Ultra-fine grained materials with sub-micrometer grain size exhibit superior mechanical properties when compared with conventional fine-grained material as well as coarse-grained materials. Severe plastic deformation (SPD) techniques have been shown to be an effective way to modify the microstructure in order to improve the mechanical properties of the material. Crystalline materials require dislocations to accommodate plastic strain gradients and maintain lattice continuity. The lattice curvature exists due to the net dislocation that left behind in material during deformation. The characterization of such defects is important to understand deformation accumulation and the resulting mechanical properties of such materials. However, traditional techniques are limited. For example, the spatial resolution of EBSD is insufficient to study materials processed via SPD, while high dislocation densities make interpretations difficult using conventional diffraction contrast techniques in the TEM. A new technique, precession electron diffraction (PED) has gained recognition in the TEM community to solve the local crystallography, including both phase and orientation, of nanocrystalline structures under quasi-kinematical conditions. With the assistant of precession electron diffraction coupled ASTARÔ, the structure evolution of equal channel angular pressing processed commercial pure titanium is studied; this technique is also extended to two-phase titanium alloy (Ti-5553) to investigate the existence of anisotropic deformation behavior of the constituent alpha and beta phases.

Dynamical effects are known to reduce the signal to noise ratio in EMCD measurements making them highly dependent on sample thickness. Precession of the electron beam has been shown to reduce these effects in ordinary crystallography. This work investigates precession of the electron beam as a method of reducing the dynamical effects in EMCD using simulations. Simulations are run on BCC Fe in two and three beam conditions. The results show significant effects on the EMCD signal. However, whether these improve the signal quality seems dependent on sample orientation and thickness range. The initial findings reported here are promising and motivate further research.

Title: Structure analysis of some transition metal silicides using X-ray diffraction and dynamical refinement against electron diffraction data Author: Cinthia Antunes Corrˆea Department: Physics of Materials Supervisor: prof. RNDr. Miloš Janeček, CSc., Department of Physics of Materials Abstract: This thesis presents the crystal structure analysis of several transition metal silicides. The crystal structures were studied primarily by precession electron diffraction tomography (PEDT) employing the dynamical refinement, a method recently developed for accurate crystal structure refinement of electron diffraction data. The optimal values of the parameters of the method were proposed based on the comparison between the dynamical refinement of PEDT data and a high- quality reference structure. We present the results of the comparison using a Ni2Si nanowire with the diameter of 15 nm. The average atomic distance between the model obtained by the dynamical refinement on PEDT data and the one by single crystal X-ray diffraction was 0.006 ˚A. Knowing the accuracy and limitations of the method, the crystal structure of Ni3Si2 was redetermined on a nanowire with 35 nm of diameter. The model obtained had an average error in the atomic posi- tions of 0.006 ˚A. These results show that the accuracy achieved by the dynamical...

La diffraction électronique en mode précession (PED) est une méthode récente d’acquisition de clichésde diffraction permettant de minimiser les interactions dynamiques. L’objectif de cette thèse est dedévelopper une méthodologie d’acquisition et de traitement des clichés de diffraction en modeprécession afin de mesurer les champs de déformation en combinant une résolution spatialenanométrique et une sensibilité inférieure à 10-3 typiquement obtenues par d’autres techniques usuellesde microscopie, telle que l’imagerie haute-résolution. Les mesures ont été réalisées sur un JEOL 2010Aéquipé du module de précession Digistar produit par la société Nanomegas.Un système modèle constitué de multicouches Si/SiGe de concentrations connues en Ge a été utilisépour évaluer les performances de la méthodologie développée dans cette thèse. Les résultats indiquentune sensibilité sur la mesure de contraintes qui atteint, au mieux, 1x10-4 et un accord excellent avec lescontraintes simulées par éléments finis. Cette nouvelle méthode a pu ensuite être appliquée sur despuits quantique d’InGaAs et sur des transistors de type Ω−gate.La dernière partie traite d’un nouvel algorithme permettant d’évaluer de manière robuste et rapide lapolycristallinité des matériaux à partir d’une mesure PED. Nous donnons des exemples d’applicationde cette méthode sur divers dispositifs / Precession electron diffraction (PED) is a recent technique used to minimize acquired diffractionpatterns dynamic effects. The primary intention of this PhD work is to improve PED (PrecessionElectron Diffraction) data analysis and treatment methodologies in order to measure the strain at thenanoscale. The strain measurement is intended to reach a 10-3 strain precision as well as usualmicroscopy techniques like high-resolution imaging. To this end, measurements were made with aJEOL 2010A with a Digistar Nanomegas precession module.The approach developed has been used and tested by measuring the strain in a Si/SiGe multilayeredreference sample with a known Ge Content. Strain measurements reached 1x10-4 sensitivity withexcellent finite element strain simulation agreement. This process has been also applied to measure thestrain in microelectronic InGaAs Quantum Well and an "Ω-gate" experimental transistor devices.The second approach developed has been made to provide a robust means of studying electrontransparent nanomaterial polycrystallinity with precession. Examples of applications of this analysismethod are shown on different devices.

La diffraction électronique en mode précession (PED) est une méthode récente d’acquisition de clichésde diffraction permettant de minimiser les interactions dynamiques. L’objectif de cette thèse est dedévelopper une méthodologie d’acquisition et de traitement des clichés de diffraction en modeprécession afin de mesurer les champs de déformation en combinant une résolution spatialenanométrique et une sensibilité inférieure à 10-3 typiquement obtenues par d’autres techniques usuellesde microscopie, telle que l’imagerie haute-résolution. Les mesures ont été réalisées sur un JEOL 2010Aéquipé du module de précession Digistar produit par la société Nanomegas.Un système modèle constitué de multicouches Si/SiGe de concentrations connues en Ge a été utilisépour évaluer les performances de la méthodologie développée dans cette thèse. Les résultats indiquentune sensibilité sur la mesure de contraintes qui atteint, au mieux, 1x10-4 et un accord excellent avec lescontraintes simulées par éléments finis. Cette nouvelle méthode a pu ensuite être appliquée sur despuits quantique d’InGaAs et sur des transistors de type Ω−gate.La dernière partie traite d’un nouvel algorithme permettant d’évaluer de manière robuste et rapide lapolycristallinité des matériaux à partir d’une mesure PED. Nous donnons des exemples d’applicationde cette méthode sur divers dispositifs / Precession electron diffraction (PED) is a recent technique used to minimize acquired diffractionpatterns dynamic effects. The primary intention of this PhD work is to improve PED (PrecessionElectron Diffraction) data analysis and treatment methodologies in order to measure the strain at thenanoscale. The strain measurement is intended to reach a 10-3 strain precision as well as usualmicroscopy techniques like high-resolution imaging. To this end, measurements were made with aJEOL 2010A with a Digistar Nanomegas precession module.The approach developed has been used and tested by measuring the strain in a Si/SiGe multilayeredreference sample with a known Ge Content. Strain measurements reached 1x10-4 sensitivity withexcellent finite element strain simulation agreement. This process has been also applied to measure thestrain in microelectronic InGaAs Quantum Well and an "Ω-gate" experimental transistor devices.The second approach developed has been made to provide a robust means of studying electrontransparent nanomaterial polycrystallinity with precession. Examples of applications of this analysismethod are shown on different devices.