Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and p-MOSFET’s on those two structures respectively. Device characteristics are presented. The devices show enhancement on both electron and hole mobilities. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3671 |
| Date | 01 1900 |
| Creators | Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L., Nayfeh, Hasan, Pitera, Arthur J., Hoyt, Judy L., Fitzgerald, Eugene A., Antoniadis, Dimitri A. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 432824 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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