The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process in silica and the characterization of formed clusters is presented. Silicon dioxide layers ~500 nm thick are thermally grown on a Si (100) wafer. The SiO2 layers are then implanted with 70 keV carbon ions at a fluence of 5×1017 atoms/cm2. The implanted samples are annealed 1100 °C for different time periods of 10 min., 30 min., 60 min., 90 min., and 120 min., in the mixture of argon and hydrogen gas (96 % Ar + 4% hydrogen). Photoluminescence spectroscopy reveals UV to visible emission from the samples. A detail mechanism of the photoluminescence and its possible origin is discussed by correlating the structural and optical properties of the samples. Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, spectroscopy, photoluminescence spectroscopy, and transmission electron microscopy are used to characterize the samples.

Doping control is the most important technology for any semiconductor system. In spite of significant progress in the doping of SiC, advancements are needed in the growth techniques and dopant incorporation. During processes such as Chemical Vapor Deposition (CVD), hydrogen is known to be trapped at defects or impurities and to alter the electrical properties of the material. This effect is known as ?hydrogen passivation?. In addition to the observed hydrogen passivation of shallow impurities in SiC crystals, it is important to know whether, and how, hydrogen present in the epi ? reactor can passivate doping impurities during growth of the material. Variations in hydrogen incorporation can affect the net doping density and make process control difficult. This makes it essential for technologists to understand the process of hydrogen passivation and its effects on the doping concentration in the crystal. To understand this phenomenon, a process has been developed to intentionally hydrogenate SiC crystals by striking a hydrogen plasma using the Reactive Ion Etching (RIE) System in the Emerging Materials Research Laboratory at MSU. Photoluminescence (PL) and Capacitance ? Voltage (CV) were used to determine the effect of hydrogen incorporation on dopants in the SiC crystal lattice. Crystal annealing was performed at 1000 oC using the Thermco Oxidation Furnace to drive hydrogen out of the lattice (a process referred to as ?de-hydrogenation?). PL and CV measurements were taken to look for changes in the hydrogen concentration as well as free carrier concentration, respectively. Experiments conducted during this thesis research were successful in incorporating hydrogen and then driving it out of the lattice. CV profiling did not indicate a considerable change in free carrier concentration, probably because of the shallow diffusion depth of hydrogen in the SiC lattice. More reliable characterization techniques such as Secondary Ion Mass Spectrometry (SIMS) are required to get a clear picture of the doping densities of all chemical species present in the lattice at the end of each processing stage. However, resources did not permit this to be conducted during this preliminary work. As a result of this research, a process for hydrogenating and de-hydrogenating the SiC lattice has been developed to permit more extensive future studies.

SiC etch development has been performed in a Lam TCP 9400SE II system (a system meant for polysilicon etching and modified for SiC etching). SiC etching has never been reported in this particular system. Various parameters (carrier material, pressure, gas additives, gas flow, and electrode power) were examined and their effects determined on etch rate and resulting surface morphology. An efficient carrier material (graphite), operating pressure (25 mTorr), and gas flow rate (30 sccm) for obtaining peak etch rates were determined for this system. Peak etch rates of 1254 Å/min. in CHF3:O2, 4314 Å/min. in SF6:O2, and 1255 Å/min. in NF3:O2 plasmas were obtained at 25 mTorr with 60%, 20%, and 30% O2 concentrations, respectively, and 1978 Å/min. in a NF3:Ar plasma with 10% Ar concentration. Gas additives were determined to have little or no effect in enhancing the etch rate at low pressures (2 mTorr). The addition of H2 in CHF3 plasmas resulted in severe polymerization when the concentration of H2 was 60% or greater. Increased bottom electrode power resulted in higher etch rates and more anisotropic etch profiles.

Recently, the need for high power, high frequency devices continues to grow with the increase in wireless communication, radar systems, HDTV, digital communication, and other military application of the RF spectrum. Traditionally when higher power is needed, one needs to either combine the output power of multiple devices or use vacuum tubes, which are still uncontested at very high power levels, capable of up to a few hundred kilowatts at 5 GHz [11]. But wide band gap semiconductor devices capable of competing in this application. Moreover, the static induction transistor (SIT) in silicon carbide can provide very high total power at microwave frequency. This is due to the vertical structure of the SIT which consists of a vertical channel that is defined by a mesa with gate electrodes of the Schottky type to control the current between a top side source contact and a drain contact on the backside of the wafer. This thesis demonstrates that through careful modeling by means of simulations and inclusion of all significant device physics, good agreement is reached between theoretical prediction and simulation results. It is shown in particular that by careful choice of the device critical parameters, such as mesa width, gate length, and contact resistance, SIT should be able to obtain cut-off frequency up to 42 GHz and shown temperature simulation results of SIT.

This study investigated the role of Sic particles in the mechanical behaviour of a metal matrix composite (Al-SiC). Measurements of the development and magnitude of internal stresses were performed from Bauschinger experiments in the aluminum matrix A-356 reinforced with the Sic particles. The behavior of the Al matrix itself was also analyzed. The level of internal stresses in the particulate reinforced composite was found to saturate after 0.9% plastic strain and after 1.3% in the unreinforced matrix. The initial development of the unrelaxed internal stresses was analyzed using both microscopic and macroscopic models of the load-bearing role of the Sic particles. The Sic particles were found to have little influence on the plastic flow of the composite beyond the initial plastic deformation as the size and distribution of the Sic is very non-uniform. The effect of the Sic phase was compared to continuous fibers embedded in a metallic matrix. A model system of pure copper reinforced with continuous tungsten fibers was used for this purpose. The effect of the internal stresses on the dimensional stability of the particulate reinforced and the unreinforced matrix was also investigated. The generation of dislocations arising from the thermal cycling of those materials was also analyzed by reference to the increase in flow stress observed after thermal cycling and from a model based on dislocations production due to the difference in coefficient of thermal expansion of the phases. / Thesis / Master of Engineering (ME)

Thèse (LL.M.)--Université Laval, 2002. / Bibliogr.: f. [128-141]. Publié aussi en version électronique.

This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both commercial and sample devices from the semiconductor industry's well-known manufacturers were evaluated in this study. These manufacturers include: Cree Inc., ROHM Semiconductor, General Electric, Fairchild Semiconductor, GeneSiC Semiconductor, Infineon Technologies, and SemiSouth Laboratories. To carry out this work, static characterization of each device was performed from 25 ºC to 200 ºC. Dynamic characterization was also conducted through double-pulse tests. Accordingly, this thesis describes the experimental setup used and the different measurements conducted, which comprise: threshold voltage, transconductance, current gain, specific on-resistance, parasitic capacitances, internal gate resistance, and the turn on and turn off switching times and energies. For the latter, the driving method used for each device is described in detail. Furthermore, for the devices that require on-state dc currents, driving losses are taken into consideration. While all of the SiC transistors characterized in this thesis demonstrated low specific on-resistances, the SiC BJT showed the lowest, with Fairchild's FSICBH057A120 SiC BJT having 3.6 mΩ•cm2 (using die area) at 25 ºC. However, the on-resistance of GE's SiC MOSFET proved to have the smallest temperature dependency, increasing by only 59 % from 25 ºC to 200 ºC. From the dynamic characterization, it was shown that Cree's C2M0080120D second generation SiC MOSFET achieved dv/dt rates of 57 V/ns. The SiC MOSFETs also featured low turn off switching energy losses, which were typically less than 70 µJ at 600 V bus voltage and 20 A load current. / Master of Science

In dieser Arbeit wurden winkelaufgeloeste Photoemissionsuntersuchungen (ARUPS)und Messungen der Reflexionsanisotropie (RAS) durchgefuehrt. Fuer die Experimente standen p-3C-SiC(001)/n-3C-SiC(001)/n-Si-Proben zur Verfuegung. Den Mittelpunkt bildeten sowohl die Praeparation verschiedener Oberflaechen- rekonstruktionen als auch die oben genannten Untersuchungsmethoden. Fuer die Praeparation wurden zwei unterschiedliche Heizverfahren verwendet - die Elektronenstoßheizung und die direkte Heizung. Die Charakterisierung der Oberflaechenrekonstruktion erfolgte mittels LEED. Die Untersuchungen wurden an den Hauptrekonstruktionen der (001)-Oberflaeche des kubischen Siliziumkarbids - der (3x2)-, der (2x1)- und der c(2x2)- Rekonstruktion - durchgefuehrt, welche mit der direkten Heizmethode praepa- riert worden waren. Aus den winkelaufgeloesten Photoemissionsspektren konnten die jeweiligen Oberflaechenbandstrukturen ermittelt werden. Daraus ließen sich Schlußfolgerungen ueber die Ausbildung von Oberflaechenzustaenden bzw. Oberflaechenresonanzen treffen. Die RAS-Spektren zeigten für alle Rekonstruk- tionen deutlich unterschiedliche Verlaeufe.

Ce travail concerne l'ajout de GeH4 au système de précurseurs gazeux classique SiH4+C3H8 pour la croissance épitaxiale de SiC par dépôt chimique en phase vapeur. L'objectif principal était d'explorer l'influence de la présence de l'élément Ge (impureté isoélectronique à SiC), dans la matrice SiC ou à sa surface, sur les mécanismes de croissance et sur la qualité et les propriétés des couches minces déposées. La croissance épitaxiale a été réalisée dans la gamme de température 1450-1600°C sur des substrats 4H-SiC(0001) désorientés fortement (4° et 8°) ou faiblement (0° et 1°). Sur les germes désorientés, nous avons exploré l'impact des atomes de Ge sur la qualité des couches homoépitaxiales, d'un point de vue morphologique et structural. Les mécanismes d'incorporation de cette impureté ont été étudiés en fonctions des paramètres de croissance. Il a été montré que l'incorporation de cet élément peut être contrôlée dans la gamme 1x1016 - 7x1018 at.cm-3. De plus, cette incorporation de Ge s'accompagne d'une augmentation du dopage de type n. Les caractérisations électriques de ces couches montrent une amélioration de la mobilité et de la conductivité électrique du matériau 4H-SiC sans aucun impact négatif sur les caractéristiques de contact Schottky. Sur les substrats faiblement désorientés, GeH4 a été ajouté à la phase gazeuse uniquement pendant l'étape de préparation de la surface, c’est-à-dire avant d'initier la croissance de SiC. Il a été montré que des couches hétéroépitaxiales de 3C-SiC exemptes de macles peuvent être déposées dans une fenêtre de conditions expérimentales (température et flux de GeH4). Un mécanisme permettant l'élimination des macles a été proposé. Il implique une étape transitoire de croissance homoépitaxiale, favorisée par la présence de Ge liquide à la surface, suivie de la nucléation de 3C-SiC sur les larges terrasses résultant du facettage des marches. Ces couches de 3C-SiC ont été caractérisées électriquement par microscopie à force atomique en mode conduction / In this work, addition of GeH4 gas to the classical SiH4+C3H8 precursor system is reported for the epitaxial growth of SiC by chemical vapor deposition. The main objective of this fundamental study is to explore the influence of Ge presence within SiC lattice or at its surface on the overall growth mechanism and the grown layer quality and properties. Epitaxial growth was performed either on high off axis (8 and 4°) or low off-axis (1° and on-axis) 4H-SiC substrate in the temperature range 1450-1600°C. On high off-axis seeds, we discussed the impact of Ge atoms on the homoepitaxial layer quality from surface morphological and structural point of view. Ge incorporation mechanism in these layers as a function of growth parameters was also investigated. The Ge incorporation can be controlled from 1x1016 - 7x1018 at.cm-3. Moreover, a clear link between n-type doping and Ge incorporation was found. Electrical characterizations of these layers show an improvement of electron mobility and conductivity of 4H-SiC material while the performances of Schottky contacts were not negatively impacted. On low off-axis seeds, GeH4 was added to the gas phase only during the surface preparation step, i.e. before starting the SiC growth. It was found that there is a conditions window (temperature and GeH4 flux) for which heteroepitaxial 3C-SiC twin free layers can be grown. Interpretation of the results allowed proposing a mechanism leading to twin boundary elimination. It involves a transient homoepitaxial growth step, favored by the presence of liquid Ge at the surface, followed by 3C nucleation when large terraces are formed by step faceting. Electrical characteristics of the twin free 3C-SiC layers were studied using conductive atomic force microscopy (c-AFM)

Les composites SiC/SiC à interphase pyrocarbone (PyC) sont des candidats prometteurs en tant que matériau de gainage du combustible et de structure des réacteurs à neutrons rapides, constituant une alternative aux alliages métalliques. Leur comportement sous irradiation neutronique et leur caractère réfractaire sont de sérieux atouts en milieu irradiant. Néanmoins, les fibres et la matrice en carbure de silicium (SiC) sont, individuellement, des céramiques fragiles. L’intégrité des structures ne peut donc être assurée que si le composite acquiert une tolérance aux déformations. Cette tolérance n’est possible que grâce à la présence d’une interphase de pyrocarbone, entre la matrice et les fibres, assurant le rôle de déviateur de fissures. La capacité des composites SiC/SiC à résister à l’endommagement est dictée par le couplage fibre/matrice (F/M). L’intensité de ce couplage peut être influencée par de nombreux paramètres, tels que la rugosité et la physicochimie de surface du renfort. Les travaux faisant l’objet de cette thèse ont mis en évidence une couche de carbone en surface des fibres par microscopie électronique en transmission à haute résolution (METHR) et via des analyses physicochimiques de surface. Les caractéristiques de cette couche de carbone varient avec le procédé de fabrication des fibres. Son impact sur le couplage F/M a été appréhendé par l’observation des mécanismes locaux d’endommagement. La décohésion fibre/matrice a été étudiée en analysant par METHR les régions interfaciales des composites SiC/SiC ayant subi un essai mécanique. La compréhension de l’origine de cette couche de surface de fibres a permis de mieux connaitre les mécanismes locaux d’interaction. Ces mécanismes dépendent de la structure du carbone de surface des fibres dont découle le mode d’adhésion entre ce carbone de surface et l’interphase de pyrocarbone. Un traitement de surface sur un type de fibres a alors été développé, suggérant une légère amélioration du comportement mécanique des composites SiC/SiC élaborés à partir de ces renforts fibreux. / SiC/SiC composites including the third generation SiC fibers with pyrocarbon interphase (PyC) are promising candidates to improve the safety of nuclear reactors, especially for core materials such as cladding and to replace metallic alloys for these applications. Their intrinsic refractory properties, their neutron transparency and their microstructural stability when irradiated or exposed to high temperatures make them attractive for nuclear applications. However SiC fibers and SiC matrix are brittle ceramics. The integrity of the structures can be fulfilled only if the composite is damage tolerant and can acquire a pseudo-ductile mechanical behavior. An interphase is deposited between the fibers and the matrix to provide this damage tolerance of SiC/SiC composites.The ability of SiC/SiC composites to sustain damage is dictated by the fiber/matrix (F/M) coupling mode. The intensity of this coupling can be related to many parameters such as the roughness and the chemistry of the surface of the reinforcement. A carbon layer on the fiberssurface was highlighted by High Resolution Transmission Electronic Microscopy (HRTEM) and by physico-chemical analyses. The characteristics of this carbon layer vary with the fabrication process of the fibers. The impact of this carbon layer on the F/M coupling was investigated by the observation of the local damage mechanisms. To elucidate the local bonding modes governing the damage mechanisms at the F/M interface of these SiC/SiC composites, macroscopic mechanical tests have been coupled with observations of structural modifications occurring in the interface region after loading. Understanding the origin of this carbon layer allowed elucidating the local interaction mechanisms according to these studied materials. These mechanisms depend on the carbon structure of the SiC fibers surface which in turn governs the adhesion between this carbon and the PyC interphase. Thanks to this study, a surface treatment on fibers was developed to optimize the mechanical behavior of SiC/SiC composites, whatever the fibrous reinforcement chosen.