Universiẗat, Diss.--Erlangen-Nürnberg, 2007.

The thesis Is concerned with the development of a separately excited DC machine In which gate turn-off thyristor devices with their associated firing and protective circuits are used to provide the static commutation of armature coil current. The developed machine has Its armature winding with 24 tapping points located on the stator and Interconnected In "Lop" configuration. The Initiation of the conduction periods of armature switching devices Is defined by a digital control logic circuit. In conjunction with an Incremental rotary encoder which provides the necessary feedback Information relating to shaft speed and shaft angular position. This Is arranged such that, under normal running conditions of the machine, the axis of the radial field of the armature winding maintains the normal space-quadrature relationship with that of the main field winding, giving the optimal torque angle of 000. Provision Is made, however, within the digital control circuit for controlled departure of the armature switch tapping points from the quadrature axis positions, and the effect of this, In Improving commutation Is Investigated. The effect of Interpoles Is also explored. On the basis of the analysis carried out, a proposal Is made for the future development of the machine employing a reduced number of armature switching devices without the need for Interpole windings. / Electricity Directorate, Ministry of Works, Power and Water, Manama, Bahrain.

The Gate Turn-Off (GTO) Thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor devices. To improve its dynamic performances to meet the increased demand in high-performance high-power applications, a special driving technique, namely unity gain turn-off, is studied. Several innovative approaches, which realize this driving requirement, are proposed, analyzed and experimentally demonstrated in this dissertation. The Emitter Turn-Off Thyristor (ETO) is a new family of high power semiconductor devices that is suitable for megawatt power electronics application. ETOs with voltage and current ratings of 4.0~6.0 kV and 1.0~4.0 kA, have been developed and demonstrated. These power levels are the highest in silicon power devices and are comparable to those of the GTO. Compared to the conventional GTO, the ETO has a much shorter storage time, voltage controlled turn-off capability, and a much larger reverse biased safe operation area (RBSOA). These combined advantages make the ETO based power system simpler in terms of dv/dt snubber, di/dt snubber and over current protection, resulting in significant savings at the system level. Experimental and numerical simulation results that demonstrate the advantages of the ETO are presented. A new family of snubberless turn-off GTO, the Resonant Gate Commutated Thyristor (RGCT) is proposed and investigated. By using a transient high commutation voltage, the RGCT can achieve unity turn-off gain and snubberless turn-off capability even with a relatively high gate loop stray inductance. Therefore conventional GTOs with flexible gate lead can be used to achieve the state-of-the-art performance similar to that of the Integrated Gate Commutated Turn-Off thyristor (IGCT). Detailed current commutation analysis and experimental results are presented. A novel equivalent circuit model for the GTO under the unity gain turn-off is proposed. This model is composed of a step current source, which represents the open-base PNP turn-off behavior, in series with a diode that represents the GTO's gate-cathode junction. This equivalent circuit can be used to analyze the turn-off transient behavior of a system employing this GTO. A new mechanism that dominates the failure of the GTO under the unity gain turn-off condition is identified and analyzed. Innovative hybrid GTO-based devices all have significant gate lead stray inductance. During the turn-off transition, this stray inductor will interact with the turn-off voltage source, the junction capacitance of the GTO's gate-cathode, causing effective current injection into the GTO's emitter junction when the voltage on the device is already high. Design guidelines and solutions for different types of GTO-based hybrid devices are provided. / Ph. D.

For many years, power electronics in the high-power area was performed with extremely slow semiconductor switches. These switches, including the thyristor and the Gate Turn-Off (GTO) thyristor, had the capacity to handle very high voltages and currents but lacked the ability to perform high frequency switching. Low-power converters, such as computer power supplies and low horsepower motor drives, have employed high-frequency switching for years and have benefited from very nice output waveforms, good control dynamic performance, and many other advantages compared to low frequency switching. Recent improvements in high-power semiconductor technology has brought switching performance similar to that of the low-power MOSFETs and IGBTs to the high-power area through the advancement of the IGBT's ratings to create the High Voltage IGBT (HVIGBT) and the development of new GTO-derived devices including the Integrated Gate Commutated Thyristor (IGCT) and the Emitter Turn-Off (ETO) thyristor. These new devices all feature high switching speed and the capability to turn off without the requirement for a turn-off snubber. With these new device technologies the high-power field of power electronics can realize dramatic improvements in the performance of systems for utility applications and motor drives. However, with these high-speed switches come new issues relating to noise, protection, performance of diodes, and thermal management in high-frequency applications. This thesis addresses the application of these new devices, especially the ETO and the IGCT. Examples of each device technology (IGBT, IGCT, and ETO) have been characterized in both their switching performance and conduction loss. The tests performed show how these new devices may be applied to various applications. The switching loss, especially related to turn-off, is the dominant factor in the power dissipation of the high-power switches, so knowledge of these characteristics are very important in the system design. To demonstrate the operation of the ETO, two power converters were constructed. The first was a 100 kW DC/DC converter, which demonstrated the operation of the ETO in a typical building block configuration, the half-bridge. The second system, a 1 MegaVolt-Amp (MVA) three-phase inverter, demonstrated the ETO in an application where the switching frequency and power level were both high. The test results demonstrate the expected characteristics of the high-frequency converters. The development of the ETO's gate driver is described. During the inverter testing, a new failure mode was found involving a parasitic diode within the ETO. This failure mode was analyzed and solutions were proposed. One of the proposed solutions was implemented and there were no more failures of this type. Another possible failure mode regarding a circulating current in an IGCT-based system is also analyzed. Soft-switching techniques can help reduce the switching loss in power semiconductor switches. Several topologies were considered for application in the high-power area, and one was selected for further investigation. A prototype Zero Current Transition (ZCT) circuit was developed using an IGCT as the main switch. The turn-off loss was reduced dramatically through the tested ZCT circuit, and the diode recovery was also alleviated. / Master of Science

M. Tech. Electrical Engineering. / Discusses energy as the basic necessity for the economic development of a country. Many functions necessary to present-day living grind to halt when the supply of energy stops. Energy exists in different forms in nature but the most important form is the electrical energy. Therefore, enhancing power flow in transmission systems is important for efficient power supply because a modern-day society requires a large amount of electrical energy for domestic, commercial and industrial purposes. Among the various means of enhancing power flow in transmission systems with the help of FACTS devices, this research work focussed on the aspect of improving the power system stability. Therefore, efficient supply of electric power to various customer load demands can be achieved when the future power system engineers and researchers carry out nonlinear modelling, bifurcation analysis and control of their system with FACTS devices such as TCSC for power system stability enhancement.

Content of this diploma thesis is project of the digital control design for a thyristor source with GSM communication. Designed for corrosion protection. The work contain design of the whole device from the initial proposals of the electro diagrams up to finished product. It describes the events that arise in corrosion, explains the principle of operating a thyristor as a power switch. It also describes the creation and structure of a simple menu using the STM32 microprocessor. It explains the principle of controlling a source. Next, it deals with controlled rectifiers using a thyristor.

Advancements in the power electronics systems have been directly related to the availability of improved power semiconductor devices. The device performance greatly determines the efficiency, reliability, volume, and cost of the power electronics system. This dissertation is dedicated to develop an advanced high power semiconductor device, the emitter turn-off (ETO) thyristor, which is targeted to improve the limitations of the present high power devices. Major improvements in electrical and mechanical designs of the ETO for high power and high frequency operation are proposed which result in improved snubberless turn-off capability, low conduction loss, and low gate drive power consumption of the new generation ETO. A revolutionary self-power generation method of the ETO is proposed. Different from the conventional high power devices which require the external power input for their gate drivers, ETO achieves complete optically controlled turn-on and turn-off and all the internal power required is self-generated. This advancement will have a major impact to high power converter designs. A novel integrated method to eliminate the dead-time requirement is proposed for ETO. This method not only improves the output waveform quality but also increases the reliability and reduces the cost of the high power PWM voltage source converters. With this unique function, the upper and the lower ETO's within a converter phase leg can receive the ideal complementary (without dead-time) PWM signals and solve shoot-through problems. Method to measure the ETO current and transfer the current information to a PWM signal is proposed. Based on the ETO's built-in current sensor, the over-current protection function of the ETO is designed as well. The experimental results show that the built-in current sensor has a very high precision, and the over-current protection function can effectively protect the ETO during the short circuit faults. In order to improve ETO's turn-off capability, a comprehensive investigation of the turn-off failure mechanism of the ETO was performed. A series of simulations and experiments are carried out to study the ETO turn-off operation. The detail turn-off failure mechanisms are presented. The conditions to cause the ETO failure are addressed. The approaches to improve the ETO's turn-off capability are discussed. / Ph. D.

No description available.

Harmonic domain models have been developed for Thyristor Controller Reactors (TCR) and other power electronic devices. Recently, these models have been extended to describe not just the steady-state harmonic interactions but harmonic transients as well. However, these dynamic models consistently do not incorporate models for controls. On the other hand, for the TCR as a FACTS Controller, dynamic models are available in which only the fundamental frequency component of the Controller is included; excluding harmonic interactions presumes that these do not affect the dynamics of the Controller. This thesis describes the development of a Harmonic State Space (HSS) model of a three phase TCR. As an extended state space description, this model describes the dynamics of the Controller while capturing harmonic interactions. It also includes the effect of switching instant variation which significantly improves the effectiveness of the model and allows the controller feedback characteristics to be included. The result of this model was validated with a purely time-domain simulation in PSCAD/EMTDC. Using the HSS to model a power system with TCR, it is illustrated that harmonic interactions play a significant role in the dynamics of the system. It is observed that for the specific system analysed, the least-damped pole-pair which dominates the dynamics of the system is associated with the 5th harmonic. Failure to include interactions with this specific harmonic produces an inaccurate dynamic description. Preliminary to the development of HSS model, a linearised harmonic domain model of a TCR which establishes the harmonic interactions across the device is also developed. Results of this model are validated with a time-domain simulation. This characterisation paves the way for a reduced harmonic state space model that is used in the HSS model. The principles and procedures established in this thesis can be applied to the development of models for other FACTS Controllers or HVDC links.

A numerical analysis is performed for the three-dimensional, turbulent flow of air in a thyristor valve hall located at the Dorsey Converter Station, owned and operated by Manitoba Hydro. The goal of this analysis was to determine the configurations that result in increased air-side cooling effectiveness in the valve hall. The governing equations are solved using the Computational Fluid Dynamics (CFD) code CFX-5. This computer code uses a finite volume method of solution and is based on a finite element approach for representing the geometry. The effects of inlet and outlet opening geometry, inlet air mass flow rate, and inlet air angle on the thermal performance for the air-side cooling of the thyristor valve hall geometry are examined. / May 2006