances of these nonfullerene devices in relation to fullerene-derivative counterparts. We find that the nonfullerene blends suffer from more geminate charge recombination. However, despite this drawback, in some cases, slower rates of nongeminate recombination may lead to successful power conversion efficiencies in nonfullerene solar cells.

Nanotubos de carbono e polímeros condutores são fortes candidatos à miniaturização dos componentes eletrônicos disponíveis atualmente. Estudos teóricos afirmaram que 1/3 dos nanotubos seriam metálicos, enquanto que os outros seriam semicondutores, mas alguns grupos reportaram medidas experimentais evidenciando um pequeno gap eletrônico em tubos considerados metálicos. Protótipos de transístores compostos de nanotubos e moléculas orgânicas conjugadas foram propostos e foi observado que o recobrimento dos tubos por moléculas de pentaceno tornava os dispositivos menos suscetíveis à deposição de impurezas, o que diminuía a histerese na curva característica i x V, ao mesmo tempo que a formação de cristais de pentaceno era favorecida. Neste trabalho estudamos a estrutura eletrônica dos nanotubos (5,5) e (9,0) través de DFT e observamos presença de um gap nesses sistemas, assim como uma deformação de suas estruturas de ligações químicas, evidenciando a distorção de Peierls. O efeito do termo de troca de Hartree-Fock introduzido no funcional B3LYP foi avaliado variando-se seu peso e observando as propriedades destes sistemas. Em uma segunda etapa, utilizamos mecânica molecular e dinâmica molecular clássica com o campo de forças CVFF 950 e observamos a formação de estruturas de pentaceno em volta dos tubos, evidenciando o favorecimento da formação de cristais do mesmo quando depositado sobre os nanotubos. / Carbon Nanotubes and conducting polymers are strong candidates for use in nanoscale electronic devices. Theoretical studies claimed that 1/3 of the nanotubes are metallic, while the others are semiconductors, but some groups have reported experimental measurements of a small electronic gap in tubes considered metallic. Prototype transistors made of nanotubes and organic conjugated molecules were proposed and it has been noticed that the coverage of the tubes by pentacene molecules made those trasistors less susceptible to impurity deposition, reducing the hysteresis in the characteristic I x V curve, while the formation of pentacene cristals was favored. In this work, we studied the electronic structure of the nanotubes (5,5) and (9,0) using DFT and noticed an electronic gap in those systems, as well as a deformation of their structures, similar to a Peierls distortion. The effect of the Hartree-Fock exchange included in the B3LYP functional was studied, as we varied its weight to obtain some properties of those systems. Later, we used molecular mechanics and classical molecular dynamics with the CVFF 950 force field and obtained structures compatible with pentacene crystals around the tubes, showing that the tubes in fact favor the formation of of these structures around them.

A eletrônica digital desempenha papel essencial no desenvolvimento e manutenção dos padrões de vida em prática hoje no mundo. A peça fundamental para a criação desta era tecnológica é sem dúvidas o transistor. Com o advento de novos materiais, a busca por transistores que oferecem novas oportunidades de processamento e aplicação permitiu que uma nova área fosse criada: a eletrônica orgânica. Transistores de efeito de campo baseados em filmes finos de materiais orgânicos têm recebido grande atenção nas últimas décadas. Apresentamos um estudo experimental e teórico de transistores de efeito de campo a base de filmes finos orgânicos. Foram caracterizados transistores usando um derivado do pentaceno (TMTES-pentaceno) como camada ativa em um dispositivo feito sobre Si/SiO2. Mostramos que a inclusão do semicondutor orgânico em uma matriz polimérica isolante ajuda a manter a estabilidade termo mecânica do dispositivo. Foi desenvolvido um modelo que levasse em conta as resistências parasíticas para explicar o comportamento do transistor em função da temperatura. Também foram construídos e caracterizados transistores usando rr-P3HT como semicondutor e PMMA como isolantes. Apresentamos transistores do tipo Top-Gate e Bottom-Gate com mobilidade máxima de 7 x 10-3 cm2/V.s. Valores de razão ON/OFF de ~ 900 foram encontrados nos transistores otimizados. O comportamento dos transistores é analisado em função da temperatura e os modelos de aproximação de canal gradual e de Vissenberg-Matters foram aplicados para extração dos parâmetros de interesse. Por fim, apresentamos um modelo de corrente de canal baseado na resolução 2D numérica da equação de Poisson usando as idéias de Vissenberg-Matters para a concentração de cargas em função do potencial local. O modelo, embora ainda nos primeiros estágios de desenvolvimento, prevê a saturação da corrente nas curvas de saída simuladas sem limitações de regime de validade. / Digital electronics plays an essential role in the development and maintenance of living standards into practice in the world today. The cornerstone for the creation of this technological age is undoubtedly the transistor. With the advent of new materials, the search for transistors that offer new opportunities in processing and application allowed a new area to be created: the organic electronics. Field effect transistors based on organic thin films have received great attention in recent decades. We report an experimental and theoretical study of field effect transistors based on organic thin films. We characterized transistors manufactured using a derivative of pentacene (TMTES-pentacene) as the active layer in a device and using Si/SiO2 as gate and insulator. We show that the inclusion of the organic semiconductor in an insulating polymeric matrix helps to maintain the termo-mechanical stability of the device. A model was developed that take into account the parasitic resistances and to explain the behavior of the transistor as a function of temperature. We also present the manufacturing and characterization process of transistors using rr-P3HT as semiconductor and PMMA as insulator. We report Top-Gate and Bottom-Gate transistors with maximum mobility of 7 x 10-3 cm2/V.s. The maximun ON/OFF ratio of ~ 900 was found for the optimized transistors. The behavior of the transistors was analyzed as a function of temperature and both gradual channel approximation and Vissenberg-Matters models were applied for extracting the parameters. Finally, we present a channel current model based on the resolution of 2D numerical Poisson equation using the ideas of Vissenberg-Matters to the calculate the concentration of charges due to the local potential. The model, although still in the early stages of development, predicts the saturation current at output simulated curves with no limitation of regime validity.

Nanotubos de carbono e polímeros condutores são fortes candidatos à miniaturização dos componentes eletrônicos disponíveis atualmente. Estudos teóricos afirmaram que 1/3 dos nanotubos seriam metálicos, enquanto que os outros seriam semicondutores, mas alguns grupos reportaram medidas experimentais evidenciando um pequeno gap eletrônico em tubos considerados metálicos. Protótipos de transístores compostos de nanotubos e moléculas orgânicas conjugadas foram propostos e foi observado que o recobrimento dos tubos por moléculas de pentaceno tornava os dispositivos menos suscetíveis à deposição de impurezas, o que diminuía a histerese na curva característica i x V, ao mesmo tempo que a formação de cristais de pentaceno era favorecida. Neste trabalho estudamos a estrutura eletrônica dos nanotubos (5,5) e (9,0) través de DFT e observamos presença de um gap nesses sistemas, assim como uma deformação de suas estruturas de ligações químicas, evidenciando a distorção de Peierls. O efeito do termo de troca de Hartree-Fock introduzido no funcional B3LYP foi avaliado variando-se seu peso e observando as propriedades destes sistemas. Em uma segunda etapa, utilizamos mecânica molecular e dinâmica molecular clássica com o campo de forças CVFF 950 e observamos a formação de estruturas de pentaceno em volta dos tubos, evidenciando o favorecimento da formação de cristais do mesmo quando depositado sobre os nanotubos. / Carbon Nanotubes and conducting polymers are strong candidates for use in nanoscale electronic devices. Theoretical studies claimed that 1/3 of the nanotubes are metallic, while the others are semiconductors, but some groups have reported experimental measurements of a small electronic gap in tubes considered metallic. Prototype transistors made of nanotubes and organic conjugated molecules were proposed and it has been noticed that the coverage of the tubes by pentacene molecules made those trasistors less susceptible to impurity deposition, reducing the hysteresis in the characteristic I x V curve, while the formation of pentacene cristals was favored. In this work, we studied the electronic structure of the nanotubes (5,5) and (9,0) using DFT and noticed an electronic gap in those systems, as well as a deformation of their structures, similar to a Peierls distortion. The effect of the Hartree-Fock exchange included in the B3LYP functional was studied, as we varied its weight to obtain some properties of those systems. Later, we used molecular mechanics and classical molecular dynamics with the CVFF 950 force field and obtained structures compatible with pentacene crystals around the tubes, showing that the tubes in fact favor the formation of of these structures around them.

In dieser Arbeit wurden unterschiedliche Moleküle aus der Klasse der Phthalocyanine (Pc) und Pentacen-Materialien als aktive Schichten in organischen Feldeffekttransistoren (OFETs) mittels organischer Molekularstrahldeposition (OMBD) unter Hochvakuumbedingungen aufgedampft. Die elektrische Charakterisierung von Top-Kontakt (TC) und Bottom-Kontakt (BC) OFET-Konfigurationen, die Auskunft über die Ladungsträgermobilität, die Schwellspannung und das Ein/Aus-Verhältnis gibt, wurde sowohl unter Hochvakuum- als auch unter Umgebungsbedingungen an Luft durchgeführt. Für beide OFET-Konfigurationen wurde Gold für die Source- und Drain-Elektroden genutzt. Aussagen über die Morphologie der untersuchten organischen Schichten, die auf Siliziumsubstraten mit einem 100 nm dicken Siliziumdioxyd (SiO2) Gate-Dielektrikum abgeschieden wurden, wurden mittels Rasterelektronenmikroskopie (SEM) und Rasterkraftmikroskopie (AFM) erhalten. Im Vergleich mit den TC OFETs wurde im Bereich des aktiven Kanals in den BC OFETs die Bildung einer höheren Anzahl von Körnern und Korngrenzen gefunden, welche zur Degradation dieser Bauelemente speziell bei Atmosphärenexposition beiträgt. Es wurden die nachfolgenden fünf Moleküle aus der Klasse der Pc untersucht: Kupferphthalocyanin (CuPc), Fluoriertes Kupferphthalocyanin (F16CuPc), Kobaltphthalocyanin (CoPc), Titanylphthalocyanin (TiOPc), und Lutetium-bis-Phthalocyanin (LuPc2). Diese Moleküle wurden mit dem Ziel ausgewählt, die Performance der OFETs unter vergleichbaren Präparationsbedingungen zu testen, wenn das zentrale Metallatom, die Halbleitereigenschaften oder die molekulare Geometrie geändert werden. Durch die Fluorierung (F16CuPc) wurde eine Änderung im Leitungsverhalten von CuPc von p-Typ zum n-Typ erreicht und in der elektrischen Charakteristik der OFETs nachgewiesen. Diese Resultate wurden ebenfalls mittels Kelvin-Sonden-Kraftmikroskopie (KPFM) erhalten. Der Einfluss der Molekülgeometrie auf die Performance der Bauelemente wurde durch die Änderung der Gestalt der Moleküle von planar (CuPc, F16CuPc, CoPc) zu nicht planaren Einfach- (TiOPc) und nicht planaren Doppeldeckermolekülen (LuPc2) untersucht. Eine höhere OFET-Performance wurde erreicht, wenn planare Pc-Materialien für die Bildung der aktiven Schicht verwendet wurden. Das kann teilweise auf die Morphologie der Pc-Schichten zurückgeführt werden. AFM-Aufnahmen zeigen, dass im Vergleich mit nicht planaren Molekülen größere Körner und deshalb eine geringere Anzahl von Korngrenzen gebildet werden, wenn planare Pc-Moleküle verwendet werden. Für den Fall von TC CuPc OFETs wurde gezeigt, dass die Performance der Bauelemente verbessert werden kann, wenn das Gate-Dielektrikum mit einer selbstorganisierten Monoschicht von n-Octadecyltrichlorosilan modifiziert wird oder wenn das Substrat während der Aufdampfung der CuPc-Schicht auf einer höheren Temperatur gehalten wird. Für die Klasse der Pentacen-Materialien wurde ein Vergleich zwischen der Performance von BC OFETs, die die kürzlich synthetisierten fluorierten n-Typ Pentacenquinon-Moleküle nutzen, und denen, die die p-Typ Pentacen-Moleküle nutzen, präsentiert. Das große Erfordernis hochreine Materialien zu verwenden, um eine Degradation der OFETs zu vermeiden, wurde durch Durchführung von Mehrfachmessungen an den OFET-Bauelementen bestätigt. Aus diesen Experimenten lassen sich Informationen bzgl. der Störstellen an der Grenzfläche organische Schicht/SiO2 ableiten. Weiterhin wurde für einige der untersuchten Moleküle die Performance von BC OFETs unter dem Einfluss von unterschiedlichen Gasen gezeigt.

In dieser Arbeit wurden unterschiedliche Moleküle aus der Klasse der Phthalocyanine (Pc) und Pentacen-Materialien als aktive Schichten in organischen Feldeffekttransistoren (OFETs) mittels organischer Molekularstrahldeposition (OMBD) unter Hochvakuumbedingungen aufgedampft. Die elektrische Charakterisierung von Top-Kontakt (TC) und Bottom-Kontakt (BC) OFET-Konfigurationen, die Auskunft über die Ladungsträgermobilität, die Schwellspannung und das Ein/Aus-Verhältnis gibt, wurde sowohl unter Hochvakuum- als auch unter Umgebungsbedingungen an Luft durchgeführt. Für beide OFET-Konfigurationen wurde Gold für die Source- und Drain-Elektroden genutzt. Aussagen über die Morphologie der untersuchten organischen Schichten, die auf Siliziumsubstraten mit einem 100 nm dicken Siliziumdioxyd (SiO2) Gate-Dielektrikum abgeschieden wurden, wurden mittels Rasterelektronenmikroskopie (SEM) und Rasterkraftmikroskopie (AFM) erhalten. Im Vergleich mit den TC OFETs wurde im Bereich des aktiven Kanals in den BC OFETs die Bildung einer höheren Anzahl von Körnern und Korngrenzen gefunden, welche zur Degradation dieser Bauelemente speziell bei Atmosphärenexposition beiträgt. Es wurden die nachfolgenden fünf Moleküle aus der Klasse der Pc untersucht: Kupferphthalocyanin (CuPc), Fluoriertes Kupferphthalocyanin (F16CuPc), Kobaltphthalocyanin (CoPc), Titanylphthalocyanin (TiOPc), und Lutetium-bis-Phthalocyanin (LuPc2). Diese Moleküle wurden mit dem Ziel ausgewählt, die Performance der OFETs unter vergleichbaren Präparationsbedingungen zu testen, wenn das zentrale Metallatom, die Halbleitereigenschaften oder die molekulare Geometrie geändert werden. Durch die Fluorierung (F16CuPc) wurde eine Änderung im Leitungsverhalten von CuPc von p-Typ zum n-Typ erreicht und in der elektrischen Charakteristik der OFETs nachgewiesen. Diese Resultate wurden ebenfalls mittels Kelvin-Sonden-Kraftmikroskopie (KPFM) erhalten. Der Einfluss der Molekülgeometrie auf die Performance der Bauelemente wurde durch die Änderung der Gestalt der Moleküle von planar (CuPc, F16CuPc, CoPc) zu nicht planaren Einfach- (TiOPc) und nicht planaren Doppeldeckermolekülen (LuPc2) untersucht. Eine höhere OFET-Performance wurde erreicht, wenn planare Pc-Materialien für die Bildung der aktiven Schicht verwendet wurden. Das kann teilweise auf die Morphologie der Pc-Schichten zurückgeführt werden. AFM-Aufnahmen zeigen, dass im Vergleich mit nicht planaren Molekülen größere Körner und deshalb eine geringere Anzahl von Korngrenzen gebildet werden, wenn planare Pc-Moleküle verwendet werden. Für den Fall von TC CuPc OFETs wurde gezeigt, dass die Performance der Bauelemente verbessert werden kann, wenn das Gate-Dielektrikum mit einer selbstorganisierten Monoschicht von n-Octadecyltrichlorosilan modifiziert wird oder wenn das Substrat während der Aufdampfung der CuPc-Schicht auf einer höheren Temperatur gehalten wird. Für die Klasse der Pentacen-Materialien wurde ein Vergleich zwischen der Performance von BC OFETs, die die kürzlich synthetisierten fluorierten n-Typ Pentacenquinon-Moleküle nutzen, und denen, die die p-Typ Pentacen-Moleküle nutzen, präsentiert. Das große Erfordernis hochreine Materialien zu verwenden, um eine Degradation der OFETs zu vermeiden, wurde durch Durchführung von Mehrfachmessungen an den OFET-Bauelementen bestätigt. Aus diesen Experimenten lassen sich Informationen bzgl. der Störstellen an der Grenzfläche organische Schicht/SiO2 ableiten. Weiterhin wurde für einige der untersuchten Moleküle die Performance von BC OFETs unter dem Einfluss von unterschiedlichen Gasen gezeigt.