Spelling suggestions: "subject:"[een] 2D MATERIALS"" "subject:"[enn] 2D MATERIALS""
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Van der Waals heterostructures : fabrication, mechanical and electronic propertiesKhestanova, Ekaterina January 2018 (has links)
The fast progress in the exploration of 2D materials such as graphene became possible due to development of fabrication techniques that allowed these materials to be protected from e.g. undesirable doping and gave rise to new functionalities realized within van der Waals heterostructures. Attracted by van der Waals interaction the constituent layers of such heterostructures preserve their exceptional electronic quality and for example in graphene allow for high electron mobility to be achieved. However, the studies of atomically thin layers such as NbSe2 that exhibit metallic behavior have been impeded by their reactivity and hence oxidation during exposure to ambient or oxidizing agents such as solvents. In this thesis, the existing heterostructure assembly technique was improved by the introduction of exfoliation and re-stacking by a fully motorized system placed in an inert atmosphere. This approach allowed us to overcome the problem of environmental degradation and create Hall bars and planar tunnel junctions from atomically thin superconducting NbSe2. Furthermore, this versatile approach allowed us to study the thickness dependence of the normal and superconducting state transport properties of NbSe2, uncovering the reduction of the superconducting energy gap and transition temperature in the thinnest samples. On the other hand, 2D materials being just 1-3 atoms thick represent an ultimate example of a membrane - thin but laterally extended object. Consisting of such atomically thin membranes the van der Waals heterostructures can be used for purposes other than the studies of electronic transport. In this work, ubiquitous bubbles occurring during van der Waals heterostructure assembly are employed as a tool to explore 2D materials' mechanical properties and mutual adhesion. This allowed us to measure Young's modulus of graphene and other 2D materials under 1-2% strain and deduce the internal pressure that can reach up to 1 GPa in sub-nanometer size bubbles.
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Magnetotransport in graphene and related two-dimensional systemsHuang, Nathaniel Jian January 2016 (has links)
This thesis describes studies on two-dimensional electron gases (2DEG) in graphene and related 2D systems. Magnetotransport investigations specifically in graphene and its bilayer system are demonstrated in detail, while the experimental techniques presented in this thesis are widely applicable to a large variety of other 2D materials. Chapter 1 gives an introduction and motivation for the principal topic presented in this thesis, with a general introduction to carbon nano-materials and an overview of the current state of graphene-related research and technological development (RTD). Chapter 2 establishes a basic theoretical framework which is essential for interpreting the results presented in this thesis, starting with the crystal and electronic band structures of graphene and its bilayer, followed by high magnetic fields effects on transport properties in these 2D systems. Chapter 3 details the experimental methods directly related to the presented work. The next three chapters report experimental results of three specific magnetotransport studies. Chapter 4 reports the disorder effects on epitaxial graphene in the vicinity of the Dirac point. Quadratic increases of carrier densities with temperature are found to be due to intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. It is also shown that the minimum conductivity increases with increasing disorder strength, in good agreement with quantum-mechanical numerical calculations. Chapter 5 reports measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to a magnetic field dependent charge transfer process from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels this process is modelled in excellent agreement with experimental results. In Chapter 6, energy relaxation of hot carriers in graphene bilayer systems is investigated from measurements on Shubnikovde Haas oscillations and weak localisation. The hot-electron energy loss rate follows the predicted T<sup>4</sup> power-law at carrier temperatures from 1.4 up to about 100 K, due to electron-acoustic phonon interactions. Comparisons are made between graphene monolayer and bilayer systems and a much stronger carrier density dependence of the energy loss rate is found in the bilayer system. This thesis concludes with a summary of the most important findings of the topics that have been discussed. The significance and limitations of the present research are listed. Some suggestions and outlook are given for possible improvements and interesting areas of future research and development.
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Hétérostructures de van der Waals à base de Nitrure / Nitride based van der Waals heterostructuresHenck, Hugo 21 September 2017 (has links)
Le sujet de cette thèse est à l’interface entre l’étude de composés à base de nitrure et des structures émergeantes formées par les matériaux bidimensionnels (2D) d’épaisseur atomique. Ce travail se consacre sur l’hybridation des propriétés électriques et optiques des semi-conducteurs à larges bandes interdites que sont les nitrures et des performances mécaniques, électriques et optiques des matériaux lamellaires, récemment isolé à l’échelle d’un plan atomique, qui sont aujourd’hui considérées avec attention aux regards de futures applications et d’études plus fondamentales. En particulier, une étude des propriétés électroniques, optiques et structurelles d’hétérostructures composées de plusieurs matériaux lamellaires et d’interfaces entre matériaux 2D et 3D a été réalisé par des moyens de microscopie et de spectroscopie tel que la spectroscopie Raman, de photoémission et d’absorption.Ce manuscrit traite dans un premier temps des propriétés structurelles et électroniques du nitrure de bore hexagonal (h-BN), matériau isolant aux propriétés optiques exotiques et essentiel dans la future intégration de ce type de matériaux 2D permettant de mettre en valeur leurs propriétés intrinsèques.En utilisant le graphène comme substrat les problèmes de mesures par photoémission rencontrés pour des matériaux isolant ont pu être surmonté dans le cas du h-BN et une étude des défauts structurels a pu être réalisée. Par conséquent, les premières mesures directes de la structure de bande électronique de plusieurs plans de h-BN sont présentées dans ce manuscrit.Dans un second temps, une approche d’intégration de ces matériaux 2D différente a été étudiée en formant une hétérostructure 2D/3D. L’interface de cette hétérojonction, composée d’un plan de disulfure de molybdène (MoS2) de dopage intrinsèque N associé à 300 nm de nitrure de gallium (GaN) intentionnellement dopé P à l’aide de magnésium, a été caractérisée. Un transfert de charge du GaN vers le MoS2 a pu être identifié suggérant un contrôle des propriétés électroniques de ce type de structure par le choix de matériaux.Ces travaux ont permis de révéler les diagrammes de bandes électroniques complet des structures étudiées a pu être obtenu permettant une meilleur compréhension de ces systèmes émergeants. / This thesis is at the interface between the study of nitride based compounds and the emerging structures formed by atomically thin bi-dimensional (2D) materials. This work consists in the study of the hybridization of the properties of large band gap materials from the nitride family and the mechanical, electronic and optical performances of layered materials, recently isolated at the monolayer level, highly considered due to their possible applications in electronics devices and fundamental research. In particular, a study of electronics and structural properties of stacked layered materials and 2D/3D interfaces have been realised with microscopic and spectroscopic means such as Raman, photoemission and absorption spectroscopy.This work is firstly focused on the structural and electronic properties of hexagonal boron nitride (h-BN), insulating layered material with exotic optical properties, essential in in the purpose of integrating these 2D materials with disclosed performances. Using graphene as an ideal substrate in order to enable the measure of insulating h-BN during photoemission experiments, a study of structural defects has been realized. Consequently, the first direct observation of multilayer h-BN band structure is presented in this manuscript. On the other hand, a different approach consisting on integrating bi-dimensional materials directly on functional bulk materials has been studied. This 2D/3D heterostructure composed of naturally N-doped molybdenum disulphide and intentionally P-doped gallium nitride using magnesium has been characterised. A charge transfer from GaN to MoS2 has been observed suggesting a fine-tuning of the electronic properties of such structure by the choice of materials.In this work present the full band alignment diagrams of the studied structure allowing a better understanding of these emerging systems.
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Spintronique dans les matériaux 2D : du graphène au h-BN / Spintronics with 2D materials : from graphene to h-BNPiquemal, Maëlis 26 March 2018 (has links)
Aujourd'hui se pose une question fondamentale sur le futur de l'électronique actuelle. De plus en plus, des circuits hybrides intégrant de nouvelles fonctionnalités sont fabriqués. On envisage même, à plus long terme, des circuits basés sur une technologie différente de l'approche CMOS utilisée actuellement. Une de ces technologies est la spintronique qui tire profit du spin, degré de liberté supplémentaire de l'électron. Elle a rapidement fait ses preuves par le passé dans le stockage non volatile binaire (disques durs) et s'oriente aujourd'hui vers de nouvelles mémoires magnétiques ultra-performantes et basse consommation les MRAMs (Magnetic Random Access Memories). En parallèle, une nouvelle catégorie de matériaux à fort potentiel a émergé : les matériaux bidimensionnels (2D). Ces matériaux, dont le fer de lance est le graphène (une couche d'un atome d'épaisseur de graphite), offrent de nouvelles propriétés inégalées. Leur combinaison via la fabrication d'hétérostructures et la capacité d'avoir un contrôle de leur épaisseur à l'échelle atomique pourrait devenir un atout majeur en électronique et plus particulièrement en spintronique. L'objectif de cette thèse a été l'étude de l'intégration et la démonstration du potentiel en termes de fonctionnalités et de performances de ces nouveaux matériaux 2D au sein de jonctions tunnel magnétiques (MTJs), le dispositif prototype de la spintronique. Au cours de cette thèse, nous avons poursuivi les travaux initiés au laboratoire sur l'intégration dans des MTJs du graphène obtenu via une méthode de dépôt CVD (dépôt chimique en phase vapeur) directe sur l’électrode ferromagnétique inférieure. Nous avons démontré que les propriétés de filtrage en spin et de membrane protectrice contre l'oxydation de l'électrode ferromagnétique (FM) sous-jacente s'étendaient à une unique couche de graphène. Par ailleurs, nous avons aussi pu étudier et améliorer significativement l'amplitude du filtrage en spin et du signal de magnétorésistance observé via l'optimisation des procédés de croissance et d'intégration et le choix de différentes configurations de matériaux ferromagnétiques (Ni(111), Co...). De forts effets de filtrage de spin ont ainsi pu être observés avec des magnétorésistances allant de -15% à plus de +80%, soit presque trois fois l'état de l'art. En parallèle, nous nous sommes aussi intéressés à un autre matériau 2D, le nitrure de bore hexagonal (h-BN), isolant isomorphe du graphène qui s'apparenterait à une barrière tunnel d'un seul atome d'épaisseur. Afin d’étudier le h-BN dans une MTJ, nous avons décidé d’exploiter à nouveau le principe d’une croissance directe par CVD du matériau 2D sur le matériau FM. Des mesures CT-AFM (Conductive Tip Atomic Force Microscopy) nous ont permis de démontrer les propriétés de barrière tunnel homogène du h-BN ainsi que le contrôle possible de la hauteur de barrière avec le nombre de couches de h-BN. De plus, des mesures électriques et de magnétotransport nous ont permis de confirmer l’intégration réussie de la barrière tunnel h-BN dans notre MTJ. Nous avons pu obtenir les premiers résultats de forte magnétorésistance pour du h-BN avec une amplitude de la magnétorésistance de +50%, plus d'un ordre de grandeur au-dessus de l'état de l'art, révélant le potentiel du h-BN. Nous avons enfin aussi pu démontrer l'importance du couplage entre le h-BN et l'électrode FM offrant un potentiel de contrôle inédit sur les effets de filtrage en spin et allant jusqu'à rendre le h-BN métallique. Lors de cette thèse, nous avons pu montrer que l’intégration du graphène et du h-BN dans des MTJs via la croissance directe par CVD est un procédé privilégié pour tirer pleinement profit de leurs propriétés. Les résultats obtenus de forte magnétorésistance et de filtrage en spin laissent entrevoir le fort potentiel du graphène, du h-BN mais aussi des autres nouveaux matériaux 2D à venir pour les MTJs. Ces études ouvrent une nouvelle voie d’exploration pour les MTJs : les 2D-MTJs. / Nowadays a critical issue is raised concerning the future of current electronics. Increasingly, hybrid circuits with new functionalities are manufactured. A longer term approach is even contemplated with circuits based on a technology different from the one currently used (CMOS technology). One of these envisioned technologies is spintronics, which benefits from the spin properties, the electron additional degree of freedom. Spintronics has quickly proven its worth in the past in the field of non volatile data storing (hard drives) and is today moving towards new fast and ultra-low-power magnetic random access memories the MRAMs. Meanwhile, these last few years, a new category of materials with high potential has emerged : the bidimensional materials (2D). These materials, with graphene (one atomically thick layer of graphite) as the forerunner, provide new unrivaled properties. Their combination in the form of heterostructures and the ability to obtain a control of their thickness at the atomic scale could be a major asset for electronics and more specifically spintronics. The purpose of this thesis has been the study of the integration and the demonstration of the potential in terms of functionalities and performances of these new 2D materials inside the prototypical spintronic device: the magnetic tunnel junction (MTJ). During this thesis, we have pursued the work initiated by the laboratory on the integration of graphene in MTJs with direct CVD deposition method (chemical vapor deposition) on the underlying ferromagnetic electrode. We demonstrated that the spin filtering and protective membrane properties (preventing the oxidation of the underlying ferromagnetic electrode (FM)) observed earlier expand to a graphene monolayer. Furthermore, we have also studied and improved significantly the amplitude of the spin filtering and the magnetoresistance signal observed. This was done thanks to the optimization of the growth process, integration, and choice of the different configurations of ferromagnetic materials in our structures (Ni(111), Co...). High spin filtering effects have been observed as a function of the configurations with magnetoristances ranging from -15% to beyond +80%, which is almost three times the state of the art. Meanwhile, we looked at another 2D material, the hexagonal boron nitride (h-BN), an insulating isomorph of graphene which could be considered as an atomically thin tunnel barrier. In order to study h-BN into a MTJ, we took again advantage of direct CVD growth of the 2D material on a ferromagnet. CT-AFM (Conductive Tip Atomic Force Microscopy) measurements allowed us to demonstrate the homogeneous tunnel barrier properties of h-BN and the possible control of the barrier height with the number of h-BN layers. Simultaneously, electrical and magnetotransport measurement in the complete junction allowed us to confirm the achieved integration of the h-BN tunnel barrier into our MTJ. We have been able to obtain the first results of high magnetoresistance for h-BN with values one order of magnitude beyond the state of the art. A magnetoresistance of +50% has been reached, thanks to the optimization of the growth process revealing the potential of h-BN. We have also been able to show the important role of the coupling between h-BN and the FM electrode offering an unprecedented potential of control on the spin filtering effects, ranging up to making the h-BN metallic. During this thesis, we have been able to demonstrate that the integration of graphene and h-BN in MTJs through direct CVD growth is a promising process in order to fully exploit their properties. The results obtained of high magnetoresistance and spin filtering point to the high potential for MTJs of graphene and h-BN but also to all the new 2D materials to come. These studies pave the way for exploring a new path for MTJs : the 2D-MTJs.
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SPINTRONIC DEVICES FROM CONVENTIONAL AND EMERGING 2D MATERIALS FOR PROBABILISTIC COMPUTINGVaibhav R Ostwal (9751070) 14 December 2020 (has links)
<p>Novel
computational paradigms based on non-von Neumann architectures are being
extensively explored for modern data-intensive applications and big-data
problems. One direction in this context is to harness the intrinsic physics of
spintronics devices for the implementation of nanoscale and low-power building
blocks of such emerging computational systems. For example, a Probabilistic
Spin Logic (PSL) that consists of networks of p-bits has been proposed for
neuromorphic computing, Bayesian networks, and for solving optimization
problems. In my work, I will discuss two types of device-components required
for PSL: (i) p-bits mimicking binary stochastic neurons (BSN) and (ii) compound
synapses for implementing weighted interconnects between p-bits. Furthermore, I
will also show how the integration of recently discovered van der Waals
ferromagnets in spintronics devices can reduce the current densities required
by orders of magnitude, paving the way for future low-power spintronics
devices.</p>
<p>First, a
spin-device with input-output isolation and stable magnets capable of
generating tunable random numbers, similar to a BSN, was demonstrated. In this
device, spin-orbit torque pulses are used to initialize a nano-magnet with
perpendicular magnetic anisotropy (PMA) along its hard axis. After removal of
each pulse, the nano-magnet can relax back to either of its two stable states,
generating a stream of binary random numbers. By applying a small Oersted field
using the input terminal of the device, the probability of obtaining 0 or 1 in
binary random numbers (P) can be tuned electrically. Furthermore, our work
shows that in the case when two stochastic devices are connected in series, “P”
of the second device is a function of “P” of the first p-bit and the weight of
the interconnection between them. Such control over correlated probabilities of
stochastic devices using interconnecting weights is the working principle of
PSL.</p>
<p>Next my
work focused on compact and energy efficient implementations of p-bits and
interconnecting weights using modified spin-devices. It was shown that unstable
in-plane magnetic tunneling junctions (MTJs), i.e. MTJs with a low energy
barrier, naturally fluctuate between two states (parallel and anti-parallel)
without any external excitation, in this way generating binary random numbers.
Furthermore, spin-orbit torque of tantalum is used to control the time spent by
the in-plane MTJ in either of its two states i.e. “P” of the device. In this
device, the READ and WRITE paths are separated since the MTJ state is read by
passing a current through the MTJ (READ path) while “P” is controlled by
passing a current through the tantalum bar (WRITE path). Hence, a BSN/p-bit is
implemented without energy-consuming hard axis initialization of the magnet and
Oersted fields. Next, probabilistic switching of stable magnets was utilized to
implement a novel compound synapse, which can be used for weighted
interconnects between p-bits. In this experiment, an ensemble of nano-magnets
was subjected to spin-orbit torque pulses such that each nano-magnet has a
finite probability of switching. Hence, when a series of pulses are applied,
the total magnetization of the ensemble gradually increases with the number of
pulses</p>
<p>applied similar to the
potentiation and depression curves of synapses. Furthermore, it was shown that
a modified pulse scheme can improve the linearity of the synaptic behavior,
which is desired for neuromorphic computing. By implementing both neuronal and
synaptic devices using simple nano-magnets, we have shown that PSL can be
realized using a modified Magnetic Random Access Memory (MRAM) technology. Note
that MRAM technology exists in many current foundries.</p>
<p>To further
reduce the current densities required for spin-torque devices, we have
fabricated heterostructures consisting of a 2-dimensional semiconducting
ferromagnet (Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>) and a metal with
spin-orbit coupling metal (tantalum). Because of properties such as clean
interfaces, perfect crystalline nanomagnet structure and sustained magnetic
moments down to the mono-layer limit and low current shunting, 2D ferromagnets
require orders of magnitude lower current densities for spin-orbit torque
switching than conventional metallic ferromagnets such as CoFeB.</p>
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Magnetic Properties of Two-Dimensional Honeycomb-Lattice MaterialsUtermohlen, Franz Gunther January 2021 (has links)
No description available.
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Applications of Two-Dimensional Layered Materials in Interconnect TechnologyChun-Li Lo (9337943) 14 September 2020 (has links)
<p>Copper (Cu) has been used as
the main conductor in interconnects due to its low resistivity. However,
because of its high diffusivity, diffusion barriers/liners (tantalum
nitride/tantalum; TaN/Ta) must be incorporated to surround Cu wires. Otherwise,
Cu ions/atoms will drift/diffuse through the inter-metal dielectric (IMD) that
separates two distinct interconnects, resulting in circuit shorting and chip
failures. The
scaling limit of conventional Cu diffusion barriers/liners has become the
bottleneck for interconnect technology, which in turn limits the IC
performance. The interconnect
half-pitch size will reach ~20 nm in the coming sub-5 nm technology nodes.
Meanwhile, the TaN/Ta (barrier/liner) bilayer stack has to be > 4 nm to
ensure acceptable liner and diffusion barrier properties. Since TaN/Ta occupy a
significant portion of the interconnect cross-section and they are much more
resistive than Cu, the effective conductance of an ultra-scaled interconnect
will be compromised by the thick bilayer. Therefore, two dimensional (2D) layered materials have been
explored as diffusion barrier alternatives owing to their atomically thin body thicknesses. However, many of the proposed 2D
barriers are prepared at too high temperatures to be compatible with the
back-end-of-line (BEOL) technology. In addition, as important as the diffusion
barrier properties, the liner properties of 2D materials must be evaluated,
which has not yet been pursued. </p>
The objective of the
thesis is to develop a 2D barrier/liner that overcomes the issues mentioned.
Therefore, we first visit various 2D layered materials to understand their
fundamental capability as barrier candidates through theoretical calculations. Among
the candidates, hexagonal-boron-nitride (h-BN) and molybdenum disulfide (MoS<sub>2</sub>)
are selected for experimental studies. In addition to studying their fundamental properties to know their
potential, we have also developed techniques that can realize
low-temperature-grown 2D layered materials. Metal-organic
chemical vapor deposition (MOCVD)
is adopted for the synthesis of BEOL-compatible MoS<sub>2</sub>. The electrical
test results demonstrate the promises of integrating 2D layered materials to
the state-of-the-art interconnect technology. Furthermore, by considering not
only diffusion barrier properties but also liner properties, we develop another
2D layered material, tantalum sulfide (TaS<sub>x</sub>), using plasma-enhanced chemical vapor deposition (PECVD). The TaS<sub>x</sub> is promising in
both barrier and liner aspects and is BEOL-compatible. Therefore, we believed
that the conventional TaN/Ta bilayer stack can be
replaced with an ultra-thin TaS<sub>x</sub> layer to maximize the Cu volume for
ultra-scaled interconnects and
improve the performance. Furthermore,
Since via resistance has become the bottleneck for
overall interconnect performance, we study the vertical conduction of TaS<sub>x</sub>.
Both the intrinsic and extrinsic properties of this material are investigated
and engineering approaches to improve the vertical conduction are also tested. Finally,
we explore the possibilities of benefiting from 2D materials in other
applications and propose directions for future studies.
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Electronic and Spin Dependent Phenomena in Two-Dimensional Materials and HeterostructuresXu, Jinsong 03 December 2018 (has links)
No description available.
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Magnetic Interactions in Transition Metal DichalcogenidesAvalos Ovando, Oscar Rodrigo January 2018 (has links)
No description available.
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Laser shock nanostraining of 2D materials and van der Waals heterostructuresMaithilee Motlag (9597326) 26 April 2021 (has links)
<p>Since the successful exfoliation of graphene, two-dimensional (2D) materials have attracted a lot of scientific interest due to their electronic, chemical, and mechanical properties. Due their reduced dimensionality, these 2D materials exhibit superior mechanical and optoelectronic properties when compared to their bulk counterparts. Within the family of 2D materials, the ultrathin transition metal dichalcogenides (TMDs) such as Tungsten diselenide and Molybdenum disulphide have gained significant attention due to their chemical versatility and tunability. Furthermore, it is possible to leverage the distinct characteristic properties of these 2D materials, which are held together by van der Waals forces, by stacking different 2D layers on top of each other resulting in van der Waals (vdW) heterostructures. Due to the absence of feasible methods to effectively deform the crystal structures of these 2D materials and vdW heterostructures, their mechanical properties have not been thoroughly understood. The atomistic simulations can effectively capture the material behavior at the nanoscale level and help us not only not only understand the mechanical properties of these materials but also aid in the development of tailored processes to tune the material properties for the design of novel metamaterials. Using atomistic simulations, we develop the process - property relationships which can guide the direction of experimentation efforts, thereby making the process of discovering and designing new metamaterials efficient. </p><p>In this work, we have used laser shock nanostraining technique which is a scalable approach to modulate the optomechanical properties of 2D materials and vdW materials for practical semiconductor industry applications. The deformation mechanisms of 2D materials such as graphene, boron nitride (BN) and TMDs such as WSe<sub>2</sub> and MoS<sub>2</sub> are examined by employing a laser shocking process. We report studies on crystal structure deformation of multilayered WSe<sub>2</sub> and monolayer graphene at ultra-high strain rate using laser shock . The laser shocking process generates high pressure at GPa level, causing asymmetric 3D straining in graphene and a novel kinked-like locking structure in multilayered WSe<sub>2</sub>. The deformation processes and related mechanical behaviors in laser shocked 2D materials are examined using atomistic simulations. Moiré heterostructures can be obtained by introducing a twist angle between these 2D layers, which can result into vdW materials with different properties, thereby adding an additional degree of freedom in the process-property design approach. We were able to successfully create a tunable stain profile in 2D materials and vdW heterostructures to modulate the local properties such as friction, and bandgap by controlling the level of laser shock, twist angle between the 2D layers and by applying appropriate laser shock pressure . We thus extend this knowledge to further explore the pathways of strain modulation using a combination of laser shocking process, moiré engineering, and strain engineering in 2D materials consisting of graphene, BN, and MoS<sub>2</sub> and to develop the process - property relationships in vdW materials. </p><p>In summary, this research presents a systematic understanding of the effect of laser shocking process on the van der Waals materials and demonstrates the modulation of mechanical and opto-electronic property using laser nanostraining approach. This understanding provides us with opportunities for deterministic design of 2D materials with controllable properties for semiconductor and nanoelectronics applications.</p>
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