No description available.

In this thesis, the structural, optical, and electrical properties of wurtzite MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been investigated in dependence on Mg and dopant concentration. Among the transparent conductive oxides (TCOs), ZnO based compounds have gained renewed interest as a transparent electrode for large scale applications such as defroster windows, at panel displays, touch screens, and thin film solar cells due to low material and processing cost, non-toxicity, and suitable physical properties. In general, these applications require transparent electrodes with lowest possible resistivity of rho < 10^-3 Ohmcm and lower [1]. Recently, it has been reported that Ga and Al doped ZnO thin films can be deposited with respective resistivity of 5x10^-5 Ohmcm [2] and 3 x10^-5 Ohmcm [3] which are similar to the data obtained for other practical TCOs, i.e. the resistivity of about 4x 10^-5 Ohmcm for Sn doped In2O3 (ITO) thin films [4]. Moreover, the bandgap of ZnO can be increased by alloying with Mg offering band alignment between transparent electrode and active (or buffer) layer of the device, e.g. Cu(In,Ga)Se2 solar cells [5]. The tunable bandgap of these transparent electrodes can further increase the efficiency of the devices by avoiding energy losses in the interface region of the layers. From this point of view, this work has been aimed to investigate the doping efficiency and limits in transparent conductive (Mg,Zn)O alloys. For this purpose, the samples investigated in this work have been grown by pulsed-laser deposition (PLD) using a novel, continuous composition spread method (CCS). In general, this method allows to grow thin films with lateral composition gradient(s) [6, 7]. All MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been deposited on 2-inch in diameter glass, c- or r-plane sapphire substrates using threefold segmented PLD targets in order to grow thin films with two perpendicular, lateral composition gradients, i.e. the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction [7, 8]. In order to investigate the influence of the temperature, samples grown at different substrate temperatures in the range of 25 to 600 C were investigated. The optical and electrical measurements have been carried out on (5x 5)mm^2 samples that were cut from the CCS wafers along the respective composition gradients, i.e. Mg and Al/Ga contents. Subsequently, physical properties of thin films have been analyzed for a large range of Al/Ga content between 0.5 and 7 at.%, which corresponds to doping concentrations between 2x 10^20 and 3x 10^21 cm^-3, for different Mg contents x(Mg) ranging from 0.01 to 0.1. It has been found that practically the limiting the dopant concentrations is about 2 x10^21 cm^-3. Further, the electrical data suggests, that the compensating intrinsic defect is doubly chargeable hinting to the zinc vacancy (V_Zn) as microscopic origin. Increasing the dopant concentration above 2 x10^21 cm^-3 leads to a degradation of electrical and structural properties [8]. Further, the influence of growth and annealing temperatures on structural, electrical and optical properties of the films has been studied. For that purpose, Al and Ga doped (2.5 at.% = 1x10^21 cm^-3) Mg0.05Zn0.95O thin films have been chosen from CCS samples grown at T_g = (25 - 600) C . For both doping series, the samples grown at higher temperatures exhibit better crystalline quality compared to the samples grown at lower growth temperatures. As a result, samples grown at higher temperatures reveal higher Hall mobility. For the Al-doping series, the highest free charge carrier density of n = 8.2x 10^20 cm^-3 was obtained for an Mg0.05Zn0.95O:Al thin film grown at 200 C, with corresponding Hall mobility of mu = 13.3 cm^2/Vs, a resistivity of rho = 5.7x10^-4 Ohmcm, and optical bandgap of E_g = 3.8 eV. Interestingly, the free charge carrier density of n = (5 - 8) x 10^20 cm^-3 for samples grown with T_g > 300 C is clearly higher than the value of n = 1.25 x 10^20 cm^-3 that was obtained for the high temperature grown sample, i.e. at T_g = 600 C. Furthermore, for all T_g, Al-doped films have a higher doping efficiency than the Ga-doped counterparts. In order to look deeper into the microscopic origin of this behavior, the samples were post-annealed in vacuum at 400 C. Experimental results showed that the free charge carrier density of Al-doped samples first decreased and saturated afterward with increasing annealing time. On the other hand, the free charge carrier density of the Ga-doped samples first slightly increased and saturated with increasing annealing time. For both doping series, the saturation value of n ~ 1 x 10^20 cm^-3 was very close to the data that has been observed for (i) high temperature grown samples and (ii) the solubility limit of Al in ZnO of 0.3 at.% = 1.2x 10^20 cm^-3, that has been determined by Shirouzu et al. for high temperature grown (T_g > 600 C) Al-doped ZnO [9]. Correspondingly, the optical bandgap also changed, i.e. increased (decreased) for Al- (Ga-) doping series, and approached a constant value of 3.5 0 +- 0.1 eV which is explained by generation of acceptor-like compensating defects, and the solubility limit of the dopants. From XRD data, no secondary phases were found for as-grown and post-annealed films. However, the slight improvement of crystalline quality has been observed on post-annealed samples. Further, it has been shown that the growth and annealing temperatures are important as they strongly affect the metastable state of the solid solution that samples grown at low temperature represent. The low solubility limit of the dopants, i.e. 0.3 at.% for Al in ZnO under equilibrium condition, can be increased by preparing samples by non-equilibrium growth techniques [10]. This is also consistent with experimental results of this work that Al- as well as Ga-doped metastable ZnO and (Mg,Zn)O thin films can be prepared with highest possible doping efficiency for the dopant concentration up to 2.5 at.% when growth or annealing temperatures below 400 C are used.

O óxido de índio dopado com estanho é um semicondutor degenerado de alta transparência no espectro visível e alta condutância elétrica. Por suas propriedades, ele é utilizado como eletrodo transparente em diversas aplicações. Algumas destas aplicações exigem que os filmes sejam depositados sobre substratos poliméricos, que degradam em temperaturas acima de 100 °C. Por este motivo, métodos de deposição que utilizam baixas temperaturas são necessários. O objetivo deste trabalho é o desenvolvimento de técnicas de deposição de filmes de óxido de índio dopado com estanho, em baixas temperaturas (< 100 °C), pelo método de magnetron sputtering de rádio fequência. Filmes foram obtidos sobre substratos de silício, vidro e policarbonato, e suas propriedades físicas, elétricas, ópticas, químicas e estruturais foram analisadas por perfilometria, elipsometria, curvas corrente-tensão, prova de quatro pontas, medidas de efeito Hall, difratometria de raios-X e espectrofotometria. Filmes depositados sobre silício e vidro tiveram resistividade elétrica mínima da ordem de 10^-4 Ohm.cm, enquanto a resistividade do filme obtido sobre policarbonato foi da ordem de 10^-3 Ohm.cm. A transmitância óptica média no espectro visível das amostras variou de 66 a 87 %. Do ponto de vista estrutural, as amostras tenderam a apresentar fase amorfa e cristalina, com orientação preferencial ao longo da direção [100]. De modo geral, as amostras obtidas de 75 a 125 W tiveram as melhores propriedades para serem utilizadas em aplicações que exijam eletrodos transparentes, considerando aspectos elétricos e ópticos. / Indium-tin oxide is a degenerate semiconductor that shows high transmittance in the visible region of the spectrum and high electrical conductance. Because of its properties, this material is used as transparent electrode in a wide variety of applications. Some of these applications demand the indium-tin oxide layer to be deposited over polymer substrates, which degrade at temperatures above 100 °C. Because of this degradation problem, deposition methods at low temperatures are needed. The purpose of this work is the development of low temperature (< 100 °C) indium-tin oxide deposition processes by radio frequency magnetron sputtering method. Thin films were deposited over silicon, glass and polycarbonate substrates, and their physical, electrical, optical, chemical and structural properties were analyzed by surface high step meter, ellipsometry, current-voltage curves, four-point probe analysis, Hall effect measurements, X-ray diffractometry and spectrophotometry. Films deposited over silicon and glass substrates showed minimal electrical resistivity in the order of 10^-4 Ohm.cm, while the resistivity of the film obtained over polycarbonate was in the order of 10^-3 Ohm.cm. The average transmittance in the visible spectrum varied over the range 66 to 87 %. According to the structural study, the films present both amorphous and crystalline phases, with crystallites showing preferential orientation along the [100] direction. In general, films deposited with power varying over the range 75 to 125 W showed the best results to be applied as transparent electrodes, considering electrical and optical aspects.

O óxido de índio dopado com estanho é um semicondutor degenerado de alta transparência no espectro visível e alta condutância elétrica. Por suas propriedades, ele é utilizado como eletrodo transparente em diversas aplicações. Algumas destas aplicações exigem que os filmes sejam depositados sobre substratos poliméricos, que degradam em temperaturas acima de 100 °C. Por este motivo, métodos de deposição que utilizam baixas temperaturas são necessários. O objetivo deste trabalho é o desenvolvimento de técnicas de deposição de filmes de óxido de índio dopado com estanho, em baixas temperaturas (< 100 °C), pelo método de magnetron sputtering de rádio fequência. Filmes foram obtidos sobre substratos de silício, vidro e policarbonato, e suas propriedades físicas, elétricas, ópticas, químicas e estruturais foram analisadas por perfilometria, elipsometria, curvas corrente-tensão, prova de quatro pontas, medidas de efeito Hall, difratometria de raios-X e espectrofotometria. Filmes depositados sobre silício e vidro tiveram resistividade elétrica mínima da ordem de 10^-4 Ohm.cm, enquanto a resistividade do filme obtido sobre policarbonato foi da ordem de 10^-3 Ohm.cm. A transmitância óptica média no espectro visível das amostras variou de 66 a 87 %. Do ponto de vista estrutural, as amostras tenderam a apresentar fase amorfa e cristalina, com orientação preferencial ao longo da direção [100]. De modo geral, as amostras obtidas de 75 a 125 W tiveram as melhores propriedades para serem utilizadas em aplicações que exijam eletrodos transparentes, considerando aspectos elétricos e ópticos. / Indium-tin oxide is a degenerate semiconductor that shows high transmittance in the visible region of the spectrum and high electrical conductance. Because of its properties, this material is used as transparent electrode in a wide variety of applications. Some of these applications demand the indium-tin oxide layer to be deposited over polymer substrates, which degrade at temperatures above 100 °C. Because of this degradation problem, deposition methods at low temperatures are needed. The purpose of this work is the development of low temperature (< 100 °C) indium-tin oxide deposition processes by radio frequency magnetron sputtering method. Thin films were deposited over silicon, glass and polycarbonate substrates, and their physical, electrical, optical, chemical and structural properties were analyzed by surface high step meter, ellipsometry, current-voltage curves, four-point probe analysis, Hall effect measurements, X-ray diffractometry and spectrophotometry. Films deposited over silicon and glass substrates showed minimal electrical resistivity in the order of 10^-4 Ohm.cm, while the resistivity of the film obtained over polycarbonate was in the order of 10^-3 Ohm.cm. The average transmittance in the visible spectrum varied over the range 66 to 87 %. According to the structural study, the films present both amorphous and crystalline phases, with crystallites showing preferential orientation along the [100] direction. In general, films deposited with power varying over the range 75 to 125 W showed the best results to be applied as transparent electrodes, considering electrical and optical aspects.

abstract: Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments - air, vacuum and oxygen was done. Electrical and optical characterization was carried out before and after annealing. The degree of reversal in the degradation in electrical properties of the thin films upon annealing in oxygen was assessed by subjecting samples to subsequent vacuum anneals. To further increase the conductivity of the IGZO films, Ag layers of various thicknesses were embedded between two IGZO layers. Optical performance of the multilayer structures was improved by susceptor-assisted microwave annealing and furnace-annealing in oxygen environment without compromising on their electrical conductivity. The post-processing of the films in different environments was used to develop an understanding of mechanisms of carrier generation, transport and optical absorption. This study establishes IGZO as a viable transparent conductor, which can be deposited at room-temperature and processed by thermal and microwave annealing to improve electrical and optical performance for applications in flexible electronics and optoelectronics. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2011

Ce travail porte sur la réalisation d'un micro-écran OLED haute luminance sur silicium. L'efficacité limitée des structures WOLED associées à des filtres colorés est un frein au développement de cette technologie pour des applications dans des dispositifs de type « see-through ». Nous proposons une approche tirant parti de l'effet de microcavité optique présent dans les écrans OLED à émission vers le haut pour générer des couleurs sans filtres. Les modulations de cavité à l'échelle du sous-pixel étant assurées par l'insertion d'oxyde transparent conducteur entre l'anode et l'OLED.L'étude offre selon un raisonnement cohérent de suivre les différentes phases de la réalisation d'un démonstrateur de ce type. Seront abordées dans la première partie les étapes technologiques de structuration de l'oxyde à l'échelle d'un sous-pixel de 16µm². Nous traiterons ensuite du développement d'un empilement OLED tandem utilisant des émetteurs fluorescent et phosphorescents. Une approche par simulation optique sera utilisée pour l'optimisation de cette architecture à un fonctionnement sur microcavité. Puis la discussion autour de la mise en commun des blocs technologiques précédents permettra d'aborder des écueils spécifiques au micro-écran OLED et de proposer des pistes de résolution. / This study focuses on the realization of a high brightness OLED micro-écran on silicon. The limited efficiency of White-OLED combined with color filters prevents the use of this technology in “see-through” applications. We propose a novel approach getting benefits from the optical micro-cavity effect in Top-Emitting OLED to generate colors without using color filters. Cavity modulations at a sub-pixel scale are realized by using a Transparent Conducting Oxide between the anode and the OLED.Following a step-by-step reasoning the work offers to follow all the phases of the realization of a prototype using this principle. In the first part, the technological steps of the processing of oxide cavities with a surface of 16µm² will be discussed. Then we will work on the development of a tandem OLED structure using both fluorescent and phosphorescent emitters optimized for micro-cavities. To this end optical simulation will be used. The two technological blocs will finally be put together to enlighten some issues specific for micro-écran technology and to give some clues to solve them.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / In the present work, we performed a study of the structural, electrical and optical properties of the compound LaCr1-xAlxO3 (x = 0.0, 0.05, 0.5, 0.95 and 1.0) produced by the combustion method. The structural analyzes were performed by X-ray diffraction (XRD) and Rietveld refinement, the electrical measurements using impedance spectroscopy and IV measurements, and optical measurements using UV-Vis spectroscopy. The results of XRD allied to the Rietveld method of refinement indicate that the samples with x = 0.0 and 0.05, have an orthorhombic structure belonging to the space group Pnma (62), and for x = 0.5, 0.95 and 1.0, a rhombohedral structure belonging to the space group R-3c (167), thus taking place a structural transition in the material. The impedance spectroscopy measurements associated to the IV curves show that the samples with higher concentration of Al present higher resistance, and the samples with lower concentration of Al present less resistance. We observe that for high frequencies a decrease of dielectric constant with frequency occurs. In addition, the appearance of only a semicircle establishes the presence of non-Debye type relaxation, where an equivalent circuit composed of two resistors (R1 and R2) and a constant phase element (CPE) were used. By means of the absorption measurements in the ultraviolet to visible region (UV-Vis), we estimated the optical gap of the samples, through the tauc equation, which vary between 3.27 - 3.43 eV. Still, we observed that the increase in Al concentration favors the increase in transmittance in the material. / No presente trabalho, realizamos um estudo das propriedades estruturais, elétricas e ópticas do composto LaCr1-xAlxO3 (x=0,0; 0,05; 0,5; 0,95 e 1,0) produzido pelo método da combustão. As análises estruturais foram realizadas por meio de difração de raios-X (DRX) e refinamento Rietveld, as elétricas por meio de espectroscopia de impedância e medidas IV, e ópticas por meio de espectroscopia de UV-Vis. Os resultados de DRX aliados ao método de refinamento Rietveld indicam que as amostras com x = 0,0 e 0,05, apresentam uma estrutura ortorrômbica pertencente ao grupo espacial Pnma (62), e para x = 0,5; 0,95 e 1,0, uma estrutura romboédrica pertencente ao grupo espacial R-3c (167), ocorrendo assim uma transição estrutural no material. As medidas de espectroscopia de impedância associadas às curvas IV mostram que as amostras com maior concentração de Al apresentam maior resistência, e as amostras com menor concentração de Al apresentam menor resistência. Observamos que para altas frequências ocorre uma diminuição da constante dielétrica com a frequência. Além disso, o aparecimento de apenas um semicírculo estabelece a presença do relaxamento do tipo não-Debye, onde foi utilizado um circuito equivalente composto por duas resistências (R1 e R2), e um elemento de fase constante (CPE). Através das medidas de absorção na região do ultravioleta ao visível (UV-Vis) estimamos o gap óptico das amostras, através da equação de tauc, os quais variam entre 3,27 - 3,43 eV. Além disso, observamos que o aumento da concentração de Al favorece o aumento da transmitância no material. / São Cristóvão, SE

A key to solar cells with lower environmental impact is higher efficiency and reduced material usages. Bifacial solar cells may have a higher efficiency as light can enter from two directions and tandem solar cells may use a larger part of the incoming solar spectrum, increasing the efficiency. However, both these applications require transparent and conducting contacts. This thesis aimed to investigate how suitable the transparent conductive oxides aluminum doped zinc oxide (AZO) and indium doped tin oxide (ITO) are as contacts in bifacial CIGS cells or CIGS/Silicon tandem cells. The contacts must remain stable when CIGS is deposited on top of it, meaning that they have to endure first 500°C and then 600°C in combination with copper, indium, gallium and selenium vapours. A thin layer of AZO topped with ITO and pure ITO films of different thicknesses were deposited by RF- and DC-sputtering, varying the oxygen flow. Opto-electrical characterization showed that the transparency in the infrared was balanced against high conductivity due to a shift in the plasmon peak's position. No great difference was seen between pure ITO samples and AZO/ITO samples, so only the first where further processed. The ITO films were annealed to 500°C in the CIGS deposition chamber, exposed to selenium vapour. The films' sheet resistances dropped drastically, which was mainly attributed to activation of tin donors. ITO produced with low oxygen flows also appeared more crystalline according to x-ray diffraction measurements. Photon absorption in the ITO was used to estimate the current loss in bifacial and tandem applications and graphs with current loss and sheet resistance can be used to select an ITO deposition process. Commercial ITO was exposed to 100s of the CIGS deposition process but only during selenium and gallium vapour. A layer of gallium selenide could be identified on the surface, but the ITO appeared to remain stable. Sodium fluoride pre deposition treatment lowered the samples absorption for all wavelengths compared to non-treated samples.

No description available.

Neste trabalho foram realizados e estudados tratamentos superficiais sobre óxidos transparentes condutivos (TCOs) depositados sobre vidro, cuja aplicação ou finalidade é a montagem de dispositivos poliméricos eletroluminescentes. A principal intenção da utilização destes processos é diminuir a tensão de limiar e também aumentar a luminância desses dispositivos, sem interferir na transmitância original dos filmes. Três diferentes técnicas de tratamentos superficiais foram utilizadas: (a) Plasma de oxigênio; (b) Água-régia e (c) UV-Ozônio. Neste último processo, um reator foi montado utilizando uma lâmpada de vapor de mercúrio a alta pressão (tipo alta intensidade de descarga), sem o bulbo externo para fornecer a disponibilidade de radiação UV para a obtenção de ozônio a partir do ar atmosférico. Este reator com baixo custo e fácil manuseio foi montado para realizar um processo alternativo comparado aos dois processos anteriormente citados (Plasma de oxigênio e Água-Régia) e constitui o principal foco, comparando a partir de resultados experimentais obtidos por dispositivos montados, utilizando diferentes TCOs. Foi possível confirmar que o procedimento a partir do UV-Ozônio é reprodutível, pois pode substituir com vantagens as outras duas técnicas que apresentam custo mais elevado ou que exige manuseio especial. Pela utilização de diferentes períodos de tratamento como a única variável, nas condições estabelecidas durante os experimentos, foi mantida uma amostra sem tratamento para comparação em cada resultado obtido. Em comparação aos outros tratamentos, a técnica de UV-ozônio apresentou reprodutibilidade. Neste caso, verificamos que houve eliminação de contaminantes indesejáveis como carbono e hidrocarbonetos detectadas pela técnica de DRIFT (Diffuse Reflectance Infra-Red Fourier Transformed) e melhor espalhamento de polímero (PEDOT:PSS) sobre a superfície através da técnica de ângulo de contato foi observado. Para os filmes de ITO e FTO o período ótimo foi observado durante 5 minutos e para o ZnO, durante 15 minutos. Os resultados das medições de resistência de folha, espessura e efeito Hall, não revelaram significantes modificações. Revelando que as superfícies foram influenciadas apenas atomicamente ou molecularmente. / In this work superficial treatment on transparent conductive oxides (TCOs) were carried out and studied by application or finality for the assembly of electroluminescent polymeric devices. The mean intention by use of these processes is to decrease the threshold voltage and also increase the luminance of the devices, without interfering in the original TCOs transmittances. Three different treatment techniques were used: (a) oxygen plasma; (b) aqua regia and (c) UV-ozozne. In the he last one, a reactor was assembled using a high-pressure mercury vapor lamp (high intensity discharge lamp type) without outer bulb to provide the available UV radiation to obtain ozone from atmospheric air. This reactor with low cost and easy handle was mounted to accomplish an alternative process compared by other (oxygen plasma and aqua regia) and it has the main focus of this work compared from experimental results obtained by mounted devices using different TCOs. It was possible to confirm that the procedure from the UV-Ozone is reproducible, because it can replaced with advantages the other techniques that have expansive costs or special handling. The use of different treatment times as only variable on the imposed condition in the experiments, a sample was reserved without treatment for comparison during each obtained result. In comparison with other treatments the UV-Ozônio presented reproducibility. In this case was verified the undesirable contaminants eliminated as carbon and hydrocarbon and detected by DRIFT (Diffuse Reflectance Infra-Red Fourier Transformed) technique and better scattering of polymer (PEDOT:PSS) on surface by contact angle was observed. For ITO and FTO films the optimum period was observed during 5 minutes and ZnO during 15 minutes. The measurements results of sheet resistance, thickness and Hall effect revealed no significant changes confirming that the surfaces were influenced only atomically or molecularly only.