The temperature and thermal stress distributions and variations of the high power LED module were studied in this work. The thermal-elastic-plastic 3D finite element models of MSC.marc software package are employed to simulate these performances for the high power LED module. Two high power white light LED module designs are investigated¡G one is the traditional phosphorescent silicone with blue LED module and the other is a phosphor glass lens with blue LED module. The distributions of temperature and thermal stress of in these two operating LED modules are compared and discussed. The effects of different packaging parameters¡Ge.g. bonding materials, substrate materials, lens materials on the temperature and thermal stress have also been studied in this work. The simulated results reveal that the serious thermal crack may occur for these two designs if the power of single die is over 10 watt. The simulated results also indicate that an attached fin cooler may improve these thermal crack disadvantaged significantly. The effect of fin design parameters on the peak temperature reduction has studied. A feasible fin design for the high power LED module has also been proposed.

Organic semiconductors are very attractive for thin film Organic Photodetectors (OPDs) since they possess a number of desirable attributes for optical sensing including high absorption coefficients over visible and ultraviolet wavelengths and compatibility with large-area deposition processes such as ink-jet, screen printing, and solution processing. OPDs, in general, utilize a vertical device architecture where the photoactive organic semiconductor layers are sandwiched between top and bottom electrodes that provide electrical contact. More recently, an interest in utilizing a lateral device architecture instead of the vertical one, has emerged. In this architecture, the two contacts are positioned on the two sides of the photoactive material with respect to the direction of the incoming signal, separated by a small gap. However, the factors governing lateral OPDs’ photo-response are still not well understood. In this thesis, we fabricate top-contact lateral OPDs using a thermal evaporation only fabrication process. We study the factors governing both the dark and photo currents of lateral OPDs. The effect of the wide gap between the two electrodes on the current-voltage characteristics is discussed and the role of space charge limited conduction is investigated. The contributions in the photoresponse of light scattering through the active layers as well as the back reflection of light at the metallic contacts are emphasized. The reproducibility over repeated operation cycles of both dark and photo currents values is explored. Exposure to light of the lateral OPD is found to lead to a significant increase in the dark current. The role of the conductivity enhancement in the channel due to light-induced trap filling is investigated. External quantum efficiency and detectivity estimates are given for deep ultraviolet lateral (DUV) OPDs. A comparison with vertical DUV OPDs performances is provided. Finally, the use of a phosphorescent sensitizer doped in the absorbing bottom layer to improve top-contact lateral OPDs efficiency is discussed.

The objective of this thesis is to examine the photophysical and structural properties of Cu(I) complexes of 2-(2’-pyridyl)benzimidazolyl based ligands and Cu(I), Pd(II) and Pt(II) complexes of 2-(2’-pyridyl)indolyl based ligands, for possible use as phosphorescent emitters in OLEDs. The discovery of the atropisomeric 3,3’-bis(2-(2’-pyridyl)indolyl based ligands led to the examination of C-C coupling reactions and the investigation of the new chiral ligands with transition metal ions. Cu(I) complexes of 2-(2’pyridyl)benzimidazolyl-benzene with varying phosphine ligands were prepared. The structures were studied with X-ray crystallography and NMR. Experimental and computational results established that steric and electronic properties of the phosphine ligands influence the photophysical properties of the Cu(I) complexes. Polynuclear Cu(I) complexes with 2-(2’-pyridyl)benzimidazolyl based ligands and two PPh3 ancillary ligands were synthesized, the photoluminescent and electroluminescent properties were examined. A series of 2-(2’-pyridyl)indolyl based ligands; 2-(2’-pyridyl)indolyl-benzene (pib), 1,4-bis[2-(2’-pyridyl)indolyl]benzene (bib) and 1,3,5-tris[2-(2’-pyridyl)indolyl]benzene) (tib) and the corresponding C-C coupled dimers bis[3,3’(2-(2’-pyridyl)indolyl-benzene)] (bpib), bis[3,3’(1,4-bis[2-(2’-pyridyl)indolyl]benzene (bbib) and bis[3,3’(1,3,5-tris[2-(2’-pyridyl)indolyl]benzene)] (btib) were synthesized in a one-pot reaction with the formation of both C-N and C-C bonds. The photophysical properties of these new molecules were investigated. The dimers display intramolecular exciplex formation. The rotation barrier around the C-C bond in the 3 position of the bis-indole was calculated using DFT which support that bpib is an atropisomeric ligand. Cu(I), Pd(II) and Pt(II) complexes were synthesized with pib and bpib. [Cu(pib)(PPh3)2]+ contains a three-coordinate Cu(I) ion and doesn’t display MLCT but rather 3π-1π phosphorescence. In Pd(pib)(acac) and Pt(pib)(DMSO)Cl the pib ligand forms C,N chelated neutral complexes that display red emission in frozen solution and in solid state. The X-ray crystal structure for [Cu(bpib)2]+ revealed a homo-chiral crystal and for Pd(bpib)Cl2 and Pt(bpib)Cl¬2 show a trans-chelating geometry around the metal centre. Frozen solutions of [Cu(bpib)2]+ and Pd(bpib)Cl2 display MCLT phosphorescence. Finally the atropisomeric ligands bpib and bbib were examined as sensors to determine the enantiomeric excess of Zn(2-bromo-3-methylbutyrate)2 by CD spectroscopy. CD and fluorescent titration experiments verified that these ligands have selective interactions with different Zn(II) carboxylates. DFT computations showed that diastereomeric excess caused by chiral discrimination leads to the CD spectral-response of the atropisomeric ligands toward chiral Zn(II) carboxylates. / Thesis (Ph.D, Chemistry) -- Queen's University, 2008-09-25 09:54:21.464

Organic Light-Emitting Devices (OLEDs) have reached industrial maturity in display technology, since OLEDs provide salient advantages such as high brightness, fast response, wide viewing angle, mechanical flexibility, and low cost manufacturing. Due to the ability of electroluminescence (EL) from triplet excited states as well as singlet excited states, phosphorescent OLEDs (PHOLEDs) have a potential to achieve 100% internal quantum efficiency. Therefore, PHOLEDs can offer a competitive external quantum efficiency. However, the operational stability of PHOLEDs is relatively poor. Several mechanisms have been proposed to address the chemical and physical phenomena associated with intrinsic degradation of PHOLEDs, nevertheless, the reasons behind voltage rise and luminance loss accompanying PHOLEDs long term operation are not yet well understood. The state of the art p-i-n PHOLEDs offer relatively high efficiency and low efficiency roll-off. However, this technology is characterized by structure complexity. Therefore, much of the current research on PHOLEDs focuses on the development of the simplest possible and most easily processed architecture that can deliver the optimal combination of device properties. Simplified PHOLEDs, utilizing one material for both hole transport and emitter host, can be a good candidate for replacement of p-i-n technology. Simplified PHOLEDs offer higher efficiency than the p-i-n PHOLEDs , yet, their EL stability is found to be poor. In this thesis, the role of the ITO/organic interface on simplified PHOLEDs efficiency will be investigated. Furthermore, possible degradation mechanisms at the ITO/organic interface will be explored. Moreover, we will correlate degradation at the ITO/organic interface to PHOLEDs operational stability. Eventually, organic layers modifications including but not limited to emissive layer (EML) will be examined. By studying the indium tin oxide (ITO)/organic interface in simplified PHOLEDs, it was found that this interface is critical to PHOLEDs performance. The study shows that, this interface is critical to the PHOLED overall stability and is considered as one of the limiting factors of the long term operational stability of simplified PHOLEDs. The effect of optical excitation on the ITO/organic interface stability in hole-only devices was investigated. It was found that the ITO/organic interface is susceptible to exciton-induced degradation. This degradation affects the device stability severely compared to current-induced degradation. The exciton-induced degradation can be prevented by doping the hole transport layer (HTL), at the interface with an exciton quencher layer or by blocking the electrons from leaking to the ITO/organic interface that may further recombine with holes to form excitons. Further studies showed that upon combining both electrical stress and optical excitation, the device degradation is even more pronounced which is most likely due to interactions between charges and excitons. By using exciton life-time measurements, a new role of molybdenum trioxide (MoO3) in the electrical stability of PHOLEDs, as an exciton quencher layer, is introduced. Delayed EL (DEL) measurements showed that the simplified PHOLEDs are susceptible to triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) which might affect the operational stability of simplified PHOLEDs. Finally, EML modifications showed that the recombination zone of simplified PHOLEDs is located near the HTL/EML interface.

abstract: Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red/green/blue structure to produce light with high color rendering index. Another part of this work describes the fabrication of a 14.7" diagonal full color active-matrix OLED display on plastic substrate. The backplanes were designed and fabricated in the ASU Flexible Display Center and required significant engineering to develop; a discussion of that process is also included. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2017

Density functional (ca, BLYP, BPW91, B3LYP and B3PW91), MP2 and CCSD(T) methods in combination with LANL2DZ or cc-pVxZ-PP (where x=D(double), T(triple) Q(quadruple), and 5(quintuple)) basis sets have been employed in computing electronic transition energies of zinc and cadmium monomers. CCSD(T)/aug-cc-pV5Z-PP combination finds values that are 150 cm-1 from the experimental value for the zinc monomer and 240 cm-1 remove from the cadmium monomer excitation experimental value. These method/basis set combinations are also used to find spectroscopic values (re, De, we, wexe, Be , and Te) that rival experimental values for dimers and excimers. Examples of this can be seen with the CCSD(T)/aug-cc-pV5Z-PP combination phosphorescent emission results. The values found are within 120 cm-1 of the zinc emission energy and 290 cm-1 of the cadmium emission energy. While this combination rigorously models spectroscopic constants for monomers, dimers, and excimers, it does not efficiently model these constants for larger clusters with available modern computational resources. It is important to show spectroscopic trends (bonding, phosphorescent excitation and emissions) as clusters increase as the monomer and dimer emission energies do not model solid state metallophilic interactions and phosphorescence. The MP2/LANL2DZ combinations show qualitative cooperative bonding trends in group oligomers and extended excimers as size increases and shape change. Changes in excitation and emission energies are also shown as a function of size and shape of the clusters.

No description available.

L'objectif de cette thèse était de démontrer les potentialités de l'impression à jet d'encre pour le pilotage d'une HLED contenant des clusters métalliques phosphorescents dans le rouges, par des transistors organiques à effet de champs. Pour atteindre ce but, le projet a été divisé en deux parties : I) La fabrication et l'optimisation de transistors organiques de type n par photolithographie puis le transfert technologique vers l'impression à jet d'encre. II) Parallèlement au développement des transistors, je me suis attaché à la conception de matériaux hybrides luminescents pour la réalisation d'HLED. Pour la partie transistor, nous avons obtenu une meilleure compréhension des facteurs influençant l'injection de charges mais aussi la stabilité électrique pour un transistor de géométrie grille basse/contacts bas avec le fullerène C60 évaporé. Nous avons démontré que la résistance de contact est d'une part gouvernée par la morphologie du SCO au niveau des électrodes et d'autre part indépendante du travail de sortie du métal. En outre, nous avons vu que la stabilité électrique des transistors est fortement impactée par la nature du contact source et drain. L'optimisation des transistors fabriqués par photolithographie, qui a essentiellement consisté à modifier les interfaces, nous a permis de développer des transistors de type n performants avec des mobilités à effet de champ saturées allant jusqu'à 1,5 cm2/V.s pour une température maximum de procédé de 115 °C. Le transfert vers un transistor fabriqué par impression à jet d'encre a ensuite été effectué. Nous avons ensuite démontré que les morphologies de l'électrode de grille et de l'isolant, fabriqués par impression à jet d'encre, ont un impact négligeable sur les performances des transistors. Pour notre structure imprimée, l'injection de charges aux électrodes S/D est en fait le facteur clé pour la réalisation de transistors performants. Finalement, des matériaux phosphorescents rouges à base de cluster métalliques octaédrique de molybdène ont été développés. Le copolymère hybride résultant présentait un rendement quantique de photoluminescence de 51 %. La réalisation de l'HLED a ensuite été effectuée par combinaison d'une LED bleue commercial et du copolymère dopé avec des clusters octaédriques de molybdène pour des applications possibles en biologie ou dans l'éclairage. / The objective of this thesis was to demonstrate the potentialities of inkjet printing for driving an HLED containing red phosphorescent metallic clusters, with organic field effect transistors. To achieve this goal, the project was divided into two parts: I) The fabrication and optimization of n-type organic transistors by photolithography and then transfer to inkjet printing. II) Parallel to the development of transistors, I focused on designing luminescent hybrid materials for HLED realization. Concerning transistors, we obtained a better understanding of the factors influencing the charge injection but also the electrical stability for bottom gate/ bottom contact geometry transistor with evaporated C60 semiconductor. We have demonstrated that the contact resistance is on the one hand governed by the morphology of the SCO at the electrodes and on the other hand independent of the metal work function. In addition, we have observed that transistors electrical stability of is strongly impacted by the source and drain contact nature. The optimization of photolithography transistors, which essentially consisted of modifying the interfaces, allowed us to develop efficient n-type transistors with saturated field effect mobilities of up to 1.5 cm2/V.s for a maximal process temperature of 115 °C. The technological transfer to inkjet printed transistors was then performed. We then demonstrated that gate electrode and insulator morphologies deposited by inkjet printing, have a negligible impact on transistors performances. For our printed structure, charges injection at the S/D electrodes is in fact the key factor for high performance transistors realization. Finally, red phosphorescent materials based on molybdenum octahedral metal cluster have been developed. The resulting hybrid copolymer showed photoluminescence quantum yield up to 51%. The realization of the HLED was then carried out by combining a commercial blue LED and the copolymer doped with octahedral molybdenum clusters for possible applications in biology or lighting.

Luminescent materials can be found in a broad range of everyday applications. While in the seventies and eighties, the field of luminescent materials seemed to be fairly well covered, research in nineties has been revitalized both in industry and academia. Improvements over the last three decades have led to phosphor materials that operate close to their physical limits. It cannot be expected that properties such as quantum yield and spectral energy distribution will be significantly improved or that distinctly better materials will be found in the near future. Recently, there is a considerable research activity in the field of luminescent materials for lighting and displays to improve the chemical stability and to adopt the materials to the production technology. Ongoing miniaturization, lifetime improvement and spectral stability of fluorescent lamps on the one hand and brightness and contrast improvement in imaging systems on the other hand demand luminescent materials with very high stability that is invariable to operating conditions. All of the today's efficient lighting sources are based on either direct or indirect light emission from plasma discharges. During the pioneering stage, fluorescent lamp industries predominantly used mixtures of two photo luminescent materials: (Zn,Be)2SiO4.'Mn2+ having two emission maxima at 520 and 600 nm and MgW04 with 480 nm emission. The emission from these two phosphors covers the major portion of the visible spectrum. However, the compound (Zn,Be)2Si04 is hazardous to health because of its beryllium content. In 1942, Jenkins showed that Ca5(PO4)3(F,Cl):Sb,Mn was a very efficient emitter. The halophosphates emit both in the blue (Sb3+) as well as in the orange (Mn2+) spectral region, thus in addition yield white light. By carefully adjusting the ratio of Sb3+ and Mn2+ ion concentrations, a white light emitting phosphor was obtained with color temperatures ranging between 6500 and 2700K. However, the drawback of the halophosphate lamps is that it is impossible to have simultaneously high brightness and high color rendering; if the brightness is high (efficacy -80 lm W"1), the color rendering index (CRI) is of the order of 60, the CRI value can be improved up to 90, but then brightness decreases (-50 lm W"1). In 1974, another important breakthrough came in the form of compact fluorescent lamp, based on the trichromatic phosphor blend which resulted color rending values of 80-85 (color 80 lamps) at high efficiencies of 100 lm W"1. The fluorescent lamps with very high color rendering and efficiency can be obtained if three narrow band emitters with emission maxima at 450, 540 and 610 nm are employed. A typical trichromatic lamp phosphor blend comprises of (i) Sr5(PO4)3Cl:Eu2\ BaMgAl1()O,7:Eu2' as blue component, (ii) Ce0.67Tbo.33MgAl,,0,9, LaPO4,Le3\Tb3+ as green component and (iii)Y2C>3:Eiru as the red component. The color 80 lamps employ line emitters that generated light in discrete wavelength intervals. Colored objects that absorb outside these spectral regions appear with a slightly different body color when illuminated with these lamps rather than with a black body radiator such as the light bulb. For these purposes, color 90 or Deluxe lamps have been developed. The emission maximum of the blue phosphor can be shifted towards longer Wavelength by substituting BaMgAli0Oi7:Eu2+ with Sr4Ali4025:Eu2+. The red and green line emitters can be substituted by broad band emitters covering the whole spectral range. For this concept, (Ce,Gd,Tb)MgB5Oi0:Mn has been developed as a red emitter in which energy transfer from Ce3+ via Gd3+ to Mn2+ gives rise to an additional broad band at 630 nm. On the other hand, (Ba,Sr,Ca)2Si04:Eu has been developed as an alternative green-band emitter in which depending on the exact composition, the phosphor emits between 550 and 580 nm with a high quantum yield. Unfortunately, the host lattice is not stable in water, which prevents its deposition on the lamp bulb from aqueous suspensions and for environmental reasons more and more lamps producers use water as the suspending solvent in production instead of butyl acetate. Therefore, it is necessary to develop a new full color emitting phosphors, which has both thermal and chemical stability for application in luminescent lighting. The classical cathode ray tube (CRT) invented as the brown tube more than 100 years ago has developed into a remarkably mature product considering the complexity of its manufacturing process. Cathode rays are a beam of fast electrons, the accelerating voltage in a television picture tube is high (>10 kV). Basic requirements of display phosphors are stability (2000 hr operation) and emission color purity according to the standards set by the European Broadcasting Union (EBU). The blue and green phosphors are still the very cheep ZnS based materials, essentially the same ever since color-TV was introduced in fifties. On the other hand, (Zn,Cd)S, Ag+,C1" was originally used as the red phosphor however, the broad emission centered at 650 nm due to intrinsic donor-acceptor transition leads to rather low lumen equivalent as large fraction of the emission integral lies outside the eye sensitivity curve. For this and the environmental reasons, it has been replaced by the much more expensive Y2O2S:Eu with main emission lines at 612 and 628 nm. Recently, the big electronic companies are trying to enforce flat panel displays e.g. PDPs (plasma display panels) and FEDs (field emission displays). This is because of the fact that when compared to the CRT screen pigments, FED phosphors are required to operate at lower voltages and higher current densities. Although the voltages used in FEDs are only 0.1 to < 2 kV, the high-energy surface excitation on the phosphor particles causes degradation of sulfides, leaving the oxide hosts as the only favorable choice. The phosphor blends used are mixtures of SrTiO3:Pr3+ (red), Y2Si05:Tb (green) and Y2Si05:Ce (blue). However, the white light generation efficiency is very low (-5 lm W"1) and required improvement of phosphor efficacy because of its distinct advantages such as a very wide range of operational temperatures, stability under rugged conditions and wide viewing angle of emission. Similarly, in PDPs blue emitting BaMgAlioOniEu, green emitting Z^SiO^Mn and red emitting (Y,Gd)BO3:Eu are mostly used which shows a screen efficiency of about 1.5 lm W"1, just only half that of a CRT used in today's TV sets. However, the advantages of PDPs over CRTs are that it is not sensitive towards the display manufacturing process, which includes high temperature annealing up to about 600°C and it is stable under the harsh conditions of a Ne/Xe plasma used in PDPs (ion bombardment, VUV radiation). This puts pressure on the development of phosphor for maximum brightness and high stability to replace completely the classical CRTs. On the other hand, the invention of the blue-light emitting diode (LED) based on GaN can be regarded as a triumph of materials chemistry. In principle, it is possible to vary the emission wavelength of blue GaN-based LEDs between 370 nm (band-gap of pure GaN) and 470 nm by increasing the indium (In) content in InGaN devices. Assuming a conversion from the incident light by a phosphor material emitting at 555 nm, InGaN is coated with (Yi.xGdx)3(Ali-yGay)5Oi2:Ce (YAG:Ce) which has broad yellow band varying between 510 and 580 nm. This allows the adjustment of white color temperature from 8000 down to 3000 K. Recently, S^SiCU and S^SiOs have attracted current interest due to their potential applications in developing white light-emitting-diodes (LEDs) because GaN (400 nm chip)-coated with Sr2Si04:Eu2+ or Sr3SiC>5;Eu2+ exhibits better luminous efficiency than that of the industrially available product such as InGaN (460 nm chip)-coated with YAG:Ce. However, the major drawback of this combination is the strongly decreasing overall efficiency upon lowering the color temperature. This can be solved by using a phosphor material that has sufficient absorption at the emission wavelength of the blue diode, the quantum yield should be high under UV/Vis excitation and the FWHM of the emission band should be as small as possible in order to achieve high luminous output. The search for stable inorganic rare-earths phosphors with high absoiption in the near UV/blue spectral region is therefore an attractive research work. Since luminescence materials are a key component for lighting and display concept, research in the field of rare-earths doped oxide phosphors is carried out. Although state-of-the-art materials fulfill most requirements, improvements are still necessary to further boost the efficiency of the phosphor materials. Since it is not expected that materials will be found that perform better than the already established phosphor, the present work concentrates on the improvements of the phosphor by modifying the chemical and niicrostructurai features as well as the crystal structure. Chapter I gives a brief introduction to luminescence in solids, physical aspects and applications. Chapter II describes the synthesis and various experimental techniques employed in the investigation. Chapter III deals with photoluminescence and energy transfer involving charge transfer states in Sr2-xLnxCe04+x/2 (Ln = Eu and Sm) leading to an efficient full color emitting phosphor for luminescent lighting. Chapter IV and V describe charge transfer transition involving interface states associated with transitional nanophaseprecipitates leading to photoluminescence enhancement of SrTiO3:Pr3+,Al3+ and SrAli2Oi9:Pr3+,Ti4\ The light induced charge transfer leading to changing oxidation state of Eu in Sr2Si04 involving transient crystal structure results an efficient material for optical storage is presented in Chapter VI.Photoluminescence due to efficient energy transfer from Ce3+ to Tb3+ and Mn2t in SnAlioSi02o leading to an efficient phosphor for FEDs is presented in Chapter VII. Chapter VIII describes charge transfer transition involving trap states leading to long phosphorescence in SrAl2-xBxO4 (0<x<0.2) and Sr4Al14.xBxO25 (0.1<x<0.4) co-doped with Eu2+ and Dy3+. Chapter IX presents the role of particle size on the charge transfer associated luminescence of GdVO4:Ln3+ (Ln = Eu and Sm). A summary of the important findings and the conclusions arrived on the basis of results from these investigations are presented at the end of the thesis.

The two major topics studied in this dissertation are the gold(I) pyrazolate trimer {[Au(3-R,5-R’)Pz]3} complexes in aqueous chitosan polymer and phosphorescent polymeric nanoparticles based on platinum(II) based complex. The first topic is the synthesis, characterization and optical sensing application of gold(I) pyrazolate trimer complexes within aqueous chitosan polymer. A gold(I) pyrazolate trimer complex, {[Au(3-CH3,5-COOH)Pz]3}, shows high sensitivity and selectivity for silver ions in aqueous media, is discussed for optical sensing and solution-processed organic light emitting diodes (OLEDs) applications. Gold(I) pyrazolate trimer complexes are bright red emissive in polymeric solution and their emission color changes with respect to heavy metal ions, pH and dissolved carbon dioxide. These photophysical properties are very useful for designing the optical sensors. The phosphorescent polymeric nanoparticles are prepared with Pt-POP complex and polyacrylonitrile polymer. These particles show excellent photophysical properties and stable up to >3 years at room temperature. Such nanomaterials have potential applications in biomedical and polymeric OLEDs. The phosphorescent hybrid composites are also prepared with Pt-POP and biocompatible polymers, such as chitosan, poly-l-lysine, BSA, pnipam, and pdadmac. Photoluminescent enhancement of Pt-POP with such polymers is also involved in this study. These hybrid composites are promising materials for biomedical applications such as protein labeling and bioimaging.