Within the master’s thesis there is comparison of different structures of ARC oscillators with respect to their harmonic distortion. Individual blocks of oscillator are analyzed. Attention is paid to choosing and design of suitable ARC filter structure and possibilities of its tuning. Also possibilities of stabilization of amplitude are analyzed. Different types of controlled amplifiers and circuits for controlling of their amplification are discussed. Next captures are focused to designing and simulation of the ARC oscillator. The oscillator can be tuned in the frequency range from 100 Hz to 20 kHz with harmonic distortion smaller than 1%. At the end of the thesis, practical realization of the proposed circuit is described. Also results of the measurement of parameters of the oscillator are given.

Various nanostructured materials display unique and interesting optical properties. Specific nanoscale objects discussed in an experimental perspective in this dissertation include optical metamaterials, surface plasmon sensors, and two-dimensional materials. These nanoscale objects were fabricated, investigated optically, and their applications are assessed. First, one-dimensional magnetic gratings were studied, followed by their two-dimensional analog, the so-called "fishnet." Both were fabricated, characterized, and their properties, such as waveguiding modes, are examined. Interestingly, these devices can exhibit optical magnetism and even negative refraction; however, their general characterization at oblique incidence is challenging due to diffraction. Here, a new method of optical characterization of metamaterials which takes into account diffraction is presented. Next, surface plasmon resonance (SPR) was experimentally used in two schemes, for the first time, to determine the transition layer characteristics between a metal and dielectric. The physics of interfaces, namely the singularity of electric permittivity and how it can be electrically shifted, becomes clearer owing to the extreme sensitivity of SPR detection mechanisms. Finally, ultra-thin two-dimensional semiconducting materials had their radiative lifetime analyzed. Their lifetimes are tuned both by number of atomic layers and applied voltage biasing across the surface, and the changes in lifetime are suspected to be due to quenching or enhancement of non-radiative process rates.

Side-channel attacks have become a realistic threat to the implementations of cryptographic algorithms. By analyzing the unintentional, side-channel leakage, the attacker is able to recover the secret of the target. Recently, a new type of side-channel leakage has been discovered, called far field EM emissions. Unlike attacks based on near field EM emissions or power consumption, the attack based on far field EM emissions is able to extract the secret key from the victim device of several meters distance. However, existing deep-learning attacks based far field EM commonly use a random or grid search method to optimize neural networks’ hyperparameters. Recently, an automated way for deep learning hyperparameter tuning based on Auto- Keras library, called AutoSCA framework, was applied to near-field EM attacks. In this work, we investigate if AutoSCA could help far field EM side-channel attacks. In our experiments, the target is a Bluetooth-5 supported Nordic Semiconductor nRF52832 development kit implementation of Advanced Encryption Standard (AES). Our experiments show that, by using a deep-learning model generated by the AutoSCA framework, we need 485 traces on average to recover a subkey from traces captured at 15 meters distance from the victim device without repeating each encryption. For the same conditions, the state-of-the-art method uses 510 traces. Furthermore, our model contains only 667,433 trainable parameters in total, implying that it requires roughly 9 times less training resources compared to the larger models in the previous work. / Angrepp på sidokanaler har blivit ett realistiskt hot mot implementeringen av kryptografiska algoritmer.Genom att analysera det oavsiktliga läckaget kan angriparen hitta hemligheten bakom målet.Nyligen har en ny typ av sidokanalläckage upptäckts, kallad fjärrfälts EM-utsläpp.Till skillnad från attacker baserade på nära fält EM- utsläpp eller energiförbrukning, kan attacken baserad på yttre fält EM-utsläpp extrahera den hemliga nyckeln från den skadade anordningen på flera meter avstånd.Men befintliga djupinlärningsattacker baserade på långt fält EM använder ofta en slumpmässig sökmetod för att optimera nervnätens hyperparametrar. Nyligen tillämpades ett automatiserat sätt för djupinlärning av hyperparametern baserad på Auto-Keras- bibliotek, AutoSCA- ramverket, vid EM-angrepp nära fältet.I det här arbetet undersöker vi om AutoSCA kan hjälpa till med EM-angrepp.I våra experiment är målet en Bluetooth-5-stödd nordisk semidirigent nR52832- utvecklingsutrustning för avancerad krypteringsstandard (AES).Våra experiment visar att genom att använda en djupinlärningsmodell skapad av AutoSCA-ramverket, behöver vi 485-spår i genomsnitt för att hämta en subnyckel från spår tagna på 15- meters avstånd från offrets apparat utan att upprepa varje kryptering.Under samma förhållanden använder den senaste metoden 510-spår.Dessutom innehåller vår modell bara 667,433-parametrar som totalt kan användas för utbildning, vilket innebär att det krävs ungefär nio gånger mindre utbildningsresurser jämfört med de större modellerna i det tidigare arbetet.

The ability to fabricate semiconductor wafers with spatially selected regions of different bandgap material is required for the fabrication of monolithic photonic integrated circuits (PIC's). Although this subject has been studied for three decades and many semiconductor engineering approaches have been proposed, the problem of achieving reproducible results has constantly challenged scientists and engineers. This concerns not only the techniques relaying on multiple sequential epitaxial growth and selective area epitaxy, but also the conventional quantum well intermixing (QWI) technique that has been investigated as a post-growth approach for bandgap engineering. Among different QWI techniques, those based on the use of different lasers appear to be attractive in the context of high-precision and the potential for cost-effective bandgap engineering. For instance, a tightly focused beam of the infrared (IR) laser could be used for the annealing of small regions of a semiconductor wafer comprising different quantum well (QW) or quantum dot (QD) microstructures. The precision of such an approach in delivering wafers with well defined regions of different bandgap material will depend on the ability to control the laser-induced temperature, dynamics of the heating-cooling process and the ability to take advantage of the bandgap engineering diagnostics. In the frame of this thesis, I have investigated IR laser-induced QWI processes in QW wafers comprising GaAs/A1GaAs and InP/InGaAsP microstructures and in InAs QD microstructures grown on InP substrates. For that purpose, I have designed and set up a 2-laser system for selective area rapid thermal annealing (Laser-RTA) of semiconductor wafers. The advantage of such an approach is that it allows carrying out annealing with heating-cooling rates unattainable with conventional RTA techniques, while a tightly focused beam of one of the IR lasers is used for `spot annealing'. These features have enabled me to introduce a new method for iterative bandgap engineering at selected areas (IBESA) of semiconductor wafers. The method proves the ability to deliver both GaAs and InP based QW/QD wafers with regions of different bandgap energy controlled to better than « 1nm of the spectral emission wavelength. The IBESA technique could be used for tuning the optical characteristics of particular regions of a QW wafer prepared for the fabrication of a PIC. Also, this approach has the potential for tuning the emission wavelength of individual QDs in wafers designed, e.g., for the fabrication of single photon emitters. In the 1st Chapter of the thesis, I provide a short review of the literature on QWI techniques and I introduce the Laser - RTA method. The 2nd Chapter is devoted to the description of the fundamental processes related to the absorption of laser light in semiconductors. I also discuss the results of the finite element method applied for modeling and semi-quantitative description of the Laser - RTA process. Details of the experimental setup and developed procedures are provided in the 3rd Chapter. The results concerning direct bandgap engineering and iterative bandgap engineering are discussed in the 4th and 5th Chapters, respectively.

No description available.

La miniaturisation d’antenne est un défi important, en particulier en bande VHF où les longueurs d’onde sont grandes. Parmi les différentes techniques rencontrées dans la littérature, une approche théorique originale repose sur l’utilisation de la résonance électrostatique de sphères sub-longueur d’onde de permittivité négative (ENG pour Epsilon NeGative). L’implémentation pratique de cette solution en considérant une décharge plasma comme milieu ENG est étudiée dans ces travaux de thèse. Le plasma laisse entrevoir des potentialités intéressantes pour ce type d’antennes miniatures comme la furtivité et la reconfigurabilité en fréquence. Dans un premier temps, différents modèles analytiques sont développés afin étudier le comportement électromagnétique de petites sphères réalistes de plasma. Ces modèles permettent par ailleurs la construction de schémas numériques précis et adaptés aux simulateurs électromagnétiques commerciaux. Dans un second temps, un prototype fonctionnel est méthodiquement conçu. La solution proposée permet l’intégration du système d’excitation de la décharge plasma au sein de l’antenne sans en perturber son fonctionnement nominal. Ce prototype permet la caractérisation des paramètres plasma de la décharge et du comportement électromagnétique du résonateur sphérique à plasma. Enfin, un travail annexe d’intégration de décharges plasma dans des circuits planaires en technologie micro-ruban est présenté. Les conceptions, modélisations et caractérisations expérimentales de ces résonateurs planaires permettent de mettre en évidence les capacités du plasma pour leur accordabilité en fréquence. / Antenna miniaturisation is a major issue, especially in the VHF band whose wavelengths are significant. Amongst the solution in the litterature, a recent theoretical technique relies upon the electrostatic resonance of negative permittivity (ENG) subwavelength spheres. In this work, the use of a plasma discharge as ENG medium is under consideration. Plasma indeed suggests new potentialities for this kind of small antennas, such as stealth and frequency agility. Firstly, several analytical models are developed to study the electromagnetic response of subwavelength realistic plasma spheres. These models further allow to derive accurate numerical representations that fit commercial electromagnetic solvers. A working prototype that comprises a plasma ignition system within the antenna structure without altering its operation is then designed. It is used to both characterize the plasma discharge and the electromagnetic behavior of the plasma spherical resonator. Finally, this work is extended to the case of planar circuits by integrating a plasma discharge inside microstrip resonators. The design, the modeling and the experimental studies of these resonators highlight the ability of the plasma to tune the resonant frequency.

La technologie NFC (Near Field Communication) est une nouvelle technique de communication basée sur la technologie RFID (Radio-Fréquence IDentification). La NFC utilise le couplage magnétique entre deux antennes afin de transférer les données et / ou l'énergie entre deux dispositifs électroniques. Elle exploite la fréquence de 13,56 MHz. En raison de la large gamme de dispositifs et d'applications, une définition de la géométrie de l'antenne et de ses paramètres électriques associés est très difficile. En effet, chaque dispositif présente des caractéristiques physiques différentes. En revanche, le circuit intégré (CI) de contrôle NFC est générique et indépendant d'une antenne où d'un dispositif. C'est pourquoi, chaque intégrateur associe le circuit intégré NFC avec une antenne pour chaque dispositif. Or le module de transmission du système NFC nécessite une bonne adaptation de l'antenne à son circuit intégré (IC). Actuellement, cette adaptation est effectuée à la main pour chaque dispositif selon un processus itératif chronophage. En outre, l'adaptation est effectuée une seule fois au moment de la conception du dispositif, quel que soit le mode de communication (lecteur, carte ou peer-to-peer) et à vide c'est-à-dire sans considérer l'influence du dispositif secondaire. Dans ce manuscrit, nous proposons une description détaillée des performances électriques des systèmes NFC. Ensuite un modèle électrique analytique complet et précis de l'antenne NFC est proposé. Enfin, nous développons une nouvelle technique d'adaptation automatique d'impédance afin d'optimiser les performances électriques dans la phase d'émission en termes de transfert d'énergie entre le lecteur et le transpondeur. / Near Field Communication (NFC) is a standardized communication technology derived from Radio Frequency Identification (RFID). NFC uses magnetic induction between two antennas in order to transfer data and/or energy between two electronic devices. NFC operating frequency is 13.56 MHz.Due to the wide range of devices and applications, a predefinition of antenna geometry and corresponding electrical parameters is difficult. In fact, each device shows different antennaphysical characteristics ; On the Other hand, the NFC control integrated circuit (IC) is generic and does not depend on antenna nor a device. Therefore, each integrator associates the NFC IC with a specific antenna for each device. Current NFC transmission modules require the antenna circuitry to be matched with the integrated circuit. Nowadays, the matching is performed manually using a time consuming iterative procedure for each device. Moreover, the matchingcan be done only once at the device design level, regardless of the communication mode (reader, card or peer-to-peer) and regardless of the secondary device influence on the primary antenna characteristics.In this manuscript, we propose a detailed description of the electrical performances of NFC Systems. Then an accurate and complete analytical electrical model of NFC antennas is proposed.Finally, we develop a new technic of automatic adaptation of the matching network in order to optimize the electrical performances in the transmission phase in terms of energy transfer from the reader to the transponder.

Os materiais CaWO4:TR3+, CaMoO4:TR3+, Ca(MO4):TR3+ (TR: Pr3+, Sm3+, Eu3+, Tb3+ e Dy3+) (M: W e Mo) foram preparados pelo método da coprecipitação acoplado ao método ultrassônico a fim de estudar suas aplicações em materiais fotônicos aplicados em LEDs. Após a reação de precipitação, o material foi filtrado sob pressão reduzida, lavado com água destilada, seco e armazenado em dessecador a vácuo. Esses materiais sem tratamento térmico se mostraram como pós brancos, de aspecto uniforme, cristalinos, não higroscópicos e insolúveis em solventes polares e apolares. Após a síntese, os materiais foram submetidos a tratamento térmico em forno resistivo (1000 °C / 3 h) e sob radiação micro-ondas (5 min; ~1100 °C e 22 min; ~1200 °C). Este método oferece muitas vantagens se comparado aos métodos convencionais, tais como: método simples de operação, baixo custo, tempo curto de síntese e procedimento ambientalmente correto. Os materiais tratados sob altas temperaturas foram comparados com aqueles materiais sem tratamento térmico. Os materiais foram caracterizados pelas seguintes técnicas: espectroscopia de absorção no infravermelho (IV), análise termogravimetria (TG), difratometria de raios X - método do pó (DRX), microscopia eletrônica de varredura (MEV) e energia dispersiva de raios X (EDS). Os picos dentro do difratograma de raios X foram indexados na estrutura tetragonal scheelita I41/a. As propriedades fotoluminescentes dos compostos Ca(MO4) (M: W e Mo) dopados com Dy3+ e codopados com Eu3+ foram investigadas com base nas transições intraconfiguracionais 4f dos íons TR3+. Os espectros de excitação apresentaram bandas largas na região do UV, atribuídas às bandas de transferência de carga LMCT O→W; O→Mo e O→Eu3+. Os espectros de excitação dos fósforos dopados com Tb3+ apresentaram as bandas de absorção largas atribuídas à transferência de carga LMCT O→W6+ (5d) e O→Mo6+ (4d) sobrepostas às transições 4f8→4f75d1 do íon Tb3+ e também picos finos oriundos das transições 4f referentes aos íons Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8) e Dy3+ (4f9). O material CaWO4:Eu3+ submetido a tratamento térmico em forno resistivo (1000 °C / 3 h) apresentou o fenômeno da luminescência persistente de cor vermelha. O material triplamente dopado CaWO4:Eu3+,Tb3+,Dy3+ apresentou cores ajustáveis, indo do branco quente ao branco frio, com grande potencial para aplicação em materiais fotônicos para iluminação no estado sólido. Também, os materiais CaWO4:Eu3+,Tb3+,Dy3+ e Ca(MO4):Dy3+,Eu3+ (M: W e Mo) foram montados a base de um polímero óptico de silicone e utilizando um LED de GaN de alta potência, gerando luz branca fria e quente de altas intensidades. As coordenadas CIE (Commission Internationale l\'Eclairage) sugerem emissões multicolores dos sistemas dopados com diferentes íons TR: Pr3+, Sm3+, Eu3+, Tb3+, Dy3+. Esses materiais se mostraram promissores em aplicação de materiais de iluminação do estado sólido, com a vantagem de serem preparados de forma rápida, em poucas etapas, com alto rendimento e serem ambientalmente amigáveis. / The materials CaWO4:TR3+, CaMoO4:TR3+, Ca(MO4):TR3+ (TR: Pr3+, Sm3+, Eu3+, Tb3+ e Dy3+) (M: W and Mo) were prepared by the coprecipitation and ultrasonic method in order to study their applications in photonic materials applied in LEDs. After the precipitation reaction, the material was filtered under reduced pressure, washed with distilled water, dried and stored in vacuum desiccator. These as prepared materials were shown to be white powders, uniform in appearance, crystalline, non-hygroscopic and insoluble in polar and apolar solvents. After the synthesis the materials were submitted to thermal treatment in resistive furnace (1000 °C / 3 h) and also under microwave radiation (5 min; 1100 °C e 22 min; 1200 °C). This method offers many advantages compared to conventional methods, such as: simple operation method, low cost, brief synthesis time and environmentally correct procedure. The materials treated under high temperatures were compared with those materials without heat treatment. In the characterization of these phosphors, the following techniques were used: infrared (IR) absorption spectroscopy, thermogravimetric (TG) analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction peaks were indexed in the scheelite tetragonal structure. The photoluminescent properties of the compounds Ca(MO4) (M: W and Mo) Dy3+ doped and Eu3+ codoped were investigated based on the intraconfiguration transitions 4f of the TR3+ ions. Excitation spectra showed broad bands in the UV region attributed to the LMCT O → W charge transfer bands; O → Mo and O Eu3+. The excitation spectra of the phosphors doped with Tb3+ showed the wide absorption bands attributed to the charge transfer LMCT O2- (2p)W6+ (5d) and O2-(2p)Mo6+ (4d) overlapping the transitions 4f8→4f75d1 of Tb3+ ion and also fine peaks originating from the 4f transitions referring to ions Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8) and Dy3+ (4f9). The CaWO4:Eu3+ material submitted to thermal treatment in a resistive oven (1000 °C / 3 h) exhibited the phenomenon of persistent red color luminescence. The triply-doped CaWO4:Eu3+,Tb3+,Dy3+ showed color matching, ranging from warm white to cool white, promising to be an excellent material to be applied in photonic materials for solid state lighting. Also, the materials CaWO4:Eu3+,Tb3+,Dy3+ and Ca(MO4):Dy3+,Eu3+ (M: W and Mo) were assembled on the basis of a silicone optical polymer and using a high power GaN LED, generating warm white and cold white light of high intensities. The CIE (Commission Internationale l\'Eclairage) coordinates suggest multicolored emissions of multicolor systems doped with various TR3+ ions: TR3+: Pr3+, Sm3+, Eu3+, Tb3+, Dy3+. These materials have proven to be promising in the application of solid state lighting materials, with the advantage of being quickly prepared, in a few steps, high performance and environmentally friendly.

Os materiais CaWO4:TR3+, CaMoO4:TR3+, Ca(MO4):TR3+ (TR: Pr3+, Sm3+, Eu3+, Tb3+ e Dy3+) (M: W e Mo) foram preparados pelo método da coprecipitação acoplado ao método ultrassônico a fim de estudar suas aplicações em materiais fotônicos aplicados em LEDs. Após a reação de precipitação, o material foi filtrado sob pressão reduzida, lavado com água destilada, seco e armazenado em dessecador a vácuo. Esses materiais sem tratamento térmico se mostraram como pós brancos, de aspecto uniforme, cristalinos, não higroscópicos e insolúveis em solventes polares e apolares. Após a síntese, os materiais foram submetidos a tratamento térmico em forno resistivo (1000 °C / 3 h) e sob radiação micro-ondas (5 min; ~1100 °C e 22 min; ~1200 °C). Este método oferece muitas vantagens se comparado aos métodos convencionais, tais como: método simples de operação, baixo custo, tempo curto de síntese e procedimento ambientalmente correto. Os materiais tratados sob altas temperaturas foram comparados com aqueles materiais sem tratamento térmico. Os materiais foram caracterizados pelas seguintes técnicas: espectroscopia de absorção no infravermelho (IV), análise termogravimetria (TG), difratometria de raios X - método do pó (DRX), microscopia eletrônica de varredura (MEV) e energia dispersiva de raios X (EDS). Os picos dentro do difratograma de raios X foram indexados na estrutura tetragonal scheelita I41/a. As propriedades fotoluminescentes dos compostos Ca(MO4) (M: W e Mo) dopados com Dy3+ e codopados com Eu3+ foram investigadas com base nas transições intraconfiguracionais 4f dos íons TR3+. Os espectros de excitação apresentaram bandas largas na região do UV, atribuídas às bandas de transferência de carga LMCT O→W; O→Mo e O→Eu3+. Os espectros de excitação dos fósforos dopados com Tb3+ apresentaram as bandas de absorção largas atribuídas à transferência de carga LMCT O→W6+ (5d) e O→Mo6+ (4d) sobrepostas às transições 4f8→4f75d1 do íon Tb3+ e também picos finos oriundos das transições 4f referentes aos íons Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8) e Dy3+ (4f9). O material CaWO4:Eu3+ submetido a tratamento térmico em forno resistivo (1000 °C / 3 h) apresentou o fenômeno da luminescência persistente de cor vermelha. O material triplamente dopado CaWO4:Eu3+,Tb3+,Dy3+ apresentou cores ajustáveis, indo do branco quente ao branco frio, com grande potencial para aplicação em materiais fotônicos para iluminação no estado sólido. Também, os materiais CaWO4:Eu3+,Tb3+,Dy3+ e Ca(MO4):Dy3+,Eu3+ (M: W e Mo) foram montados a base de um polímero óptico de silicone e utilizando um LED de GaN de alta potência, gerando luz branca fria e quente de altas intensidades. As coordenadas CIE (Commission Internationale l\'Eclairage) sugerem emissões multicolores dos sistemas dopados com diferentes íons TR: Pr3+, Sm3+, Eu3+, Tb3+, Dy3+. Esses materiais se mostraram promissores em aplicação de materiais de iluminação do estado sólido, com a vantagem de serem preparados de forma rápida, em poucas etapas, com alto rendimento e serem ambientalmente amigáveis. / The materials CaWO4:TR3+, CaMoO4:TR3+, Ca(MO4):TR3+ (TR: Pr3+, Sm3+, Eu3+, Tb3+ e Dy3+) (M: W and Mo) were prepared by the coprecipitation and ultrasonic method in order to study their applications in photonic materials applied in LEDs. After the precipitation reaction, the material was filtered under reduced pressure, washed with distilled water, dried and stored in vacuum desiccator. These as prepared materials were shown to be white powders, uniform in appearance, crystalline, non-hygroscopic and insoluble in polar and apolar solvents. After the synthesis the materials were submitted to thermal treatment in resistive furnace (1000 °C / 3 h) and also under microwave radiation (5 min; 1100 °C e 22 min; 1200 °C). This method offers many advantages compared to conventional methods, such as: simple operation method, low cost, brief synthesis time and environmentally correct procedure. The materials treated under high temperatures were compared with those materials without heat treatment. In the characterization of these phosphors, the following techniques were used: infrared (IR) absorption spectroscopy, thermogravimetric (TG) analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction peaks were indexed in the scheelite tetragonal structure. The photoluminescent properties of the compounds Ca(MO4) (M: W and Mo) Dy3+ doped and Eu3+ codoped were investigated based on the intraconfiguration transitions 4f of the TR3+ ions. Excitation spectra showed broad bands in the UV region attributed to the LMCT O → W charge transfer bands; O → Mo and O Eu3+. The excitation spectra of the phosphors doped with Tb3+ showed the wide absorption bands attributed to the charge transfer LMCT O2- (2p)W6+ (5d) and O2-(2p)Mo6+ (4d) overlapping the transitions 4f8→4f75d1 of Tb3+ ion and also fine peaks originating from the 4f transitions referring to ions Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8) and Dy3+ (4f9). The CaWO4:Eu3+ material submitted to thermal treatment in a resistive oven (1000 °C / 3 h) exhibited the phenomenon of persistent red color luminescence. The triply-doped CaWO4:Eu3+,Tb3+,Dy3+ showed color matching, ranging from warm white to cool white, promising to be an excellent material to be applied in photonic materials for solid state lighting. Also, the materials CaWO4:Eu3+,Tb3+,Dy3+ and Ca(MO4):Dy3+,Eu3+ (M: W and Mo) were assembled on the basis of a silicone optical polymer and using a high power GaN LED, generating warm white and cold white light of high intensities. The CIE (Commission Internationale l\'Eclairage) coordinates suggest multicolored emissions of multicolor systems doped with various TR3+ ions: TR3+: Pr3+, Sm3+, Eu3+, Tb3+, Dy3+. These materials have proven to be promising in the application of solid state lighting materials, with the advantage of being quickly prepared, in a few steps, high performance and environmentally friendly.

A transferência de energia sem fio (WPT) rege um importante papel no carregamento de aparelhos remotos. Em um acoplamento indutivo ressonante há várias topologias de sistemas WPT que podem ser implementados para realizar a transferência de energia. Neste trabalho é utilizado uma topologia que utiliza quatro capacitores de compensação para realizar o ajuste da potência entregue a carga, onde estes capacitores são calculados através das fixações dos demais parâmetros do circuito elétrico. Quando o sistema WPT é projetado, uma distância fixa entre as bobinas é almejada, todavia há incertezas e movimentos que podem provocar a alteração desta distância. Há várias técnicas na literatura que buscam realizar a sintonia do acoplamento indutivo para compensar estes desalinhamentos gerado entre as bobinas. Este trabalho apresenta um método multivariável para maximização da potência entregue a carga em um sistema de transferência sem fio. O método proposto utiliza os conceitos de um capacitor variável e a variação de frequência a fim de variar a potência entregue a carga. Os resultados experimentais obtidos para os fatores de acoplamento magnético k > 0;3 mostraram que controlando a frequência e uma capacitância da rede de compensação o desempenho do sistema é melhor que os casos onde apenas uma dessas variáveis é controlada. / Wireless power transfer (WPT) plays an important rule in charging remote devices. In a resonant inductive coupling there are several topologies of WPT systems that can be implemented to perform the energy transfer. In this work, a topology is used that uses four capacitors of compensation to realize the adjustment of the power delivered to load, where these capacitors are calculated through the xations of the other parameters of the electric circuit. When the WPT system is designed, a xed distance between coils is desired, however there are uncertainties and movements that may cause this distance to change. There are several techniques in the literature that seek to realize the tuning of the inductive coupling to compensate for these misalignments generated between the coils. This work presents a multivariable method to maximize the power delivered to the load in a wireless transfer system. The proposed method uses the concepts of a variable capacitor and the frequency variation in order to vary the power delivered to the load. The experimental results obtained for the magnetic coupling factors k > 0:3 showed that controlling the frequency and capacitance of the compensation network system performance is better than the cases where only one of these variables is controlled.