Konstanz, Univ., Diss., 2008.

Frankfurt (Main), Universiẗat, Diss., 2008. / Erscheinungsjahr an der Haupttitelstelle: 2007.

München, Techn. Univ., Diss., 2001.

University, Diss., 2003--Stuttgart.

Background The Red proteins of lambda phage mediate probably the simplest and most efficient homologous recombination reactions yet described. However the mechanism of dsDNA recombination remains undefined. Results Here we show that the Red proteins can act via full length single stranded intermediates to establish single stranded heteroduplexes at the replication fork. We created asymmetrically digestible dsDNA substrates by exploiting the fact that Redα exonuclease activity requires a 5' phosphorylated end, or is blocked by phosphothioates. Using these substrates, we found that the most efficient configuration for dsDNA recombination occurred when the strand that can prime Okazaki-like synthesis contained both homology regions on the same ssDNA molecule. Furthermore, we show that Red recombination requires replication of the target molecule. Conclusions Hence we propose a new model for dsDNA recombination, termed 'beta' recombination, based on the formation of ssDNA heteroduplexes at the replication fork. Implications of the model were tested using (i) an in situ assay for recombination, which showed that recombination generated mixed wild type and recombinant colonies; and (ii) the predicted asymmetries of the homology arms, which showed that recombination is more sensitive to non-homologies attached to 5' than 3' ends. Whereas beta recombination can generate deletions in target BACs of at least 50 kb at about the same efficiency as small deletions, the converse event of insertion is very sensitive to increasing size. Insertions up to 3 kb are most efficiently achieved using beta recombination, however at greater sizes, an alternative Red-mediated mechanism(s) appears to be equally efficient. These findings define a new intermediate in homologous recombination, which also has practical implications for recombineering with the Red proteins.

Meiosis is a specialized division of germ cells in sexually reproducing organisms, which is a fundamental process with key implications for evolution and biodiversity. In two consecutive rounds of cell division, meiosis I and meiosis II, a normal, diploid set of chromosome is halved. From diploid mother cells haploid gametes are generated to create genetic individual cells. This genetic uniqueness is obtained during prophase of meiosis I by essential meiotic processes in meiotic recombination, as double strand break (DSB) formation and repair, formation of crossovers (CO) and holiday junctions (HJs). Checkpoint mechanisms ensure a smooth progress of these events. Despite extensive research key mechanisms are still not understood. Based on an analysis of Massive Parallel Sequencing (MPS) data I could identify 2 genes, Mcmdc2 and Prr19, with high implication in meiotic recombination. In the absence of Mcmdc2 both sexes are infertile and meiocytes arrest at a stage equivalent to mid-­‐pachytene in wt. Investigations of the synaptonemal complex (SC) formation revealed severe defects suggesting a role for MCMDC2 in homology search. Moreover, MCMDC2 does not seem to be essential for DSB repair, as DSB markers of early and mid recombination nodules, like DMC1 and RPA, are decreased in oocytes. Nevertheless, late recombination nodules, which are positive for MutL homolog 1 (MLH1), do not form in both sexes. The absence of the asynapsis surveillance checkpoint mechanism in Hormad2 deficient ovaries with Mcmdc2 mutant background allowed survival of oocytes. This points into the direction that Mcmdc2 knock­out oocytes get eliminated after prophase I due to failed homologous synapsis. Interestingly, MCMDC2 contains a conserved helicase domain, like the MCM protein family members MCM8 and MCM9. I therefore hyphothesize that Mcmdc2 promotes homolgy search.

Die Dissertation demonstriert ein Verfahren zur Messung der normalisierten Rekombinationsstärke (Gamma) von Versetzungen in blockerstarrten Siliziumsolarzellen. Es basiert auf der topografischen Messung der internen Quanteneffizienz IQE und der Versetzungsdichte. Unter Verwendung des theoretischen Modells von Donolato und Simulationen mit dem Programm PC1D werden für einzelne Versetzungscluster aus dem gemessenen Zusammenhang zwischen der IQE und der Versetzungsdichte die Gamma-Werte bestimmt. Zur Messung der Versetzungsdichte wurden neue Methoden der automatischen Bildanalyse zur Erkennung von angeätzten Kristalldefekten mit dem Computer entwickelt. Die in den Solarzellen gemessenen Gamma-Werte variieren über ca. eine Größenordnung innerhalb weniger Millimeter. Regelmäßig angeordnete Versetzungen haben kleinere Gamma-Werte gegenüber ungeordneteren Verteilungen. Der Gamma-Wert korreliert signifikant mit den Prozesstemperaturen bei der Solarzellherstellung. Es wird gezeigt, in welcher Weise eine Remote-Plasma-Wasserstoffpassivierung die lokale IQE und die Gamma-Werte beeinflusst.

This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect distributions involving donors at the CdS/absorber interface and deep acceptors in the chalcopyrite bulk, increase upon alloying CuInSe2 with S. The band alignments within the Cu(In1-xGax)(Se1-ySy)2 system are determined using the energy position of the bulk acceptor state as a reference. The band gap enlargement under Ga alloying is accommodated almost exclusively in the rise of the conduction band edge, whereas the increase of band gap upon alloying with S is shared between comparable valence and conduction band offsets. The extrapolated band discontinuities [delta]EV(CuInSe2/CuInS2) = -0.23 eV, [delta]EC(CuInSe2/CuInS2) = 0.21 eV, [delta]EV(CuInSe2/CuGaSe2) = 0.036 eV, and [delta]EC(CuInSe2/CuGaSe2) = 0.7 eV are in good agreement with theoretical predictions. Current-voltage analysis of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 devices reveals recombination barriers which follow the band gap energy of the absorber irrespective of alloy composition, as expected for dominant recombination in the chalcopyrite bulk. In turn, the recombination at the active junction interface prevails in Cu-rich devices which display substantially smaller barriers when compared to the band gap energy of the absorber. The result indicates that the Cu-stoichiometry is the driving compositional parameter for the charge carrier recombination in the chalcopyrite heterojunctions under investigations.

This work investigates the defect energies, band alignments, and charge carrier recombination in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite thin films and the interrelationship with the alloy composition. Photoluminescence spectroscopy of investigated Cu-poor Cu(In,Ga)(Se,S)2 layers generally shows broad emission lines with the corresponding maxima shifting towards higher energies under decreasing temperature or under increasing excitation power. Admittance spectroscopy of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 chalcopyrite devices shows that the activation energies of the dominant defect distributions involving donors at the CdS/absorber interface and deep acceptors in the chalcopyrite bulk, increase upon alloying CuInSe2 with S. The band alignments within the Cu(In1-xGax)(Se1-ySy)2 system are determined using the energy position of the bulk acceptor state as a reference. The band gap enlargement under Ga alloying is accommodated almost exclusively in the rise of the conduction band edge, whereas the increase of band gap upon alloying with S is shared between comparable valence and conduction band offsets. The extrapolated band discontinuities [delta]EV(CuInSe2/CuInS2) = -0.23 eV, [delta]EC(CuInSe2/CuInS2) = 0.21 eV, [delta]EV(CuInSe2/CuGaSe2) = 0.036 eV, and [delta]EC(CuInSe2/CuGaSe2) = 0.7 eV are in good agreement with theoretical predictions. Current-voltage analysis of Cu-poor ZnO/CdS/Cu(In,Ga)(Se,S)2 devices reveals recombination barriers which follow the band gap energy of the absorber irrespective of alloy composition, as expected for dominant recombination in the chalcopyrite bulk. In turn, the recombination at the active junction interface prevails in Cu-rich devices which display substantially smaller barriers when compared to the band gap energy of the absorber. The result indicates that the Cu-stoichiometry is the driving compositional parameter for the charge carrier recombination in the chalcopyrite heterojunctions under investigations.

Die heutige optische Informationsverarbeitung erfordert neue Materialien, die Licht effektiv verarbeiten, steuern und speichern können. Photorefraktive (PR) Materialien sind dafür sehr interessant. In diesen Materialien entsteht bei inhomogener Beleuchtung (z.B. mit einem Intererenzmuster) über Ladungsträgergenerierung und Einfang der Ladungsträger in Fallen ein Raumladungsfeld. Dieses wird über den elektrooptischen Effekt in eine räumliche Modulation des Brechungsindex umgesetzt. Letztendlich führt somit die inhomogene Beleuchtung eines PR-Materials zu einer räumlich variierenden Änderung des Brechungsindex. Vor ca. 10 Jahren wurde entdeckt, dass auch Polymere einen PR-Effekt aufweisen können. Die Ansprechzeit dieser Materialien wird dabei wesentlich durch die Dynamik der Ladungsträger (bestimmt durch Erzeugung, Transport, Einfang in Fallen etc.) begrenzt. Bis zu Beginn dieser Arbeit war es noch nicht gelungen, einen quantitativen Zusammenhang zwischen der Ladungsträgerdynamik und der Ansprechzeit des PR-Effekts experimentell nachzuweisen. In dieser Arbeit wird ein Weg aufgezeigt, durch photophysikalische Experimente unter verschiedenen Beleuchtungsbedingungen alle photophysikalischen Größen experimentell zu bestimmen, die den Aufbau des Raumladungsfelds in organischen photorefraktiven Materialien bestimmen. So konnte durch Experimente unter Beleuchtung mit kurzen Einzelpulsen sowohl die Beweglichkeit der freien Ladungsträger als auch die charakteristischen Parameter flacher Fallen ermittelt werden. Zur Bestimmung der Dichte tiefer Fallen wurde die Intensitätsabhängigkeit des stationären Photostroms untersucht. Durch die analytische Lösung des bestimmenden Gleichungssystems konnte gezeigt werden, dass die Sublinearität der Intensitätsabhängigkeit des Photostroms primär mit dem Verhältnis zwischen Entleerungs- und Einfangkoeffizienten tiefer Fallen korreliert. Zur unabhängigen Bestimmung des Entleerungskoeffizienten der tiefen Fallen wurden Doppelpulsexperimente mit variabler Verzögerungszeit zwischen den Pulsen verwendet. Mit den erhaltenen Parametern konnte dann das untere Limit der zum Aufbau des Raumladungsfelds notwendigen Zeit abgeschätzt werden. Diese Werte wurden mit den gemessenen photorefraktiven Ansprechzeiten verglichen. Es zeigt sich, dass weder die Photogeneration noch der Transport der Ladungsträger die Geschwindigkeit des Aufbaus des Raumladungsfeldes limitiert. Stattdessen konnte erstmals quantitativ nachgewiesen werden, dass die Dynamik des Raumladungsfelds in den hier untersuchten PR-Materialien durch das Füllen tiefer Fallen mit photogenerierten Ladungsträgern bestimmt wird. Dabei spielt das Verhältnis zwischen dem Einfang- und dem Rekombinationskoeffizienten eine wesentliche Rolle. Weiterhin wurde die Dynamik des Aufbaus des Raumladungsfelds bei unterschiedlichen Vorbeleuchtungsbedingungen quantitativ simuliert und mit den experimentellen PR-Transienten verglichen. Die gute Übereinstimmung zwischen den simulierten und gemessenen Transienten erlaubte es abschließend, die kritischen Parameter, die die Dynamik des PR-Effekts in den untersuchten Polymeren begrenzen, zu identifizieren. / The ongoing development of information processing requires new materials that are capable of effective light modulation, processing or storage. Photorefractive (PR) materials characterized by a reversible light-induced change of the refractive index have been effectively used for different optical applications. When a photorefractive medium is inhomogeneously irradiated, using for example an interference pattern, the generation, transport and trapping of the charge carriers results in the formation of a space charge field. The spatial modulation of the space charge field is transformed through the electro-optical effect into a modulation of the refractive index.<br /> While photorefractive crystals are well known since the discovery of the PR effect in 1966, the photorefractive effect in polymers has only recently been demonstrated. The flexibility of material composition and thus its parameters along with easy processability of polymer materials essentially extends the range of possible applications of photorefractive materials. The response time of PR polymers is defined by the charge carrier dynamics including generation, transport, trapping etc. But a relation between the charge carriers dynamics and the response time of PR effect has not yet been proven experimentally. In this work a method for the experimental determination of all photo-physical parameters defining the formation of the space charge field in organic photorefractive materials has been proposed for the first time. It is based on the analysis of the photocurrent measured under different irradiation conditions such as continuous and pulse irradiation with different intensities, the variation of the pulse length, the number of pulses or the delay between pulses. Thus, the irradiation with single short pulses allowed to determine the mobility of free charge carriers as well as the characteristic parameters of shallow traps. In order to determine the density of deep traps, the intensity dependence of the steady-state photocurrent was investigated. The determining system of equations was analytically solved and it has been shown that the sublinear dependence of the photocurrent on intensity is primary correlated with the ratio of detrapping and trapping coefficients for deep traps. The detrapping coefficient of deep traps was independently determined from double-pulse experiments in which the delay between two pulses was varied. The dynamics of the space charge field formation has been numerically simulated, using the obtained photophysical parameters, and proven to coincide well with the experimentally determined dynamics of the PR effect. This allowed to relate the parameters of the individual processes participating in the formation of the space charge field to the dynamics of the PR effect in the investigated polymers. These results show that neither photogeneration nor transport of the charge carriers do limit the formation of the space charge field. It is demonstrated that in the investigated PR materials the dynamics of the space charge field is limited by the filling of deep traps with the photogenerated charge carriers.