This thesis uses the techniques of atomic force microscopy (AFM) and conductiveAFM (CAFM) to study defect sites on GaN films. In particular, these defect sites demonstrate current leakage under reverse-bias conditions that are detrimental to device fabrication. Two growth techniques that were used to improve this leakage behavior for samples in this study included: epitaxial lateral overgrowth (ELO) and nano-ELO using a Si3N4 film. Both techniques decrease defects such as threading dislocations by controlling the nucleation and growth behavior of the GaN films. The EL0 technique uses a patterned dielectric film to laterally grow micron-wide regions (referred to as 'wings') that minimize dislocation defects. Our CAFM studies indicate that ELO films have no detectable leakage sites in these wing regions; however, between these regions the films have typical leakage site densities seen for standard films on the order of 107cm-3. The nano-ELO technique utilizes a porous Si3N4 film to reduce defects over the entire film, and CAFM data indicate nearly a factor of ten reduction in leakage site densities. The nano-ELO technique is therefore optimal for an overall improvement in film quality, whereas the ELO technique is suitable for device fabrication in patterned regions with optimized film quality.

Master of Science / Department of Electrical and Computer Engineering / William B. Kuhn / The design of power amplifiers in any semi-conductor process is not a trivial exercise and it is often encountered that the simulated solution is significantly different than the results obtained. Oscillatory phenomena occurring either in-band or out of band and sometimes at subharmonic intervals can render a design useless. Other less apparent effects such as jumps, hysteresis and continuous spectrum, often referred to as chaos, can also invalidate a design. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may have suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to the loss of the design there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if K>1 and [delta][supscript]s<1 can fail and other tools must be used to validate circuit stability. With the emphasis being placed on stability, a 1W pulse modulated S-band power amplifier is designed using a battery of analysis tools in addition to the standard Linville or Rollett criteria to rigorously confirm the stability of the circuit. Test measurements are then presented to confirm the stability of the design and illustrate the results. The research shown contributes to the state of the art by offering a detailed approach to stability design and then applying the techniques to the design of a 1W pulse modulated S-band power amplifier demonstrating the first with 20 nanosecond pulse width switching and single digit nanosecond rise and fall times at 1 Watt power levels.

Machine learning is a branch of artificial intelligence that uses data to automatically build inferences and models designed to generalise and make predictions. In this thesis, the use of machine learning in materials science is explored, for two different problems: the optimisation of gallium nitride optoelectronic devices, and the prediction of material failure in the setting of laboratory earthquakes. Light emitting diodes based on III-nitrides quantum wells have become ubiquitous as a light source, owing to their direct band-gap that covers UV, visible and infra-red light, and their very high quantum efficiency. This efficiency originates from most electronic transitions across the band-gap leading to the emission of a photon. At high currents however this efficiency sharply drops. In chapters 3 and 4 simulations are shown to provide an explanation for experimental results, shedding a new light on this drop of efficiency. Chapter 3 provides a simple and yet accurate model that explains the experimentally observed beneficial effect that silicon doping has on light emitting diodes. Chapter 4 provides a model for the experimentally observed detrimental effect that certain V-shaped defects have on light emitting diodes. These results pave the way for the association of simulations to detailed multi-microscopy. In the following chapters 5 to 7, it is shown that machine learning can leverage the use of device simulations, by replacing in a targeted and efficient way the very labour intensive tasks of making sure the numerical parameters of the simulations lead to convergence, and that the physical parameters reproduce experimental results. It is then shown that machine learning coupled with simulations can find optimal light emitting diodes structures, that have a greatly enhanced theoretical efficiency. These results demonstrate the power of machine learning for leveraging and automatising the exploration of device structures in simulations. Material failure is a very broad problem encountered in a variety of fields, ranging from engineering to Earth sciences. The phenomenon stems from complex and multi-scale physics, and failure experiments can provide a wealth of data that can be exploited by machine learning. In chapter 8 it is shown that by recording the acoustic waves emitted during the failure of a laboratory fault, an accurate predictive model can be built. The machine learning algorithm that is used retains the link with the physics of the experiment, and a new signal is thus discovered in the sound emitted by the fault. This new signal announces an upcoming laboratory earthquake, and is a signature of the stress state of the material. These results show that machine learning can help discover new signals in experiments where the amount of data is very large, and demonstrate a new method for the prediction of material failure.

by Lam Siu Dan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 65-67). / Text in English; abstracts in English and Chinese. / by Lam Siu Dan. / Table of contents --- p.I / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Interest in GaAs1-xNx/GaAs alloy --- p.1 / Chapter 1.2 --- Interest in growing GaAs1-xNx/GaAs using different carrier gases --- p.4 / Chapter 1.3 --- Theoretical calculation of the band gap energy of GaAs1-xNx alloy --- p.4 / Chapter 1.4 --- Advantages of using photoluminescence (PL) --- p.7 / Chapter 1.5 --- Our work --- p.9 / Chapter Chapter 2 --- Experimental setup and procedures / Chapter 2.1 --- Growth conditions of GaAs1-xNx on (001) GaAs --- p.10 / Chapter 2.2 --- X-ray diffraction / Chapter 2.2.1 --- Setup --- p.12 / Chapter 2.2.2 --- Types of X-ray measurements --- p.12 / Chapter 2.3 --- PL measurements / Chapter 2.3.1 --- Setup --- p.14 / Chapter 2.3.2 --- Types of PL measurement --- p.16 / Chapter Chapter 3 --- Results and discussions / Chapter 3.1 --- X-ray diffraction of GaAs1-xNx/GaAs / Chapter 3.1.1 --- GaAs1-xNx/GaAs grown using H2 as carrier gas --- p.17 / Chapter 3.1.2 --- GaAs1-xNx/GaAs grown using N2 as carrier gas --- p.28 / Chapter 3.1.3 --- Peak widths of the X-ray rocking curves of GaAs1-xNx/GaAs --- p.30 / Chapter 3.2 --- Room temperature (RT) and 10K PL of GaAs1-xNx/GaAs / Chapter 3.2.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.32 / Chapter 3.2.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.44 / Chapter 3.3 --- Excitation power density (EPD) dependent PL studies of GaAs1-xNx/GaAs / Chapter 3.3.1 --- The energy of the NBE peak of GaAs1-xNx/GaAs --- p.49 / Chapter 3.3.2 --- The width of the NBE peak of GaAs1-xNx/GaAs --- p.55 / Chapter 3.4 --- Temperature dependent PL studies of GaAs1-xNx/GaAs --- p.57 / Chapter Chapter 4 --- Conclusions --- p.62 / References --- p.63

Thesis (Ph. D.)--Ohio State University, 2006. / Title from first page of PDF file. Includes bibliographical references (p. 232-237).

The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN film, nitridation and low temperature buffer layer were applied to overcome the issue of lattice mismatch. Low temperature and long period nitridation process shows better improved of optical properties and crystal quality of GaN film. Buffer layer grown with slightly Ga-rich, substrate temperature at 522¢J, for 2 minutes leads to better GaN film. High substrate temperature and sufficient nitrogen to gallium ratio are two important factors to control the growth of the good quality GaN epilayer. Chemical etching and observation of surface reconstructions were used to characterize the polarity of group III nitrides. The Ga-polarity GaN film shows 2x surface reconstruction with high chemical resistance while the N-polarity is sensitive to chemical and displays the 3x reconstruction pattern. The process of indium incorporated with GaN is very sensitive to growth temperature. The indium content decreased with increasing the substrate temperature and also decreased along the growth direction. The N-polar GaN with an indium-facilitated growth technique was also studied. Upon the incorporation of indium during growth, the photoluminescence intensity and electron mobility of GaN has been enhanced by a factor of 15 and 6 respectively. The electron concentration drastically increases by several orders of magnitude. The biaxial strain of GaN film estimated with Micro-Raman technique reduces from 0.6729 to 0.5044GPa. The full-widths at half maximum of asymmetric (10-12) x-ray reflection which related to the density of overall threading dislocations increases from 593 to744 arcsec. In contrast, the symmetric (0002) reflection related only to threading dislocations having a non-zero c-component Burgers vectors reduces from 528 to 276 arcsec. The enhancement of GaN optical property is generally attributed to the reduction of non-zero c-component dislocations. The reduction in density is confirmed by cross-sectional transmission electron microscopy.

III-nitrides are a promising material system with unique material properties, which allows them to be utilized in a variety of semiconductor devices. III-nitrides grown by NH3-MOMBE are typically grown with high carbon levels (> 1021 cm-3) as a result of the incomplete surface pyrolysis of the metal-organic sources. Recent research has involved the compensating nature of carbon in III-nitrides to produce semi-insulating films, which can provide low-leakage buffer layers in transistor devices. The aim of this work is to investigate the possibility of forming a 2DEG, which utilizes the highly carbon-doped GaN layers grown by NH3-MOMBE to produce low-leakage buffer layers in the fabrication of HEMTs. These low leakage GaN buffers would provide increased HEMT performance, with better pinch-off, higher breakdown voltages and increased power densities. Additionally, methods of controlling and/or reducing the incorporation of carbon will be undertaken in an attempt to broaden the range of possible device applications for NH3-MOMBE. To realize these transistor devices, optimization and improved understanding of the growth conditions for both GaN and AlGaN will be explored with the ultimate goal of determining the feasibility of III-nitride transistors grown by NH3-MOMBE.

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 126-147). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 168-180).

Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / Committee Chair: Honsberg, Christiana; Committee Co-Chair: Ferguson, Ian; Committee Member: Citrin, David; Committee Member: Klein, Benjamin; Committee Member: Rohatgi, Ajeet; Committee Member: Snyder, Robert. Part of the SMARTech Electronic Thesis and Dissertation Collection.