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Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. Si1-xGex ρMOSFETs with an Al2O3/HfAlOx/Al2O3nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si1-xGexρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si1-xGexρMOSFETs. Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si1-xGexincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si1-xGex/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi2-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi1-xGex is found to form on selectively grown p-typeSi1-xGexused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi1-xGex/p-type Si1-xGexcontacts is 5´10-8Ωcm2, which satisfies the requirement for the 45-nmtechnology node in 2010. When the Si1-xGexchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi1-xGexretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled. Key Words:MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.

<p>Challenges with integrating high-κ gate dielectric,retrograde Si_1-xGe_xchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si_1-xGex surface-channel and different high-κgate dielectric are examined. Si_1-xGex ρMOSFETs with an Al₂O₃/HfAlO_x/Al₂O₃nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si_1-xGe_xρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si_1-xGe_xρMOSFETs.</p><p>Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si_1-xGe_xincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si_1-xGe_x/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi₂-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi_1-xGex is found to form on selectively grown p-typeSi_1-xGe_xused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi_1-xGe_x/p-type Si_1-xGe_xcontacts is 5´10^-8Ωcm², which satisfies the requirement for the 45-nmtechnology node in 2010.</p><p>When the Si_1-xGe_xchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi_1-xGe_xretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled.</p><p><b>Key Words:</b>MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.</p>

近年全球暖化現象日益嚴重，格陵蘭等極區融冰所造成之海平面上升將對全球人類帶來嚴重威脅。因冰層質量之改變與冰河移動速度高度相關，故可藉由監測格陵蘭冰層（Greenland Ice Sheet，GrIS）上冰河之移動推估全球暖化對其造成之影響。衛星影像因具有連續且快速獲得大範圍地表資訊之能力，且可結合各影像處理技術獲得地表變形量，故已廣泛應用於廣域冰河之監測。然不同影像與技術均有其優勢與限制，故本研究將使用合成孔徑雷達（Synthetic Aperture Radar，SAR）與光學影像，並結合合成孔徑雷達差分干涉（Differential Interferometric SAR，D-InSAR）、多重合成孔徑雷達干涉（Multi-aperture Interferometric SAR，MAI）與偏移偵測法（Pixel-offset，PO）技術獲得冰河表面於不同方向之位移向量，再整合各向量透過三維變動量解構法（3D decomposition）求解表面於三維方向之變形量。據此執行數值冰層動力模型（Numerical Ice Sheet Model，ISM），並結合模擬之冰底基岩渠道網絡、數化之冰面冰隙與冰面湖及氣象觀測資料後，參佐冰河變動理論，進一步了解格陵蘭Russell冰河之變動行為與機制。 / Global warming has been a worldwide issue and significantly increasing icecap melting rate over polar area. Consequently the sea level rises continuously and poses a fundamental threat to whole human beings. Since the mass loss of Greenland ice sheet （GrIS） is highly correlated to the velocity of glacier movement, this study aims to monitor the impact of global warming by tracking glacier terminus displacement over GrIS using remote sensing techniques. As there are multiple spaceborne images of various characteristics and also multiple techniques with different functions, we proposed a monitoring strategy using Synthetic Aperture Radar （SAR） and optical images, with Differential Interferometric SAR （D-InSAR）, Multi-aperture Interferometric SAR （MAI） and Pixel-offset （PO） techniques to estimate glacier movement vectors. The vectors were then merged using 3D decomposition method to derive 3D deformation. Based on the resultant 3D deformation, the Numerical Ice Sheet Model （ISM） is conducted and then integrates with modeled subglacial drainage channel network and glaciological theories, the melting dynamics and mechanism of Russell glacier can be further understood.

Mechanical pulps are used in paper products such as magazine or news grade printing papers or paperboard. Mechanical pulping gives a high yield; nearly everything in the tree except the bark is used in the paper. This means that mechanical pulping consumes much less wood than chemical pulping, especially to produce a unit area of printing surface. A drawback of mechanical pulp production is the high amounts of electrical energy needed to separate and refine the fibers to a given fiber quality. Mechanical pulps are often produced from slow growing spruce trees of forests in the northern hemisphere resulting in long, slender fibers that are well suited for mechanical pulp products. These fibers have large varieties in geometry, mainly wall thickness and width, depending on seasonal variations and growth conditions. Earlywood fibers typically have thin walls and latewood fibers thick. The background to this study was that a more detailed fiber characterization involving evaluations of distributions of fiber characteristics, may give improved possibilities to optimize the mechanical pulping process and thereby reduce the total electric energy needed to reach a given quality of the pulp and final product. This would result in improved competitiveness as well as less environmental impact. This study evaluated the relation between fiber characteristics in three types of mechanical pulps made from Norway spruce (Picea abies), thermomechanical pulp(TMP), stone groundwood pulp (SGW) and chemithermomechanical pulp (CTMP). In addition, the influence of fibers from these pulp types on sheet characteristics, mainly tensile index, was studied. A comparatively rapid method was presented on how to evaluate the propensity of each fiber to form sheets of high tensile index, by the use of raw data from a commercially available fiber analyzer (FiberLabTM). The developed method gives novel opportunities of evaluating the effect on the fibers of each stage in the mechanical pulping process and has a potential to be applied also on‐line to steer the refining and pulping process by the characteristics of the final pulp and the quality of the final paper. The long fiber fraction is important for the properties of the whole pulp. It was found that fiber wall thickness and external fibrillation were the fibercharacteristics that contributed the most to tensile index of the long fiber fractions in five mechanical pulps (three TMPs, one SGW, one CTMP). The tensile index of handsheets of the long fiber fractions could be predicted by linear regressions using a combination of fiber wall thickness and degree of external fibrillation. The predicted tensile index was denoted BIN, short for Bonding ability INfluence. This resulted in the same linear correlation between BIN and tensile index for 52 samples of the five mechanical pulps studied, each fractionated into five streams(plus feed) in full size hydrocyclones. The Bauer McNett P16/R30 (passed 16 meshwire, retained on a 30 mesh wire) and P30/R50 fractions of each stream were used for the evaluation. The fibers of the SGW had thicker walls and a higher degree of external fibrillation than the TMPs and CTMP, which resulted in a correlation between BIN and tensile index on a different level for the P30/R50 fraction of SGW than the other pulp samples. A BIN model based on averages weighted by each fiber´s wall volume instead of arithmetic averages, took the fiber wall thickness of the SGW into account, and gave one uniform correlation between BIN and tensile index for all pulp samples (12 samples for constructing the model, 46 for validatingit). If the BIN model is used for predicting averages of the tensile index of a sheet, a model based on wall volume weighted data is recommended. To be able to produce BIN distributions where the influence of the length or wall volume of each fiber is taken into account, the BIN model is currently based on arithmetic averages of fiber wall thickness and fibrillation. Fiber width used as a single factor reduced the accuracy of the BIN model. Wall volume weighted averages of fiber width also resulted in a completely changed ranking of the five hydrocyclone streams compared to arithmetic, for two of thefive pulps. This was not seen when fiber width was combined with fiber wallthickness into the factor “collapse resistance index”. In order to avoid too high influence of fiber wall thickness and until the influence of fiber width on BIN and the measurement of fiber width is further evaluated, it is recommended to use length weighted or arithmetic distributions of BIN and other fiber characteristics. A comparably fast method to evaluate the distribution of fiber wall thickness and degree of external fibrillation with high resolution showed that the fiber wallthickness of the latewood fibers was reduced by increasing the refining energy in adouble disc refiner operated at four levels of specific energy input in a commercial TMP production line. This was expected but could not be seen by the use of average values, it was concluded that fiber characteristics in many cases should be evaluated as distributions and not only as averages. BIN distributions of various types of mechanical pulps from Norway spruce showed results that were expected based on knowledge of the particular pulps and processes. Measurements of mixtures of a news‐ and a SC (super calendered) gradeTMP, showed a gradual increase in high‐BIN fibers with higher amounts of SCgrade TMP. The BIN distributions also revealed differences between the pulps that were not seen from average fiber values, for example that the shape of the BINdistributions was similar for two pulps that originated from conical disc refiners, a news grade TMP and the board grade CTMP, although the distributions were on different BIN levels. The SC grade TMP and the SC grade SGW had similar levels of tensile index, but the SGW contained some fibers of very low BIN values which may influence the characteristics of the final paper, for example strength, surface and structure. This shows that the BIN model has the potential of being applied on either the whole or parts of a papermaking process based on mechanical or chemimechanical pulping; the evaluation of distributions of fiber characteristics can contribute to increased knowledge about the process and opportunities to optimize it.

In my thesis, I focus on the task of recognizing human iris from an image.In the beginning, the work deals with a question of biometrics, its importance and basic concepts, which are necessary for use in following text. Subsequently process of human Iris detection is described together with theory of evolution algorithms. In the implementation part, is described the design of implemented solution, which uses evolution algorithms, where is emphasis on correct pupil and iris boundary detection.