The graphene-polymer SA thin film using solution blending method and atomic layer graphene as saturable absorber (SA) used to generate femtosecond laser pulse were measured. Stable soliton-like pulses with the pulsewidth of 403 fs and 432 fs, the spectral linewidth of 6.32 nm and 6.16 nm, and the time-bandwidth product of 0.315 and 0.329 using graphene-PVA film and atomic layer graphene as SA were achieved, respectively, in mode-locked Er-doped fiber ring laser. The graphene-PVA SA suffered from larger loss caused by graphene flake aggregating, while the atomic layer graphene had smaller nonsaturable loss which exhibited lower mode locking threshold power. Atomic layer graphene also had stable fabricated process and controllable modulation depth depended on its layer numbers. To compare the mode locking performance of single wall carbon nanotubes (SWCNTs) and graphene SA, the same solution blending fabricated sample was used. Under similar nonsaturable loss and modulation depth, the SWCNTs SA with optimized concentration of 0.5wt% and thickness of 188£gm had shortest pulsewidth of 440 fs and 3-dB spectral linewidth of 6 nm. The shortest pulsewidth of 403 fs and broad spectral linewidth of 6.32 nm was obtained using graphene SA with concentration of 6.25wt% and thickness of 18£gm. Graphene has broad band absorbance and larger modulation depth, the experimental result indicates that graphene SA can generate shorter pulse and has chance to become the potential candidate of SA.

The dependence of single-wall carbon nanotubes-based saturable absorber (SWCNTs SA) on concentration and thickness for mode-locked laser pulse formation is comprehensively investigated. The peak absorption wavelength of SWCNTs SA is engineered within the gain band-width of erbium-doped fiber centered near 1550 nm. The optima full-width half-maximum (FWHM) of pulses was obtained as the concentrations of SWCNTs SA was 0.05 wt%. This indicates that the laser pulse become shorter as the concentration of SWCNTs SA increases. The result also showed that the FWHM of pulses from 3.43 to 1.85 ps were found as the thickness of SWCNTs SA increased from 8 to 100 um. This also indicates that the laser pulse become shorter as the thickness of SWCNTs SA increases. However, the pulse width significantly broadened as concentration increased to 0.1 wt% and became stable as thickness of SWCNTs SA increased from 100 to 264 um for passively mode-locked lasers. An in-depth study on the optimum fabrication of concentration and thickness of SWCNTs SA for laser pulse formation may allow developing a cost-effective mode-locked laser with high performance as well as broadly benefit to the utilization of many other low-cost nanodevices.

Neste trabalho investigamos o comportamento da técnica de varredura z no caso onde a fase do campo elétrico se afasta do perfil Gaussiano devido a saturação da não-linearidade óptica. A teoria usual da varredura z, baseada no método da decomposição Gaussiana, não pode descrever os resultados obtidos com os bem caracterizados absorvedores saturáveis com tempos lentos de resposta (milisegundos): Al2O3:Cr3+ (rubí), Beal2O4:Cr3+ (alexandrita) e GdAlO3: Cr3+ (aluminato de gadolínio dopado com cromo). Este objetivo pode ser alcançado por meio de uma teoria baseada na transformada de Hankel do campo elétrico que se propaga através da amostra e pela inclusão da saturação da fase nesta teoria. O formalismo alternativo também permite a inclusão de outros efeitos como por exemplo, térmico. Como no caso do meio Kerr, o índice de refração não-linear pode ser obtido da medida da diferença entre o pico e o vale da transmitância, na determinação da refração não-linear, ou da transmitância de pico, na determinação da absorção não-linear. Em relação a parte experimental, é introduzida uma técnica de varredura z com um único feixe resolvida no tempo para caracterizar, com radiação cw, a refração não-linear dos materiais citados. Devido a eliminação dos efeitos lineares parasíticos, a técnica é capaz de medir distorções de frente de onda tão pequenas quanto N104. A demonstração experimental da técnica alternativa é realizada com um laser de Ar+ com baixa potência e um laser de He-Ne / In this work we investigated the behavior of the Z-scan technique in the case where the phase of the electric field departs from Gaussian due to the saturation of the optical nonlinearity. The usual theory of Z-scan, based on Gaussian decomposition method, cannot describe experimental results obtained with well-characterized chromium-doped saturable absorbers of slow (milisecond) response: Al2O3:Cr3+ (ruby), Beal2O4:Cr3+ (alexandrite) e GdAlO3: Cr3+ (chromium doped gadolinium aluminate). This aim can be accomplished by means of a theory based on the Hankel transform of the electric field passing through the sample and the inclusion of the phase saturation. The alternative formalism also allows the inclusion of thermal effects. As in the case of Kerr media, the nonlinear refractive index can be obtained from the measurement of the transmittance difference between peak and valley, in the refractive case, or of the transmittance peak, in the absorptive case. Concerning to experimental part, a single-beam time-resolved Z-scan is introduced to characterize the nonlinear refraction of the above materials. Owing to the elimination of parasitic linear effects, the technique is able to measure induced wave front as small as N104. We demonstrate this method on several materials using low power Ar+ and He-Ne lasers

This thesis utilized pulse shaping technology to study chirp response of SSBR and attempt to analyze contribution of SSBR in mode-locked process. A home-made pulse shaping system (based on 4f scheme) with Freezing algorithm and Gerchberg-Saton algorithm was demonstrated. A normal dispersion at nonabsorbable wavelength and an anomalous dispersion around absorbable wavelength region in SSBR were obtained. Meanwhile, a Kramers-Kronig relation like behavior of pulse depression/broadening ratio in the strained multiple quantum well was observed and also refer to that pulse starting force is stronger at short wavelength. Decrease of pulse compression with increasing power of negative chirp incident pulse was characterized. Unclear power dependence for positive chirp case was also performed. These could be due to competition of band-filling and pump dump process. In addition, higher reflectivity and tendency of lower saturation fluence of SSBR for negative chirp incident pulse were observed.

No description available.

In this diploma work, two versions of the discrete nonlinear Schrödinger (DNLS) equation are used to model a nonlinear layered photonic crystal system; the cubic DNLS (cDNLS) equation and the saturable DNLS (sDNLS) equation. They both have site-dependent coefficients to break mirror symmetry with respect to propagation direction, as well as to describe the linear and nonlinear properties of the system. Analytical solutions taking on plane wave form are, via the backward transfer map, used to derive a transmission coefficient as well as a rectifying factor to quantify the diode effect. The effect of varying site-dependent coefficients is studied in detail. Numerical simulations of Gaussian wave packets impinging on the system, using open boundary conditions, show the breaking of parity symmetry. Evidence of a change in the wave packet dynamics occurring in the transition between the cubic and the saturable DNLS model is presented. A saturated system prevents the wave packet from getting stuck in the nonlinear lattice layers. The transmission properties were found to be very sensitive to slight changes of the system parameters.

Neste trabalho investigamos o comportamento da técnica de varredura z no caso onde a fase do campo elétrico se afasta do perfil Gaussiano devido a saturação da não-linearidade óptica. A teoria usual da varredura z, baseada no método da decomposição Gaussiana, não pode descrever os resultados obtidos com os bem caracterizados absorvedores saturáveis com tempos lentos de resposta (milisegundos): Al2O3:Cr3+ (rubí), Beal2O4:Cr3+ (alexandrita) e GdAlO3: Cr3+ (aluminato de gadolínio dopado com cromo). Este objetivo pode ser alcançado por meio de uma teoria baseada na transformada de Hankel do campo elétrico que se propaga através da amostra e pela inclusão da saturação da fase nesta teoria. O formalismo alternativo também permite a inclusão de outros efeitos como por exemplo, térmico. Como no caso do meio Kerr, o índice de refração não-linear pode ser obtido da medida da diferença entre o pico e o vale da transmitância, na determinação da refração não-linear, ou da transmitância de pico, na determinação da absorção não-linear. Em relação a parte experimental, é introduzida uma técnica de varredura z com um único feixe resolvida no tempo para caracterizar, com radiação cw, a refração não-linear dos materiais citados. Devido a eliminação dos efeitos lineares parasíticos, a técnica é capaz de medir distorções de frente de onda tão pequenas quanto N104. A demonstração experimental da técnica alternativa é realizada com um laser de Ar+ com baixa potência e um laser de He-Ne / In this work we investigated the behavior of the Z-scan technique in the case where the phase of the electric field departs from Gaussian due to the saturation of the optical nonlinearity. The usual theory of Z-scan, based on Gaussian decomposition method, cannot describe experimental results obtained with well-characterized chromium-doped saturable absorbers of slow (milisecond) response: Al2O3:Cr3+ (ruby), Beal2O4:Cr3+ (alexandrite) e GdAlO3: Cr3+ (chromium doped gadolinium aluminate). This aim can be accomplished by means of a theory based on the Hankel transform of the electric field passing through the sample and the inclusion of the phase saturation. The alternative formalism also allows the inclusion of thermal effects. As in the case of Kerr media, the nonlinear refractive index can be obtained from the measurement of the transmittance difference between peak and valley, in the refractive case, or of the transmittance peak, in the absorptive case. Concerning to experimental part, a single-beam time-resolved Z-scan is introduced to characterize the nonlinear refraction of the above materials. Owing to the elimination of parasitic linear effects, the technique is able to measure induced wave front as small as N104. We demonstrate this method on several materials using low power Ar+ and He-Ne lasers

Excitabilité et structures localisées sont des phénomènes universels qui ont été observés dans une grande variété de systèmes. Chacun des deux phénomènes a des propriétés intéressante pour des applications potentielles, surtout dans l'optique. L'excitabilité est la propriété intrinsèque du neurone, elle décrit sa réponse à une stimulation: pour des stimulations en-dessous d'un certain seuil, le neurone reste dans son état de repos mais quand la stimulation dépasse ce seuil, il émet une impulsion dont la taille ne dépend pas de la force de la stimulation. Les structures localisées dans les systèmes optiques sont des pics de surintensité qui coexistent avec un fond homogène sur la section transversale spatialement étendue d'une cavité laser. Dans cette thèse nous avons étudié l'apparition de ces deux phénomènes non-linéaires dans des microcavités à semi-conducteur, pour lesquelles les applications dans le traitement tout-optique de l'information sont prometteuse. En outre, nous avons étudié la possibilité de trouver un nouveau phénomène à l'intersection entre les deux: les structures localisées excitables. D'une part nous avons étudié les propriétés des structures localisées qui se forment dans un laser à solitons. Celui-ci est constitué par deux laser à semiconducteur à cavité verticale (VCSEL) mutuellement couplées dans une configuration de laser avec absorbant saturable (LSA). Nous observons l'émissions aléatoire et localisée d'impulsions que nous affirmons être la première évidence expérimentale de structures localisées excitables. D'autre part nous avons démontré le comportement excitable d'un laser avec signal injecté par la possibilité de contrôler les impulsions excitable grâce à une perturbation externe appropriée. Nous avons également réalisé des simulations numériques qui montrent l'existence des structures localisées excitables dans un modèle de VCSEL avec absorbant saturable. / Excitability and localized structures are universal phenomena, observed in various systems. Both possess interesting properties for potential applications, especially in optics. Excitability is the intrinsic property of the neuron defining its response to an external stimulus: for a sub-threshold stimulus the neuron stays quiescent; for a super-threshold stimulus, it emits a well-calibrated pulse independent on the strength of the stimulus. Localized structures in optics are bright intensity peaks coexisting with a homogeneous low intensity background. They appear in the transverse section of spatially-extended laser resonators. We study the occurrence of these nonlinear phenomena in semiconductor microcavities since the applications in all-optical processing of information are promising. Moreover we investigate the possibility of a novel kind of localized structure which stands at the intersection of these two phenomena: the excitable localized structures. On the one hand we study the properties of localized structures arising from a cavity soliton laser composed of two mutually coupled broad-area VCSELs in a LSA (Laser with Saturable Absorber) configuration . We report on the observation of a random and localized emission of pulses which we claim to be the first experimental evidence of noise-triggered excitable localized structures whose excitability is induced by inhomogeneities and drift. On the other hand we demonstrate the excitability in an optically injected laser by showing the control of excitable pulses by means of an external perturbation. We also perform numerical simulations which reveal the existence of excitable localized structures in a model of broad area VCSEL with saturable absorber.

Dans cette thèse, nous avons développé et étudié des miroirs absorbants saturables ultra-rapides, pour des applications au traitement de signaux optiques à très haut débit et la génération d’impulsions laser ultra-courtes à 1.55 µm. Dans une première partie, nous avons développé un miroir absorbant saturable ultra-rapide basé sur le semi-conducteur In₀.₅₃Ga₀.₄₇As soumis à une implantation ionique à température élevée de 300 °C. Des ions Fe ont été utilisés car il a été démontré que les niveaux Fe²⁺/Fe³⁺ peuvent agir comme des centres de recombinaison efficaces pour les électrons et les trous dans In₀.₅₃Ga₀.₄₇As. Nous avons étudié la durée de vie des porteurs en fonction de la dose ionique, la température et le temps de recuit. A part la durée de vie rapide, les caractéristiques de réflectivité non-linéaire, telles que l’absorption linéaire, la profondeur de modulation, les pertes non saturables ont été étudiées dans différentes conditions de recuit. Après un recuit à 600 °C pendant 15 s, un échantillon présentant une grande amplitude de modulation de 53,9 % et une durée de vie de porteurs de 2 ps a été obtenu. Dans une seconde partie, la gravure par faisceau d’ions focalisés (FIB) a été utilisée pour fabriquer une structure en biseau ultrafin sur de l’InP cristallin, pour réaliser un dispositif photonique multi-longueur d’onde à cavité verticale. Les procédures de balayage FIB et les paramètres appropriés ont été utilisés pour contrôler le re-dépôt du matériau cible et pour minimiser la rugosité de surface de la zone gravée. Le rendement de pulvérisation de la cible en InP cristallin a été déterminé en étudiant la relation entre la profondeur de gravure et la dose ionique. En appliquant les conditions de rendement optimales, nous avons obtenu une structure en biseau ultrafin dont la profondeur de gravure est précisément ajustée de 25 nm à 55 nm, avec une pente horizontale de 1:13000. La caractérisation optique de ce dispositif en biseau a confirmé le comportement multi-longueur d’onde de notre dispositif et montré que les pertes optiques induites par le procédé de gravure FIB sont négligeables. Dans une troisième partie, nous avons démontré que la réponse optique non-linéaire du graphène est augmentée de manière résonnante quand une monocouche de graphène est incluse dans une microcavité verticale comportant un miroir supérieur. Une couche mince de Si₃N₄ a été déposée selon un procédé de dépôt par PECVD spécialement développé pour agir comme couche de protection préalable avant le dépôt du miroir supérieur proprement dit, permettant ainsi de préserver les propriétés optiques du graphène. En incluant une monocouche de graphène dans une microcavité appropriée, une profondeur de modulation de 14,9 % a été obtenue pour une fluence incidente de 108 µJ/cm². Cette profondeur de modulation est beaucoup plus élevée que la valeur maximale de 2 % obtenue dans les travaux antérieurs. De plus un temps de recouvrement aussi bref que 0,7 ps a été obtenu. / In this thesis, we focus on the development of ultrafast saturable absorber mirrors for applications to ultra-high speed optical signal processing and ultrashort laser pulse generation at 1.55 μm. In the first part, we have developed an ultrafast In₀.₅₃Ga₀.₄₇As -based semiconductor saturable absorber mirror by heavy ion implantation at the elevated temperature of 300 ºC. Fe ion has been employed as the implant since it has been shown that Fe²⁺/Fe³⁺ level can act as efficient recombination centers for electrons and holes in In₀.₅₃Ga₀.₄₇As. We studied the carrier lifetime of Fe-implanted sample as a function of ion dose, temperature and annealing time. Apart from the fast carrier lifetime, the characteristics of nonlinear reflectivity for the Fe-implanted sample, such as linear absorption, modulation depth, nonsaturable loss, have are also been investigated under different annealing temperature. Under annealing at 600 ºC for 15 s, the Fe-implanted sample with a big modulation depth of 53.9 % and a fast carrier lifetime of 2 ps has been achieved. In the second part, focused ion beam milling has been applied to fabricate an ultra-thin taper structure on crystalline indium phosphide to realize a multi-wavelength vertical cavity photonic device. The appropriate FIB scanning procedures and operating parameters were used to control the target material re-deposition and to minimize the surface roughness of the milled area. The sputtering yield of crystalline indium phosphide target was determined by investigating the relationship between milling depth and ion dose. By applying the optimal experimentally obtained yield and related dose range, we have fabricated an ultra-thin taper structure whose etch depths are precisely and progressively tapered from 25 nm to 55 nm, with a horizontal slope of about 1:13000. The optical characterization of this tapered device confirms the expected multi-wavelength behavior of our device and shows that the optical losses induced by the FIB milling process are negligible. In the third part, we demonstrate that the nonlinear optical response of graphene is resonantly enhanced by incorporating monolayer graphene into a vertical microcavity with a top mirror. A thin Si₃N₄ layer was deposited by a developed PECVD process to act as a protective layer before subsequent top mirror deposition, which allowed preserving the optical properties of graphene. Combining monolayer graphene with a microcavity, a modulation depth of 14.9 % was achieved at an input energy fluence of 108 µJ/cm². This modulation depth is much higher than the value of about 2 % in other works. At the same time, an ultrafast recovery time of 0.7 ps is retained.

Les lasers ultra-rapides fibrés sont aujourd’hui incontournables dans de nombreuses applications industrielles et scientifiques du fait de leur stabilité, de leur compacité et des hautes puissances disponibles. Les performances actuelles, rendues accessibles par le développement de fibres à larges aires modales et le concept d’amplification à dérive de fréquence, sont toutefois complexes à mettre oeuvre et limitées par l’utilisation de composants massifs pour les étapes de compression et d’étirement des impulsions. Ces travaux de thèse, à la fois expérimentaux et numériques, avaient pour objectif d’explorer des régimes dynamiques originaux basés sur l’utilisation de fibres actives spécifiques combinant large aire modale et propriétés dispersives adéquates pour la génération d’impulsions ultra-courtes de haute énergie. Les études numériques ont ainsi permis de montrer que des régimes impulsionnels à haute dispersion normale pouvaient être atteints en exploitant les phénomènes de résonnance et de couplage de modes dans des fibres de Bragg ou à profil en W. L’étude de l’influence des paramètres de la cavité laser sur le mécanisme de verrouillage de modes a permis d’identifier des configurations attractives pour la montée en puissance. La mise en oeuvre expérimentale de ces concepts a notamment permis le développement d’une source laser à soliton dissipatif produisant des impulsions énergétiques (38 nJ, 700 fs après compression) à des longueurs d’ondes autour de 1560 nm, record pour ce type d’oscillateur. La réalisation expérimentale de sources ultra-rapides basées sur des fibres actives spécifiques combinées au phénomène de couplage de mode ont permis d’identifier les potentialités et limitations de ces architectures originales à fortes dispersions totales pour la montée en énergie. / Ultrafast fiber lasers represent today a ubiquitous technology in various industrial and research applications thanks to their inherent advantages such as compactness, stability and high power. The best performances to date, mostly relying on large mode area fibers and chirped pulse amplification, however require complex experimental developments and are limited by the use of bulk components for pulse stretching and compression. The experimental and numerical work presented in this PhD thesis aimed at exploring original dynamical regimes based on specific active fibers combining large mode area and high dispersions for the generation of high-energy ultra-short pulses. The numerical studies then showed that pulsed regimes with high normal dispersions could be reached by exploiting resonance and mode-coupling phenomena in Bragg or W-type fibers. Studying the influence of the cavity parameters on mode-locking mechanisms allowed to target attractive configurations for energy scaling. The experimental implementation of this concept allowed the development of a dissipative soliton source delivering record high-energy chirped pulses (38 nJ, 700 fs after compression) at 1560 nm. The realization of ultrafast sources based on specific active fibers combined to mode-coupling phenomena then brought the possibility to identify the potentiality and limitations of these particular architectures with high dispersions for energy scaling.