Cette thèse porte sur le développement d’un cogénérateur résidentiel constitué d’un générateur linéaire asynchrone entraîné par deux moteurs Stirling fonctionnant en mode ‘piston libre double effet’. Les critères caractérisant un tel cogénérateur sont décrits ainsi que ses différents modes d’utilisation dans le domaine résidentiel. Les différentes technologies sont passées en revue.Les équations de la mécanique sur lesquelles se fondent le contrôle du couplage thermoélectrique du cogénérateur et sa stabilité y sont définies. Le générateur électrique est modélisé en vue de calculer les grandeurs électriques des équations à bobines couplées et les grandeurs du schéma électrique équivalent, ce schéma permet d’inverser le modèle.Les résultats des modèles analytiques sont validés par des mesures faites sur des maquettes spécialement conçues. Une étude paramétrique de la structure du générateur a permis d’optimiser ses performances. Les équations de la mécanique et le modèle électrique sont utilisés pour poser les bases d’une optimisation ‘système’ du cogénérateur. / This thesis focuses on the development of a residential cogenerator which consists of a linear induction generator driven by two Stirling engines, free-piston double-acting operating mode. The criteria characterizing such cogenerator are described and its various modes of use in the residential sector. The various technologies are reviewed.The equations of mechanics that underlie the control of the coupling of thermoelectric cogeneration and stability are defined.The electric generator is modeled to calculate the electrical coil coupled equations and the magnitudes of the equivalent circuit, this scheme allows us to reverse the pattern. The results of analytical models are validated by measurements on specially designed models. A parametric study of the structure of the generator has optimized its performances. The equations of mechanical and electrical model are used to lay the groundwork for optimization of all the cogenerator, considered as a system.

On assiste aujourd’hui à une évolution des systèmes électroniques nomades vers des fonctionnalités plus avancées. Cette complexification des systèmes électroniques nomades nécessite une augmentation de la puissance de calcul des puces électronique, ce qui se peut se traduire par une utilisation d’une technologie CMOS agressive, mais qui se complète aujourd’hui par une technique appelée intégration 3D. Il ne s’agit donc plus d’une évolution classique à l’échelle du transistor suivant la loi de Moore mais à celle de l’échelle plus large du boîtier / système, on parle alors de la loi de « More than Moore ». L’empilement tridimensionnel (3D) des puces électroniques engendre une augmentation de la densité de puissance totale dissipée par unité de surface de l’empilement final. Cette puissance, résultant essentiellement de l’effet joule dans les transistors et l’interconnexion, est une source de chaleur qui contribue à l’augmentation de la température globale de la puce. L’objectif global de cette thèse est d’étudier les échanges thermiques dans un empilement de puces 3D durant leur fonctionnement. On s’attachera à comprendre les effets géométriques ou matériaux de l’empilement ainsi que l’impact du placement des TSV, Bumps ... sur ces échanges thermiques. L’étude s’appuie sur des simulations numériques validées par des mesures expérimentales sur des empilements 3D. Ces études numérique et expérimentale auront comme finalité de déduire des règles de dessin thermiques qui seront validées sur le dessin de circuits basiques ou plus complexes. Dans la suite, ces différents objectifs seront motivés et abordés en détail. L’établissement d’un modèle thermique basé sur des simulations en éléments finis d’un procédé industriel CMOS 65 nm 3D permettra d’aborder le problème de modélisation de la manière la plus précise possible. En effet, les précédentes simulations ont utilisé des modèles compacts – donc de moindre précision que les éléments finis – et un procédé générique qui ne reflète pas toutes les propriétés des matériaux, et en particulier celles des interfaces. Les résultats ainsi obtenus seront validés par des mesures sur des puces empilées réalisées dans le procédé considéré. Dans cette partie expérimentale, l’objectif est de déterminer une cartographie de la température dans un empilement 3D en utilisant des capteurs embarqués dans le silicium, et ce sous différentes conditions d’opération de la puce 3D. Il en ressortira un modèle numérique validé et calibré par des mesures expérimentales. / Today we are witnessing an evolution of mobile electronic systems to more advanced features. The complexity of mobile electronic systems requires an increase in computing power of electronic chips, which can lead to the use of aggressive CMOS technology, but which now completed with a technique called 3D integration. It is more of a classical evolution across the transistor following Moore's law but that of the wider scale of the packaging / system, it is called the law of "More than Moore". Three dimensional (3D) stack of electronic chip generates an increase in the density of total power dissipated per unit area of the final stack. This power, essentially resulting in the Joule effect transistors and interconnection, is a source of heat which contributes to increase the overall temperature of the chip. The global objective of this thesis is to study the heat transfer in a 3D stack of chips during operation. We will seek to understand the geometric or materials effects of the stack and the impact of the placement of TSV, Bumps ... on these heat exchanges. The study is based on numerical simulations validated by experimental measurements on 3D stacks. These numerical and experimental studies have as a goal to deduce thermal design rules that will be validated in the drawing of basic or more complex circuits. In the following, these goals will be motivated and discussed in detail. The establishment of a thermal model based on finite element simulations of an industrial process 3D CMOS 65 nm will address the problem of modelling the most accurate way possible. Indeed, previous simulations used compact models - so that the lower accuracy of finite elements - and a generic method that does not reflect all of the properties of materials, and in particular interfaces. The results obtained will be validated by measurements on stacked chips carried out within the process concerned. In the experimental part, the objective is to determine a thermal mapping in a 3D stack using sensors embedded in the silicon, and under different conditions of 3D chip process. This will provide a numerical model validated and calibrated by experimental measurements.

Em função do crescente processo de liberalização dos mercados de gás natural e de energia elétrica nos países do hemisfério norte, bem como pelo aumento das restrições ambientais, as projeções de demanda mundial de gás natural indicam um forte crescimento, principalmente no segmento de geração de energia elétrica. Assim, pode-se afirmar que haverá uma convergência cada vez maior entre os mercados de gás natural e de eletricidade. O transporte do gás natural em sua forma liquefeita, o GNL (Gás Natural Liquefeito), representa um importante pivô para essa convergência, bem como para uma integração global crescente dos mercados de gás natural e eletricidade. Essas evoluções sempre estiveram distantes da realidade brasileira, pois a geração elétrica predominantemente hídrica historicamente reservou um papel limitado para a geração termelétrica. No entanto, desde 2001, como resultado da crise de abastecimento de energia elétrica, o Brasil também fez esforços importantes rumo a uma maior convergência entre os mercados de gás e eletricidade. Desde 2005, a importação de GNL tem sido analisada para o caso brasileiro, visando prioritariamente o atendimento de uma demanda termelétrica para o gás natural. A característica principal deste modelo é a necessidade de se garantir uma oferta de combustível flexível para usinas que deverão suprir uma demanda termelétrica igualmente flexível: oferta flexível para demanda flexível. A luz das evoluções em curso no mercado global, o presente trabalho avalia a viabilidade deste modelo a partir da análise das possibilidades do suprimento de GNL ser efetuado de forma flexível, atuando, assim, como mecanismo de flexibilização da oferta de gás natural e garantindo um melhor aproveitamento da capacidade de geração elétrica atualmente instalada no Brasil. / Due to the growth of liberalization process on natural gas and electricity markets on northern hemisphere countries, as well as due to raising environmental restrictions, world natural gas demand projections indicate a strong growth, mainly driven by the power generation segment. Therefore, we can affirm that will have an even higher convergence between natural gas and electricity markets. Natural gas transportation in its liquefied form, the LNG (Liquefied Natural Gas), represents an important pivot for this convergence, as well as for the raising global integration of electricity and natural gas markets. These evolutions were always distant from Brazilian reality, as dominant hydroelectric generation historically reserved a limited role for thermoelectric generation. However, since 2001, as a result from the electricity supply crisis, Brazil also did important efforts towards a greater convergence between natural gas and electricity markets. Since 2005, LNG importation has been analyzed for the Brazilian case, primarily focusing thermoelectric demand utilization for the natural gas. The main characteristic of this model is the necessity to guarantee a flexible fuel supply for power plants that shall supply an equally flexible thermoelectric demand: flexible supply for flexible demand. In light of the evolutions underway on the global market, this study evaluates the viability of this model based on the possibility of LNG supplies be done on flexible way, acting then as a natural gas supply flexibility mechanism and guaranteeing a better utilization of the thermoelectric generation capacity already installed in Brazil.

No setor de energia elétrica, a área que se dedica ao estudo da inserção de novos parques geradores de energia no sistema é denominada planejamento da expansão da geração. Nesta área, as decisões de localização e instalação de novas usinas devem ser amplamente analisadas, a fim de se obter os diversos cenários proporcionados pelas alternativas geradas. Por uma série de fatores, o sistema de geração elétrico brasileiro, com predominância hidroelétrica, tende a ser gradualmente alterada pela inserção de usinas termoelétricas (UTEs). O problema de localização de UTEs envolve um grande número de variáveis através do qual deve ser possível analisar a importância e contribuição de cada uma. O objetivo geral deste trabalho é o desenvolvimento de um modelo de localização de usinas termoelétricas, aqui denominado SIGTE (Sistema de Informação Geográfica para Geração Termoelétrica), o qual integra as funcionalidades das ferramentas SIGs (Sistemas de Informação Geográfica) e dos métodos de decisão multicritério. A partir de uma visão global da área estudada, as componentes espaciais do problema (localização dos municípios, tipos de transporte, linhas de transmissão de diferentes tensões, áreas de preservação ambiental, etc.) podem ter uma representação mais próxima da realidade e critérios ambientais podem ser incluídos na análise. Além disso, o SIGTE permite a inserção de novas variáveis de decisão sem prejuízo da abordagem. O modelo desenvolvido foi aplicado para a realidade do Estado de São Paulo, mas deixando claro a viabilidade de uso do modelo para outro sistema ou região, com a devida atualização dos bancos de dados correspondentes. Este modelo é designado para auxiliar empreendedores que venham a ter interesse em construir uma usina ou órgãos governamentais que possuem a função de avaliar e deferir ou não a licença de instalação e operação de usinas. / In the electric power industry, there is an area devoted to study alternatives for the expansion of the energy generation system. The decisions regarding the location and installation of new plants ought to be thoroughly analyzed in that planning activity, in order to foresee the likely scenarios resulting from the combination of distinct alternatives. For a number of reasons, the predominantly hydroelectric generation system historically set in Brazil tends to be gradually altered by the introduction of thermoelectric power plants (TPPs). The site selection problem involves, in the case of TPPs, a large number of variables, which contribute to the analysis process in various ways and with different levels of importance. The general goal of this work is the development of a location model of thermoelectric plants, here named SIGTE (an acronym for Geographic Information System for Thermoelectric Generation), which integrates the functionalities of the GIS tools (Geographic Information Systems) and multicriteria decision methods. Starting from an overall view of the studied area, this combination of techniques ensures a more realistic representation of the spatial components of the problem (e.g., the location of the municipalities, the transportation alternatives, the different voltages of transmission lines, areas of environmental preservation, etc.) It thus allows a straightforward inclusion of environmental criteria in the analysis. In addition, the SIGTE framework is also flexible enough to incorporate new decisions variables. The model was applied in a case study carried out in the state of Sao Paulo, although it can be easily adapted for use in other systems or geographical areas given that the corresponding databases are available. SIGTE was envisaged to be a supporting tool to public and private stakeholders interested in building new power plants or to governmental agencies in charge of the regulation mechanisms required for the installation nd operation of plants.

Organic semiconductors have wide applications in organic-based light-emitting diodes, field-effect transistors, and thermoelectrics due to the easily modified electrical and optical properties, excellent mechanical flexibility, and solution processability. To fabricate high performance devices, it is important to understand charge transport mechanisms, which are mainly affected by material energetics and material morphology. Currently it is difficult to control the charge transport properties of new organic semiconductors and organic-inorganic nanocomposites due to our incomplete understanding of the large number of influential variables. Molecular doping of π-conjugated polymers and surface modification of nanowires are two means through which charge transport can be manipulated. In molecular doping, both the energetics and microstructures of polymer films can be changed by controlling the degree of oxidation of the conjugated polymer backbone. For surface modification of inorganic nanowires, the energetics and morphology can be influenced by the properties of the surface modifiers. Meanwhile, the energy band alignment, which can be controlled by surface modification and molecular doping, may also alter the charge transport due to the variation in energetic barriers between the transport states in the organic and inorganic components. To reveal the effects of morphology and energetics on charge transport in conjugated polymers and organic-inorganic nanocomposites, the influence of surface modifier on the electrical and morphological properties of nanocomposites was first probed. Silver nanowires modified with different thiols were blended with poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) to fabricate thin films. The modified nanowires provided a means of controllably altering the nanowire dispersability and compatibility with solvents and polymers. The results also demonstrated that charge transport between the nanowires was facilitated due to low wire-to-wire junction resistance. To further figure out the charge transport mechanism in organic-inorganic nanocomposites and the potential applications, tellurium nanowires and ferric chloride doped poly (3-hexylthiophene-2,5-diyl)(P3HT) were used to characterize energy band alignment effects on charge transport, electrical conductivity, and thermoelectric properties. The results showed that charge transfer between nanowires can be mediated by the polymer and may potentially increase the electrical conductivity as compared to the pure polymer or pure nanowires; while the observed enhancement of power factor (equal to electrical conductivity times the square of Seebeck coefficient) may not be affected by the energy band alignment. It is important to investigate the change of polymer morphology caused by molecular doping and processing method to determine how the morphology will influence the electrical and thermoelectric properties. Various p-type dopants, including ferric chloride and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Motfd3), were examined for us in P3HT and other polymers. The results showed that: i) At light doping levels, the electrical conductivity and power factor of polymers doped with the large electron affinity (EA) dopants were larger than small EA dopants; ii) At heavy doping levels, the large size dopants cannot effectively dope polymers even for the dopants with large EAs; iii) For the same dopant, as the IE of the polymer increased, the doping efficiency gradually decreased.

L'objectif de cette thèse était d'étudier les propriétés thermoélectriques de couches minces d'oxyde de type delafossite déposées par pulvérisation cathodique magnétron. Pour cela, les oxydes CuCrO2:3%Mg, CuFeO2:3%Mg et CuCr0,84Fe0,16O2:3%Mg ont été déposés avec différentes épaisseurs sur des substrats de silice amorphe puis traités sous vide à différentes températures afin d'obtenir la structure delafossite. La température de traitement thermique optimale permettant d'obtenir les meilleures propriétés thermoélectriques est de 550°C pour CuCrO2:Mg et CuCr0,84Fe0,16O2:Mg et de 700°C pour CuFeO2:Mg. L'épaisseur optimale des couches minces est de 100 nm pour la delafossite au chrome et de 300 nm pour celle au fer. La conductivité électrique des couches augmente avec la température tout en conservant un coefficient Seebeck positif et constant pour les trois compositions données impliquant un mécanisme par saut de polarons. Le facteur de puissance des couches minces CuCrO2:Mg, CuFeO2:Mg et CuCr0,84Fe0,16O2:Mg dont l'épaisseur et la température de recuit ont été optimisées atteint respectivement 59 µW.m-1K-2, 84 µW.m-1K-2 et 36 µW.m-1K-2 à 200°C. Les études microstructurales et structurales ont permis de comprendre la variation du facteur de puissance avec la température de recuit et l'épaisseur. Elles ont notamment montré que la décroissance de la conductivité électrique des films traités à haute température est due à des phénomènes concomitants de fissuration de la couche et de ségrégation du magnésium. Une étude thermique utilisant la modélisation avec la méthode des éléments finis a permis de démontrer que dans le cas des couches minces, la conductivité thermique du substrat peut se substituer à celle du film dans le calcul de facteur de mérite. La validité du facteur de mérite modifié ((ZT)* = S2σ/ksubstrat) a été énoncée en fonction de l'épaisseur, l'émissivité et la conductivité thermique de la couche mince. L'utilisation de la méthode 3ω a permis de déterminer une valeur de conductivité thermique de 4,82 W.m-1k-1 à 25°C pour le film mince CuFeO2:Mg, qui se situe dans le domaine de validité établi pour l'utilisation de (ZT)*.[...] / The aim of this thesis was to study the thermoelectric properties of delafossite type oxides thin-films deposited by RF-magnetron sputtering. Several thicknesses of CuCrO2:3%Mg, CuFeO2:3%Mg and CuCr0,84Fe0,16O2:3%Mg oxides were deposited on fused silica then annealed under vacuum at different temperatures in order to obtain delafossite structure. The optimal annealing temperature which leads to an acceptable thermoelectric properties is 550°C for CuCrO2:Mg and CuCr0,84Fe0,16O2:Mg thin films and 700°C for CuFeO2:Mg thin film. The optimal thickness is 100 nm for the delafossite with chrome and 300 nm for delafossite with iron. The electrical conductivity of the studied thin films increases with the temperature, while maintaining a positive and constant Seebeck coefficient for the three given compositions that implies a hopping mechanism. The power factor of CuCrO2:Mg, CuFeO2:Mg and CuCr0,84Fe0,16O2:Mg thin films for which the annealing temperature and the thickness were optimized, reached 59 µW.m-1K-2, 84 µW.m-1K-2 and 36 µW.m-1K-2 respectively at 200°C. The microstructural and structural analysis allowed to understand the variation of the power factor with the annealing temperatures and the thicknesses. In particular, they showed that the decrease in the electrical conductivity of the thin films annealed at high temperature is due to concomitant phenomena of film cracking and magnesium segregation. A thermal analysis using modeling with the finite element method has demonstrated that in the case of thin films, the thermal conductivity of the substrate can be substituted for the thermal conductivity of the film in the calculation of figure of merit. The validity of the modified figure of merit ((ZT)* = S2σ/ksubstrate) was given as a function of the film thickness, emissivity and thermal conductivity. The thermal conductivity of CuFeO2:Mg was measured using the 3ω method and it was 4.82 W.m-1k-1 at 25°C which is within the range of validity established for the use of (ZT)*[...]

Des mesures de magnétorésistances locales et non locales dans des monocouches de graphène obtenues par sublimation sur la face silicium du carbure de silicium (SiC) sont présentées dans cette thèse. L’objectif est d’étudier les phénomènes physiques qui apparaissent proche de point de neutralité de charge (dopage faible en trous) dans ces monocouches. Or, celles-ci sont généralement fortement dopées en électrons à cause de l’interaction avec la couche d’interface et le substrat. Des dispositifs en forme de barre de Hall encapsulés par une résine sont utilisés. Le contrôle du niveau de Fermi dans ces dispositifs est réalisé en utilisant la méthode de décharge corona. L’amplitude du désordre est évaluée dans ces monocouches de graphène en : (i) ajustant la courbe de résistivité en fonction du coefficient de Hall obtenue à température ambiante ; (ii) ajustant les courbes de dépendance en température de la densité de Hall pour les échantillons proche de point de neutralité de charge. Toutes ces analyses donnent une amplitude du désordre de l’ordre de (20 ±10) meV. Les échantillons préparés avec un faible dopage en trous sont ensuite étudiés en régime d'effet Hall quantique. Les mesures de magnétorésistances montrent que la résistance de Hall présente un comportement ambipolaire en fonction du champ magnétique. Ce comportement coïncide avec l’apparition d’un maximum local dans la résistance longitudinale. Ces résultats sont expliqués via un modèle de transfert de charge entre régions de différents dopages dans le graphène. Néanmoins, l’origine microscopique de ces régions est mal connue. Finalement, des mesures non locales sont effectuées sur ces mêmes échantillons et montrent l’apparition des résistances non locales importantes dont la valeur peut, dans certains cas, dépasser les résistances longitudinales correspondantes. L'analyse de ces résultats montre que la contribution du courant de spin et des effets thermiques dans l’apparition de ces tensions non locales est négligeable. Cependant, les données expérimentales sont raisonnablement reproduites par un modèle de conduction basé sur des états de bord rétrodiffusés par le "bulk" isolant. / Local and nonlocal magnetoresistances measurements on monolayer graphene grown on the silicon face of silicon carbide (SiC) are reported. The purpose of this work is to understand the physical phenomena appearing close to the charge neutrality point in these monolayers. The first issue to overcome was that graphene is generally strongly doped with electrons due to the interaction with the substrate. The control of the Fermi level has been realised using the corona discharge method. The disorder amplitude has been evaluated in these structures by : (i) fitting the resistivity dependence curve of the Hall coefficient obtained at room temperature; (ii) fitting the temperature dependence of the Hall density for samples that were prepared near the charge neutrality point. All these analyses gave a disorder strength equal to (20 ± 10) meV. It is then shown that for samples with low hole doping, the Hall resistance exhibits an ambipolar behavior as a function of the magnetic field. This behavior is accompanied by the appearance of a local maximum in the longitudinal resistance.This behavior is been explained by a charge transfer model between regions of different doping in graphene. Nevertheless, the microscopic origin of these regions is poorly known. Finally, nonlocal measurements carried out on these samples showed the appearance of important nonlocal resistances which in some cases exceed the corresponding longitudinal resistances. The analysis of these results shows that the contribution of spin current and thermal effects on the occurrence of these nonlocal voltages is neglegible. In contrast, the experimental data are reproduced quite well by a model based on counter-propagating edge states backscattered by the bulk.

Ce travail présente, dans trois systèmes différents, l'étude de nouveaux oxydes à structures incommensurables. Le composé $Ba_6Mn_{24}O_{48}$ ($Ba_{0.25}MnO_2$) possède une structure constituée par une charpente d'octaèdres $MnO_6$ dont l'arrangement définit des tunnels de type rutile, hollandite et des tunnels plus larges appelés "double barrelled". Les phénomènes d'incommensurabilité et de diffusion diffuse rencontrés dans ce composé sont décrits et expliqués par la distribution particulière des baryum dans les tunnels hollandite et "double barrelled". L'existence d'oxydes à structures lamellaires désaccordées est démontrée avec les composés de formulation $A'_{\alpha}[(AO)_{\frac{1+x}{2}}]_n(CoO_2)$. Ils sont construits sur la succession, selon un axe d'empilement, de (n-1) couches [AO] de type $NaCl$ et d'une couche hexagonale d'octaèdres $CoO_6$ joints par les arêtes. La transition entre ces deux couches est assurée par un élément de post-transition A'. Des termes n=2, avec $A'=Tl$ ou $Hg/Pb$ et des termes n=3 avec $A'=Bi$ ont été isolés. Dans les deux cas, le cation $A$ est $Sr$ et/ou $Ca$. Les composés ($Ba_{2-3x}Bi_{3x-}$)($Fe_{2x}Bi_{1-2x}$)$O_{3-\delta}$ ($x\in$[1/3, 1/2]), dérivés de la pérovskite, présentent des structures modulées de symétrie quadratique pour $x>0.4$. En utilisant le formalisme des groupes de superespace, une étude par analyse Rietveld montre que c'est la c\oe xistence sur le m\^{e}me site A pérovskite des cations $Ba$ et $Bi$ qui est responsable du phénomène d'incommensurablité observé. La structure magnétique de ces composés, déterminée par diffraction neutronique, est de type antiferromagnétique avec ferromagnétisme faible.

In this thesis design, optimization, fabrication and performance characterization of MEMS thermoelectric (TE) energy harvesters for harnessing waste heat in mobile systems are presented. As a proof of concept, chromium and nickel are used as the thermoelectric material in the proposed design. The feasibility of the state of the art thermoelectric materials is also discussed. MEMS TE energy harvesters proposed in this study are designed to generate power at relatively lower &Delta / T values. The performance of the MEMS TE energy harvesters was optimized using analytical and 3-D finite element models. An analytical code was used for profiling the electrical power output with varying geometry. The design points with maximum generated power were selected, and the microfabricated thermoelectric energy harvesters were designed accordingly. The fabricated devices are formed on a silicon wafer and composed of Nickel and Chromium thermocouples on SiO2/Si3N4 diaphragms, and Titanium heater and monitor resistors for testing purposes. Microfabrication was followed by the performance characterization of MEMS TE energy harvesters with the conducted tests. For 10 &deg / C temperature difference between the hot and cold junctions (a heat source at 35 &deg / C), the proposed TE energy harvesters are capable of providing 1.1 &micro / W/cm2 power density and 1.71 V voltage. The performance of the thermoelectric generators in general is limited by Carnot cycle efficiency. Nevertheless, the validated practical performance of MEMS TE energy harvesters proposed in this thesis is comparable to other examples in literature. It is anticipated by the calculations that this design will be able to provide the highest thermoelectric efficiency factor (4.04 &micro / W/K2cm2) among the lateral TE energy harvesters if thermoelectric materials having high Seebeck coefficient values (such as p-Si, n-Si, polysilicon, Bi2Te3 etc.) are used. According to the performance results, the MEMS TE energy harvesters can be implemented in mobile systems to convert waste heat into electricity. The fabrication process can be adapted to CMOS with some modifications if needed. The lateral MEMS thermoelectric energy harvesters can also be combined with vibration energy harvesters to realize multi-mode energy scavenging. For prospective study, vertical thermoelectric generator configurations are also discussed in order to further increase the power density generated. The finite element simulations for proposed vertical configurations with air and water convection were completed. The vertical TE generators proposed can supply up to 4.2 mW/cm2 with a heat source at a temperature of 310 K.

Growing need for application of electronics at temperatures beyond their rated limit, (usually > 150 °C) and the non availability of high temperature compatible electronics necessitates thermal management solutions that should be compact, scalable, reliable and be able to work in environments characterized by high temperature (150 -250 °C), mechanical shock and vibrations. In this backdrop the proposed research aims at realization of an adsorption cooling system for evaporator temperatures in the range of 140 °C-150 °C, and condenser temperature in the range of 160 °C-200 °C. Adsorption cooling systems have few moving parts (hence less maintenance issues), and the use of Thermo-Electric (TE) devices to regenerate heat of adsorption in between adsorbent beds enhances the compactness and efficiency of the overall 'ThermoElectric-Adsorption' (TEA) system. The work presented identifies the challenges involved and respective solutions for high temperature application. An experimental set up was fabricated to demonstrate system operation and mathematical models developed to benchmark experimental results. Also, it should be noted that TEA system comprises TE and adsorption chillers. A TE device can be a compact cooler in its own right. Hence a comparison of the performance of TEA and TE cooling systems has also been presented.