Baseando-se na possibilidade de inserção de um novo material de origem têxtil natural animal, bem como, a reciclagem de aproximadamente 1,175 milhões de toneladas descartadas anualmente da matéria-prima estudada (UBABEF, 2011), esta pesquisa teve como objetivo geral efetuar a caracterização física e microscópica de fibra de pena de frango para finalidade têxtil seja para o desenvolvimento de fios têxteis, não tecidos e reforço em compósitos ou outras aplicações. Deste modo, foram objetivos: i) realizar levantamento bibliográfico sobre estrutura e composição de penas e fibras de penas, reciclagem, aplicações existentes, técnicas e processos de caracterização da fibra; ii) coleta do material fibroso proveniente de um matadouro doméstico de frangos; iii) preparação do material, lavagem e secagem das penas; iv) testes mecânicos de caracterização como: alongamento, elasticidade e resistência realizados por meio do dinamômetro Instrom, determinação do teor de regain, umidade e densidade da fibra, bem como a taxa de encolhimento da fibra; v) testes microscópicos de caracterização como: microscopias longitudinais e transversais; vi) propostas e direcionamento do emprego das fibras caracterizadas para finalidade de produção têxtil. As principais conclusões foram: i) bibliografia inédita em português sobre penas de frango para a área têxtil; ii) estudo inédito no Brasil e na língua portuguesa de propriedades físicas e microscópicas de fibras de pena de frango; iii) com base em suas propriedades estruturais, perceberam-se características como brilho, conforto, maciez, toque, permeabilidade à líquido, leveza, entre outras propriedades, aumentando assim seu potencial de empregabilidade têxtil; iv) potencial de fiação e fabricação de têxteis para diversas aplicações. Publicações e palestras foram realizadas com os resultados desta dissertação. / Based on the possibility of developing a new textile material of natural animal origin, as well as the recycling of the studied raw material, of which approximately 1.175 million tons are annually discarded as waste in Brazil (UBABEF, 2011), this study aimed to characterize the general physical and microscopical fibers of chicken feathers for textile purpose for the development of textile yarn, non-woven and composite reinforcement. Its objectives were: i) to analyze the academic literature about the structure and composition of feathers and feather fibers, as well as its recycling, existing applications, processes and techniques of fiber characterization, ii) the collection of fibrous material from a chicken slaughterhouse, iii) the preparation of material, washing and drying the feathers, iv) to develop mechanical characterization tests such as elongation, elasticity and resistance made by Instrom dynamometer, determining the content, moisture regain and fiber density, v) to perform the microscopic characterization tests such as microscopy longitudinal and transverse, and vi ) to draft proposals on the employment of the analyzed and characterized fibers for purposes of producing textiles (yarns, reinforcement for composites, nonwoven blankets, etc.). The main findings were: i) unpublished literature in Portuguese about chicken feathers for the textile area, ii) unpublished study in Brazil and in portuguese language of physical and microscopic properties of chicken feathers\' fibers for the development of textile products of natural origin from such chicken feathers, iii) the identification of the potential for the production of blended yarn with cotton / wool, blankets and non-woven and reinforcement for composites, based on their physical, mechanical and microscopic properties, and, iv) the identification of the potential for yarn production (via spinning) and textile manufacturing for various applications. Publications and lectures were held with the results of this dissertation.

O presente trabalho faz inicialmente uma revisão básica a respeito de diodos controlados por porta ressaltando o método criado por Grove, e corrigido por Pierret, para a determinação da velocidade de recombinação superficial, parâmetro esse, importante na análise do desempenho do dispositivo frente a situações que tendem a degradar o funcionamento do mesmo. Em seguida, propomos a utilização de DCP\'s como sensores de radiação luminosa e possivelmente como sensor de cores. Para tanto, simulamos o comportamento de uma junção PN sob iluminação quando variamos a extensão da região de depleção associada à mesma. De acordo com essas simulações, observamos que o rendimento de conversão da energia luminosa para elétrica, em função do comprimento de onda da luz incidente, apresenta dependência com relação a extensão da região de carga espacial. Essa característica pode vir a ser usada, futuramente, na detecção seletiva de comprimentos de onda, e portanto, permitindo a discriminação de cores. A variação da largura da região de depleção nas proximidades de uma junção PN pode ser conseguida, numa estrutura do tipo DCP, através da aplicação em sua porta, de pulsos de amplitude e inclinação adequadas, de forma a levá-lo a operar em depleção profunda. Nessas condições, o valor máximo da largura da região de depleção é maior do que o seu valor máximo estacionário, podendo chegar a até 3 vezes o mesmo, conforme foi constatado por simulação, através de um software por nós desenvolvido, para uma estrutura MOS pulsada. Tal simulação forneceu-nos o campo e potencial elétricos e a concentração de portadores em função da profundidade através da resolução da equação de Poisson com condições de contorno adequadas. Dados os resultados obtidos nas simulações, a próxima etapa foi a elaboração de máscaras litográficas para construir diodos controlados por porta com diferentes geometrias, algumas sugeridas pela literatura, outras ) desenvolvidas para esse trabalho. Tais máscaras foram confeccionadas pelo CTI em Campinas e foram desenhadas através do software Microeletrônica de Etienne Sicard da universidade de Toulouse. Utilizamos as máscaras fabricadas para construir uma pastilha-teste preliminar com os diodos controlados por porta propostos. Infelizmente, nesta única corrida, tivemos curto-circuito entre porta e substrato e apenas as junções PN funcionaram a contento. Obtivemos diodos com fator de idealidade de ~1,4 e densidade de corrente reversa, no melhor dos casos, igual a 1,23.104 nA/cm² para áreas de (1000 x 1000) µm². Por outro lado, como não conseguimos DCP\'s funcionando, utilizamos transistores nMOS convencionais, fornecidos pelo Prof. João Antonio Martino, para medir a velocidade de recombinação superficial, \"velocidade de recombinação aparente\", que resultou em 5,5×106 cm/s, segundo o método proposto por Pierret. / This work presents a basic review about gate-controlled diodes (GCD) mainly on the method created by Grove and corrected by Pierret, for measuring the surface recombination velocity that is an important parameter on the analysis of device performance. In the sequence, we propose the use of GCD\'s as light radiation sensors and, probably as color sensors. To do so, we have simulated the behavior of a PN junction under illumination, varying the depletion region length. The simulations revealed that the luminous to electrical energy conversion depends on the length of the spatial charge region. This could be used, in the future, on the selective wavelength detection, alloying color discrimination. The variation of the depletion region length in the vicinity of a PN junction can be done, in a GCD structure, by applying in its gate, a set of electrical pulses with the right characteristics, in order to drive it to the deep depletion mode. In these conditions, the maximum length of the depletion region is larger than its steady state value, reaching as much as 3 times that value, as could be determined by means of simulation of a pulsed MOS structure, in a specific software developed for that purpose. This software give us the electric field and potencial and the carrier concentration against depth into the silicon by solving the Poisson equation with the right boundary conditions. Keeping these results in mind, the next step was the project of the lithographic masks in order to explore some different geometries, some of them suggested by the literature, others developed in this work. The fabrication of those masks were done by CTI in Campinas e were designed with the software Microeletrônica by Etienne Sicard from the university of Toulouse. We have used the masks to manufacture a preliminary chip test which included gate-controled diodes.Unfortunately, in this unique run, \"short circuits\" between gate and bulk has occurred and only the PN junctions worked as expected. We have obtained diodes with ideality factor of ~1.4 and reverse current density of 1.23.104 nA/cm² in the best case for junction areas of (1000 x 1000) µm². On the other hand, as we have not got gate-controlled diodes which were working, we have used conventional nMOS transistors borrowed by Prof. João Antônio Martino. Surface recombination velocity so was measured in these nMOS transistors and resulted in 5.5.106 cm/s, according to the method proposed by Pierret.

O presente trabalho visou desenvolver ligas à base de Níquel-Cromo para prótese dentária, que confiram as melhores características metalúrgicas e químicas para posterior produção e aplicação. Para isto foram adquiridas amostras de ligas comerciais de 8 fabricantes. Os materiais foram caracterizados em termos de composição química, propriedades mecânicas, caracterização microestrutural, temperatura de fusão, coeficiente de expansão térmica, corrosão e biocompatibilidade. Para isto, utilizou-se as fluorescência de raios X (XRF-WDS), ICP-OES, ensaios de tração, ensaios de dureza, ensaios de corrosão, avaliação de citotoxicidade, microscopia eletrônica de varredura (MEV), microanálise eletrônica (EDS), difratometria de Raios X (DRX), análise térmica diferencial (DTA), dilatometria e avaliação de fluidez. A maioria dos resultados composicionais não condiz com as composições fornecidas pelos fabricantes. Os resultados mostraram claramente a presença de um eutético típico formado pelas fases Niss e NiBe nas ligas contendo Be, que pode ser considerado uma \"impressão digital\" da presença deste elemento nestas ligas. É possível verificar a formação de intermetálicos na região interdendritica para as ligas isentas de Be, sendo identificado um siliceto (Nb6Ni16Si7) em uma das ligas, que possui temperatura de inicio de fusão inferior ao eutético Niss e NiBe das ligas com Be. De uma forma geral, os resultados dos ensaios de dureza mostraram valores superiores de dureza para as ligas com Be. Foi escolhida uma das ligas comerciais para a reprodução em escala laboratorial (LAB) e industrial (IND). Estas ligas produzidas apresentaram as mesmas características microestruturais, químicas e físicas da liga comercial. Nos ensaios de fluidez, a liga LAB apresentou o mesmo comportamento da liga comercial. A liga IND apresentou limite de escoamento e módulo de elasticidade de ?e0,02%= 810MPa e E= 200 GPa, respectivamente. Os ensaios de corrosão mostraram comportamento passivo tanto para a liga comercial quanto para a liga IND em saliva artificial e enxaguante bucal. O ensaio de citotoxicidade da liga IND indicou comportamento não citotóxico em controle negativo (Chapa de Ti). Os resultados obtidos com a liga IND indicam a possibilidade de fabricação desta liga Ni-Cr para próteses dentárias em escala industrial. / This study aimed to develop nickel-chromium base alloys for dental prostheses with the best characteristics for subsequent production and application. Samples were acquired from eight manufacturers of commercial alloys. The materials were characterized in terms of chemical composition, mechanical properties, microstructure, melting temperature, coefficient of thermal expansion, corrosion and biocompatibility. For this, we have used X-ray fluorescence (XRF-WDS), ICP-OES, tensile tests, hardness testing, corrosion testing, evaluation of cytotoxicity, scanning electron microscopy (SEM), electron probe microanalysis (EDS) , X-ray diffraction (XRD), differential thermal analysis (DTA), dilatometry and evaluation of fluidity. Most of the chemical compositional determined in this study were not consistent with the compositions provided by the manufacturers. The results clearly showed the presence of a typical eutectic microstructure formed by Niss and NiBe in alloys containing Be, which can be considered a \"fingerprint\" of the presence of this element in these alloys. It was possible to verify the formation of intermetallics in the interdendritic region of the Be-free alloys. In one of the alloys this intermetallic was identified as (Nb6Ni16Si7), this alloy presenting a initial melting temperature below the eutectic melting of the Niss+NiB eutectic. Overall, the results of hardness tests showed superior hardness for alloys with Be. One of the commercial alloys was chosen for reproduction in laboratory (LAB) and industrial (IND) scales. The alloys produced showed the same microstructural characteristics, chemical and physical characteristics of the commercial alloy. In the fluidity tests, the LAB alloy showed the same behavior of the commercial alloy. The IND alloy presented yield strength and modulus of elasticity ?e0, 02% = 810MPa, E = 200 MPa, respectively. The corrosion tests showed passive behavior for both commercial and IND alloy in artificial saliva and mouthwash solutions. The cytotoxicity assay indicated that the IND alloy is not cytotoxic in the negative control (Ti plate). The results obtained with the IND alloy indicate the possibility of fabrication this alloy for dental prosthesis on an industrial scale.

O presente trabalho faz inicialmente uma revisão básica a respeito de diodos controlados por porta ressaltando o método criado por Grove, e corrigido por Pierret, para a determinação da velocidade de recombinação superficial, parâmetro esse, importante na análise do desempenho do dispositivo frente a situações que tendem a degradar o funcionamento do mesmo. Em seguida, propomos a utilização de DCP\'s como sensores de radiação luminosa e possivelmente como sensor de cores. Para tanto, simulamos o comportamento de uma junção PN sob iluminação quando variamos a extensão da região de depleção associada à mesma. De acordo com essas simulações, observamos que o rendimento de conversão da energia luminosa para elétrica, em função do comprimento de onda da luz incidente, apresenta dependência com relação a extensão da região de carga espacial. Essa característica pode vir a ser usada, futuramente, na detecção seletiva de comprimentos de onda, e portanto, permitindo a discriminação de cores. A variação da largura da região de depleção nas proximidades de uma junção PN pode ser conseguida, numa estrutura do tipo DCP, através da aplicação em sua porta, de pulsos de amplitude e inclinação adequadas, de forma a levá-lo a operar em depleção profunda. Nessas condições, o valor máximo da largura da região de depleção é maior do que o seu valor máximo estacionário, podendo chegar a até 3 vezes o mesmo, conforme foi constatado por simulação, através de um software por nós desenvolvido, para uma estrutura MOS pulsada. Tal simulação forneceu-nos o campo e potencial elétricos e a concentração de portadores em função da profundidade através da resolução da equação de Poisson com condições de contorno adequadas. Dados os resultados obtidos nas simulações, a próxima etapa foi a elaboração de máscaras litográficas para construir diodos controlados por porta com diferentes geometrias, algumas sugeridas pela literatura, outras ) desenvolvidas para esse trabalho. Tais máscaras foram confeccionadas pelo CTI em Campinas e foram desenhadas através do software Microeletrônica de Etienne Sicard da universidade de Toulouse. Utilizamos as máscaras fabricadas para construir uma pastilha-teste preliminar com os diodos controlados por porta propostos. Infelizmente, nesta única corrida, tivemos curto-circuito entre porta e substrato e apenas as junções PN funcionaram a contento. Obtivemos diodos com fator de idealidade de ~1,4 e densidade de corrente reversa, no melhor dos casos, igual a 1,23.104 nA/cm² para áreas de (1000 x 1000) µm². Por outro lado, como não conseguimos DCP\'s funcionando, utilizamos transistores nMOS convencionais, fornecidos pelo Prof. João Antonio Martino, para medir a velocidade de recombinação superficial, \"velocidade de recombinação aparente\", que resultou em 5,5×106 cm/s, segundo o método proposto por Pierret. / This work presents a basic review about gate-controlled diodes (GCD) mainly on the method created by Grove and corrected by Pierret, for measuring the surface recombination velocity that is an important parameter on the analysis of device performance. In the sequence, we propose the use of GCD\'s as light radiation sensors and, probably as color sensors. To do so, we have simulated the behavior of a PN junction under illumination, varying the depletion region length. The simulations revealed that the luminous to electrical energy conversion depends on the length of the spatial charge region. This could be used, in the future, on the selective wavelength detection, alloying color discrimination. The variation of the depletion region length in the vicinity of a PN junction can be done, in a GCD structure, by applying in its gate, a set of electrical pulses with the right characteristics, in order to drive it to the deep depletion mode. In these conditions, the maximum length of the depletion region is larger than its steady state value, reaching as much as 3 times that value, as could be determined by means of simulation of a pulsed MOS structure, in a specific software developed for that purpose. This software give us the electric field and potencial and the carrier concentration against depth into the silicon by solving the Poisson equation with the right boundary conditions. Keeping these results in mind, the next step was the project of the lithographic masks in order to explore some different geometries, some of them suggested by the literature, others developed in this work. The fabrication of those masks were done by CTI in Campinas e were designed with the software Microeletrônica by Etienne Sicard from the university of Toulouse. We have used the masks to manufacture a preliminary chip test which included gate-controled diodes.Unfortunately, in this unique run, \"short circuits\" between gate and bulk has occurred and only the PN junctions worked as expected. We have obtained diodes with ideality factor of ~1.4 and reverse current density of 1.23.104 nA/cm² in the best case for junction areas of (1000 x 1000) µm². On the other hand, as we have not got gate-controlled diodes which were working, we have used conventional nMOS transistors borrowed by Prof. João Antônio Martino. Surface recombination velocity so was measured in these nMOS transistors and resulted in 5.5.106 cm/s, according to the method proposed by Pierret.

O presente trabalho visou desenvolver ligas à base de Níquel-Cromo para prótese dentária, que confiram as melhores características metalúrgicas e químicas para posterior produção e aplicação. Para isto foram adquiridas amostras de ligas comerciais de 8 fabricantes. Os materiais foram caracterizados em termos de composição química, propriedades mecânicas, caracterização microestrutural, temperatura de fusão, coeficiente de expansão térmica, corrosão e biocompatibilidade. Para isto, utilizou-se as fluorescência de raios X (XRF-WDS), ICP-OES, ensaios de tração, ensaios de dureza, ensaios de corrosão, avaliação de citotoxicidade, microscopia eletrônica de varredura (MEV), microanálise eletrônica (EDS), difratometria de Raios X (DRX), análise térmica diferencial (DTA), dilatometria e avaliação de fluidez. A maioria dos resultados composicionais não condiz com as composições fornecidas pelos fabricantes. Os resultados mostraram claramente a presença de um eutético típico formado pelas fases Niss e NiBe nas ligas contendo Be, que pode ser considerado uma \"impressão digital\" da presença deste elemento nestas ligas. É possível verificar a formação de intermetálicos na região interdendritica para as ligas isentas de Be, sendo identificado um siliceto (Nb6Ni16Si7) em uma das ligas, que possui temperatura de inicio de fusão inferior ao eutético Niss e NiBe das ligas com Be. De uma forma geral, os resultados dos ensaios de dureza mostraram valores superiores de dureza para as ligas com Be. Foi escolhida uma das ligas comerciais para a reprodução em escala laboratorial (LAB) e industrial (IND). Estas ligas produzidas apresentaram as mesmas características microestruturais, químicas e físicas da liga comercial. Nos ensaios de fluidez, a liga LAB apresentou o mesmo comportamento da liga comercial. A liga IND apresentou limite de escoamento e módulo de elasticidade de ?e0,02%= 810MPa e E= 200 GPa, respectivamente. Os ensaios de corrosão mostraram comportamento passivo tanto para a liga comercial quanto para a liga IND em saliva artificial e enxaguante bucal. O ensaio de citotoxicidade da liga IND indicou comportamento não citotóxico em controle negativo (Chapa de Ti). Os resultados obtidos com a liga IND indicam a possibilidade de fabricação desta liga Ni-Cr para próteses dentárias em escala industrial. / This study aimed to develop nickel-chromium base alloys for dental prostheses with the best characteristics for subsequent production and application. Samples were acquired from eight manufacturers of commercial alloys. The materials were characterized in terms of chemical composition, mechanical properties, microstructure, melting temperature, coefficient of thermal expansion, corrosion and biocompatibility. For this, we have used X-ray fluorescence (XRF-WDS), ICP-OES, tensile tests, hardness testing, corrosion testing, evaluation of cytotoxicity, scanning electron microscopy (SEM), electron probe microanalysis (EDS) , X-ray diffraction (XRD), differential thermal analysis (DTA), dilatometry and evaluation of fluidity. Most of the chemical compositional determined in this study were not consistent with the compositions provided by the manufacturers. The results clearly showed the presence of a typical eutectic microstructure formed by Niss and NiBe in alloys containing Be, which can be considered a \"fingerprint\" of the presence of this element in these alloys. It was possible to verify the formation of intermetallics in the interdendritic region of the Be-free alloys. In one of the alloys this intermetallic was identified as (Nb6Ni16Si7), this alloy presenting a initial melting temperature below the eutectic melting of the Niss+NiB eutectic. Overall, the results of hardness tests showed superior hardness for alloys with Be. One of the commercial alloys was chosen for reproduction in laboratory (LAB) and industrial (IND) scales. The alloys produced showed the same microstructural characteristics, chemical and physical characteristics of the commercial alloy. In the fluidity tests, the LAB alloy showed the same behavior of the commercial alloy. The IND alloy presented yield strength and modulus of elasticity ?e0, 02% = 810MPa, E = 200 MPa, respectively. The corrosion tests showed passive behavior for both commercial and IND alloy in artificial saliva and mouthwash solutions. The cytotoxicity assay indicated that the IND alloy is not cytotoxic in the negative control (Ti plate). The results obtained with the IND alloy indicate the possibility of fabrication this alloy for dental prosthesis on an industrial scale.

RUNX2 belongs to the RUNT domain family of transcription factors of which three have been identified in humans (RUNX1, RUNX2 and RUNX3). RUNX proteins are vital for metazoan development and participate in the regulation of cellular differentiation and cell cycle progression (Coffman, 2003). RUNX2 is required for proper bone formation by driving the differentiation of osteoblasts from mesenchymal progenitors during development (Ducy et al, 1997; Komori et al, 1997; Otto et al, 1997). RUNX2 is also vital for chondrocyte maturation by promoting the differentiation of chondrocytes to the hypertrophic phenotype (Enomoto et al, 2000). The consequences of completely disrupting the RUNX2 locus in mice provided compelling and conclusive evidence for the biological importance of RUNX2 where knockout mice died shortly after birth with a complete lack of bone formation (Komori et al, 1997; Otto et al, 1997). A further indication of the requisite role of RUNX2 in skeletal development was the discovery that RUNX2 haploinsufficiency in humans and mice caused the skeletal syndrome Cleidocranial Dysplasia (CCD) (Mundlos et al, 1997; Lee et al, 1997). A unique feature of RUNX2 is the consecutive polyglutamine and polyalanine tracts (Q/A domain). Mutations causing CCD have been observed in the Q/A domain of RUNX2 (Mundlos et al, 1997). The Q/A domain is an essential part of RUNX2 and participates in transactivation function (Thirunavukkarasu et al, 1998). Previous genotyping studies conducted in our laboratory identified several rare RUNX2 Q/A variants in addition to a frequently occurring 18 base pair deletion of the polyalanine tract termed the 11Ala allele. Analysis of serum parameters in 78 Osteoarthritis patients revealed the 11Ala allele was associated with significantly decreased osteocalcin. Furthermore, analysis of 11Ala allele frequencies within a Geelong Osteoporosis Study (GOS) fracture cohort and an appropriate age matched control group revealed the 11Ala allele was significantly overrepresented in fracture cases indicating an association with increased fracture risk. To further investigate the 11Ala allele and rare Q/A variants, 747 DNA samples from the Southeast Queensland bone study were genotyped using PCR and PAGE. The experiment served two purposes: 1) to detect additional rare Q/A variants to enrich the population of already identified mutants and 2) have an independent assessment of the effect of the 11Ala allele on fracture to either support or refute our previous observation which indicated the 11Ala allele was associated with an increased risk of fracture in the GOS. From the 747 samples genotyped, 665 were WT, 76 were heterozygous for the 11Ala allele, 5 were homozygous for the 11Ala allele and 1 was heterozygous for a rare 21 bp deletion of the polyglutamine tract. Chi-square analysis of RUNX2 genotype distributions within fracture and non-fracture groups in the Southeast Queensland bone study revealed that individuals that carried at least one copy of the 11Ala allele were enriched in the fracture group (p = 0.16, OR = 1.712). The OR of 1.712 was of similar magnitude to the OR observed in the GOS case-control investigation (OR = 1.9) providing support for the original study. Monte-Carlo simulations were used to combine the results from the GOS and the Southeast Queensland bone study. The simulations were conducted with 10000 iterations and demonstrated that the maximum probability of obtaining both study results by chance was less than 5 times in two hundred (p < 0.025) suggesting that the 11Ala allele of RUNX2 was associated with an increased fracture risk. The second element of the research involved the analysis of rare RUNX2 Q/A variants identified from multiple epidemiological studies of bone. Q/A repeat variants were derived from four populations: the GOS, an Aberdeen cohort, CAIFOS and a Sydney twin study. Collectively, a total of 20 rare glutamine and one alanine variants were identified from 4361 subjects. All RUNX2 Q/A variants were heterozygous for a mutant allele and a wild type allele. Analysis of incident fracture during a five year follow up period in the CAIFOS revealed that Q-variants (n = 8) were significantly more likely to have fractured compared to non-carriers (p = 0.026, OR 4.932 95% CI 1.2 to 20.1). Bone density data as measured by quantitative ultrasound was available for CAIFOS. Analysis of BUA and SOS Z-scores revealed that Q-repeat variants had significantly lower BUA (p = 0.031, mean Z-score of -0.79) and a trend for lower SOS (p = 0.190, mean Z-score of -0.69). BMD data was available for all four populations. To normalize the data across the four studies, FN BMD data was converted into Z-scores and the effect of the Q/A variants on BMD was analysed using a one sample approach. The analysis revealed Q/A variants had significantly lower FN BMD (p = 0.0003) presenting with a 0.65 SD decrease. Quantitative transactivation analysis was conducted on RUNX2 proteins harbouring rare glutamine mutations and the 11Ala allele. RUNX2 proteins containing a glutamine deletion (16Q), a glutamine insertion (30Q) and the 11Ala allele were overexpressed in NIH3T3 and HEK293 cells and their ability to transactivate a known target promoter was assessed. The 16Q and 30Q had significantly decreased reporter activity compared to WT in NIH3T3 cells (p = 0.002 and 0.016, for 16Q and 30Q, respectively). In contrast 11Ala RUNX2 did not show significantly different promoter activation potential (p = 0.54). Similar results were obtained in HEK293 cells where both the 16Q and 30Q RUNX2 displayed decreased reporter activity (p=0.007 and 0.066 for 16Q and 30Q respectively) whereas the 11Ala allele had no material effect on RUNX2 function (p = 0.20). The RUNX2 gene target reporter assay provided evidence to suggest that variation within the glutamine tract of RUNX2 was capable of altering the ability of RUNX2 to activate a known target promoter. In contrast, the 11Ala allele showed no variation in RUNX2 activity. The third feature of the research served the purpose of identifying potential RUNX2 gene targets with particular emphasis on discovering genes cooperatively regulated by RUNX2 and the powerful bone promoting agent BMP2. The experiment was conducted by creating stably transfected NIH3T3 cells lines overexpressing RUNX2 or BMP2 or both RUNX2 and BMP2. Microarray analysis revealed very few genes were differentially regulated between standard NIH3T3 cells and cells overexpressing RUNX2. The results were confirmed via RT-PCR analysis which demonstrated that the known RUNX2 gene targets Osteocalcin and Matrix Metalloproteinase-13 were modestly induced 2.5 fold (p = 0.00017) and 2.1 fold (p = 0.002) respectively in addition to identifying only two genes (IGF-II and SCYA11) that were differentially regulated greater than 10 fold. IGF-II and SYCA11 were significantly down-regulated 27.6 fold (p = 1.95 x 10-6) and 10.1 fold (p = 0.0002) respectively. The results provided support for the notion that RUNX2 on its own was not sufficient for optimal gene expression and required the presence of additional factors. To discover genes cooperatively regulated by RUNX2 and BMP2, microarray gene expression analysis was performed on standard NIH3T3 cells and NIH3T3 cells stably transfected with both RUNX2 and BMP2. Comparison of the gene expression profiles revealed the presence of a large number of differentially regulated genes. Four genes EHOX, CCL9, CSF2 and OSF-1 were chosen to be further characterized via RT-PCR. Sequential RT-PCR analysis on cDNA derived from control cells and cells stably transfected with either RUNX2, BMP2 or both RUNX2/BMP2 revealed that EHOX and CSF2 were cooperatively induced by RUNX2 and BMP2 whereas CCL9 and OSF-1 were suppressed by BMP2. The overexpression of both RUNX2 and BMP2 in NIH3T3 fibroblasts provided a powerful model upon which to discover potential RUNX2 gene targets and also identify genes synergistically regulated by BMP2 and RUNX2. The fourth element of the research investigated the role of RUNX2 in the ascorbic acid mediated induction of MMP-13 mRNA. The study was carried out using NIH3T3 cell lines stably transfected with BMP2, RUNX2 and both BMP2 and RUNX2. The cell lines were grown to confluence and subsequently cultured for a further 12 days in standard media or in media supplemented with AA. RT-PCR analysis was used to assess MMP-13 mRNA expression. The RT-PCR results demonstrated that AA was not sufficient for inducing MMP-13 mRNA in NIH3T3 cells. In contrast RUNX2 significantly induced MMP-13 levels 85 fold in the absence of AA (p = 0.0055) and upregulated MMP-13 mRNA levels 254 fold in the presence of AA (p = 0.0017). The results demonstrated that RUNX2 was essential for the AA mediated induction of MMP-13 mRNA in NIH3T3 cells. The effect of BMP2 on MMP-13 expression was also investigated. BMP2 induced MMP-13 mRNA transcripts a modest 3.8 fold in the presence of AA (p = 0.0027). When both RUNX2 and BMP2 were overexpressed in the presence of AA, MMP-13 mRNA levels were induced a massive 4026 fold (p = 8.7 x 10-4) compared to control cells. The investigation revealed that RUNX2 was an essential factor for the AA mediated induction of MMP-13 and that RUNX2 and BMP2 functionally cooperated to regulate MMP-13 mRNA levels.

In this work we have prepared Si and SI(1-X)GE(X) nanocrystals by rf magnetron cosputtering method. The eect of annealing parameters and Ge content of x on the structural and optical properties sandwiched SiO2/SiO2: Si: Ge/SiO2 nanostructures have been investigated. For characterization we have used cross-sectional high resolution electron microscope (HREM), X-ray diraction (XRD), Raman spectroscopy (RS), Fourier transform infrared (FTIR), photoluminescence (PL), and temperature dependent PL (TDPL) techniques. It was shown that Ge content of x, annealing temperature, and annealing time are important parameters aecting the structural and optical properties of the nanocrystals. We have observed a uniform SI(1-X)GE(X) nanocrystal formation upon annealing at relatively low temperatures and short annealing time. However, Ge-rich SI(1-X)GE(X) nanocrystals do not hold their compositional uniformity when annealed at high temperatures for enough long time. A segregation process leads to the separation of Ge and Si atoms from each other and formation of Si-rich core covered by a Ge-rich shell. Related to the optical properties of Si and SI(1-X)GE(X) nanocrystals, influence of annealing treatments and Ge content of x on the simultaneous observation and relative contribution of quantum confined and interface related radiative emission to PL spectra are investigated. On the other hand, temperature dependent photoluminescence (TDPL) measurements have been applied to investigate in detail the involving PL mechanisms and the competing thermally activated emission process and the thermally activated escape process of carriers into nonradiative recombination centers and/or tunneling of the excitons into the interface or to larger nanocrystals.

No description available.

Single crystals of GaSe were grown from the melt using 3-zone vertical Bridgman-Stockbarger system. In order to determine the doping effect, nitrogen and silicon ions were implanted to the grown crystals. Surface morphology and stoichiometry were examined using scanning electron microscope equipped with EDAX and structure properties were examined by x-ray diffraction technique. It was observed that the resulting ingot was stoichiometric and the structure was hexagonal. To identify the effects of ion implantation on the physical properties of the samples depending on annealing / electrical conductivity, hall measurements, current-voltage characteristics, photoconductivity and photoluminescence measurements were carried out in the temperature range of 100-450 K. Also spectral transmission measurements were carried out for all the samples at room temperature. It was observed that both N- and Si- implantation followed by annealing process decreased the resisitivity values from 107 to 103 (&amp / #61527 / -cm). Temperature dependent conductivity measurements were analyzed to deduce the dominant transport mechanisms. The trap levels were also investigated by the space charge limited currents (SCLC) measurements. The temperature dependence of hole concentrations showed that as-grown, N- and Si-implanted samples behave as partially compensated p-type semiconductors. Using suitable statistical method, transport parameters such as acceptor level, donor and acceptor concentrations were extracted from the experimental data. Trapping centers and recombination mechanisms were determined from the temperature dependent photoconductivity measurements by investigating the relation between photocurrent and illumination intensity. N- and Si- implantation effects on GaSe were also examined by spectral photoconductivity and transmission measurements. And lastly, radiative recombination mechanisms in as-grown GaSe were investigated through photoluminescence (PL) measurements and the information related to the structural defects, the exciton levels and the structure of the forbidden gap were investigated.

In this work, structural, electrical and optical characterization of as-grown, Ge-implanted, and annealed GaSe single crystals grown by using 3-zone vertical Bridgman-Stockbarger system, have been studied by carrying out X-ray Diffraction (XRD), electrical conductivity, Hall effect, photoconductivity, and spectral transmission measurements. The temperature dependent electrical conductivity of these samples have been measured between 100 and 400 K. As a result, it was observed that upon implanting GaSe with germanium following annealing process, the resistivity is reduced from 2.1x109 to 6.5x105 &amp / #937 / -cm. Also it was found that Ge-implantation followed by annealing at 500 oC increases the conductivity in exponential fashion. From the temperature dependent conductivities, the activation energies have been found to be 4, 34 and 314 meV for as-grown, 36 and 472 meV for as-implanted, and 39 and 647 meV for implanted and annealed at 500 oC GaSe single crystals. Using XRD measurements it was observed that there is an increase in peak intensities at specific annealing temperatures (300 and 500 C) and a decrease in higher annealing temperatures (700 C). Temperature dependent carrier concentration and Hall mobility measurement were performed in the temperature range of 230 - 410 and 100 - 400 K for as-grown and Ge-implanted and annealed GaSe samples, respectively. All of the samples in this study were found to be p-type with the help Hall measurements. In addition, the density of donor and acceptor atoms are found for each sample and results are compared with each other. In addition, using photoconductivity measurement the relation between photocurrent and illumination intensity and the character of photoconduction were determined. As a result it was found that while at specific temperature intervals impurity scatterings are dominant, in other intervals phonon scatterings start to dominate. Finally, in order to determine annealing dependent change of band gap of unimplanted and Ge-implanted GaSe samples at room temperature, the transmission measurement have been carried out as a optical characterization part of our study. As a consequence of this measurement it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as-grown GaSe samples and a slight shift of optical band gap toward to high energy for Ge-implanted samples with annealing process.