This thesis focuses mainly on the techniques to achieve high-performance top-emitting OLEDs, regarding device efficiency and lifetime for both non-inverted and inverted structures. It is thus organized as follows: In Chapter 2, the basic physics of organic semiconductor materials are reviewed, including the electronic properties of organic semiconductor materials, molecular excitations and their electronic transitions etc., which are believed to be critical for understanding of the work. Then, the general device physics of OLEDs are reviewed in detail, which includes almost every important electrical and optical process involved in the device. Finally, techniques and methods used to improve the device performance are summarized, which includes electrical doping of charge carrier transport layers. In Chapter 3, all organic materials, experimental techniques, and characterization methods used in this study are briefly described. In the following Chapter 4, techniques that are used for device optimization of non-inverted top-emitting OLEDs are discussed. Also, the mechanism of light outcoupling enhancement by a capping layer is discussed there. In the last part of Chapter 4, the influence of the optical device structure on the intrinsic quantum yield of the emitters is studied. Chapter 5 is focused on inverted top-emitting OLEDs, which are believed to be better applicable with current mainstream n-type amorphous silicon thin film transistor (TFT) technology. In this Chapter, the organic/metal and metal/organic interfaces are investigated in detail and their influence on device performance is discussed. In Chapter 6, the degradation of top-emitting OLEDs is studied, with a focus on the influence of electrode material and electrode thickness on the lifetime of top-emitting devices.

This thesis focuses mainly on the techniques to achieve high-performance top-emitting OLEDs, regarding device efficiency and lifetime for both non-inverted and inverted structures. It is thus organized as follows: In Chapter 2, the basic physics of organic semiconductor materials are reviewed, including the electronic properties of organic semiconductor materials, molecular excitations and their electronic transitions etc., which are believed to be critical for understanding of the work. Then, the general device physics of OLEDs are reviewed in detail, which includes almost every important electrical and optical process involved in the device. Finally, techniques and methods used to improve the device performance are summarized, which includes electrical doping of charge carrier transport layers. In Chapter 3, all organic materials, experimental techniques, and characterization methods used in this study are briefly described. In the following Chapter 4, techniques that are used for device optimization of non-inverted top-emitting OLEDs are discussed. Also, the mechanism of light outcoupling enhancement by a capping layer is discussed there. In the last part of Chapter 4, the influence of the optical device structure on the intrinsic quantum yield of the emitters is studied. Chapter 5 is focused on inverted top-emitting OLEDs, which are believed to be better applicable with current mainstream n-type amorphous silicon thin film transistor (TFT) technology. In this Chapter, the organic/metal and metal/organic interfaces are investigated in detail and their influence on device performance is discussed. In Chapter 6, the degradation of top-emitting OLEDs is studied, with a focus on the influence of electrode material and electrode thickness on the lifetime of top-emitting devices.