<p>As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. One disadvantage of the BJT compared with MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) is that the BJT requires a more complex drive circuit with higher power capability. For the SiC BJT to become competitive with field effect transistors, it is important to achieve high current gains to reduce the power required by the drive circuit. Although much progress in SiC BJTs has been made, SiC BJTs still have low common emitter current gain typically in the range 10-50. In this work, a record high current gain exceeding 60 has been demonstrated for a SiC BJT with a breakdown voltage of 1100 V. This result is attributed to an optimized device design, a stable device process and state-of-the-art epitaxial base and emitter layers.</p><p>A new technique to fabricate the extrinsic base using epitaxial regrowth of the extrinsic base layer was proposed. This technique allows fabrication of the highly doped region of the extrinsic base a few hundred nanometers from the intrinsic region. An important factor that made removal of the regrowth difficult was that epitaxial growth of very highly doped layers has a faster lateral than vertical growth rate and the thickness of the p+ layer therefore has a maximum close to the base-emitter sidewall. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain the low current gain.</p><p>Under high power operation, the SiC BJTs were strongly influenced by self-heating, which significantly limits the performance of device. The DC I-V characteristics of 4H-SiC BJTs have also been studied in the temperature range 25 °C to 300 °C. The DC current gain at 300 °C decreased 56 % compared to its value at 25 °C. Selfheating effects were quantified by extracting the junction temperature from DC measurements.</p><p>To form good ohmic contacts to both n-type and p-type SiC using the same metal is one important challenge for simplifying SiC Bipolar Junction Transistor (BJT) fabrication. Ohmic contact formation in the SiC BJT process was investigated using sputter deposition of titanium tungsten to both n-type and p-type followed by annealing at 950 oC. The contacts were characterized with linear transmission line method (LTLM) structures. The n+ emitter structure and the p+ base structure contact resistivity after 30 min annealing was 1.4 x 10-4 Ωcm2 and 3.7 x 10-4 Ωcm2, respectively. Results from high-resolution transmission electron microscopy (HRTEM), suggest that diffusion of Si and C atoms into the TiW layer and a reaction at the interface forming (Ti,W)C1-x are key factors for formation of ohmic contacts.</p>

Στην παρούσα διπλωματική εργασία διερευνάται η κατασκευαστική δομή και η λειτουργική συμπεριφορά ημιαγωγικών στοιχείων από καρβίδιο πυριτίου (SiC). Συγκεκριμένα, σε μια πρώτη φάση πραγματοποιείται διεξοδική βιβλιογραφική μελέτη των άρθρων που σχετίζονται με το ημιαγωγικό στοιχείο ισχύος SiC JFET και ειδικότερα η διερεύνηση των ιδιοτήτων του εκείνων που το καθιστούν ανώτερο σε σχέση με άλλα ημιαγωγικά στοιχεία ισχύος από πυρίτιο (Si) ή από SiC, για διακοπτικές εφαρμογές μεγάλης ισχύος και θερμοκρασιών, σύμφωνα με τις τρέχουσες τεχνολογικές εξελίξεις. Σε μια δεύτερη φάση, η διπλωματική εργασία αυτή πραγματεύεται την κατασκευή δύο μετατροπέων ανύψωσης τάσης τύπου boost: ο ένας κατασκευάζεται για βέλτιστη λειτουργία με συμβατικά ημιαγωγικά στοιχεία από πυρίτιο (Si MOSFET και Si pn δίοδος), ενώ ο δεύτερος είναι πανομοιότυπος με τον πρώτο με την ουσιαστική διαφορά ότι τα ημιαγωγικά στοιχεία που χρησιμοποιούνται είναι από καρβίδιο πυριτίου. Πιο συγκεκριμένα χρησιμοποιούνται ένα SiC JFET και μία SiC δίοδος Schottky. Η εργασία αυτή εκπονήθηκε στο Εργαστήριο Ηλεκτρομηχανικής Μετατροπής Ενέργειας του Τμήματος Ηλεκτρολόγων Μηχανικών και Τεχνολογίας Υπολογιστών της Πολυτεχνικής Σχολής του Πανεπιστημίου Πατρών. Αρχικά γίνεται μια μικρή εισαγωγή στις ιδιότητες του SiC ως υλικού προς χρήση για κατασκευή ημιαγωγικών στοιχείων ισχύος και συγκρίνεται με το Si. Επίσης εξάγονται οι λόγοι εκείνοι που, σύμφωνα με τη βιβλιογραφική μελέτη, καθιστούν το JFET ισχύος ως το καταλληλότερο για να κατασκευαστεί από SiC. Στη συνέχεια γίνεται εμβάθυνση στη λειτουργική συμπεριφορά του SiC JFET, δηλαδή μελετώνται τα φαινόμενα που λαμβάνουν χώρα κατά την αγωγή, την αποκοπή και τη μεταβατική του λειτουργία, όπως και η σημασία άλλων ιδιαιτεροτήτων της δομής του που επιδρούν σε αυτήν. Ακολούθως, αποτυπώνονται και μελετώνται 3 βασικές δομές SiC JFET, αναφέρονται τα χαρακτηριστικά τους και επισημαίνονται οι διαφορές τους. Έπειτα, γίνεται αναφορά στην ιδιαιτερότητα των SiC JFET να βρίσκονται σε κατάσταση αγωγής όταν δεν παλμοδοτούνται (normally-on), όπως και στους διακόπτες συνδεσμολογίας σε σειρά (cascode). Στη συνέχεια, καταγράφονται εφαρμογές ισχύος στις οποίες τα SiC JFET βρίσκουν χρήση. Το επόμενο βήμα είναι η κατασκευή των δύο μετατροπέων boost. Πιο συγκεκριμένα τίθενται οι συνθήκες λειτουργίας που καλούνται να εκπληρώσουν, διαστασιολογούνται τα παθητικά στοιχεία τους και σχεδιάζονται τα κυκλώματα ελέγχου και παλμοδότησης της πύλης. Τέλος, γίνονται μετρήσεις στους δύο μετατροπείς και λαμβάνονται αποτελέσματα που αφορούν τις απώλειες και το βαθμό απόδοσης, απ’ τα οποία εξάγονται χαρακτηριστικές καμπύλες για τον κάθε μετατροπέα. / In this diploma thesis, a bibliographical study of the Silicon Carbide (SiC) power JFET's operational behaviour is conducted. The SiC JFET exhibits such operational properties that help to establish it as an advanced power device, in comparison to other Silicon (Si) and SiC power devices. The SiC JFET is a favorable option for high voltage, high power and high temperature switching applications. Once the bibliographical part is conducted, the design and implementation of a 500 W dc/dc boost converter is discussed and analyzed, that employs a SiC VJFET and a SiC Schottky Barrier Diode (SBD. This converter is compared with an identical, more conventional boost converter that uses a Si MOSFET and a Si pn diode, in terms of efficiency and voltage step-up ratio.

Release of metallic fission products from fully intact tri-structural isotropic (TRISO) fuel particles raises serious concern on the safety of high temperature gas-cooled reactors (HTGRs). In TRISO particles, SiC and/or ZrC coating is considered as the major barrier for the migration of the fission products. This thesis focuses on the migration mechanism study of Ag in SiC and Pd in ZrC.The mechanism of the migration of Ag in SiC is a long-lasting mystery. None of the currently existing models could satisfactorily explain the reported experimental facts. In this work, a new mechanism, termed as the “reaction-recrystallization” model, is proposed to explain the Ag migration behavior through SiC. Designed SiC/Ag diffusion couple experiments were carried out, and the results indicate that Ag migrates in SiC by the following three steps. First, Ag reacts with SiC to form an Ag-Si alloy (reaction). Second, carbon precipitates as a second phase and subsequently reacts with the Ag-Si alloy to form new β-SiC (recrystallization). Third, the Ag-Si alloy penetrates through the SiC layer by wetting its grain boundaries (migration). The validity of the proposed model was supported by thermodynamic calculations. (Chapter 3) The finding that SiC could be recrystallized in the presence of Ag inspires the idea of Ag-assisted crack healing in SiC. Cracks were intentionally generated by indenting the bulk SiC by a Vickers indenter. After vacuum annealing with Ag powder, the indent impressions were healed by newly-formed β-SiC grains with a recovery ratio of~ 60%. Median cracks were fully healed by both newly formed SiC and Ag-Si nodules. TEM observation reveals that the newly formed β-SiC layer is presented between the Ag-Si nodule and pristine SiC crack surface and smooths the tortuous crack surface. The above result is in potential to solve the problem of brittleness of SiC as a structural material. (Chapter 4)ZrC is considered as a candidate to replace SiC in TRISO fuel particles. The migration behavior of Pd in ZrC was investigated by designed Pd/ZrC diffusion couple experiments. It is found that ZrC reacts with Pd at temperatures higher than 600 °C to form Pd3Zr and amorphous carbon. The reaction kinetics parameters, i.e., the activation energy and the reaction order, along with the inter-diffusion coefficients of Zr and Pd, were calculated based on established models. These results provide preliminary explanation to the Pd migration in ZrC (Chapter 5).

In modern high temperature nuclear reactors, silicon carbide (SiC) is used as the main diffusion barrier for the fission products in coated fuel spheres called TRISO particles. In the TRISO particle, pyrolytic carbon and SiC layers retain most of the important fission products like xenon, krypton and cesium effectively at temperatures up to 1000 oC. Previous studies have shown that 400 oC to 600 oC implantation of heavy ions into single crystal 6H-SiC causes the SiC to remain crystalline with many point defects and dislocation loops (damage). The release of Xe at annealing temperatures above 1400 oC is governed by the normal volume diffusion without any hindrance of trapping effects. In this study two phenomena in single crystal 6H-SiC implanted by 360 keV Xenon ions were studied using Rutherford Backscattering Spectroscopy (RBS) and channeling. Radiation damage and its annealing behavior at annealing temperatures ranging from 1000 oC to 1500 oC, and the diffusion of xenon in 6H-SiC at these annealing temperatures were investigated. 360keV xenon ions were implanted into a single crystalline wafer (6H-SiC) at 600 oC with a fluence of 1 × 1016 cm-2. The sample was vacuum annealed in a computer control Webb 77 graphite furnace. Depth profiles were obtained by Rutherford backscattering spectrometry (RBS). The same set-up was used to investigate radiation damage of the 6H-SiC sample by channeling spectroscopy. Isochronal annealing was performed at temperatures ranging from 1000 to 1500 °C in steps of 100 oC for 5 hours. Channeling revealed that the 6H-SiC sample retained most of its crystal structure when xenon was implanted at 600 °C. Annealing of the radiation damage took place when the sample was heat treated at temperatures ranging from 1000 oC to 1500 oC. The damage peak almost disappears at 1500 oC but the virgin spectrum was not achieved. This happened because of dechanneling due to extended defects like dislocations remaining in the implanted region. RBS profiles showed that no diffusion of the Xe occurred when the sample was annealed at temperatures from 1000 oC to 1400 oC. A slight shift of the xenon peak position towards the surface after annealing at 1400 °C was observed for 600 oC implantation. After annealing at 1500o C, a shift toward the surface accompanied by a broadening of the Xe peak indicating that diffusion took place. This diffusion was not accompanied by a loss of xenon from the SiC surface. The shift towards the surface is due to thermal etching of the SiC at 1400-1500 °C. Modern high temperature gas-cooled reactors operate at temperatures above 600 oC in the range of 750 oC to 950 oC. Consequently, our results indicate that the volume diffusion of Xenon in SiC is not significant in SiC coated fuel particles. / Dissertation (MSc)--University of Pretoria, 2014. / gm2014 / Physics / unrestricted

Philosophiae Doctor - PhD / The framework agreement in the year 2000 by the international community to launch Generation IV program with 10 nations, to develop safe and reliable nuclear reactors gave rise to the increased interest in the studies of SiC and the effect of different irradiations on solids. Silicon carbide is a preferred candidate used in harsh environments due to its excellent properties such as high chemical stability and strong mechanical strength. The PBMR technology promises to be the safest of all nuclear technology that have been developed before. SiC has been considered one candidate material being used in the fabrication of pebble bed fuel cell. Its outstanding physical and chemical properties even at high temperatures render it a material of choice for the future nuclear industry as whole and PBMR in particular. Due to the hostile environment created during the normal reactor operation, some of these excellent properties are compromised. In order to use this material in such conditions, it should have at least a near perfect crystal lattice to prevent defects that could compromise its strength and performance. A proper knowledge of the behavior of radiation-induced defects in SiC is vital. During irradiation, a disordered crystal lattice occurs, resulting in the production of defects in the lattice. These defects lead to the degradation of these excellent properties of a particular material. This thesis investigates the effects of various radiation effects to 6H-SiC. We have investigated the effects of radiation induced damages to SiC, with a description of the beds and the importance of the stability of the SiC-C interface upon the effects of radiations (y-rays, hot neutrons). The irradiated samples of 6H-SiC have been studied with various spectroscopic and structural characterization methods. The surface sensitive techniques such as Raman spectroscopy, UV-Vis, Photoluminescence and Atomic Force Microscopy will be employed in several complimentary ways to probe the effect of irradiation on SiC. The obtained results are discussed in details.

In this thesis, growth of ZrB2 thin films by direct current magnetron sputtering is investigatedusing a high vacuum industrial scale deposition system and an ultra-high vacuum laboratory scalesystem. The films were grown from ZrB2 compound targets at temperatures ranging from ambient (without external heating) to 900 °C and with substrate biases from -20 to -120 V. Short deposition times of typically 100 or 300 s and high growth rates of 80-180 nm/min were emphasized to yield films with thicknesses of 300-400 nm. The films were characterized by thinfilm X-ray diffraction with the techniques θ/2θ and ω scans, pole figure measurements andreciprocal space mapping, scanning and transmission electron microscopy, elastic recoil detection analysis and four point probe measurements. The substrates applied were Si(100), Si(111),4H-SiC(0001) and GaN(0001) epilayers grown on 4H-SiC. The Si(111), 4H-SiC(0001) substrates and GaN(0001) epilayers were chosen given their small lattice mismatches to ZrB2 making them suitable for epitaxial growth.The films deposited in the industrial system were found to be close to stoichiometric with a low degree of contaminants, with O being the most abundant at a level of &lt; 1 at.%. Furthermore, the structure of the films is temperature dependent as films deposited in this system without external heating are fiber textured with a 0001-orientation while the films deposited at 550 °C exhibitrandom orientation. In contrast, epitaxial growth was demonstrated in the laboratory scale system on etched 4H-SiC(0001) and Si(111) deposited at 900 °C following outgassing of the substrates at 300 °C and in-situ heat treatment at the applied growth temperature to remove the native oxides. However, films grown on GaN(0001) were found to be 0001 textured at the applied deposition conditions, which make further studies necessary to enable epitaxial growth on this substrate material. Four point probe measurements on the films deposited in the industrial system show typical resistivity values ranging from ˜95 to 200 μΩcm with a trend to lower values for the films deposited at higher temperatures and at higher substrate bias voltages.

With GaN and SiC switching devices becoming more commercially available, higher switching frequency is being applied to achieve higher efficiency and power density in power converters. However, electro-magnetic interference (EMI) becomes a more severe problem as a result. In this thesis, the switching frequency effect on conducted EMI noise is assessed. As EMI noise increases, the EMI filter plays a more important role in a power converter. As a result, an effective EMI modeling technique of the power converter system is required in order to find an optimized size and effective EMI filter. The frequency-domain model is verified to be an efficient and easy model to explore the EMI noise generation and propagation in the system. Of the various models, the unterminated behavioral model can simultaneously predict CM input and output noise of an inverter, and the prediction falls in line with the measurement around 10 MHz or higher. The DM terminated behavioral model can predict the DM input or output noise of the motor drive higher than 20 MHz. These two models are easy to extract and have high prediction capabilities; this is verified on a 10 kHz-switching-frequency Si motor drive. It is worthwhile to explore the prediction capability of the two models when they are applied to a SiC-based power inverter with switching frequency ranges from 20 kHz to 70 kHz. In this thesis, the CM unterminated behavioral model is first applied to the SiC power inverter, and results show that the model prediction capability is limited by the noise floor of the oscilloscope measurement. The proposed segmented-frequency-range measurement is developed and verified to be a good solution to the noise floor. With the improved impedance fixtures, the prediction from CM model matches the measurement to 30 MHz. To predict the DM input and output noise of the SiC inverter, the DM terminated behavioral model can be used under the condition that the CM and DM noise are decoupled. With the system noise analysis, the DM output side is verified to be independent of the CM noise and input side. The DM terminated behavioral model is extracted at the inverter output and predicts the DM output noise up to 30 MHz after solving the noise floor and DM choke saturation problem. At the DM input side, the CM and DM are seen to be coupled with each other. It is found experimentally that the mixture of the CM and DM noise results from the asymmetric impedance of the system. The mixed mode terminated behavioral model is proposed to predict the DM noise when a mixed CM effect exists. The model can capture the DM noise up to to 30 MHz when the impedance between the inverter to CM ground is not balanced. The issue often happens in extraction of the model impedance and is solved by the curving-fitting optimization described in the thesis. This thesis ends with a summary of contributions, limitations, and some future research directions. / Master of Science

Nanostructured ferritic alloy and silicon carbide composite materials (NFA-SiC) were sintered with spark plasma sintering (SPS) method and systematically investigated through X-ray diffraction (XRD), scanning electron microscopy (SEM), as well as density and Vickers hardness tests. Pure NFA, pure SiC, and their composites NFA-SiC with different compositions (2.5 vol% NFA-97.5 vol% SiC, 5 vol% NFA-95 vol% SiC, 97.5 vol% NFA-2.5 vol% SiC, and 95 vol% NFA-5 vol% SiC) were successfully sintered through SPS. In the high-NFA samples, pure NFA and NFA-SiC, minor gamma-Fe phase formation from the main alfa-Fe matrix occurred in pure NFA 950 degree C and 1000 degree C. The densities of the pure NFA and NFA-SiC composites increased with sintering temperature but decreased with SiC content. The Vickers hardness of the pure NFA and NFA-SiC composites was related to density and phase composition. In the high-SiC samples, NFA addition of 2.5 vol% can achieve full densification for the NFA-SiC samples at relative low temperatures. With the increase in sintering temperature, the Vickers hardness of the pure SiC and NFA-SiC composite samples were enhanced. However, the NFA-SiC composites had relative lower hardness than the pure SiC samples. A carbon layer was introduced in the NFA particles to prevent the reaction between NFA and SiC. Results indicated that the carbon layer was effective up to 1050 degree C sintering temperature. Green samples of gradient-structured NFA-SiC composites were successfully fabricated through slip casting of an NFA-SiC co-suspension. / Master of Science

Silicon carbide (SiC) power switching devices promise to be a major breakthrough for new generation ac three-phase power converters, offering increased junction temperature, low specific on-resistance, fast switching, and low switching loss. These characteristics are desirable for increasing power density, providing faster system dynamics, and improving power quality. At present, the normally-on SiC JFET prototypes available from SiCED are the first SiC power switches close to commercialization. The objective of this work is to characterize the switching behavior of the prototype SiC JFET devices, as well as demonstrate the feasibility of achieving high switching frequency for a 2 kVA three-phase converter. The switching characterization of the 1200 V SiC JFET prototypes is shown for a wide range of operating conditions such as switched voltage, switched current, and junction temperature. The SiC JFET is shown to be a fast-switching, low-loss device offering performance benefits compared to traditional silicon (Si) power devices of similar ratings. Utilizing the SiC JFET, a three-phase ac buck rectifier is then demonstrated with a 150 kHz switching frequency and a rated power of 2 kVA. Additionally, improvements are made to the charge control scheme for the buck rectifier allowing power factor compensation and reduction of input current transients. / Master of Science

Wear resistant surfaces with high toughness and impact resistant properties are to be created to improve the life cycle cost of brake discs for trains. A potential solution to this industrial problem is to use an arc cladding process. This work describes the application of gas tungsten arc welding (GTAW) for a structural ceramic Metal Matrix Composite (MMC) on steel. The structure of the two ceramics examined indicates the possibility of development of a wear resistant surface, which would extend the life of the brake disc. Silicon Carbide (SiC) and Tungsten Carbide (WC) ceramics were studied to embed them in a steel matrix by an advanced GTAW method. WC particles penetrated the liquid weld pool and also partially dissolved in the steel matrix, whereas, SiC because of the physical properties never penetrated deeper into the weld pool but segregated on the surface. Successful embedding and bonding of WC led to the decision to exercise an in-depth analysis of the bonding between the WC particles and the matrix. Chemical analysis of the matrix revealed more WC dissolution as compared to particle form within the clad. It was observed that WC reinforcement particles built a strong chemical bond with the steel matrix. This was shown by electron backscatter diffraction (EBSD) analysis. The hard clad layer composed of WC reinforced steel matrix gave an matching friction coefficient to high-strength steel in cold wear conditions through Pin-on-Disc wear and friction testing. A prototype railway brake disc was created with the established GTAW parameters to find out the difficulties of producing industrial scale components.