Universiẗat, Diss., 2005--Düsseldorf.

Darmstadt, Techn. Universiẗat, Diss., 2007.

Stuttgart, Univ., Diss., 2005.

Techn. Universiẗat, Diss., 2002--Berlin.

Techn. Univ., Diss., 2003--Darmstadt

Techn. Universiẗat, Diss., 2004--Darmstadt.

Techn. Universiẗat, Diss., 2006--Darmstadt.

This thesis is devoted to studies of high temperature superconductors and related materials using the angle-resolved photoemission spectroscopy (ARPES). Though there is no accepted theory of superconductivity, encompassing high-$T_{\\rm c}$ materials, there is enough evidence to believe that superconductivity can always be interpreted as stemming from pairing of electrons by interaction with bosons, and $T_{\\rm c}$ is determined by effectiveness of such a pairing. ARPES, owing to the possibility of recording energy- and momentum-resolved electronic spectrum, is a powerful probe of the normal-state electronic structure, which is an important prerequisite for the superconductivity, and implications of the electron pairing, such as emergence of the superconducting gap and finer features below $T_{\\rm c}$. Based on ARPES data one can quantify the electronic interactions by analysis of kinks in the dispersion curves, spectral line widths etc. In current work new methods of ARPES data analysis were developed and applied to the spectra taken from cuprate and iron-based high-$T_{\\rm c}$. The possibility to analyze the macroscopic response of solids in the normal state as well as in the superconducting and charge-density-wave phases basing on the experimentally measured renormalized band dispersion and anisotropic superconducting and charge-density-wave gap was shown. The thesis consists of five parts. Part 1 introduces the employed notions of electrons in solids and methods of their investigation. Part 2 describes the Voigt fitting procedure, allowed for purification of the spectra from resolution effects, and, consequently, for determination of the quasiparticle scattering rate with enhanced precision. In Part 3 the calculation of the temperature-dependent Hall coefficient in the charge-density-wave-bearing 2H-TaSe$_2$ from the band dispersion, measured in ARPES, is presented, and comparison to the independent magnetotransport measurements is shown. The extraction of the band dispersion of Ba$_{1-x}$K$_{x}$Fe$_2$As$_2$ and LiFeAs from ARPES data can be found in Part 4. Agreement with Hall effect measurements on the same samples is demonstrated. Part 5 introduces the extraction of the momentum-dependent superconducting gap in iron arsenides from fitting of ARPES spectra to Dynes function. The superfluid density was calculated from the band dispersion and the superconducting gap, measured in ARPES, and compared to the ones measured by different techniques.

Graphene, a two dimensional single layer of graphite, attracts a lot of attention of researchers around the globe due to its remarkable physical properties and application potential. The origin can thereby be found in the peculiar electronic structure since graphene is a zero gap semi-conductor with a linear energy dispersion in the vicinity of the Fermi level. Consequently, the charge carriers in graphene mimic massless Dirac Fermions which brings principles of quantum electrodynamics and exotic effects like Klein tunneling into a bench-top experiment. Modifying the electronic and/or crystal structure structure by functionalization might therefore as well lead to new tantalizing physical properties, novel compound materials based on graphene like graphane (fully hydrogenated graphene) or flourographene (fluorinated graphene), and ultimately new applications. In this work, the influences on the electronic structure of graphene are investigated with photoemission spectroscopies after covalent functionalization by atomic hydrogen and ionic functionalization with potassium. Regarding hydrogenation, the formation of tunable bandgap is observed along with a full recovery of the electronic properties of graphene upon removing the hydrogen by thermal annealing. Using high resolution x-ray photoemission and molecular dynamics simulations, the formation of a C4H structure is predicted for substrate supported graphene at a saturation H-coverage of 25%, due to a preferential para- arrangement of hydrogen atoms. In fully electron doped, hydrogenated graphene the formation of dispersionless hydrogen impurity state is observed with angle-resolved photoemission spectroscopy. This flat state is extended over the whole Brillouin zone and according to calculations not localized. Potassium-doped graphene shows a similar doping level as its 3D parent component, the graphite intercalation compound KC8. Investigating the electron-phonon coupling in doped graphene, by direct derivation of the Eliashberg-function, shows an asymmetric coupling strength along the high-symmetry directions in the Brillouin Zone of graphene. In the K-M direction additional low energetic contributions could be identified which may originate from out-of-plane phonon modes. Regarding the electron-phonon-coupling strength of the high energy in-plane phonon modes a reasonable agreement with theoretical predictions is found.

Ungesättigte Kohlenwasserstoffketten wie Poly(para)-Phenyl stellen eine Gruppe interessanter Materialien für das sich schnell entwickelnde Gebiet der Organischen Leuchtdioden (OLEDs) dar. Entsprechende Materialien sollten sich durch schwach gebundene Pi-Elektronen auszeichnen. Poly(para)-Phenyl erfüllt diese Bedingung, seine Modellpolymerepara-Hexaphenyl und para-Quaterphenyl ebenso.In der vorliegenden Arbeit werden photoelektronenspektros-kopische Messungen an diesen Materialien vorgestellt, wobeiBenzoesäure und Oligomere der Länge 2,3,4,6 untersuchtwurden. Es wird gezeigt, dass sich die Bandstruktur der unendlich langen Poly(para)-Phenyl-Kette auch anhand seiner kürzeren Oligomere mit bis zu sechs Wiederholeinheiten ermitteln lässt und mit entsprechenden theoretischen Berechnungen gut übereinstimmt. Hierzu wurdenorientierte dünne Schichten der Oligomere para-Hexaphenyl im Ultrahochvakuum hergestellt und anschließend mittels winkelaufgelöster Photoelektronenspektroskopie (ARUPS) am Berliner Speicher-Synchrotron BESSY I vermessen. Die Orientierung der dünnen Filme wird anhand der aus den Symmetrieüberlegungen entwickelten Auswahlregeln aus dem Vergleich der winkelaufgelösten Spektren nachgewiesen und durch AFM-Messungen (Atomic Force Microscopy) bestätigt. Entsprechende Untersuchungen an SAM-Schichten (Self Assembled Monolayer) aus Biphenylthiol und para-Terphenylthiol werden vorgestellt. XPS-Messungen (X-ray Photoelectron Spectroscopy) an den orientierten para-Hexaphenyl-Proben werden mit der aus den Bandstruktur-Rechnungen gewonnenen Zustandsdichteund UPS-Messungen verglichen. Aus den XPS-Messungen an den para-Hexaphenyl- und para-Quaterphenyl-Proben werden durch Auswertung der Shake-up-Satellitenstruktur der C1s-Peaks die Bandlücken der Materialien bestimmt. Im Rahmen von Voruntersuchungen wurden strahleninduzierte Schäden an gesättigten Kohlenwasserstoffketten mittels XPS festgestellt, die aber bei den ungesättigten Kohlenwasserstoffketten nicht auftreten.