The L10 FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L10 phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt - L10 self-organized isolated nanoislands towards an increase of the signal-to-noise ratio. In this study, dc magnetron sputtered FePt thin films on amorphous substrates were inve-stigated. The work is focalized on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (co-sputtering vs. layer – by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3 - 3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320 +/- 20)°C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L10 - FePt films were obtained on a-SiO2 after vacuum annealing. L10 - FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa). The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects. An extensive study with different synchrotron X-ray scattering techniques, mainly performed at the ESRF, BM-20 (ROBL-Beamline), pointed out the importance of in-situ investigations to clearly understand the kinetic mechanism of the A1 to L10 transition and ordering and to control FePt nanoclusters evolution.

The formation of Ge nanowires in V-grooves has been studied experimentally as well as theoretically. As substrate oxide covered Si V-grooves were used formed by anisotropic etching of (001)Si wafers and subsequent oxidation of their surface. Implantation of 1E17 Ge+ cm^-2 at 70 keV was carried out into the oxide layer covering the V-grooves. Ion irradiation induces shape changes of the V-grooves, which are captured in a novel continuum model of surface evolution. It describes theoretically the effects of sputtering, redeposition of sputtered atoms, and swelling. Thereby, the time evolution of the target surface is determined by a nonlinear integro-differential equation, which was solved numerically for the V-groove geometry. A very good agreement is achieved for the predicted surface shape and the shape observed in XTEM images. Surprisingly, the model predicts material (Si, O, Ge) transport into the V-groove bottom which also suggests an Ge accumulation there proven by STEM-EDX investigations. In this Ge rich bottom region, subsequent annealing in N2 atmosphere results in the formation of a nanowire by coalescence of Ge precipitates shown by XTEM images. The process of phase separation during the nanowire growth was studied by means of kinetic 3D lattice Monte-Carlo simulations. These simulations also indicate the disintegration of continuous wires into droplets mediated by thermal fluctuations. Energy considerations have identified a fragmentation threshold and a lower boundary for the droplet radii which were confirmed by the Monte Carlo simulation. The here given results indicate the possibility of achieving nanowires being several nanometers wide by further growth optimizations as well as chains of equally spaced clusters with nearly uniform diameter.

Title from PDF of title page. / Document formatted into pages; contains 73 pages. / Thesis (M.S.E.E.)--University of South Florida, 2003. / Includes bibliographical references. / Text (Electronic thesis) in PDF format. / ABSTRACT: The goals of this research project were the design and construction of a carbon nanotube (CNT) reactor based on the plasma enhanced chemical vapor deposition (PECVD) principle and the development of a method for directed assembly of CNTs by catalyst patterning. PECVD was selected as the growth method due to the requirement of a catalyst for the growth process, thereby facilitating directed assembly and controlled diameter CNT growth at well-defined locations. The reactor was built in accord with horizontal flow design using standard ultra high vacuum components. The controllable parameters of the reactor include sample temperature, DC plasma intensity, chamber pressure, gas flow ratios, and total gas flow. The most favorable parameters for growing CNTs of well defined length, diameter, and separation were obtained by initially using parameter values obtained from literature, then optimized by changing a parameter and noting the effect on CNT growth. / ABSTRACT: Catalyst patterns for the directed assembly of CNTs were prepared by electron-beam lithography (EBL). Experiments were performed that demonstrated the feasibility of using lithographic methods to achieve directed assembly of carbon nanotubes for the manufacture of CNT devices. Experiments focusing on growth interruption and regrowth of CNTs were conducted to investigate methods of introducing tailored branching points into carbon nanotubes during the growth process. These experiments clearly demonstrate that growth interruption increases the occurrence of CNT branching. An analysis of the relationships between CNT diameter, branching points, and the number of growth steps was conducted. / System requirements: World Wide Web browser and PDF reader. / Mode of access: World Wide Web.

Zinn- und Zinnlegierungsschichten wurden mittels einer Magnetronquelle auf CuSn6- Substrate aufgebracht. Durch Wahl geeigneter Legierungspartner (Al. Ti), die galvanisch nicht abscheidbar sind, konnten Schichtwerkstoffe mit neuen Eigenschaften hergestellt und hinsichtlich einer Eignung als Kontaktveredelung geprüft werden. Verantwortlich dafür ist eine Umwandlung der grobkristallinen, durch säulenförmige Kristallite geprägten in eine feinkristalline dichte, zur Oberfläche parallel orientierte Struktur.

The electrical conductivity of transparent conducting oxides is well exploited in front surface electrodes for solar cells where high transmission is also important. Fluorine doped tin oxide (SnO2: F) is the most popular choice of front contacts for CdTe solar cells. In this thesis, Cd2SnO4 and Zn2SnO4 thin films are investigated focusing on their electrical and optical properties and used them in solar cells. Processing for these materials is optimized for optimum solar cell performance. Cd2SnO4 thin films are deposited by co-sputtering of CdO and SnO2 targets in Ar ambient at room temperature. Then films are subjected to high temperature annealing in He ambient. The films crystallize in inverse spinel structure. The average transmission of a Cd2SnO4 thin film with a thickness of 2500[angstrom] obtained in this study is 92%. The lowest resistivity obtained in this work for a Cd2SnO4 film with a thickness of 2500[angstrom] is 5.4 X10-4 cm. The effect of stoichiometry on structure, optical and electrical properties of Cd2SnO4 is studied by varying the amount of CdO and SnO2 in the Cd2SnO4 film. Zinc stannate thin films are deposited by co-sputtering of ZnO and SnO2 targets in Ar ambient at both room temperature and elevated temperatures. As deposited and high temperature annealed Zn2SnO4 thin films are highly resistive. The average transmission of a Zn2SnO4 thin film with a thickness of 2000[angstrom] and annealed at 600ʻC in He has been 94%. Zn2SnO4 thin films are incorporated as a buffer layers into CdTe solar cells. SnO2: F is used as a front contact in CdTe solar cells in conjunction with high resistive Zn2SnO4 buffer layer.The best SnO2:F /zinc stannate cell device performance for room temperature deposited zinc stannate film resulted for the device with Zn/Sn =2.1. It has an efficiency of 12.43% with VOC = 810mV, FF = 66.6% and JSC = 23.1 mA.

CdTe solar cells in the superstrate configuration have achieved record efficiencies of 16% but those in the substrate configuration have reached efficiencies of only 7.8%. A major reason for the lower efficiency of substrate CdTe solar cells is the poor back contact. In this work, CdTe solar cells of the substrate configuration have been fabricated on flexible metallic substrates. For this type of devices, impurity diffusion out of stainless-steel substrates due to high temperature processing can be a cause for poor cell performance. It is necessary to investigate ways of improving the back contact by trying to mitigate the above factors. In this work, Nitrogen has been incorporated in Molybdenum by RF magnetron sputtering. Nitrogen incorporation has helped achieve a 2% increase in efficiency for the best cell and an improvement of 1.5% on an average.

Barium Strontium Titanate (BST) based ferroelectric thin film devices have been popular over the last decade due to their versatile applications in tunable microwave devices such as delay lines, resonators, phase shifters, and varactors. BST thin films are promising candidates due to their high dielectric constant, tunability and low dielectric loss. Dielectric-tunable properties of BST films deposited by different deposition techniques have been reported which study the effects of factors, such as oxygen vacancies, film thickness, grain size, Ba/Sr ratio, etc. Researchers have also studied doping concentrations, high temperature annealing and multilayer structures to attain higher tunability and lower loss. The aim of this investigation was to study material properties of Barium Strontium Titanate from a comprehensive point of view to establish relations between various growth techniques and the film physical and electrical properties. The primary goal of this investigation was to synthesize and characterize RF magnetron sputtered Barium Strontium Titanate (Ba1-xSrxTiO3), thin film structures and compare their properties with BST thin films deposited by sol-gel method with the aim of determining relationships between the oxide deposition parameters, the film structure, and the electric field dependence. In order to achieve higher thickness and ease of fabrication, and faster turn around time, a `stacked' deposition process was adopted, wherein a thin film (around 200nm) of BST was first deposited by RF magnetron sputtering process followed by a sol-gel deposition process to achieve higher thickness. The investigation intends to bridge the knowledge gap associated with the dependence of thickness variation with respect to the tunability of the films. The film structures obtained using the three different deposition methods were also compared with respect to their analytical and electrical properties. The interfacial effect on these `stacked' films that enhance the properties, before and after annealing these structures was also studied. There has been significant attention given to Graphene-based supercapacitors in the last few years. Even though, supercapacitors are known to have excellent energy storage capability, they suffer from limitations pertaining to both cost and performance. Carbon (CNTs), graphene (G) and carbon-based nanocomposites, conducting polymers (polyaniline (PANI), polypyrrole (PPy), etc.) have been the fore-runners for the manufacture of supercapacitor electrodes. In an attempt to better understand the leakage behavior of Graphene Polyaniline (GPANI) electrodes, BST and BST thin films were incorporated as constituents in the process of making supercapacitor electrodes resulting in improved leakage behavior of the electrochemical cells. A detailed physical, chemical and electrochemical study of these electrochemical cells was performed. The BST thin films deposited were structurally characterized using Veeco Dektek thickness profilometer, X-ray diffraction (XRD), Scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. The interfacial structural characterization was carried out using high-resolution transmission electron microscopy (HRTEM). This investigation, also presents noncontact electrical characterization of BST films using Corona Kelvin metrology (C-KM). The `stacked' BST thin films and devices, which were electrically tested using Corona Kelvin metrology, showed marked improvement in their leakage characteristics over both, the sputtered and the sol-gel deposited counterparts. The `stacked' BST thin film samples were able to withstand voltages up to 30V positive and negative whereas, the sol-gel and sputtered samples could hold only up to a few volts without charge leaking to reduce the overall potential. High frequency, 1GHz, studies carried out on BST thin film interdigitated capacitors yielded tunability near 43%. Leakage barrier studies demonstrated improvement in the charging discharging response of the GPANI electrochemical electrodes by 40% due to the addition of BST layer.

The composition-dependent Curie temperature and bias-dependant dielectric permittivity of Barium Strontium Titanate (BST) makes it very attractive for tunable application in the RF/Microwave regime. In this research work, the performance of BST varactors fabricated on the conventional Pt/Ti/SiO2/Si bottom electrode stack were compared with those fabricated using chemical vapor deposited Nanocrystalline Diamond (NCD) as the diffusion barrier layer instead of SiO2. The varactors fabricated on NCD films displayed much better symmetry in capacitance-voltage behavior and better overall quality factors than varactors fabricated on SiO2. The improvement in performance can be attributed to existence of stable interfaces in the devices fabricated on NCD which reduced the bottom electrode losses at high frequencies. The SiO2 based BST varactors on the other hand displayed better reliability and breakdown fields. The main purpose of this research work is to develop a robust Metal Insulator Metal (MIM) structure to achieve better all round performance of BST varactors. In the second part of this research work, the prospect of developing diamond based layered Surface Acoustic Wave (SAW) devices using Ba0.8Sr0.2TiO3 as the piezoelectric layer is investigated. Structural characterization of BST thin films deposited on Si/NCD/Pt and Si/SiO2/Ti/Pt stack were performed using X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM). Cross-sectional studies on the two stacks were performed using Scanning Electron Microscopy (SEM). X-Ray Mapping (XRM) was then done to ascertain the quality of the interfaces and to check for interdiffusion between layers. MIM structures in the Coplanar Waveguide (CPW) configuration were fabricated using conventional lithography and etching techniques for high frequency measurements. The performance of the fabricated varactors was characterized from 100 MHz to 1 GHz. For the SAW application, structural characterization of Ba0.8Sr0.2TiO3 on Chemical Vapor Deposited (CVD) diamond was done and the deposition procedure was optimized to obtain thick BST films. SAW bandpass filters and resonators were designed wherein the device geometry was varied over a wide range in order to characterize the variation in device performance with geometry. Finally interdigital capacitor structures were fabricated and used for conducting Curie temperature measurements on the deposited BST films in order to determine the operation range of the deposited BST films.

A growing need for developing new multi-functional materials operating at microwave frequencies is demanding a better understanding of ferroelectric and ferrimagnetic materials and their combinations. Some of these materials exhibit tunable physical properties, giving an extra degree of freedom in the device design. New multifunctional ferroelectric and ferrimagnetic thin film structures are investigated in this dissertation research, in which dielectric and magnetic properties can separately be tuned over a certain frequency range. The materials of choice, Ba0.5Sr0.5TiO3 (BST) and BaFe12O19 (BaM), both well studied and used in many microwave applications, were prepared using rf magnetron sputtering and pulsed laser ablation. Thin-film bilayers, multilayers and composite thin films were grown on various substrates, and their underlying microstructure and crystallographic properties were analyzed and optimized. After identifying the most successful growth conditions,dielectric and magnetic properties were measured. Unusual features in magnetic hysteresis loops in both sputtered and laser ablated films grown under different conditions were observed. Microcircuits were fabricated using optical lithography and microwave properties and tunability were tested in the range 1-65 GHz.

Σε αυτή την διπλωματική στο ΠΜΣ Επιστημής Υλικών, έγινε προσπάθεια δημιουργίας νέων πλασμονικών δομών, μέσω της οξείδωσης μεταβατικών μετάλλων από τα στερεά τους διαλλύματα που αναπτύχθηκαν μέσω της τεχνικής της ιοντοβολής. Ελέγχοντας, την διεθνή βιβλιογραφία δεν βρέθηκε τρόπος παρεμφερής της πειραματικής διαδικασίας που ακολουθήθηκε, για την επίτευξη πλασμονικών δομών. Τα συστήματα που μελετήθηκαν είναι υμένια CuO / Au και Cu2O / Au, όπου η διηλεκτρική μήτρα είναι το ημιαγώγιμο οξείδιο και το πλασμονικό μέταλλο είναι το ευγενές μέταλλο του Au. Επίσης, να σημειωθεί ότι έλαβαν χώρα προκαταρκτικά πειράματα με χρήση NiO, όπου και αποδεικνύεται η γενικότητα της μεθοδολογίας, που ακολουθείται. Συνολικά, υπήρξαν τρεις διαφορετικές συγκεντρώσεις σε Au στα υμένια, οι οποίες πιστοποιήθηκαν μέσω της τεχνικής EDS. Πέραν, του επηρεασμού που δέχτηκαν τα ημιαγώγιμα οξείδια του χαλκού στο ενεργειακό διάκενο (υπολογισμός μέσω φασματοσκοπίας απορρόφησης ορατού / υπεριώδους UV / VIS), εξαιτίας της δημιουργίας διαφορετικών παχών υμενίου (φαινόμενα κβαντικού περιορισμού) και της παρουσίας του ευγενούς μετάλλου (Au), το σημαντικότερο σημείο είναι αυτό που αφορά την μελέτη και παρατήρηση εντοπισμένων επιφανειακών πλασμονικών συντονισμών (υπολογισμός μέσω τεχνικής UV / VIS), των λεγόμενων Localized Surface Plasmon Resonances – LSPR, τα οποία σχετίζονται με την απόκριση των ηλεκτρονίων αγωγιμότητας των μεταλλικών νανοσωματίδίων (< 100 nm) με μέγεθος μικρότερο από το μήκος κύματος της προσπίπτουσας ακτινοβολίας. Επιπρόσθετα, παρουσιάζονται κάποια διαγράμματα που αφορούν επιφανειακούς πλασμονικούς συντονισμούς σε μεταλλικά υμένια Au – Cu. Οι συντονισμοί LSPR μελετήθηκαν για διάφορους ρυθμούς ανόπτησης και για διάφορες συγκεντρώσεις. / In this thesis, an attempt was made to create new plasmonic structures, through the technique of sputtering. Going through the literature we could not find way similar experimental procedure followed to achieve plasmonic structures. The systems that have been studied are films CuO / Au and Cu2O / Au, wherein the dielectric matrix is semiconductor oxide and the plasmon metal is a noble metal of Au. Overall, there were three different concentrations of Au in the films, which were identified through EDS. In addition, the influence of thin film thickness on the energy gap due to quantum confinement was studied. The most important point is the observation of localized surface plasmon resonances (calculation through UV / VIS), the so-called LSPR, which are related to the response of the free electrons of metal nanoparticles (<100 nm) to the electric field of light. Resonances LSPR studied for various annealing rates and different concentrations of gold. We have to say that, after the appropriate annealing, we observed the creation of solid solutions (XRD).