Thermoelectricity can directly convert a temperature difference into a voltage or charge current. Recently, the development of spin caloritronics has introduced spin as another degree of freedom in traditional thermoelectrics. This discovery bodes a new generation of magnetic random access memories (MRAMs), where thermal spin-transfer torque (TSTT) rather than voltage driven spin-transfer torque (STT) is used to switch the magnetization in magnetic tunnel junctions (MTJs). To advance the rising trend of spin caloritronics, the coupling of charge, spin, and heat flow during electron transport in MTJs was systematically studied in this thesis. To begin with, the static transport properties of MTJs were studied by observing current dependent tunnel magnetic resistance (TMR). The observed decrease of TMR with a biased current is attributed to the change in spin polarization of the free ferromagnetic layer. A phenomenological model has been built based on the current dependent polarization, which agrees with our experimental results. Next, the Seebeck rectification effect in MTJs was studied. By applying microwave currents to MTJs, an intrinsic thermoelectric coupling effect in the linear response regime of MTJs was discovered. This intrinsic thermoelectric coupling contributes a nonlinear correction to Ohm's law. In addition, this effect can be controlled magnetically since the Seebeck coefficient is related to magnetization configuration. Finally, TSTT in MTJs was systematically studied. A laser heating technique was employed to apply a temperature difference across the tunnel barrier and ferromagnetic resonance (FMR) spectra were measured electrically through spin rectification. By analyzing the FMR spectra, TSTT in MTJs was observed and the angular dependence of TSTT was found to be different from dc-biased STT. By solving the Landau-Lifshitz-Gilbert equation including STT, the experimental observations were well explained. The discovery of Seebeck rectification refines the previous understanding of magneto-transport and microwave rectification in MTJs and provides a new possibility for utilizing spin caloritronics in high-frequency applications. The study of TSTT in MTJs shows clear experimental evidence of TSTT in MTJs. Further optimization of the design of MTJs may succeed in decreasing the necessary switching fields strength or even achieve a switching by only TSTT in MTJs. / February 2017

<p>Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spin-dependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied.  By using the optical orientation photoluminescence (PL) technique, GaNAs is shown to be able to spin filter electrons injected from GaAs, which is a useful functional property for integratition with future electronic devices.  The spin filtering ability is found to degrade in narrow GaNAs quantum well (QW) structures which is attributed to (i) acceleration of band-to-band recombination competing with the SDR process and to (ii) faster electron spin relaxation in the narrow QWs.  Ga interstitial-related defect centers have been found to be responsible for the SDR process by using the optically detected magnetic resonance (ODMR) technique. The defects are found to be the dominant grown-in defects in GaNAs, commonly formed during both MBE and MOCVD growths.  Methods to control the concentration of the Ga interstitials by varying doping, growth parameters and post-growth treatments are also examined.</p>

This dissertation describes the theoretic studies of magnetic moment and spinorbit interaction in vacuum (Dirac wavepacket) and solid state systems, such as semiconductors. The semiclassical approach developed here provides a simple and intuitive picture for the origin of spin and spin-orbit coupling. In the Dirac model, the spin magnetic moment is originated from the self-rotating Dirac wavepacket with a correct g-value. The spin-orbit interaction is related to Berry connection (gauge potential) and the model is generalized to solid state systems. The Rashba effect caused by the spin-orbit coupling in a crystal with asymmetric potential in heterostructure quantum well is calculated by semiclassical spindependent scattering. The exact treatment of interface phase accumulation provides a justification of spin-dependent boundary condition at interface derived in previous treatment using Löwdin decomposition. Other spin-orbit coupling related phenomena in solid state system are also discussed in this thesis. / text

In this thesis we present three different aspects of spin and spin-dependent transport properties in novel materials. Spurred by the prospect of spintronic devices, which use the spin degree of freedom of electrons instead of, or combined with, the charge degree of freedom, we analyse the spin properties of quantum wires, organic conducting polymers and sheets of graphene. First, we examine a quantum wire that is embedded in a two dimensional electron gas. We consider the Rashba spin-orbit coupling, and include the effect of interaction between the conduction electrons. We construct an analytically solvable low-energy theory for the wire, and explore the interaction between two magnetic impurities in the wire. We find that both the spin-orbit coupling and the electron-electron interaction have an effect on the magnetic interaction, and find the magnetic interaction to be tunable by an electric field. Next, we study an organic conducting polymer, which is contacted to magnetised ferromagnetic leads. In semiconducting organic polymers the current is transported by spinful polarons and spinless bipolarons. We simulate the transport through the system, including both types of charge carriers, and find the current to be insensitive to the presence of bipolarons. In addition, we find the bipolaron density to depend on the relative magnetisation of the ferromagnetic contacts. This constitutes an optical way of measuring the spin accumulation in conducting polymers. Finally, we investigate the optical conductivity of graphene. Symmetry arguments indicate the existence of two kinds of spin-orbit coupling in the two dimensional lattice, but there is no consensus about the actual strength of these couplings. We calculated the microwave optical conductivity of graphene including both possible spin-orbit interactions. We find the low frequency dependence of the optical conductivity to have a unique imprint of the spin-orbit couplings. This opens a possibility to experimentally determine both couplings separately.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第24904号 / 工博第5184号 / 新制||工||1990(附属図書館) / 京都大学大学院工学研究科分子工学専攻 / (主査)教授 関 修平, 准教授 須田 理行, 教授 生越 友樹, 教授 水落 憲和 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.

Nesta dissertação, fazemos a primeira investigação sobre flutuações em corrente e corrente média dependentes de spin em potenciais duplo e simples da estrutura Zn1-xMnxSe. Consideramos efeitos de campos magnético e elétrico externos à temperatura nula. Na presença de um campo magnético, a interação dos íons de Mn com elétrons de condução e valência (interação de troca sp-d) origina potenciais dependentes de spin para o transporte em Zn1-xMnxSe. Aqui, flutuações em corrente (\"shot noise\") e a corrente média são calculados usando o modelo quântico de transporte através do potencial dependente de spin é descrito por uma matriz s de espalhamento. Os elementos da matriz de espalhamento, i.e., as amplitudes de transmissão e reflexão, são determinados pelo método da matriz transferência. Nossos resultados indicam que estruturas de potenciais simples e duplos Zn1-xMnxSe agem como se fossem \"filtros de spin\" para corrente. Em determinadas faixas de parâmetros do sistema, \"shot noise\" pode complementar informações obtidas da corrente média / In this dissertation we investigation for the first time spin dependent-current and its fluctuations in double and single barrier potentials of the Zn1-xMn xSe structure sandwiched between ZnSe layers. We consider effects of external magnetic field, the interaction of the Mn ions with thew conduction and valence electrons (sp-d exchange interation) give rises to spin-dependent potentials for transport across the Zn1-xMn xSe layer. Here, the average current and its fluctuations are calculated using the quantum transport model in which transport across the spin-dependent potential is described via scattering matrix s. The elements of the scattering matrix, i.e., the transmission and reflection amplitudes, are determined through the transfer-matrix method. Our results indicate date single and double potentials of the Zn1-xMn xSe structure act as \"spin filters\" for the current. Within some system parameter range, shot noise can supplement the information contained in the average current

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Nesta dissertação, fazemos a primeira investigação sobre flutuações em corrente e corrente média dependentes de spin em potenciais duplo e simples da estrutura Zn1-xMnxSe. Consideramos efeitos de campos magnético e elétrico externos à temperatura nula. Na presença de um campo magnético, a interação dos íons de Mn com elétrons de condução e valência (interação de troca sp-d) origina potenciais dependentes de spin para o transporte em Zn1-xMnxSe. Aqui, flutuações em corrente (\"shot noise\") e a corrente média são calculados usando o modelo quântico de transporte através do potencial dependente de spin é descrito por uma matriz s de espalhamento. Os elementos da matriz de espalhamento, i.e., as amplitudes de transmissão e reflexão, são determinados pelo método da matriz transferência. Nossos resultados indicam que estruturas de potenciais simples e duplos Zn1-xMnxSe agem como se fossem \"filtros de spin\" para corrente. Em determinadas faixas de parâmetros do sistema, \"shot noise\" pode complementar informações obtidas da corrente média / In this dissertation we investigation for the first time spin dependent-current and its fluctuations in double and single barrier potentials of the Zn1-xMn xSe structure sandwiched between ZnSe layers. We consider effects of external magnetic field, the interaction of the Mn ions with thew conduction and valence electrons (sp-d exchange interation) give rises to spin-dependent potentials for transport across the Zn1-xMn xSe layer. Here, the average current and its fluctuations are calculated using the quantum transport model in which transport across the spin-dependent potential is described via scattering matrix s. The elements of the scattering matrix, i.e., the transmission and reflection amplitudes, are determined through the transfer-matrix method. Our results indicate date single and double potentials of the Zn1-xMn xSe structure act as \"spin filters\" for the current. Within some system parameter range, shot noise can supplement the information contained in the average current

京都大学 / 新制・課程博士 / 博士(工学) / 甲第23512号 / 工博第4924号 / 新制||工||1769(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 山田 啓文, 教授 引原 隆士 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DGAM