Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.

Durch Multiskalensimulationen wird der Ladungstransport in nanodrahtbasierten Schottky-Barrieren-Feldeffekt-Transistoren im Materialsystem Ni2Si/Si untersucht. Die Bedingungen an die Genauigkeit der verwendeten Eingangsparameter werden bestimmt und Vorhersagen über optimale Material- und Geräteparameter werden getroffen. Es wird die Frage beantwortet, ob die Bestimmung von physikalischen Parametern aus einzelnen gemessenen Strom-Spannungs-Kennlinie möglich ist. Der Feldeffekt wird durch Berechnungen auf Basis der Finiten-Elemente-Methode und die resultierenden Stromflüsse durch ein quantenmechanisches Transportmodell ermittelt. In der Untersuchung der geometrischen Eingangsparameter wird gezeigt, dass bis auf den Radius des Nanodrahtes die in einem Experiment zu erwartenden Messfehler keinen drastischen Einfluss auf die Strom-Spannungs-Kennlinie haben. Signifikant ist hingegen der Einfluss der Temperatur, der effektiven Ladungsträgermassen und der Höhe der Schottky-Barriere. Da diese drei Eingangsparameter des betrachteten Systems mit relativ großen Ungenauigkeiten behaftet sind, ist die Bestimmung von physikalischen Parametern aus einzelnen gemessenen Strom-Spannungs-Kennlinien auf die erhoffte Weise nicht möglich. Die Arbeit zeigt auch, dass bereits moderate Veränderungen der Arbeitstemperatur einen bedeutenden Einfluss auf die Strom-Spannungs-Kennlinie haben. Für die Konstruktion von Transistoren mit hoher Stromdichte kann anhand der ermittelten Daten die Verkleinerung der aktiven Region durch Oxidation vorgeschlagen werden.:Kurzfassung/Abstract I Verwendete Symbole IV Verwendete Parameter VI Verwendete Abkürzungen VII 1 Motivation 8 2 Grundlagen 9 2.1 Modellbildung und Simulation 9 2.2 Schottky-Diode 10 2.3 Feldeffekt-Transistor 12 2.4 Feldeffekt-Transistor auf der Basis von Silizium-Nanodrähten 13 3 Methoden 17 3.1 Simulationsmodell 17 3.2 Finite-Elemente-Methode 20 3.3 Landauer-Büttiker-Formalismus 21 3.4 Hamiltonoperator 22 3.5 Transmissionsfunktion 23 3.6 Büttiker Sonde 24 4 Ergebnisse und Diskussion 26 4.1 Implementierung des Simulationsprogrammes 26 4.2 Berechnung der Basis-Strom-Spannungs-Kennlinie 31 4.3 Wahl der Simulationsparameter 35 4.4 Abhängigkeit von geometrischen Parametern 41 4.5 Abhängigkeit von physikalischen Parametern 49 5 Zusammenfassung, Schlussfolgerungen und Ausblick 55 Abbildungsverzeichnis 59 Literatur 62 / Charge transport in nanowire-based Schottky-barrier field-effect transistors in the material system Ni2Si/Si is examined by multi-scale simulations. The requirements for the accuracy of the input parameters are determined and predictions about optimum material and device parameters are made. The question is answered, whether the determination of physical parameters from individual measured current-voltage curves is possible? The field effect is described by calculations based on the finite element method and the resulting currents are calculated with a quantum mechanical transport model. In the study of the geometric input parameters it is shown that experimental uncertainties do not drastically affect the current-voltage characteristic, except from the nanowire radius. However, significant is the influence of the temperature, the effective charge carrier mass and the height of the Schottky-barrier. Since these three input parameters are known only with low experimental accuracy for the considered system, the determination of physical parameters from individual measured current-voltage curves is not possible in the expected way. The results also show that moderate changes of the working temperature have a significant influence on the current-voltage characteristic. For the construction of transistors with high current density the reduction of the active region by oxidation is proposed.:Kurzfassung/Abstract I Verwendete Symbole IV Verwendete Parameter VI Verwendete Abkürzungen VII 1 Motivation 8 2 Grundlagen 9 2.1 Modellbildung und Simulation 9 2.2 Schottky-Diode 10 2.3 Feldeffekt-Transistor 12 2.4 Feldeffekt-Transistor auf der Basis von Silizium-Nanodrähten 13 3 Methoden 17 3.1 Simulationsmodell 17 3.2 Finite-Elemente-Methode 20 3.3 Landauer-Büttiker-Formalismus 21 3.4 Hamiltonoperator 22 3.5 Transmissionsfunktion 23 3.6 Büttiker Sonde 24 4 Ergebnisse und Diskussion 26 4.1 Implementierung des Simulationsprogrammes 26 4.2 Berechnung der Basis-Strom-Spannungs-Kennlinie 31 4.3 Wahl der Simulationsparameter 35 4.4 Abhängigkeit von geometrischen Parametern 41 4.5 Abhängigkeit von physikalischen Parametern 49 5 Zusammenfassung, Schlussfolgerungen und Ausblick 55 Abbildungsverzeichnis 59 Literatur 62

Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information processing device after a tuning of their interaction energies. In this work, GaAs/AlGaAs QDs with low surface densities, high optical quality and widely tuneable emission wavelength are demonstrated, by infilling nanoholes fabricated by droplet etching epitaxy with different GaAs amounts. A tuning over a spectral range exceeding 10 meV is obtained by inducing strain in the dot layer. These results allow a fine tuning of the QD emission to the rubidium absorption lines, increasing the yield of single photons that can be used as hybrid semiconductor-atomic-interface. By embedding InGaAs/GaAs QDs into diode-like nanomembranes integrated onto piezoelectric actuators, the first device allowing the QD emission properties to be engineered by large electroelastic fields is presented. The two external fields reshape the QD electronic properties and allow the universal recovery of the QD symmetry and the generation of entangled photons, featuring the highest degree of entanglement reported to date for QD-based photon sources. A method for controlling the lateral QDM formation over randomly distributed nanoholes, created by droplet etching epitaxy, is demonstrated by depositing a thin GaAs buffer over the nanoholes. The effect on the nanohole occupancy of the growth parameters, such as InAs amount, substrate temperature and arsenic overpressure, is investigated as well. The QD pairs show good optical quality and selective etching post-growth is used for a better characterisation of the system. For the first time, the active tuning of the hole tunnelling rates in vertically aligned InGaAs/GaAs QDM is demonstrated, by the simultaneous application of electric and strain fields, optimising the device concept developed for the single QDs. This result is relevant for the creation and control of entangled states in optically active QDs. The modification of the electronic properties of QDMs, obtained by the combination of the two external fields, may enable controlled quantum operations.