This past decade, 2D materials beyond graphene, and most specifically transition metal dichalcogenides (TMDCs) have gained remarkable attention due to their novel applications in electronics and optoelectronics applications. This work reports large-area growth and structural, optical, and electronic transport properties of few-layer MoS2 thin films fabricated using a hybrid approach based on the magnetron sputtering method. In the first part of this dissertation, properties of optimally annealed MoS2 on different substrates such as amorphous BN, SiO2, Si, Al2O3 are discussed using diffraction, spectroscopic, and transport techniques. Later, we show that the physical properties of large-area sputtered MoS2 thin films can be dramatically improved by an ex-situ high-temperature sulfurization process as it leads to the formation of defect-free MoS2 by removing sulfur vacancies. Sharp film-substrate interface along with high bulk structural order is demonstrated as inferred from diffraction and spectroscopic methods. We show that sulfur vacancies can obscure the MoS2 A-B exciton peaks along with a sharp increase in dc conductivity of MoS2. In the last part of my dissertation, we outline the growth of a novel thermoelectric material (SnSe) and new magnetic inverse-Heuslers (of nominal composition MnxFeSi) using the co-sputtering method. These are some of the first attempts, to our knowledge, to grow such materials in thin-film form. Detailed structure-property relations are thoroughly discussed.

In this thesis, group IV material oxides for silicon photonics applications were deposited using novel deposition techniques. Erbium and terbium doped silicon oxide thin films were deposited through a novel hybrid radio frequency (RF) magnetron sputtering source in an electron cyclotron resonance (ECR)-plasma enhanced chemical vapour deposition (PECVD) reactor chamber. This approach contrasts with traditional doping methods which use metal-organic precursors to introduce rare-earth dopant species into the host matrix. The effects of sputtering power applied to the rare-earth target and system plasma pressure on the thin film properties were investigated. It was found that the sputtering power strongly influences the rare-earth incorporation, and a wide range of control over the doping level can be achieved. The effect of sputtering power on the refractive index, stoichiometry, and film density were also investigated. Doped thin films deposited with this technique showed low as-deposited hydrogen concentrations. In the case of terbium doped silicon oxide (SiOx), photoluminescence (PL) studies were conducted finding bright emission due to 5D4 → 7F5 transitions visible with the naked eye in films annealed above 1150 °C. Further investigation found that silicon nanostructures formed at the high annealing temperatures and were likely sensitizing the Tb3+ ions. These results demonstrate that hybrid sputtering in ECR-PECVD can be an effective tool for integrating optically active rare-earth dopants into silicon-based thin films. Using alternating current (AC) plasma assisted reactive magnetron sputtering (PARMS), low optical loss germanium oxide (GeO2) thin films were also produced. The films were fabricated at low temperature and high deposition rates of 6–38 nm/min on silicon and thermally oxidized silicon substrates. Prism coupling measurements demonstrated losses of 0.1 dB/cm at wavelengths ranging from 638 to 980 nm attributed to good uniformity and low surface roughness demonstrated through atomic force microscopy (AFM) measurements. The thin films materials developed here are highly promising for their applications in silicon photonics devices, including light sources and amplifiers. / Thesis / Candidate in Philosophy

High Power Impulse Magnetron Sputtering (HiPIMS) comes as a new and promising PVD method for the development of high-performance coatings for cutting applications. This technique utilizes high energy and ionization which can produce a denser and stronger ceramic in comparison to traditional deposition techniques. Important coating characteristics that arise from this method such as enhanced hardness, adhesion, and less defects, can be applied when machining hard-to-cut materials. In this study, investigation of tool life and wear mechanisms, mechanical and physical properties of AlTiN coatings deposited on carbide tools by HiPIMS and Cathodic Arc Evaporation (CAE) were analyzed when machining Inconel 718 and Stainless Steel 304. Experimental turning tests were performed to evaluate tool life, and the wear mechanisms were analyzed by optical and scanning electron microscopy. Nanohardness, scratch test, fracture toughness and other methods were carried out to evaluate the coating properties. Impedance experiments were performed to determine the coating porosity and resistance to corrosion. The results showed that HiPIMS coating presented higher hardness, toughness to fracture and adhesion to the substrate in comparison to CAE coatings. The HiPIMS coated tool substantially improved tool life when machining Inconel. The dominant wear mechanism found was abrasion, which is induced by the presence of hard carbides. The main wear patterns observed were flank, notch, and crater wear. The tool performance of HiPIMS was found to have enhanced mechanical properties, lower porosity, and form a larger amount of tribo-oxides when machining, in comparison to CAE. / Thesis / Master of Applied Science (MASc)

Nanoelectronics is a field undergoing rapid development, meaning knowledge of the materials and methods used in nano-scale systems is a driving force in the industry. Silicon is a well known material in nanoelectronics commonly used as a semiconductor and is therefore a good representative for nanomaterials in general. In this thesis work the effects of the helium and neon ions with the energies 100 keV and 200 keV respectively on surface contaminants and the bulk material of nanometer thick silicon membranes are being studied. Beyond interactions based on different incident ions, the effects are studied inboth the geometries of transmission and backscattering, giving information about the immediate effects on the surface, as well as bulk effects. Using Medium Energy Ion Scattering (MEIS), the positively charged particles on the surfaces and in the bulk of the materials, which are either sputtered or desorbed, can be detected. While the ions are different, the energies in this work are chosen to be such, that the electronic stopping power is the same, while the nuclear stopping of neon is vastly higher. From this work, it is concluded that both ions have the same qualitative effects on the membrane contaminants, consisting of hydrocarbons, which are desorbed electronically. Furthermore, neon has the effect of destructively sputtering the bulk material. A synergistic effect of electronic and nuclear deposition was also found, as quantitatively, more hydrocarbons per incident Ne+ ion were desorbed than per incident He+ ion. The change in effect based on different geometries can to a large extent be attributed to the energy loss of the ions in the material. The one change between geometries which can not be explained by energy loss in the material, is a 50% under representation of desorbed hydrogen ions in transmission geometryfor He+ incident ion. It is also concluded that the method used has the potential to be a viable, non-destructive and scalable cleaning and measuring method for contaminations on nano-scale materials, such as 2 dimensional materials. / Nanoelektronik är ett område under snabb utveckling, vilket gör kunskap kring de material som bygger upp elektroniken drivande i utvecklingen av teknologin. Kisel är ett välkänt material inom nanoteknologin då det är välanvänt som halvledare, vilket gör det till en bra representant för en mängd andra nanomaterial. I detta examensarbete undersöks de effekter som 100 keV helium- och 200 keV neonjoner har på ytföroreningar och bulkmaterial av kiselmembran i nanometertjocklek. Utöver olika jonslag undersöks även skillnaderna mellan membranets geometri i transmission och backåtspridning. Detta ger information, både om de direkta effekterna som jonerna har på materialets bestrålade yta, samt effekterna på den motsatta ytan. Genom användningen av ”Medium Energy Ion Scattering” (MEIS) kan de positivt laddade partiklarna på ytan och i bulkmaterialet, som genom elektronisk och nukleär växelverkan bryts läs, utforskas. Partiklarnas energier har valts så att den elektroniska bromsförmågan är densamma för de två partiklarna, medan den nukleära bromsförmågan skiljer sig kraftigt. Från detta arbete kan slutsatsen dras att båda joner har samma kvalitativa effekt på kiselmembranets föroreningar i form av kolväten. Dock har neon en betydlig nukleär, destruktiv effekt på bulkmaterialet. En synergistisk effekt har också kvantitativt observerats, där de elektroniska effekterna på kolväten är högre för neonjoner. De förändringar som påvisades i de olika geometrierna kan i stort förklaras av energiförlust av jonerna under passagen genom membranet. Den geometribaserade differens som inte följer förklaringen energiförlust är desorberat väte, vilket är 50 % mindre i transmissionsgeometri för heliumjoner. Den andra slutsatsen som kan dras från detta arbete är att den använda metoden har potentialen att utvecklas till en icke-destruktiv och skalbar metod för rengöring och mätning av föroreningar på nanomembran så som 2 dimensionella material.

Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO’s. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by Xray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film.The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.

Molybdenum (Mo) thin film back contact layers for thin film CuIn(1-x)GaxSe2 (CIGS) solar cells were deposited onto soda lime glass substrates using a direct current (DC) planar magnetron sputtering deposition technique. Requirements for the Mo thin film as a back contact layer for CIGS solar cells are various. Sheet resistance, contact resistance to the CIGS absorber, optical reflectance, surface morphology, and adhesion to the glass substrate are the most important properties that the Mo thin film back contact layer must satisfy. Experiments were carried out under various combinations of sputtering power and working gas pressure, for it is well known that mechanical, morphological, optical, and electrical property of a sputter-deposited Mo thin film are dependent on these process parameters. Various properties of each Mo film were measured and discussed. Sheet resistances were measured using a four-point probe equipment and minimum value of 0.25 Ω/sq was obtained for the 0.6 µm-thick Mo film. Average surface roughnesses of each Mo film ranged from 15 to 26 Å were measured by Dektak profilometer which was also employed to measure film thicknesses. Resistivities were calculated from the sheet resistance and film thickness of each film. Minimum resistivity of 11.9 µΩ∙cm was obtained with the Mo thin film deposited at 0.1 mTorr and 250 W. A residual stress analysis was conducted with a bending beam technique with very thin glass strips, and maximum tensile stress of 358 MPa was obtained; however, films did not exhibit a compressive stress. Adhesive strengths were examined for all films with a "Scotch-tape" test, and all films showed a good adhesion to the glass substrate. iv Sputter-deposited Mo thin films are commonly employed as a back contact layer for CIGS and CuInSe2 (CIS)-based solar cells; however, there are several difficulties in fabricating a qualified back contact layer. Generally, Mo thin films deposited at higher sputtering power and lower working gas pressure tend to exhibit lower resistivity; however, such films have a poor adhesion to the glass substrate. On the other hand, films deposited at lower power and higher gas pressure tend to have a higher resistivity, whereas the films exhibit an excellent adhesion to the glass substrate. Therefore, it has been a practice to employ multi-layered Mo thin film back contact layers to achieve the properties of good adhesion to the glass substrate and low resistivity simultaneously. However, multi layer processes have a lower throughput and higher fabricating cost, and requires more elaborated equipment compared to single layer processes, which are not desirable from the industrial point of view. As can be seen, above mentioned process parameters and the corresponding Mo thin film properties are at the two extreme ends of the spectrum. Hence experiments were conducted to find out the mechanisms which influence the properties of Mo thin films by changing the two process parameters of working gas pressure and sputtering power individually. The relationships between process parameters and above mentioned properties were studied and explained. It was found that by selecting the process parameters properly, less resistive, appropriatesurfaced, and highly adhesive single layer Mo thin films for CIGS solar cells can be achieved.

With the advent of the 21st century, one of the serious problems facing mankind is harmful effects of global warming. Add to that the ever increasing cost of fuel and the importance of development of clean energy resources as alternative to fossil fuel has becomes one of the prime and pressing challenges for modern science and technology in the 21st century. Recent studies have shown that energy related sources account for 50% of the total emission of carbon dioxide in the atmosphere. All research activities are focused on developing various technologies that are capable of converting sunlight into electricity with high efficiency and can be produced using a cost-effective process. One of such technologies is the CuIn1-xGaxSe2 (CIGS) and its alloys that can be produced using cost-effective techniques and also exhibit high photo-conversion efficiency. The work presented here discusses some of the fundamental issues related to high volume production of CIGS thin film solar cells. Three principal issues that have been addressed in this work are effect of reduction in absorber thickness on device performance, micrononuniformity involved with amount of sodium and its effect on device performance and lastly the effect of working distance on the properties of molybdenum back contact. An effort has been made to understand the effect of absorber thickness on PV parameters and optimize the process parameters accordingly. Very thin (

Thin film solar cells have the potential to be an important contributor to the world energy demand in the 21st century. Among all the thin film technologies, CuInGaSe2 (CIGS) thin film solar cells have achieved the highest efficiency. However, the high price of photovoltaic (PV) modules has been a major factor impeding their growth for terrestrial applications. Reduction in cost of PV modules can be realized by several ways including choosing scalable processes amenable to large area deposition, reduction in the materials consumption of active layers, and attaining faster deposition rates suitable for in-line processing. Selenization-sulfurization of sputtered metallic Cu-In-Ga precursors is known to be more amenable to large area deposition. Sputter-deposited molybdenum thin film is commonly employed as a back contact layer for CIGS solar cells. However, there are several difficulties in fabricating an optimum back contact layer. It is known that molybdenum thin films deposited at higher sputtering power and lower gas pressure exhibit better electrical conductivity. However, such films exhibit poor adhesion to the soda-lime glass substrate. On the other hand, films deposited at lower discharge power and higher pressure although exhibit excellent adhesion show lower electrical conductivity. Therefore, a multilayer structure is normally used so as to get best from the two deposition regimes. A multi-pass processing is not desirable in high volume production because it prolongs total production time and correspondingly increases the manufacturing cost. In order to make manufacturing compliant with an in-line deposition, it is justifiable having fewer deposition sequences. Thorough analysis of pressure and power relationship of film properties deposited at various parameters has been carried out. It has been shown that it is possible to achieve a molybdenum back contact of desired properties in a single deposition pass by choosing iv the optimum deposition parameters. It is also shown that the film deposited in a single pass is actually a composite structure. CIGS solar cells have successfully been completed on the developed single layer back contact with National Renewable Energy Laboratory (NREL) certified device efficiencies > 11%. The optimization of parameters has been carried out in such a way that the deposition of back contact and metallic precursors can be carried out in identical pressure conditions which is essential for in-line deposition without a need for load-lock. It is know that the presence of sodium plays a very critical role during the growth of CIGS absorber layer and is beneficial for the optimum device performance. The effect of sodium location during the growth of the absorber layer has been studied so as to optimize its quantity and location in order to get devices with improved performance. NREL certified devices with efficiencies > 12% have been successfully completed.

In thin film solar cells there is a front contact layer called TCO, transparent conducting oxide. This layer requires high conductivity and high transmittance. Different materials such as Tin doped indium oxide (ITO) and Aluminum doped zinc oxide (AZO) are current good alternatives but several other materials are investigated to find even better materials. One of them is tungsten doped indium oxide (IOW). This project was about investigating the deposition process for IOW and characterize the properties of IOW thin film to investigate the possibilities for implementing this material as a contact layer in thin film solar cells. The results from the two batches of depositions varied a lot. Some samples came out dark, but some were transparent and had a high transmittance, suitable for a TCO. The highest transmittance reached through this process was around 95 % in the infrared (IR) range and around 90 % in the visible range. When it comes to the resistivity, no IOW-samples reaches desired levels for a TCO. The lowest resistivity reached was 6.36 * 10-4 W cm. The results showed that the sample with the lowest resistivity was the undoped material, which is contradicting the current theory on the subject. The lowest resistivity for the IOW film was 6.50 * 10-3 W cm.

No description available.