京都大学 / 新制・課程博士 / 博士(情報学) / 甲第24747号 / 情博第835号 / 新制||情||140(附属図書館) / 京都大学大学院情報学研究科通信情報システム専攻 / (主査)教授 佐藤 高史, 教授 橋本 昌宜, 教授 新津 葵一 / 学位規則第4条第1項該当 / Doctor of Informatics / Kyoto University / DFAM

Part A of two Project Reports; Part B can be found at: http://hdl.handle.net/11375/17691 / <p>The annealing behaviour of 15N implanted, aluminum doped-SiC has been studied by measuring the differential capacitance as a function of applied bias. The samples were doubly implanted at 450°c with 45 Kev and 25 Kev ions, for a dose of 10^16/cm^2 at each energy.</p> <p> An n-i-p structure with a thick insulator region was found after annealing at 1000°c. The thickness of this i region could be substantially reduced with additional annealing at higher temperatures, and a fairly good n-p junction was obtained after 1480°c anneal.</p> <p> About 20-30% of the implanted nitrogen ions were found to be electrically active.</p> <p> The C-V behaviour was found to have large variations with the a.c. measuring frequency.</p> / Thesis / Master of Engineering (MEngr)

Intermetallic composites of molybdenum disilicide reinforced with various amounts of silicon carbide particulate were produced by combustion synthesis from their elemental powders. Elemental powders were mixed stoichiometrically then ball-milled. The coldpressed mixture was then chemically ignited at one end under vacuum at approximately 700°C. The combustion temperature of the process was approximately 1600°C which was lower than the melting point of molybdenum disilicide. This processing technique allowed the fabrication of the composites at 700°C within a few seconds, instead of sintering at temperatures greater than 1200°C for many hours. The end product was a porous composite, which was densified to >97% ofthe theoretical density by hot pressing. The grains ofthe matrix were 8-14 μm in size surrounded by SiC reinforcement of 1-5 μm. The morphology and structure of the products were studied by x-ray diffraction and scanning electron microscopy (SEM). Samples were prepared for hardness, fracture strength, and toughness testing at room temperature. There were improvements in the mechanical properties of the composites with increasing SiC reinforcement. The hardness of the materials increased from 10.1 ± 0.1 GPa (959 ± 13 kg/mm2) to 11.7 ± 0.6 GPa (1102 ± 52 kg/mm2) to 12.7 ± 0.4 GPa (1199 ± 36 kg/mm2) with the 10 vol% and 20 vol% SiC reinforcement, respectively. The strength increased from 195±39 MPa to 237±39 MPa with 10 vol% and to 299 ± 43.2 MPa with a 20 vol% SiC reinforcement. The fracture toughness increased from 2.79 ± 0.36 MPa.m1/2 to 3.31± 0.41 MPa.m1/2 with 10 vol% SiC and to 4.08± 0.30 MPa.m1/2 with 20 vol% SiC. The increase in hardness and flexural strength is due to the effective load transfer across the strong interface in the composites. The main toughening mechanism is crack deflection by the residual stress in the materials, induced by the differences in the thermal expansion coefficients and the elastic moduli ofthe matrix and reinforcement. / Thesis / Master of Engineering (ME)

The wide band-gap semiconductor silicon carbide has tremendous potential for use in high power, high temperature, and high frequency electronic devices. One of the more important design factors for these devices is the epitaxial layer. It is desirable that this thin film have uniform polytype, thickness, and impurity concentration, as well as be defect free. One method used for SiC to ensure epitaxial layers with homogenous polytype is to cut wafers from a boule that has been tilted towards a specific crystallographic face at a fixed angle (known as ?off cut?). The purpose of this thesis was to investigate the growth mechanisms of alternative boule tilting directions with 6H-SiC. Four alternative crystallographic tilting faces were chosen: <1230>, <1340>, <2130>, and <3140>. A lightly doped 1um-thick layer was grown on samples representing the four alternative off-cut directions and, as references, commercially available substrates off cut towards the traditional direction <1120>. The physical and electrical properties of the layers were characterized by means of optical microscopy, Fourier Transform Infrared Reflectance Spectroscopy, Atomic Force Microscopy, capacitance vs. voltage, and current vs. voltage. Three facts were observed: 1) the alternative off-cut directions affected the growth mechanisms and surface morphology, 2) the quality of the substrate affects the morphology of the epitaxy layer, and 3) the relative differences between the surface roughness attributed to the different off-cut directions affected the observed electrical characteristics of Schottky barrier diodes fabricated on the epi layers. The samples cut towards the <31-40> and <13-40> directions showed to the most promising alternative off-axis tilting direction.

High-voltage SiC Schottky barrier diodes have been fabricated with 1mm square contacts. The SBD?s were fabricated using both an argon implant and a field plate overlap for edge termination. The current-voltage characterization of the diodes is presented with statistical yield information on the first set of diodes produced from the Mississippi Center for Advanced Semiconductor Prototyping. After packaging, reverse bias breakdown voltages over 500V at 0.1 A/cm2 and an on-state forward voltage drop of less than 2.5V at 100 A/cm2 were demonstrated. A 0.65-0.85 eV barrier height was extracted from the SBD?s using I-V measurements. Field plate terminated devices demonstrated consistent, low standard deviation breakdown voltages and low leakage currents. The argon implanted devices demonstrated a higher breakdown voltage with higher leakage currents and a higher standard deviation. It was proven that the diodes followed the thermionic field emission model for up to one third of the breakdown voltage. Over 15,000 diodes have been tested and results analyzed in this work.

Demand for capable and reliable semiconductor and fabrication technology for high temperature and power electronics applications has been increasing in recent years. Silicon Carbide (SiC), as a wide bandgap compound semiconductor, demonstrates superior characteristics such as high thermal conductivity, high breakdown voltage, and long-lasting reliable operation at elevated temperature. SiC-based circuits and systems are capable to offer significant performance enhancements to various applications. Integrated power management units and conversion modules in HEVs, integrated sensors for aircraft engines, development of small-sized portable power generators are among many applications that require reliable circuits with long-lasting functional lifetime. Nevertheless, there are numerous challenges associated with the design and fabrication of SiC-based circuits. The aim of this research is to practically design and implement novel operational amplifiers (opamps) based on Vertical Channel 4H-SiC JFET (SiC JFET) that can be utilized as sub-circuits of integrated SiC JFET-based circuits and systems. Recently, SiC power JFET-based power management units were developed that deploy non-SiC JFET-based circuits for analog signal processing, driving, and control, because all SiC JFET-based circuits were not available for full integration. However, utilizing SiC JFET for analog design (in order to close the mentioned gap) exhibits significant design challenges, even at room temperature. These fundamental challenges are low intrinsic gain, the requirement to limit the gate to source voltage range, and restrictions on utilizing channel length as a design parameter due to fabrication complexity. These challenges must be successfully overcome at room temperature, before moving towards high temperature SiC JFET-based analog design. The main objective of this dissertation is to establish a design base, overcome the challenges, demonstrate the feasibility, and present all SiC JFET-based opamps that are designed for gain, CMRR, and overall performance. Before attempting to design, both Enhancement and Depletion Mode SiC JFETs are characterized, analyzed, and modeled for simulation. Unique and reliable opamp configurations are presented that take design requirements into account, use threshold voltage instead of channel length as a design parameter, and employ gain enhancement techniques while obtaining maximum possible bandwidth. The final opamps are fabricated and tested and the results show that the objective is accomplished.

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Cette étude, réalisée dans le cadre du groupement scientifique français comportement thermomécanique des composites céramique/céramique, a pour objectifs la caractérisation expérimentale et la modélisation du comportement mécanique, à température ambiante, en traction uniaxiale, de composites SiC/SiC élaborés par la SEP. Nous avons adopté une approche multi-échelle : différents matériaux ont successivement été considérés. Les torons : composites unidirectionnels constitués d'environ 500 fibres de SiC Nicalon imprégnées, par infiltration chimique en phase vapeur (CVI), par la matrice SiC. Les composites monocouches : nappés de torons de fibres de SiC tissés, imprégnées par la matrice SiC selon le même procédé de CVI. Les matériaux multicouches : superpositions de strates de torons de fibres tissées, infiltrées par la matrice SiC. La modélisation numérique par éléments finis proposée est fondée sur une description statistique du comportement des torons. Ces derniers sont en effet caractérisés par une dispersion importante de leurs caractéristiques mécaniques (seuils d'endommagement et de rupture). Ce phénomène non négligeable a donc été introduit dans la modélisation. Par ailleurs, l'observation en microscopie (optique, électronique à balayage) des différents matériaux, a permis de mettre en évidence les phénomènes physiques supplémentaires se produisant à chaque échelle (fissuration matricielle, délaminage). La prise en compte de ces paramètres dans les simulations a fourni une description correcte du comportement mécanique et de la dispersion des caractéristiques mécaniques des différents matériaux : des comparaisons calcul/expérience sont réalisées à chaque échelle.