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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
81

Growth characteristics of epitaxial germanium films

Jones, Denny Alan, 1938- January 1962 (has links)
No description available.
82

A design procedure for transistor crystal oscillators

McSpadden, William R., 1931- January 1959 (has links)
No description available.
83

Survey of techniques for improving performance of organic transistors

Chien, Yu-Mo, 1980- January 2007 (has links)
Organic field-effect transistors (OFETs) with region-regular poly(3-hexylthiophene) (rr-P3HT) as active semiconductor were fabricated and characterized. Various methods for improving device performance were investigated. These methods include: the use of dip coating technique (rather than spin coating), thermal annealing, polymer doping with iron chloride (FeCl 3), and stamping of "dry" poly(dimethylsiloxane) (PDMS) stamp before polymer deposition. / Through experimental results, it is clear that thermal annealing increases charge carrier mobility of P3HT OFETs. On average an increase of four times in charge mobility was observed after thermal annealing was performed. Dip coated samples also resulted in higher mobility values than spin coated samples. Highest charge mobility value achieved were was ∼0.02 cm2/Vs for dip coated samples, where as the highest value for spin coated devices was around 6e-3 cm2/Vs. / "Dry" stamping of a PDMS devices yielded devices with higher mobility values by around 100% compared to unstamped counterparts. These devices also exhibited lower parasitic leakage currents. / Devices doped with FeCl3 did not perform very well. It is suspected that it was increased so much that it became impossible to turn off the devices.
84

InP-based heterojunction bipolar transistors for high speed and RF power applications : advanced emitter-base designs

Yi, Changhyun 08 1900 (has links)
No description available.
85

An investigation of tunnel diode-common-base transistor combinations for large gain-bandwidths

Gray, James Stephen 08 1900 (has links)
No description available.
86

Offset reduction using floating-gate devices

Adil, Farhan 05 1900 (has links)
No description available.
87

A transistorized commutator

Robinette, Spurgeon Leon 08 1900 (has links)
No description available.
88

Rapid thermal processing for ULSI technology

Ling, Edmond Tiong Giam January 1988 (has links)
No description available.
89

Three phase current controlled PWM inverter using bipolar transistors / 3 phase current controlled PWM inverter using bipolar transistors.

Salmon, John C. January 1984 (has links)
No description available.
90

Electronic characterization of individual single-walled carbon nanotubes

Wong, Chi-yan, January 2007 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2007. / Also available in print.

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