Doctor of Philosophy / Department of Chemical Engineering / James H. Edgar / Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200μm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched ¹⁰B and ¹¹B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. ¹⁰B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E[subscript 2g] mode. Crystals with enrichment of 99% ¹⁰B and >99% ¹¹B were achieved, with corresponding Raman shift peaks at 1392.0 cm⁻¹ and 1356.6 cm⁻¹, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm⁻¹ achieved, compared to 8.0 cm⁻¹ for natural abundance samples. Defect selective etching was performed using a molten NaOH-KOH etchant at 425°C-525°C, to quantify the quality of the crystals. Three etch pit shapes were identified and etch pit width was investigated as a function of temperature. Etch pit density and etch pit activation energy was estimated at 5×10⁷ cm⁻² and 60 kJ/mol, respectively. Screw and mixed-type dislocations were identified using diffraction-contrast TEM imaging.

Master of Science / Department of Chemical Engineering / James H. Edgar / Pure boron exists in two main polymorphs, the common β-rhombohedral boron and the relatively rare α-rhombohedral boron. α-rhombohedral boron (α-B) possesses several extraordinary properties: self-healing from radiation damage and a high hole mobility. In addition, the [superscript]10B isotope has a large thermal neutron capture cross section. Such properties make it an excellent candidate for novel electronic device, such as direct energy conversion devices (alphacells and betacells) and neutron detectors. However, research on the properties and applications of α-B has been limited due to the difficulty to produce high quality α-B crystals of significant size. The preparation of α-rhombohedral boron is challenging for several reasons: first, α-rhombohedral boron has a low thermodynamic stability; it is only stable below 1100°C, at higher temperature β-rhombohedral boron is the stable polymorph. In addition, at elevated temperatures, boron is highly reactive, which make it is difficult to produce pure boron crystals. The primary goal of this research was to produce high quality α-B crystals of significant size. The main focus of this study was to explore the feasibility of producing α-B from a copper flux. Copper is a promising solvent for α-B crystal growth: the eutectic temperature of copper-boron is low, 996°C, and the phase diagram of copper-boron is relatively simple, and there are not many intermediate boride-copper compounds. In addition, copper is easily removed from crystals by etching with concentrated nitric acid. Last but not least, copper is less expensive than other metal solvents such as platinum. Boron crystal growth from a platinum solvent and vapor-liquid-solid growth by chemical vapor deposition were also performed for comparison. A series of crystals were grown over a range of initial boron concentrations (9.9 to 27.7 mole %) and cooling rates. Small irregular-shaped black crystals (>100μm) and well-faceted red crystals in various shapes, as large as 500 microns were produced. The crystals were characterized by optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction analysis, and Raman spectroscopy. The correlation between experiment results and experimental parameters (source materials, the purity of growth atmosphere, and crucible materials, etc.) are reported. Suggestions about further investigation for α-B crystal growth are proposed.

The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe2As2 were grown. This pristine compound BaFe2As2 undergoes structural and magnetic transition at TS/N=137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as Tc = 34 K with Na substitution and Tc = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe2As2. Single crystals of LiFe1−xCoxAs with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed. Single crystals of KFe2As2 were grown with two different fluxes, namely, FeAs-flux and KAs-flux. The superconducting transition is found to be at 3.8K in both the crystals. The influence of doping with selected elements like Na, Rh, Co and Cr has been investigated systematically in KFe2As2 single crystals. With Na-doping at the K-site, yield (K1−xNax)Fe2As2; superconductivity is suppressed to lower temperatures. Substitution of Co and Cr at Fe site, yield K(Fe0.95Co0.05)2As2, K(Fe0.95Cr0.05)2As2 superconductivity is rapidly killed. Single crystals of (Ba0.6Eu0.4)(Fe1−xCox)2As2 with x = 0, 0.05, 0.1, 0.15 and 0.2 were grown with solution growth technique using Fe-As flux and investigated with several physical measurements. The growth conditions are highly optimized to grow flux free large single crystals especially in case of BaFe2As2 family. The high quality of the crystals were revealed by several physical properties, for e.g. single crystals of Ba(Fe1−xCox)2As2 are of the highest quality which was confirmed by the magnetic ac susceptibility which showed a very sharp superconducting transition.

Cette thèse vise à trouver des approches possibles pour l’amélioration des propriétés électromécaniques de monocristaux piézoélectriques à base de KNN. La TSSG et la SSSG sont entreprises afin de faire croître des monocristaux La conclusion de l'aspect de croissance cristalline est: (1) Pour chaque élément pris individuellement, leurs coefficients de ségrégation reposent fortement sur leurs concentrations initiales dans la solution liquide. (2) La compétition entre éléments occupant le même site du réseau est démontrée. (3) Le très faible coefficient de ségrégation de Li dans la matrice KNN est responsable de l'apparition d'une phase secondaire présentant la structure bronze de tungstène quadratique. (4) Les régions optiquement laiteuses observées dans les monocristaux diminuent la réponse électrique et peuvent être réduites par traitement thermique et refroidissement lent. Dans la deuxième partie, nous avons utilisé trois approches pour améliorer le comportement piézo/ferroélectrique des monocristaux à base de KNN. La Ta ou Sb substitution indique qu'une réponse électromécanique améliorée est obtenue lorsque la transition orthorhombique-quadratique est à proximité de la température ambiante. Le traitement thermique sous atmosphère d'O2 pur a conduit au doublement de la valeur du coefficient piézoélectrique et des paramètres ferroélectriques d'un monocristal de (K,Na,Li) (Ta,Nb,Sb)O3. Son coefficient piézoélectrique à la température ambiante, qui constitue un record mondial à l’heure actuelle vis-à-vis de ce qui est reporté dans la littérature internationale, vaut 732 pC/N. La troisième approche consiste au dopage des monocristaux de (K,Na,Li)(Ta,Nb)O3 avec Mn. / The thesis aims to find possible approaches for improved electromechanical properties in KNN-based piezoelectric single crystals. Both submerged-seed and top-seeded solution growth techniques were employed to produce single crystals. Conclusions from the crystal growth aspect are: (i) For individual elements, segregation coefficients highly rely on the initial concentration in the liquid solution. (ii) A competition between elements occupied on the same lattice site was found. (iii) The very low Li segregation coefficient in the KNN matrix is responsible for the occurrence of a secondary phase with the tetragonal tungsten bronze structure. (iv) Observed optically-cloudy regions in as-grown crystals decrease the electrical response and can be reduced by thermal treatment with slow cooling. In the second part, we used three approaches to enhance the piezoelectric and ferroelectric behavior of KNN-based single crystals. Ta or Sb substitutions indicates that enhanced electromechanical response is achieved when the orthorhombic-tetragonal phase transition is near room temperature. Thermal treatment in pure O2 atmosphere resulted in a twofold increase of the piezoelectric coefficient and ferroelectric parameters of a (K,Na,Li)(Ta,Nb,Sb)O3 single crystal. The highest room-temperature piezoelectric coefficient in annealed KNN-based single crystals of 732 pC/N was obtained. The third approach, doping with Mn ions in (K,Na,Li)(Ta,Nb)O3 single crystals, is also presented.

Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matériau clé pour l’électronique de puissance. Les cristaux massifs ainsi que les couches épitaxiales actives sont aujourd’hui obtenus par des procédés en phase gazeuse, comme la croissance par sublimation (ou PVT) et le dépôt chimique en phase gazeuse (CVD), respectivement. Le procédé de croissance en solution à haute température est actuellement revisité en raison de sa capacité à atteindre des qualités cristallines exceptionnelles. Ce travail est une contribution au développement du procédé de croissance en solution à partir d’un germe (TSSG), avec comme objectif principal l’accès à des cristaux de 4H-SiC fortement dopés de type p. Le dopant p le plus utilisé est l’Aluminium. Différentes étapes élémentaires du procédé sont étudiées, avec pour chaque étape l’évaluation de l’effet de l’Al. Après un bref rappel historique sur le SiC, les données fondamentales du SiC sont introduites dans le chapitre 1 et discutées par rapport aux applications en électronique de puissance. Dans le chapitre 2, le réacteur de croissance est détaillé. Les trois principaux aspects techniques du procédé sont exposés : i) l’apport en carbone par dissolution à l’interface entre le creuset en graphite et le liquide, ii) le transport du carbone de la zone de dissolution à la zone de cristallisation, et iii) la cristallisation sur le germe. Ces trois aspects ont été étudiés et améliorés par l’ajout de métaux de transition (Fe ou Cr) au solvant de façon à augmenter la solubilité en carbone, en favorisant le transport du carbone par l’optimisation de la convection forcée (i.e. la rotation du cristal) et en stabilisant le front de croissance. Après optimisation, un cristal de 4H-SiC a pu être obtenu à une vitesse supérieure à 300 µm/hr et avec un élargissement du diamètre d’environ 41% par rapport au diamètre initial du germe. Le chapitre 3 porte sur l’étude de l’interaction entre le solvant et la surface du 4H-SiC à l’équilibre, sans croissance, en utilisant la méthode de la goutte posée. L’effet du temps, de la température et de l’ajout d’Al ont été étudiés. L’interface liquide/solide présente une évolution en trois étapes : i) dissolution, ii) step-bunching et iii) facettage, la surface initiale en marches et terrasses se décomposant en facettes de type (0001), (10-1n) et (01-1n). L’augmentation de la température de 1600°C à 1800°C provoque le même effet que l’ajout d’aluminium : une accélération de la deuxième étape ainsi qu’une limitation de la troisième étape. Dans le chapitre 4, des phénomènes transitoires ont été étudiés lorsque le substrat touche la surface du liquide. A l’instant du contact, il a été démontré par simulation numérique que le liquide au voisinage du substrat est sujet à de très fortes fluctuations de températures et donc à de fortes fluctuations de sursaturation. Ceci est à l’origine d’une germination transitoire de 3C-SiC sur la surface du cristal et ce, même à très haute température. Ce phénomène peut être évité soit en préchauffant le cristal avant le contact soit en ajoutant de l’aluminium dans le liquide. L’amélioration de la convection forcée est un moyen efficace pour augmenter la vitesse de croissance. Cependant, au-delà d’une certaine vitesse de rotation du cristal, un type d’instabilité spécifique se développe. Elle est basée sur l’interaction entre la direction d’avancée de marches à la surface du cristal et la direction locale du flux de liquide au voisinage de la surface. Ceci fait l’objet du chapitre 5. Finalement, la concentration de porteurs ainsi que la concentration totale en azote (N) et en aluminium (Al) sont étudiées en fonction de différents paramètres de croissance dans le chapitre 6. Une concentration en Al aussi élevée que 5E+20 at/cm3 a pu être obtenue à 1850°C. Cette valeur est très prometteuse pour le futur développement de substrats de 4H-SiC de type p+. / Silicon Carbide is a wide band gap semiconductor which has recently imposed as a key material for modern power electronics. Bulk single crystals and active epilayers are industrially produced by vapor phase processes, namely seeded sublimation growth (PVT) and chemical vapor deposition (CVD) respectively. The high temperature solution growth is currently being revisited due to its potential for achieving high structural quality. This work is a contribution to the development of the top seeded solution growth (TSSG) process, with a special focus on heavily p-type doped 4H-SiC crystals. Aluminum (Al) is the most commonly used acceptor in SiC. Different elementary steps of the process are studied, and for every cases, the effect of Al is considered and discussed. After a brief history of SiC material, basic structural and physical properties of silicon carbide are introduced in chapter 1 and discussed with respect to power electronics applications. In chapter 2, the crystal growth puller is detailed and the three most important technical issues of the SiC solution growth process are discussed : i) carbon supply by dissolution at the graphite crucible/liquid interface, ii) carbon transport from the dissolution area to the growth front, and iii) crystallization on the seed substrate. These three steps are studied and improved by adding transition metals (Fe or Cr) to the solvent in order to increase the carbon solubility, by increasing the carbon transport with the optimization of the forced convection (i.e. rotation of the crystal) and by stabilizing the growth front. After optimization, a 4H-SiC crystal is demonstrated with a growth rate of over 300 µm/h and a diameter enlargement of about 41% compared to the original seed size. Chapter 3 is dedicated to the investigation of the interaction between the liquid solvent and the 4H-SiC surface under equilibrium conditions, i.e. without any growth, using a sessile drop method. Effect of time, temperature and the addition of Al to pure liquid silicon are investigated. It is shown that the liquid/solid exhibits a three stages evolution: i) dissolution, ii) step bunching and iii) faceting, the original step and terrace structure being decomposed into (0001), (10-1n) and (01-1n) facets. Increasing the temperature from 1600°C to 1800°C or adding Al drastically enhances the second stage, but reduces the third one. In chapter 4, transient phenomena during the seeding stage of the growth process on the seed crystal are investigated. With the help of numerical modeling, it is shown that strong temperature fluctuations during the contact between the seed and the liquid can give rise to transient 3C-SiC nucleation on the crystal surface, even at high temperatures. This phenomenon can be avoided by either pre-heating the seed or by adding Al. Increasing forced convection (rotation rate of the crystal) is a good way to increase the growth rate. However, above a critical rotation rate, a special surface instability develops. It is based on the interaction between the step flow at the growing surface and the local fluid flow directions close to the surface. This is investigated in Chapter 5. Finally, carrier concentrations and total dopant (nitrogen and aluminum) concentrations are investigated as a function of different process parameters in chapter 6. Al incorporation as high as 5E+20 at/cm3 has been achieved in layers grown at 1850°C. This value is very promising for the future development of p+ 4H-SiC substrates.

Master of Science / Department of Chemical Engineering / J. H. Edgar / Boron phosphide, BP, is a III-V compound semiconductor with a wide band gap of 2.0 eV that is potentially useful in solid state neutron detectors because of the large thermal neutron capture cross-section of the boron-10 isotope (3840 barns). In this study, cubic BP crystals were grown by crystallizing dissolved boron and phosphorus from a nickel solvent in a sealed (previously evacuated) quartz tube. The boron - nickel solution was located at one end of the tube and held at 1150°C. Phosphorus, initially at the opposite end of the tube at a temperature of 430°C, vaporized, filling the tube to a pressure of 1–5 atmospheres. The phosphorus then dissolved into solution, producing BP. Transparent red crystals up to 4 mm in the largest dimension with mostly hexagonal shape were obtained with a cooling rate of 3°C per hour. The crystal size decreased as the cooling rate increased, and also as growth time decreased. The characterization with x-ray diffraction (XRD) and Raman spectroscopy established that the BP produced through this method were highly crystalline. The lattice constant of the crystals was 4.534 Ǻ, as measured by x-ray diffraction. Intense, sharp Raman phonon peaks were located at 800 cm[superscript]-1 and 830 cm[superscript]-1, in agreement with the values reported in the literature. The FWHM for XRD and Raman spectra were 0.275° and 4 cm[superscript]-1 which are the narrowest ever reported and demonstrates the high quality of the produced crystals. Energy dispersive x-ray spectroscopy (EDS) and scanning electron microscope (SEM) also confirmed the synthesized crystals were cubic BP crystals, with a boron to phosphorus atomic ratio of 1:1. Defect selective etching of BP at 300ºC for two minutes with molten KOH/NaOH revealed triangular and striated etch pits with low densities of defects of ~4 x 10[superscript]7 cm[superscript]-2 and 9.2 x 10[superscript]7 cm[superscript]-2 respectively. The BP crystals were n-type, and an electron mobility of ~39.8 cm[superscript]2/V*s was measured. This is favorable for application in neutron detection. Scaling to larger sizes is the next step through gradient freezing and employing a larger crucible.

Die vorliegende Arbeit behandelt die Züchtung von mikrokristallinem Silicium auf Glas bei niedrigen Temperaturen. Da Glas ein amorphes Material ist, können konventionelle Epitaxietechniken nicht angewendet werden. Im untersuchten Wachstumsprozess werden zunächst Silicium-Saatkristallite durch Anwendung des Vapor-Liquid-Solid Verfahrens abgeschieden. Als Lösungsmittel kommt Indium zum Einsatz. Die so erzeugten Kristallite werden anschließend mittels stationärer Lösungszüchtung vergrößert. Bei der Apparatur handelt es sich um einen Prototypen im Labormaßstab, welcher aus einer vertikalen Anordnung eines Sättigungssubstrates und des Lösungsmittels (Indium) besteht. Ein Temperaturgradient bewirkt gleichzeitig eine ausreichende Übersättigung der Nährlösung sowie konvektiven Stofftransport zum oben befindlichen Züchtungssubstrat. Die chemische Stabilität verschiedener Zwischenschichten wurde durch Berechnungen im ternären Stoffsystem Molybdän, Silicium und Indium betrachtet. Darauf basierend erfolgte die Präparation von MoSi2 auf Glas durch Temperung alternierender Molybdän-Silicium Schichtpakete. Die Stabilität dieser Schichten im Kontakt mit Silicium gesättigter Züchtungslösung konnte experimentell nachgewiesen werden. Die anschließende Untersuchung des Vapor-Liquid-Solid Prozesses auf MoSi2-Schichten zeigte eine signifikante Anhängigkeit von den Parametern der Schichtpräparation sowie der Substrattemperatur während der Lösungsmittelverdampfung. Saatkristallite wurden mittels stationärer Lösungszüchtung ausgewachsen und das gezüchtete Material bezüglich Kristallinität, Orientierung und Reinheit charakterisiert. Zusätzlich standen Untersuchungen zur Morphologie im Vordergrund. Die prinzipielle Anwendbarkeit des Prozesses zur Abscheidung von mikrokristallinem Silicium auf Glas konnte nachgewiesen werden. Allerdings verbleiben Limitierungen bezüglich des erreichbaren Bedeckungsgrades sowie der Größe unter stabilen Bedingungen gewachsener Silicium Kristallite. / This work deals with low-temperature solution growth of micro-crystalline silicon on glass. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals, which is realized by means of vapor-liquid-solid processing using indium as solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype consists of a vertical stack of a silicon feeding source and the solvent (indium). A temperature gradient between feeding source and growth substrate at the top promotes both, supersaturation and material transport by solvent convection. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600°C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating material is proposed. MoSi2 thin films on glass are shown to resist solution contact. Subsequent investigation of feasibility of the vapor-liquid-solid mechanism revealed the success of indium microdroplet formation to be determined by both, the multilayer deposition parameters and the substrate temperature during indium deposition. Steady-state solution growth at 610°C was utilized to enlarge silicon seed crystals to diameters of up to 200 micrometer. The grown material has been subject of characterization regarding the crystallinity, orientation and purity. Additionally, morphological anomalies are considered. The feasibility of the process for growth of microcrystalline silicon on glass has been shown in principle. Nevertheless, limitations exist regarding the achievable crystalline solidity ratio and the size of crystallites grown under stable conditions.

The thesis work presented here emphasizes important aspects of crystal growth and the influence of chemical substitution in Fe-As superconductors. High temperature solution growth technique is one of most powerful and widely used technique to grow single crystals of various materials. The biggest advantage of high temperature solution growth technique is the, possibility of growing single crystals from both congruently and incongruently melting materials. Solution growth technique has the potential to control high vapour pressures, given the fact that, in Fe-based superconductors elements with high vapour pressure like As, K, Li and Na have to be handled during the crystal growth procedure. In this scenario high temperature solution growth is the best suitable growth technique to synthesize sizable homogeneous single crystals. Using self-flux high temperature solution growth technique, large centimeter-sized high quality single crystals of BaFe2As2 were grown. This pristine compound BaFe2As2 undergoes structural and magnetic transition at TS/N=137 K. By suppressing this magnetic transition and stabilizing tetragonal phase with chemical substitution, like Co-doping and Na-doping, bulk superconductivity is achieved. Superconducting transitions of as high as Tc = 34 K with Na substitution and Tc = 25 K with Co-doping were obtained. A combined electronic phase diagram has been achieved for both electron doping with Co and hole doping with Na in BaFe2As2. Single crystals of LiFe1−xCoxAs with x = 0, 0.025, 0.05 and 0.075 were grown by a self-flux high temperature solution growth technique. The charge doping in LiFeAs is achieved with the Co-doping in Fe atoms. The superconducting properties investigated by means of temperature dependent magnetization and resistivity revealed that superconductivity is shifted to lower temperatures and with higher amount of charge carriers superconductivity is killed. Single crystals of KFe2As2 were grown with two different fluxes, namely, FeAs-flux and KAs-flux. The superconducting transition is found to be at 3.8K in both the crystals. The influence of doping with selected elements like Na, Rh, Co and Cr has been investigated systematically in KFe2As2 single crystals. With Na-doping at the K-site, yield (K1−xNax)Fe2As2; superconductivity is suppressed to lower temperatures. Substitution of Co and Cr at Fe site, yield K(Fe0.95Co0.05)2As2, K(Fe0.95Cr0.05)2As2 superconductivity is rapidly killed. Single crystals of (Ba0.6Eu0.4)(Fe1−xCox)2As2 with x = 0, 0.05, 0.1, 0.15 and 0.2 were grown with solution growth technique using Fe-As flux and investigated with several physical measurements. The growth conditions are highly optimized to grow flux free large single crystals especially in case of BaFe2As2 family. The high quality of the crystals were revealed by several physical properties, for e.g. single crystals of Ba(Fe1−xCox)2As2 are of the highest quality which was confirmed by the magnetic ac susceptibility which showed a very sharp superconducting transition.

The semiconducting compounds CdTe and CdZnTe have important applications in high-energy radiation detectors and as substrates for infrared devices. The materials offer large band gaps, high resistivity, and excellent charge transport properties; however all of these properties rely on very precise control of the material composition. Growing bulk crystals by the travelling heater method (THM) offers excellent compositional control and fewer defects compared to gradient freezing, but it is also much slower and more expensive. A particular challenge is the current need to grow new crystals onto existing seeds of similar size and quality. Simulations and experiments are used in this work to investigate the feasibility of growing these materials by THM without the use of large seed crystals. A new fixed-grid, multiphase finite element model was developed based on the level set method and used to calculate the mass transport regime and interface shapes inside the growth ampoule. The diffusivity of CdTe in liquid tellurium was measured through dissolution experiments, which also served to validate the model. Simulations of tapered THM growth find conditions similar to untapered growth with interface shapes that are sensitive to strong thermosolutal convection. Favourable growth conditions are achievable only if convection can be controlled. In preliminary experiments, tapered GaSb crystals were successfully grown by THM and large CdTe grains were produced by gradient freezing. Beginning with this seed material, 25 mm diameter CdTe and CdZnTe crystals were grown on 10 mm diameter seeds, and 65 mm diameter CdTe on 25 mm seeds. Unseeded THM growth was also investigated, as well as ampoule rotation and a range of thermal conditions and ampoule surface coatings. Outward growth beyond one or two centimeters was achieved only at small diameters and included secondary grains and twin defects; however, limited outward growth of larger seeds and agreement between experimental and numerical results suggest that tapered growth may be achievable in the future. This would require active temperature control at the base of the crystal and reduction of convection through thermal design or by rotation of the ampoule or applied magnetic fields. / Graduate / 0346 / 0794 / 0548 / jordan.roszmann@gmail.com

Mit der vorliegenden Arbeit wird das Wachstum von polykristallinem Silicium auf Glas bei niedrigen Temperaturen aus metallischen Lösungen in einem Zweistufenprozess untersucht. Im ersten Prozessschritt werden nanokristalline Siliziumschichten (nc-Si) hergestellt, entweder durch die direkte Abscheidung auf geheizten Substraten oder durch als ''Amorphous-Liquid-Crystalline''(ALC)-Umwandlung bezeichnete metall-induzierte Kristallisation. Im zweiten Prozessschritt dienen die Saatschichten als Vorlage für das Wachstum von deutlich größeren Kristalliten durch stationäre Lösungszüchtung. Die ALC-Prozessdauer konnte durch umfassende Parameterstudien signifikant reduziert werden. Die Charakterisierung der durch direkte Abscheidung auf geheizten Substraten entstehenden nc-Si Saatschichten offenbarte, dass es sich dabei um individuelle Saatkörner handelt, die in eine quasi-amorphe Matrix eingebettet sind. Die Oxidation der Saatschichten vor dem zweiten Prozessschritt wurde als ein wesentliches Hindernis für das Wachstum identifiziert. Als erfolgreichste Lösung zur Überwindung dieses Problems hat sich ein anfänglicher Rücklöseschritt erwiesen. Da diese Methode jedoch schwierig zu kontrollieren ist, wurde ein UV-Laser-System entwickelt und installiert. Erste Resultate zeigen epitaktisches Wachstum an den Stellen, an denen das Oxid entfernt wurde. Bei der Lösungszüchtung auf ALC-Schichten beginnt das Wachstum an einigen größeren Saatkristallen, von wo aus umliegende Gebiete lateral überwachsen werden. Obwohl Kristallitgrößen bis zu 50 Mikrometern erreicht wurden, war es noch nicht möglich, geschlossene Schichten zu erzielen. Durch Lösungszüchtung auf nc-Si Saatschichten hingegen konnte dieses Ziel erreicht werden. Geschlossene, polykristalline Si-Schichten wurden erzeugt, auf denen alle Si-Kristallite miteinander verbunden sind. Neben den Wachstumsexperimenten wurden 3D-Simulationen durchgeführt, in denen u.a. unterschiedliche Heizerkonfigurationen simuliert wurden. / The subject of this thesis is the investigation of the growth of polycrystalline silicon on glass at low temperatures from metallic solutions in a two-step growth process. In the first process step, nanocrystalline Si (nc-Si) films are formed either by direct deposition on heated substrates, or by a metal-induced crystallization process, referred to as amorphous-liquid-crystalline (ALC) transition. In the second process step, these seed layers serve as templates for the growth of significantly larger Si crystallites by means of steady-state solution growth. Extensive parameter studies for the ALC process helped to bring down the process duration significantly. Characterization of the nc-Si seed layers, formed by direct deposition on heated substrates, showed that the layer is composed of individual seeds, embedded in a quasi-amorphous matrix. The oxidation of the seed layers prior to the second process step was found to be a major obstacle. The most successful solution has been an initial melt-back step. As the process is hard to control, though, a UV laser system has been developed and installed. First promising results show unobstructed epitaxial growth where the oxide has been removed. Steady-state solution growth on ALC seed layers was found to start from a few larger seed crystals, and then cover the surrounding areas by lateral overgrowth. Although crystallites with sizes of up to 50 micrometers were obtained, it was not yet possible to achieve full surface coverage with a continuous layer. By solution growth on nc-Si seed layers, however, it was eventually possible to achieve this goal. Continuous, polycrystalline Si layers were grown, on which all Si crystallites are interlocked. The growth experiments were accompanied by 3D simulations, in which e.g. different heater configurations have been simulated.