<p>Quasicrystals is a new kind of material that have several interesting aspects to it. The unusual atomic structure entails many anomalous and unique physical properties, for example, high hardness, and extremely low electrical and thermal conductivity. In thin films quasicrystals would enable new functional materials with a combination of attractive properties.In this work, AlCuFe and Nanoflex steel, materials that are known to form quasicrystals in bulk, have been deposited as thin films on Si and Al2O3 substrates using DC magnetron sputtering. These thin films were heat treated, and the formation and growth of different phases, among other approximant and quasicrystalline phases, were studied using mainly in-situ X-ray diffraction.During the project several problems with the formation of quasicrystals were encountered, and it is proposed how to overcome these problems, or even how to make use of them. Finally, the quasicrystalline phase was realized, although it was not completely pure. In the end some suggestions for future work is presented.</p>

Les objectifs de ce travail sont la réalisation de revêtements et de couches minces de Ti2AlN (phase de Hägg ou phase MAX 211). Ces composés ternaires allient les meilleures propriétés des céramiques et des métaux. Nous avons mis en œuvre trois approches expérimentales pour synthétiser ce matériau. Nous avons tout d'abord réalisé des multicouches TiAl/TiN par pulvérisation ionique. Après recuit à 600°C, nous avons pu mettre en évidence la formation de super-réseaux (Ti,Al)N/Ti2AlN. Les caractérisations structurales et chimiques (DRX, MET, HRMET, EELS, XPS) ont permis de montrer que la présence d'azote dans les couches de TiAl avant recuit est responsable de la formation ultérieure de la phase MAX. Le recuit s'accompagne d'une diffusion de l'aluminium en excès vers les couches de TiN. Dans une seconde approche, nous avons élaboré des revêtements de Ti2AlN par nitruration plasma à haute température d'alliages TiAl massifs ou en couches minces. Nous avons montré qu'il y avait formation d'un revêtement polycristallins de Ti2AlN dont la taille de grains est limitée par la diffusion. Enfin, nous avons entrepris la réalisation de couches minces de TiN épitaxiées sur MgO par pulvérisation cathodique magnétron réactive. Cette dernière s'est poursuivie par la recherche des paramètres de dépôt permettant la synthèse de Ti2AlN. Pour le jeu de paramètres de dépôt exploré, seules ont été formées les phases cubiques (Ti,Al)N et Ti3AlN. Il semble que, du fait de sa faible cinétique de croissance, les fenêtres de variation des paramètres de dépôt conduisant à la nucléation et à la croissance de la phase MAX sont relativement étroites.

Detectors and sensors are an integral part of modern electronics and are crucial to highly sensitive applications. Metal-Insulator-Metal (MIM) tunnel junctions have been explored for the past five decades and are still being investigated due to its wide use of applications such as mixers, capacitors, detectors, rectifiers and energy conversion devices. In this research, various designs of thin film based tunnel junctions have been investigated and the optimum one picked for the purpose of a wide band detector up to 10GHz based on their sensitivities. A modified design with an isolation layer incorporating a self-aligning method to increase fabrication throughput was developed. A mask for the reliability testing of multiple devices with different areas was also developed. Nickel Oxide based insulators with different stoichiometries have been incorporated in the fabrication of the device to identify which stoichiometry gives the best performance for high frequency applications. Nickel Oxide (NiO), Zinc Oxide (ZnO) and the combination of the two have been deposited using reactive sputtering and investigated as insulator materials. The bilayer devices showed increased sensitivities at lower turn on voltages and very good efficiencies at 100MHz and 1GHz. Although, the MIM device provides a simple structure, some of the critical parameters required to quantify the device functionality are still being explored. Based on the parameters, a criterion was developed to help engineer a tunnel device for a desired detectivity.

No description available.

We investigated thin film samples of Mg2NiH4 with two intentions. First of all, we wanted to ascertain if the same nanomaterial (Mg2NiH4) prepared by magnetron sputtering and ball milling can exhibit different hydrogen storage properties and to see possible advantages/disadvantages of employing of magnetron sputtering for synthesis of nanometerials for hydrogenstorage. Furthermore, we wanted to see if thin film samples of Mg2NiH4 could be used in a switchable mirror or window device by utilizing the high to low temperature transition at about 510 K. In powder samples, this transition, between a monoclinic conducting low temperature phase to an FCC non-conducting high temperature phase, have been demonstrated in a mechanical reversible conductor–insulator transition [Blomqvist and Nor��us, J. Appl. Phys 91(2002)5141]. The new thin film Mg2NiH4 samples were produced by reacting hydrogen with magnetron sputtered Mg2Ni films on quartz glass or CaF2 substrates. But we could not obtain the monoclinic low temperature phase upon cooling the samples. Instead a cubic phase, related but not identical to the cubic high temperature phase, was formed at temperatures both below and above 510 K. TEM pictures revealed the new cubic phase in the films to have the same cell parameter as the FCC high temperature phase. But the symmetry was lower with similar streaking patterns as observed for the monoclinic low temperature phase. IR-spectroscopy indicated an identical vibrational frequency for... [to full text] / Tiriamojo darbo metu magnetroniniu garinimu suformuotos Mg-Ni dangos, kurios hidrintos esant aukštai temperatūrai ir vandenilio slėgiui. Hidrintos dangos ištirtos įvairiais analizės metodais, siekiant nustatyti magnetronio garinimo būdu suformuotos medžiagos (magnio nikelio hidrido) skirtumus nuo rutulinio trynimo metodu gautos analogiškos medžiagos. Darbe išanalizuoti duomenys ir pateiktas aiškinamasis modelis, kuris atskleidžia plonų dangų ypatybes, dėl kurių dangose pilnai neįvyksta dangos relaksacijos procesai. Nustatyta, kad dėl tų pačių priežasčių, dangų panaudojimo „įjungiamiesiems veidrodžiams“ galimybės yra ribotos.

In this thesis research on synthesis, microstructure and properties of carbide-based coatings is reported. These coatings are electrically conducting, and can be tailored for high hardness, low friction and wear, along with load-adaptive behaviour. Tailoring these properties is achieved by controlling the relative phase content of the material. Coatings have been synthesised by dc magnetron sputtering, and their structures have been characterised, mainly by X-ray photoelectron spectroscopy and X-ray diffraction. It has been shown that nanocomposites comprising of a nanocrystalline transition metal carbide (nc-MeCx, Me = Ti, Nb or V) and an amorphous carbon (a-C) matrix can result in low contact resistance in electrical contacts. Such materials also exhibit low friction and high resistance to wear, making them especially suitable for application in sliding contacts. The lowest contact resistance is attained for small amounts of the amorphous carbon phase. It has been shown that specific bonding structures are present in the interface between nc-TiCx and the a-C phases in the nanocomposite.  It was found in particular that Ti3d and C2p states are involved, and that considerable charge transfer occurs across the interface, thereby influencing the structure of the carbide. Further design possibilities were demonstrated for TiCx-based nanocomposites by alloying them with weakly carbide-forming metals, i.e., Me = Ni, Cu or Pt.  Metastable supersaturated solid solution carbides, (T1-xMex)Cy, were identified to result from this alloying process. The destabilisation of the TiCx-phase leads to changes in the phase distribution in the deposited nanocomposites, thus providing further control over the amount of carbon phase formed. Additional design possibilities became available through the decomposition of the metastable (Ti1-xMex)Cy phase through an appropriate choice of annealing conditions, yielding either more carbon phase or a new metallic phase involving Me. This alloying concept was also studied theoretically for all 3d transition metals using DFT techniques. It has also been demonstrated that Ar-ion etching (commonly used in the analysis of carbide based nanocomposites) can seriously influence the result of the analysis, especially for materials containing metastable phases. This implies that more sophisticated methods, or considerable care are needed in making these analyses, and that many of the earlier published results could well be in error.

<p>The fascinating optical properties of metallic nanostructures, dominated by collective oscillations of free electrons known as plasmons, open new opportunities for the development of devices fabrication based on noble metal nanoparticle composite materials. This thesis demonstrates a low-cost and versatile technique to produce stimuli-responsive ultrafast plasmonic nanostructures with reversible tunable optical properties. Albeit challenging, further control using thermal external stimuli to tune the local environment of gold nanoparticles embedded in VO2 host matrix would be ideal for the design of responsive functional nanocomposites. We prepared Au-VO2 nanocomposite thin films by the inverted cylindrical reactive magnetron sputtering (ICMS) known as hollow cathode magnetron sputtering for the first time and report the reversible tuning of surface plasmon resonance of Au nanoparticles by only adjusting the external temperature stimuli. The structural, morphological, interfacial analysis and optical properties of the optimized nanostructures have been studied. ICMS has been attracting much attention for its enclosed geometry and its ability to deposit on large area, uniform coating of smart nanocomposites at high deposition rate. Before achieving the aforementioned goals, a systematic study and optimization process of VO2 host matrix has been done by studying the influence of deposition parameters on the structural, morphological and optical switching properties of VO2 thin films. A reversible thermal tunability of the optical/dielectric constants of VO2 thin films by spectroscopic ellipsometry has been intensively also studied in order to bring more insights about the shift of the plasmon of gold nanoparticles imbedded in VO2 host matrix.</p>

No description available.

Heterojunctions of n-ZnO/p-Si solar cells were fabricated by RF sputtering ZnO:Al onto boron-doped (100) silicon (Si) substrates. Zinc Oxide (ZnO) films were also deposited onto soda lime glass for electrical measurements. Sheet resistance measurements were performed with a four-point-probe on the glass samples. Values for samples evacuated for 14 hours prior to deposition increased from 7.9 to 10.17 and 11.5 O/&squ; for 40 W, 120 and 160 W in RF power respectively. In contrast, those evacuated for 2 hours started with a higher value of 22.5 O/&squ;, and decreased down to 7.6 and 5.8 O/&squ;. Vacuum annealing was performed for both the glass and the Si samples. Current-voltage measurements were performed on the ZnO/Si junctions in the dark and under illumination. Parameters such as open-circuit voltage, Voc; short-circuit current, Isc; fill factor, FF; and efficiency, eta were determined. A maximum efficiency of 0.25% among all samples was produced, with an I sc of 2.16 mA, Voc of 0.31V and a FF of 0.37. This was a sample fabricated at an RF power of 80 W. Efficiency was found to decline with vacuum annealing. Furthermore, interfacial state density calculated based on capacitance-voltage measurements showed an increase in the value with vacuum annealing. The results found suggest that the interface states may be due to an interdiffusion of atoms, possibly those of Zn into the Si surface. The Electron Beam Induced Current (EBIC) method was used to determine diffusion length to be at a value &sim;40--80 mum and therefore a minority carrier lifetime calculated of 3 musec. It was also used to determine the surface recombination velocity (SRV) of the fractured surface of the Si bulk from the fabricated solar cells. An SRV of &sim;500 cm/sec was determined from the fractured Si surface, at a point located at 30 and 20 mum away from the junction interface.

In the present study, the effect of S and Se substitution on structural, electrical and optical properties of AgGa(Se2-xSx) thin films has been investigated. AgGa(Se0.5S0.5 )2 thin films were prepared by using the thermal evaporation method. X-ray diffraction (XRD) analysis has revealed that the transformation from amorphous to polycrystalline structure took place at about 450 oC. The detailed information about the stoichometry and the segregation mechanisms of the constituent elements in the structure has been obtained by performing both energy dispersive X-ray analysis (EDXA) and X-ray photoelectron spectroscopy (XPS) measurements. AgGaSe2 thin films were deposited by using both electron-beam (e-beam) and sputtering techniques. In e-beam evaporated thin films, the effect of annealing on the structural and morphological properties of the deposited films has been studied by means of XRD, XPS, scanning electron microscopy (SEM) and EDXA measurements. Structural analysis has shown that samples annealed between 300 and 600 oC were in polycrystalline structure with co-existance of Ag, Ga2Se3, GaSe, and AgGaSe2. The variation of surface morphology, chemical composition and bonding nature of constituent elements on post-annealing has been determined by EDXA and XPS analyses. AgGaSe2 thin films were also prepared by using sputtering technique. XRD measurements have shown that the mono-phase AgGaSe2 structure is formed at annealing temperature of 600 oC. The crystal-field and spin-orbit splitting levels were resolved. These levels around 2.03 and 2.30 eV were also detected from the photospectral response measurements. Thin films of Ag-Ga-S (AGS) compound were prepared by using AgGaS2 single crystalline powder and deposition of the excess silver (Ag) intralayer with double source thermal evaporation method. As a consequence of systematic optimization of thickness of Ag layer, Ag(Ga,S) with the stoichiometry of AgGa5S8 and AgGaS2 were obtained and systematic study to obtain structural, electrical and optical properties was carried out.