In this work, the capacitive response of organic electronic devices is analysed. Particular attention is given to small-molecule organic solar cells, with the purpose of deriving an equivalent circuit for the small-signal response of these devices. The different components characterising the solar cells electrical response are individuated and discussed and a specific physical meaning is associated with each element of the equivalent circuit. In the experimental section, the capacitive elements of the equivalent circuit are characterised by analysing organic diodes and solar cells. It is found that the capacitance of an organic solar cell is a combination of four components: the dielectric response of the materials, the depletion regions formed at the interfaces, the accumulation of free and trapped charge carriers. The depletion regions formed in organic doped semiconductors are characterised by analysing organic p/n homojunction diodes composed of Zinc-Phtalocyanine (ZnPc). The results demonstrate that the mechanisms involved in the formation of depletion zones in organic semiconductors can be described by the classical Mott-Schottky theory. This allows to estimate the free charge carrier density of doped layers with capacitance measurements. In addition, the current-voltage characteristics of organic p/n homojunctions are found not to obey the classical Shockley theory. It is demonstrated that charge carrier tunnelling is the cause of this discrepancy and an analytic model is used to describe the current-voltage characteristics. The accumulation of free charge carriers is found to induce capacitance effects typical of relaxation semiconductors. In presence of unbalanced charge carriers injection, negative capacitance values are observed. It is shown that in different organic semiconductor devices, the injection of minority charge carriers induces a depletion in the majority concentration, resulting in a negative value of the accumulation capacitance. Finally, the capacitance associated to trap states in ZnPc:C60 organic solar cells is analysed. The spatial position and occupation mechanisms of the traps are estimated. The trapping mechanism in small-molecule organic solar cells is clarified and the energetic distribution of these trap states is estimated being a Gaussian function with 55 meV width, a density of 3.5 × 1016 cm−3 and centred 0.458 eV below the electron transport level. Trap states are also found to act as recombination centres, limiting the efficiency of organic solar cells.

In der vorliegenden Arbeit wird die grundsätzliche Eignung von yttriumstabilisiertem Hafniumoxidschichten als neues Dielektrikum für Speicherkondensatoren in dynamischen Halbleiterspeichern (DRAM) untersucht. Bei diesem Werkstoff handelt es sich um einen high-k Isolator der neuen Generation mit großem anwendungstechnischem Potential zur Substitution der seit vier Jahrzehnten eingesetzten siliciumbasierten Materialien. Daraus abgeleitet ergibt sich die Aufgabenstellung einer umfassenden Charakterisierung der praxisrelevanten Eigenschaften der Oxidschicht, umfassend in dem Sinne, dass aus dem Ergebnis eine wissenschaftlich fundierte Beurteilung zu den Aussichten einer Überführung in die Produktion abgeleitet werden kann. Es wird aufgezeigt, dass der Wechsel zu high-k Isolatoren erhebliche technische Neuerungen voraussetzt und weitere Entwicklungsarbeit nötig ist. Zusammenfassend kann erstmals die Eignung der ALD-Technik zur Herstellung dünnster yttriumstabilisierter Hafniumoxidschichten und deren Verwendung als Isolatorwerkstoff in zukünftigen mikroelektronischen Speicherkondensatoren anhand einer umfangreichen und anwendungstechnisch fokussierten Mikrostrukturcharakterisierung nachgewiesen werden. / This thesis investigates the basic suitability of yttrium stabilized hafnium oxide as a new dielectric for storage capacitors in dynamic random access memory (DRAM) semiconductor devices. This material is a so-called high- insulator with high dielectric constant. It is a good candidate to replace the silicon-based materials that are used for four decades now. Therefore it is necessary to extensively investigate selected properties of the oxide material. Extensively in terms of significant results that enable or object the applicability for the production process. It shows that the shift to high-insulators requires significant technological innovations and that further development work is necessary. The suitability of the ALD technique for depositing thin films of yttrium oxide and hafnium oxide is identified. The suitability of yttrium stabilized hafnium oxide layers as a dielectric material in future microelectronic storage capacitors can be given for the first time.