In this thesis we investigate complete systems of MUBs and SIC-POVMs. These are highly symmetric sets of vectors in Hilbert space, interesting because of their applications in quantum tomography, quantum cryptography and other areas. It is known that these objects form complex projective 2-designs, that is, they satisfy Welch bounds for k = 2 with equality. Using this fact, we derive a necessary and sufficient condition for a set of vectors to be a complete system of MUBs or a SIC-POVM. This condition uses the orthonormality of a specific set of vectors. Then we define homogeneous systems, as a special case of systems of vectors for which the condition takes an especially elegant form. We show how known results and some new results naturally follow from this construction.

In this thesis we investigate complete systems of MUBs and SIC-POVMs. These are highly symmetric sets of vectors in Hilbert space, interesting because of their applications in quantum tomography, quantum cryptography and other areas. It is known that these objects form complex projective 2-designs, that is, they satisfy Welch bounds for k = 2 with equality. Using this fact, we derive a necessary and sufficient condition for a set of vectors to be a complete system of MUBs or a SIC-POVM. This condition uses the orthonormality of a specific set of vectors. Then we define homogeneous systems, as a special case of systems of vectors for which the condition takes an especially elegant form. We show how known results and some new results naturally follow from this construction.

Graphene bilayers in Bernal stacking exhibit a transverse electric (E) field dependent band gap, thanks to the on-site electron energy asymmetry between the two layers, which can be used to increase the channel resistivity, and enable higher on/off ratio devices. Using dual-gated device structure, we investigate the transport characteristics of exfoliated graphene bilayers as a function of carrier density and E-field at temperature from 295 K down to 0.3 K. At high E-field, strong conduction suppression near the charge neutrality point is observed, a primary characteristic introduced by band gap opening. The conductivity suppression persists up to the finite threshold voltages, which increase with increasing the E-field, similar to a gapped semiconductor. We extract the transport gap as a function of E-field from the threshold measurement, and further discuss the impact of disorder. At gate bias higher than the threshold, conductivity increases linearly as carrier density increases, which contrasts to the sub-linear dependence in graphene monolayer. Mobility shows decreasing tendency with the increasing E-field, which changes little as temperature changes. Besides, we probe the electrical characteristics of quasi-free-standing graphene bilayers grown on SiC at temperature down to 0.3 K, based on the study on the exfoliated graphene bilayers. The epitaxial graphene bilayer on SiC is prepared by atmospheric pressure graphitization in Ar, followed by H₂ intercalation, which renders the material quasi-free-standing. At the charge neutrality point, the longitudinal resistance shows an insulating behavior, and follows a temperature dependence consistent with variable range hopping transport in a gapped state. Besides, clear linear dependence of the conductivity on the carrier density is observed, which is distinguishable from the sub-linear dependence in graphene monolayer. These properties show that the epitaxial graphene bilayer grown on the SiC exhibits band-gap opening and Bernal stacked arrangement. / text

Abstract Densification and mechanical properties (hardness, fracture toughness and flexural strength) of the SiC-TiB2 composite were studied. Pressureless sintering experiments were carried out on samples containing 0 to 50 vol % of TiB2 created by an in-situ reaction between TiO2 and C: 2TiO2 + B4C + 3C 2TiB2 + 4CO Al2O3 and Y2O3 were used as sintering additives to create a liquid phase and promote densification at sintering temperatures ranging from 1820 to 1940oC. The sintered samples were subsequently heat-treated at temperatures ranging from 1850 to 1970oC It was found that the presence of TiB2 formed by the above reaction serves as an effective obstacle to crack propagation thus increasing both the strength and fracture toughness of SiC while maintaining high a hardness of the sintered samples. Densities higher than 98 % TD were achieved depending on both the sintering temperature and heat treatment conditions. From a density viewpoint, the optimum volume fraction of TiB2 was from 12 to 24 vol %. Typical microstructures for samples with this volume fraction of TiB2 consist of TiB2 particles (< 5m) uniformly dispersed in a matrix of elongated SiC plates. The presence of TiB2 particles in the matrix of SiC inhibited exaggerated grain growth of the SiC grains and activated additional toughening mechanisms. The subsequent heat treatment of the sintered samples improved mechanical properties. The optimum sintering and heat treatment temperatures were 1940 and 1970oC, respectively. The maximum flexural strength of 593 MPa was obtained in sample with 12 vol % TiB2. A maximum fracture toughness of 6.6 MPa•m1/2 was measured in samples containing 24 vol % TiB2. While both fracture toughness and strength increased with the presence of TiB2 particles, hardness on the other hand decreased from ~18 GPa in samples without TiB2 to 16.4 and 15.9 GPa in samples with 12 and 24 vol % TiB2, respectively. A theoretical analysis was conducted to model the effect of microstructure on the fracture toughness of SiC-TiB2 composites and was experimentally verified. / Thesis (Ph.D, Mechanical and Materials Engineering) -- Queen's University, 2009-09-30 23:04:32.565

3D stacked ICs (3D-SICs) with multiple dies interconnected by through-silicon-vias(TSVs) are considered as a technology driver and proven to have overwhelming advantagesover traditional ICs with a single die in a package in terms of performance, powerconsumption and silicon overhead. However, these “super chips” bring new challengesto the process of IC manufacturing; among which, testing 3D-SICs is the major andmost complex issue to deal with. In traditional ICs, tests can usually be performedat two stages (test instances), namely: a wafer sort and a package test. Whereas for3D-SICs, tests can be performed after each stacking event where a new die is stackedover a partial stack. This expands the set of available test instances. A combination ofselected test instances where a test is performed (active test instance) is known as a testflow. Test time is a major contributor to the total test cost. Test time changes with theselected test flow. Therefore, choosing a cost effective test flow which will minimizesthe test time is absolutely essential.This thesis focuses on finding an optimal test flow which minimizes the test timefor a given 3D-SIC. A mathematical model has been developed to evaluate the test timeof any test flow. Then a heuristic has been proposed for finding a near optimal test flowwhich minimizes the test time. The performance of this approach in terms of computationtime and efficiency has been compared against the minimum test time obtainedby exhaustive search. The heuristic gives good results compared to exhaustive searchwith much lesser computation time.

Following two previous nuclear reactor accidents involving light water reactors, there is a renewed interest in accident tolerant fuels. These accident tolerant fuels should not oxidise in a steam atmosphere during loss of coolant accidents. One such accident tolerant fuel that has been suggested is the use of ceramic composite cladding material as a replacement for the current zircaloy cladding. The high temperature stability of silicon carbide, together with its high resistance to corrosion may make it preferable to zircaloy during accident conditions. Furthermore, if the neutron absorption cross section of the cladding is less than the current zircaloy, extended life might be available when compared with current fuels. One of the main difficulties in using ceramic cladding materials as nuclear fuels is the lack of a reliable joining process to manufacture end caps for the cladding tubes. A manufacturing method would need to be developed to produce ceramic joint that is able to withstand a PWR environment. Two methods of ceramic joining have been proposed. Firstly, silicon carbide deposition process that is used to infill the gap between two ceramic components and secondly a ceramic soldering technique. A silicon carbide deposition process has been developed. The deposit was confirmed to be 3C silicon carbide which has preferable irradiation response to the other polytypes. The deposit was found to be carbon rich which was largely removed through the use of a thermal treatment step. The deposit was used to coat metallic surfaces for increased hardness, reduced sliding wear and corrosion resistance. Silicon carbide joints were produced using an oxide powder frit of silicon dioxide, yttrium oxide and aluminium oxide. Tubular samples were joined, however they contained circumferential cracking resulting in a join that was not hermetically sealed. The thermal conductivity of each joint varied from sample to sample. X-ray computed tomography showed there were large inconsistencies in the volume of joined material present in each sample giving rise to the large variation in thermal conductivity.

Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matériau clé pour l’électronique de puissance. Les cristaux massifs ainsi que les couches épitaxiales actives sont aujourd’hui obtenus par des procédés en phase gazeuse, comme la croissance par sublimation (ou PVT) et le dépôt chimique en phase gazeuse (CVD), respectivement. Le procédé de croissance en solution à haute température est actuellement revisité en raison de sa capacité à atteindre des qualités cristallines exceptionnelles. Ce travail est une contribution au développement du procédé de croissance en solution à partir d’un germe (TSSG), avec comme objectif principal l’accès à des cristaux de 4H-SiC fortement dopés de type p. Le dopant p le plus utilisé est l’Aluminium. Différentes étapes élémentaires du procédé sont étudiées, avec pour chaque étape l’évaluation de l’effet de l’Al. Après un bref rappel historique sur le SiC, les données fondamentales du SiC sont introduites dans le chapitre 1 et discutées par rapport aux applications en électronique de puissance. Dans le chapitre 2, le réacteur de croissance est détaillé. Les trois principaux aspects techniques du procédé sont exposés : i) l’apport en carbone par dissolution à l’interface entre le creuset en graphite et le liquide, ii) le transport du carbone de la zone de dissolution à la zone de cristallisation, et iii) la cristallisation sur le germe. Ces trois aspects ont été étudiés et améliorés par l’ajout de métaux de transition (Fe ou Cr) au solvant de façon à augmenter la solubilité en carbone, en favorisant le transport du carbone par l’optimisation de la convection forcée (i.e. la rotation du cristal) et en stabilisant le front de croissance. Après optimisation, un cristal de 4H-SiC a pu être obtenu à une vitesse supérieure à 300 µm/hr et avec un élargissement du diamètre d’environ 41% par rapport au diamètre initial du germe. Le chapitre 3 porte sur l’étude de l’interaction entre le solvant et la surface du 4H-SiC à l’équilibre, sans croissance, en utilisant la méthode de la goutte posée. L’effet du temps, de la température et de l’ajout d’Al ont été étudiés. L’interface liquide/solide présente une évolution en trois étapes : i) dissolution, ii) step-bunching et iii) facettage, la surface initiale en marches et terrasses se décomposant en facettes de type (0001), (10-1n) et (01-1n). L’augmentation de la température de 1600°C à 1800°C provoque le même effet que l’ajout d’aluminium : une accélération de la deuxième étape ainsi qu’une limitation de la troisième étape. Dans le chapitre 4, des phénomènes transitoires ont été étudiés lorsque le substrat touche la surface du liquide. A l’instant du contact, il a été démontré par simulation numérique que le liquide au voisinage du substrat est sujet à de très fortes fluctuations de températures et donc à de fortes fluctuations de sursaturation. Ceci est à l’origine d’une germination transitoire de 3C-SiC sur la surface du cristal et ce, même à très haute température. Ce phénomène peut être évité soit en préchauffant le cristal avant le contact soit en ajoutant de l’aluminium dans le liquide. L’amélioration de la convection forcée est un moyen efficace pour augmenter la vitesse de croissance. Cependant, au-delà d’une certaine vitesse de rotation du cristal, un type d’instabilité spécifique se développe. Elle est basée sur l’interaction entre la direction d’avancée de marches à la surface du cristal et la direction locale du flux de liquide au voisinage de la surface. Ceci fait l’objet du chapitre 5. Finalement, la concentration de porteurs ainsi que la concentration totale en azote (N) et en aluminium (Al) sont étudiées en fonction de différents paramètres de croissance dans le chapitre 6. Une concentration en Al aussi élevée que 5E+20 at/cm3 a pu être obtenue à 1850°C. Cette valeur est très prometteuse pour le futur développement de substrats de 4H-SiC de type p+. / Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for modern power electronics. Bulk single crystals and active epilayers are industrially produced by vapor phase processes, namely seeded sublimation growth (PVT) and chemical vapor deposition (CVD) respectively. The high temperature solution growth is currently being revisited due to its potential for achieving high structural quality. This work is a contribution to the development of the top seeded solution growth (TSSG) process, with a special focus on heavily p-type doped 4H-SiC crystals. Aluminum (Al) is the most commonly used acceptor in SiC. Different elementary steps of the process are studied, and for every cases, the effect of Al is considered and discussed. After a brief history of SiC material, basic structural and physical properties of silicon carbide are introduced in chapter 1 and discussed with respect to power electronics applications. In chapter 2, the crystal growth puller is detailed and the three most important technical issues of the SiC solution growth process are discussed : i) carbon supply by dissolution at the graphite crucible/liquid interface, ii) carbon transport from the dissolution area to the growth front, and iii) crystallization on the seed substrate. These three steps are studied and improved by adding transition metals (Fe or Cr) to the solvent in order to increase the carbon solubility, by increasing the carbon transport with the optimization of the forced convection (i.e. rotation of the crystal) and by stabilizing the growth front. After optimization, a 4H-SiC crystal is demonstrated with a growth rate of over 300 µm/h and a diameter enlargement of about 41% compared to the original seed size. Chapter 3 is dedicated to the investigation of the interaction between the liquid solvent and the 4H-SiC surface under equilibrium conditions, i.e. without any growth, using a sessile drop method. Effect of time, temperature and the addition of Al to pure liquid silicon are investigated. It is shown that the liquid/solid exhibits a three stages evolution: i) dissolution, ii) step bunching and iii) faceting, the original step and terrace structure being decomposed into (0001), (10-1n) and (01-1n) facets. Increasing the temperature from 1600°C to 1800°C or adding Al drastically enhances the second stage, but reduces the third one. In chapter 4, transient phenomena during the seeding stage of the growth process on the seed crystal are investigated. With the help of numerical modeling, it is shown that strong temperature fluctuations during the contact between the seed and the liquid can give rise to transient 3C-SiC nucleation on the crystal surface, even at high temperatures. This phenomenon can be avoided by either pre-heating the seed or by adding Al. Increasing forced convection (rotation rate of the crystal) is a good way to increase the growth rate. However, above a critical rotation rate, a special surface instability develops. It is based on the interaction between the step flow at the growing surface and the local fluid flow directions close to the surface. This is investigated in Chapter 5. Finally, carrier concentrations and total dopant (nitrogen and aluminum) concentrations are investigated as a function of different process parameters in chapter 6. Al incorporation as high as 5E+20 at/cm3 has been achieved in layers grown at 1850°C. This value is very promising for the future development of p+ 4H-SiC substrates.

abstract: Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. Advanced CMOS microcontrollers are ideal for generating the PWM signals but are limited in output voltage due to their low breakdown voltage within the CMOS drive circuits. As a result, an intermediate buffer stage is required between the CMOS circuitry and the JFET. In this thesis, a discrete silicon-on-insulator (SOI) metal semiconductor field effect transistor (MESFET) was used to drive the gate of a SiC power JFET switching a 120V RMS AC supply into a 30&#937; load. The wide operating temperature range and high breakdown voltage of up to 50V make the SOI MESFET ideal for power electronics in extreme environments. Characteristic curves for the MESFET were measured up to 250&degC.; To drive the JFET, the MESFET was DC biased and then driven by a 1.2V square wave PWM signal to switch the JFET gate from 0 to 10V at frequencies up to 20kHz. For simplicity, the 1.2V PWM square wave signal was provided by a 555 timer. The JFET gate drive circuit was measured at high temperatures up to 235&degC.; The circuit operated well at the high temperatures without any damage to the SOI MESFET or SiC JFET. The drive current of the JFET was limited by the duty cycle range of the 555 timer used. The SiC JFET drain current decreased with increased temperature. Due to the easy integration of MESFETs into SOI CMOS processes, MESFETs can be fabricated alongside MOSFETs without any changes in the process flow. This thesis demonstrates the feasibility of integrating a MESFET with CMOS PWM circuitry for a completely integrated SiC driver thus eliminating the need for the intermediate buffer stage. / Dissertation/Thesis / M.S. Electrical Engineering 2010

Les matériaux composites à matrice céramique (CMCs) à matrice auto-cicatrisantes (MAC) sont développées depuis plusieurs années pour leurs possibilités d'application dans le domaine de la propulsion aéronautique où ils se révèlent trés intéressants en termes de résistance à des conditions sévères et de légèreté. Dans le cadre d'un programme d'étude du comportement des CMC-MAC et de leurs mécanismes d'endommagement, l'objectif de ces travaux est de construire un modèle numérique multi-physique permettant de déterminer la durée de vie d'un échantillon d'un tel matériau soumis à une contrainte mécanique dans un environnement oxydant. L'étude porte sur la mise en place d'un couplage entre deux codes de calcul : un code d'endommagement mécanique et un code physico-chimique qui a été développé au cours de cette thèse. De façon inédite, on se place dans la géométrie 2D d'un plan de fissure, partant d'une image détaillée de l'arrangement des constituants (fibres, interphases, matrice multi-couche). Les différentes parties du programme ont été validées indépendamment et des résultats du calcul complet sont présentés et discutés. / Self-Healing Ceramics Matrix Composites (HT-CMC) are developed since several years for theirapplication in aeronautic applications and are interesting for their good resistance to criticalenvironments. As part of a study program of the HT-CMC behavior and their damagemechanisms, the objective of this thesis is to build a multi-physics numerical model todetermine the lifetime of a sample such a material subjected to a mechanical stress in anoxidizing environment. The study focuses on the establishment of a coupling between twocomputer codes: a code of mechanical damage and a physical-chemical code that wasdeveloped during this thesis. In an unprecedented way, we place ourselves in the 2D geometryof a crack plane, starting from a detailed picture of the arrangement of the components (fiber,interphase, multi-layer matrix). The different parts of the code have been independentlyvalidated and the results of the complete calculation are presented and discussed.

Les recherches portant sur le développement des composites réfractaires de type SiCf/SiC pour application gainage du combustible des réacteurs de géneration IV ont conduit le CEA à s’intéresser aucomportement thermique de ces matériaux. En particulier, la connaissance des propriétés thermiques représente un des points cles dans la conception des composants. Au regard du concept sandwichdont la complexité de structure et la géométrie cylindrique s'éloigne de celle d'éprouvettes planes classiquement utilisées, les méthodes de mesures usuelles ne conviennent pas.Ce travail de thèse s’intéresse à la caractérisation et à la modélisation du comportement thermiquede ces structures. Une première partie du travail concerne l'identification des paramètres thermiquesglobaux des différentes couches constitutives d'une gaine sandwich . Pour cela, une méthodeash est employée et un banc d’expériences adapte aux géométries tubulaires a pu être développe.L’écriture d'un nouveau modèle d'estimation, fonde sur le couplage des signaux recueillis à la fois enface avant et en face arrière, permet aujourd'hui d’accéder par la mesure a la diffusivité thermiquedes composites tubulaires via la thermographie infrarouge. Dans une seconde partie de la thèse,une démarche matériau virtuel a été mise en place pour décrire le comportement thermique d'unegaine sandwich à partir des propriétés des constituants élémentaires (bres et matrice). Cespropriétés, obtenues avec deux méthodes d'estimation différentes permettant d'exploiter les mesuresde deux expériences distinctes basées sur la thermographie infrarouge, sont utilisées comme donnéespour la modélisation du transfert thermique au sein de ces gaines. Les confrontations réalisées entrecampagnes de mesures et expériences numériques permettent normalement d’appréhender le poids desdifférents facteurs d'influence qui régissent les transferts thermiques. / Researches on the development on SiCf/SiC refractory composites for generation IV nuclear fuel cladding led the CEA to focus on the thermal behavior of these materials. In particular, knowingthe thermal properties is essential for their components design. Regarding the development of the sandwich" concept, whose complexity and geometry differ from the conventionally used at tubes,usual measurement methods are unsuitable.This PhD reports on the characterization and modeling of the thermal behavior of these structures. The first part concerns the identification of the global thermal parameters of the diferent layers of a"sandwich" sheath. To do so, a ash method is used and an experimental bench suitable for tubular geometries was developed. A new estimation method based on the combination of both collectedsignals in front and rear faces allows the identification of the thermal diffusivity of tubular composites using infrared thermography. The second part focuses on a virtual material approach, established todescribe the thermal behavior of a "sandwich" cladding, starting from the properties of the elementary components (bers and matrix). These properties, obtained using two different estimation methods,allows exploiting the measurements of two separate experiments based on infrared thermography.They are then used as data for the heat transfer modeling in these ducts. Confrontations betweenexperimental measurements and numerical results finally allow gaining insight into the in uence ofthe different key parameters governing the heat transfer.