Global ETD Search

181	Nitrogen doping in low temperature halo-carbon homoepitaxial growth of 4H-silicon carbide Chindanon, Kritsa 13 December 2008 (has links) With the low-temperature halo-carbon epitaxial growth technique developed at MSU prior to this work, use of a halo-carbon growth precursor enabled low-temperature homoepitaxial process for 4H-SiC at temperatures below 1300 °C with good quality. Investigations of the nitrogen doping dependence are reported. It has been demonstrated that the efficiency of the nitrogen incorporation may be different for different substrate orientations, with the Cace showing the higher value of doping. The Si/C ratio is known to influence the doping during the epitaxial growth due to the site-competition mechanism. The doping on the Cace showed weak dependence on the Si/C ratio. On the Siace, the doping dependence follows the site-competition trend. At high Si/C ratio, the doping trend on Siace shows strong deviation. Both of the investigated trends are suggested for use as the main process dependencies for achieving a wide range of n type doping of SiC during the low-temperature halo-carbon homoepitaxial process. nitrogen silicon carbide halo-carbon epitaxial growth Chemical Vapor Deposition
182	Fatigue behavior and life prediction of a silicon carbide/titanium-24aluminum-11niobium composite under isothermal conditions Bartolotta, Paul Anthony January 1991 (has links) No description available. Fatigue behavior life prediction isothermal
183	TEM study of silicon carbide fibers Ning, Xian Jie January 1992 (has links) No description available. Engineering, Materials Science TEM study silicon carbide fibers
184	Silicon carbide: Problems in crystal growth and polytypic transformation Yang, Jinwei January 1993 (has links) No description available. Engineering, Materials Science Silicon carbide crystal growth polytypic transformation
185	Lattice defects in beta-silicon carbide grown on (001) silicon by CVD Cheng, Tai-Tsui January 1990 (has links) No description available. Engineering, Materials Science Beta-silicon carbide defects Chemical vapor deposit
186	SILICON CARBIDE MEMS OSCILLATOR Pehlivanoglu, Ibrahim Engin January 2008 (has links) No description available. MEMS silicon carbide resonator oscillator resonance micromachine harsh environment
187	THE MECHANICAL PROPERTIES OF AMORPHOUS SILICON CARBIDE FILMS DEPOSITED BY PECVD AND RF SPUTTERING FOR APPLICATION AS A STRUCTURAL LAYER IN MICROBRIDGE-BASED RF MEMS Parro, Rocco John, III 17 May 2010 (has links) No description available. Electrical Engineering Materials Science Silicon carbide PECVD Sputtering RF MEMS
188	SiC JFET Device Modeling Tian, David 19 September 2011 (has links) No description available. Electrical Engineering silicon carbide JFET device modeling high temperature
189	High Temperature Biomorphic Templates from Lignocellulosic Fibers Chen, Xue 22 September 2010 (has links) No description available. Chemical Engineering Biomorphic lignocellulosic silicon carbide fibers hexamethyldisilazane papermaking
190	Chemical and Behavioral Study of Commercial Polycarbosilanes for the Processing of SiC Fibers Potticary, Santeri A. January 2017 (has links) No description available. Materials Science SiC silicon carbide polycarbosilane fiber pyrolysis precursor

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