Dans la modélisation de la matière dense, et partiellement ionisée, une question importante concerne le traitement des électrons libres. Vis-à-vis des électrons liés, la nature délocalisée et non discrète de ces électrons est responsable d’une différence de traitement, qui est souvent effectuée dans les modélisations des propriétés radiatives des plasmas. Cependant, afin d’éviter les incohérences dans le calcul des spectres d’absorption, tous les électrons devraient, en principe, être décrits dans un même formalisme.Nous utilisons deux modèles variationnels d’atome-moyen : un modèle semi-classique, et un modèle quantique, qui permettent cette égalité de traitement pour tous les électrons. Nous calculons la section-efficace de photo-extinction, en appliquant le cadre de la théorie de la réponse linéaire dynamique à chacun de ces modèles d’atome dans un plasma. Pour cette étude, nous développons et utilisons une approche auto-cohérente, de type random-phase-approximation (RPA), qui, en allant au-delà de la réponse des électrons indépendants, permet d’évaluer les effets collectifs, par l’introduction de la polarisation dynamique. Cette approche s’inscrit dans le formalisme de la théorie de la fonctionnelle de la densité dépendant du temps (TDDFT), appliquée au cas d’un système atomique immergé dans un plasma.Pour les deux modèles, semi-classique et quantique, nous dérivons, et vérifions dans nos calculs, une nouvelle règle de somme, qui permet d’évaluer le dipôle atomique à partir d’un volume fini dans le plasma. Cette règle de somme s’avère être un outil de premier ordre pour le calcul des propriétés radiatives des atomes dans les plasmas denses. / In modeling dense and partially ionized matter, the treatment of the free electrons remains an important issue. Compared to bound electrons, the delocalized and non-discrete nature of these electrons is responsible to treat them differently, which is usually adopted in the modelings of radiative properties of plasmas. However, in order to avoid inconsistencies in the calculation of absorption spectra, all the electrons should be described in the same formalism.We use two variational average-atom models: a semi-classical and a quantum model, which allow this common treatment for all the electrons. We calculate the photo-extinction cross-section, by applying the framework of the linear dynamical response theory to each of these models of an atom in a plasma. For this study, we develop and use a self-consistent approach, of random-phase-approximation (RPA) type, which, while going beyond the independent electron response, permits to evaluate the collective effects by the introduction of the dynamical polarization. This approach uses the formalism of the time dependent density functional theory (TDDFT), applied in the case of an atomic system immersed in a plasma.For both models, semi-classical and quantum, we derive and verify in our calculations, a new sum rule, which allows the evaluation of the atomic dipole from a finite volume in the plasma. This sum rule turns out to be a crucial device in the calculation of radiative properties of atoms in dense plasmas.

Narrow silicon nanowires host a rich set of physical phenomena. Understanding these phenomena will open new opportunities for applications of silicon nanowires in optoelectronic devices and adds more functionality to silicon especially in those realms that bulk silicon may not operate remarkably. Compatibility of silicon nanowires with the mainstream fabrication technology is also advantageous. The main theme of this thesis is finding the possibility of using silicon nanowires in light sources; laser and light emitting diodes. Using Tight Binding (TB) and ab-initio Density Functional Theory (DFT) methods it was shown that axial strain can induce significant changes in the effective mass, density of states and bandgap of silicon nanowires. Generality of the observed effects was proven by investigating nanowires of different crystallography, diameter and material (e.g. germanium nanowires). The observed direct to indirect bandgap conversion suggests that strain is able to modulate the light emission properties of silicon nanowires. To investigate this possibility, spontaneous emission time was formulated using perturbation theory including Longitudinal Optical (LO) and Acoustic (LA) phonons. It was observed that corresponding to bandgap conversion, the spontaneous emission time can be modulated by more than one order of magnitude. This emanates from bandgap conversion and symmetry change of wave function in response to strain. A mechanism for population inversion was proposed in the thesis which is based on the Ensemble Monte Carlo (EMC) study of carrier statistics in direct and indirect conduction sub bands. By calculating all possible electron-phonon scattering mechanisms which may deplete the already populated indirect subband, it was shown that at different temperatures and under different electric fields there is a factor of 10 difference between the population of indirect and direct sub bands. This suggests that population inversion can be achieved by biasing an already strained nanowire in its indirect bandgap state. The light emission is possible then by releasing or inverting the strain direction. A few ideas of implementing this experiment were proposed as a patent application. Furthermore the photo absorption of silicon nanowires was calculated using TB method and the role of diameter, optical anisotropy and strain were investigated on band-edge absorption.

Narrow silicon nanowires host a rich set of physical phenomena. Understanding these phenomena will open new opportunities for applications of silicon nanowires in optoelectronic devices and adds more functionality to silicon especially in those realms that bulk silicon may not operate remarkably. Compatibility of silicon nanowires with the mainstream fabrication technology is also advantageous. The main theme of this thesis is finding the possibility of using silicon nanowires in light sources; laser and light emitting diodes. Using Tight Binding (TB) and ab-initio Density Functional Theory (DFT) methods it was shown that axial strain can induce significant changes in the effective mass, density of states and bandgap of silicon nanowires. Generality of the observed effects was proven by investigating nanowires of different crystallography, diameter and material (e.g. germanium nanowires). The observed direct to indirect bandgap conversion suggests that strain is able to modulate the light emission properties of silicon nanowires. To investigate this possibility, spontaneous emission time was formulated using perturbation theory including Longitudinal Optical (LO) and Acoustic (LA) phonons. It was observed that corresponding to bandgap conversion, the spontaneous emission time can be modulated by more than one order of magnitude. This emanates from bandgap conversion and symmetry change of wave function in response to strain. A mechanism for population inversion was proposed in the thesis which is based on the Ensemble Monte Carlo (EMC) study of carrier statistics in direct and indirect conduction sub bands. By calculating all possible electron-phonon scattering mechanisms which may deplete the already populated indirect subband, it was shown that at different temperatures and under different electric fields there is a factor of 10 difference between the population of indirect and direct sub bands. This suggests that population inversion can be achieved by biasing an already strained nanowire in its indirect bandgap state. The light emission is possible then by releasing or inverting the strain direction. A few ideas of implementing this experiment were proposed as a patent application. Furthermore the photo absorption of silicon nanowires was calculated using TB method and the role of diameter, optical anisotropy and strain were investigated on band-edge absorption.

A hybrid quantum-classical approach to the interaction of atomic clusters with intense laser fields in the vacuum ultra-violet (VUV) has been developed. Much emphasis is put on localized electrons, those quasi-free electrons which localize about the ions and screen them. These electrons set a time scale, which is used to interpolate between the quantum, rate based description of photon absorption by bound electrons and the classical, deterministic description of the cluster nano-plasma. Typical observables such as total energy absorption, electron and ion spectra are in very good agreement with the experimental findings. A scheme to probe the multi-electron motion in clusters with attosecond laser pulses is introduced. Conventional final state measurements in the energy domain cannot provide information about earlier states of the system due to the incoherent nature of the dynamics. Time-delayed attosecond pulses in the extreme ultra-violet (XUV) are used to probe the transient charging of the cluster ions during the interaction with the laser by measuring the kinetic energy of the electrons detached by the probe pulse. This information is otherwise lost at later times due to recombination. Knowledge about the transient charging would also shed more light on the still controversial subject of the energy absorption mechanisms in the VUV regime. Moving to shorter duration of the excitation, the characteristic time-scales for ionization and plasma equilibration are inversed. An attosecond laser pulse in the VUV regime creates a dense, warm nano-plasma far from equilibrium. Time-delayed attosecond pulses in the XUV probe then both the creation and the relaxation. The latter shows the breakup of the Bogoliubov hierarchy of characteristic times, indicating strongly-coupled plasma dynamics and drawing parallels to the relaxation of extended ultra-cold neutral plasmas with millions of particles.

A hybrid quantum-classical approach to the interaction of atomic clusters with intense laser fields in the vacuum ultra-violet (VUV) has been developed. Much emphasis is put on localized electrons, those quasi-free electrons which localize about the ions and screen them. These electrons set a time scale, which is used to interpolate between the quantum, rate based description of photon absorption by bound electrons and the classical, deterministic description of the cluster nano-plasma. Typical observables such as total energy absorption, electron and ion spectra are in very good agreement with the experimental findings. A scheme to probe the multi-electron motion in clusters with attosecond laser pulses is introduced. Conventional final state measurements in the energy domain cannot provide information about earlier states of the system due to the incoherent nature of the dynamics. Time-delayed attosecond pulses in the extreme ultra-violet (XUV) are used to probe the transient charging of the cluster ions during the interaction with the laser by measuring the kinetic energy of the electrons detached by the probe pulse. This information is otherwise lost at later times due to recombination. Knowledge about the transient charging would also shed more light on the still controversial subject of the energy absorption mechanisms in the VUV regime. Moving to shorter duration of the excitation, the characteristic time-scales for ionization and plasma equilibration are inversed. An attosecond laser pulse in the VUV regime creates a dense, warm nano-plasma far from equilibrium. Time-delayed attosecond pulses in the XUV probe then both the creation and the relaxation. The latter shows the breakup of the Bogoliubov hierarchy of characteristic times, indicating strongly-coupled plasma dynamics and drawing parallels to the relaxation of extended ultra-cold neutral plasmas with millions of particles.