Silicon-on-Insulator (SOI) micro-ring resonators (MRRs) are versatile elements in high-density integrated optics telecommunication systems. However, small inaccuracies in the fabrication process intensely deteriorate the response of SOI MRRs. By utilizing the racetrack resonator structures with strong coupling abilities, one can improve the fabrication tolerance. For the SOI racetrack resonators, the FSR is usually large. By introducing gratings into SOI racetrack resonators, the mutual mode coupling between the clockwise and counterclockwise modes can be induced and result in the resonance splitting. The grating-assisted SOI racetrack resonators can increase the operation wavelength and open up the possibility to overcome this limitation. In this thesis, we first use the 2-D FDTD method with the effective index method (EIM) to obtain the transmission spectra of the SOI racetrack resonators. The transmission spectra are then fitted by using the time-domain coupled mode theory (CMT) to obtain the quality factor and optical parameters of the SOI racetrack resonators. Next, we demonstrate the characteristics of mode splitting resulted from the mutual mode coupling between the clockwise and counterclockwise modes in the grating-assisted racetrack resonators by utilizing both the CMT and the 2-D FDTD method with the EIM. By tuning the grating configurations, such as the length or the structure of sidewall gratings, one can obtain the desired transmission spectrum of the grating-assisted racetrack resonators. Finally, we numerically investigate the temperature-dependent spectral characterics of the grating-assisted SOI racetrack resonator by taking the thermal-optic responce of the SOI materials into account. The thermal sensitivity of this device is 95.38 pm/¢XC, and the calculted properties can help the further designs based on the grating-assisted SOI racetrack resonators.

Hydroxyl terminated polybutadiene (HTPB) based polyurethanes (PUs) are low modulus materials and degrade easily at low temperature. Polycarbodiimide (PCDI) and polysiloxane (PSi) are reactive-type fillers when formed by carbodimidzation and sol-gel process, respectively. During the combustion, PCDI and PSi give off non-toxic, non-corrosive volatile gases, and finally form carbonaceous and siliceous chars. In this study, modified PUs were prepared by incorporating PCDI or PSi into PUs to give high carbon, nitrogen and silicon materials. These modified PUs are kinds of organic-inorganic hybrids with higher modulus and higher thermal stability than HTPB-based PUs. In addition, new silicone based insulation materials were prepared by mixing two silicone rubber materials LSR-2670 and RTV-627 from GE Silicones, in order to improve the heat insulation and to reduce the ablation rate. These inhibitors can keep the rocket motor from the high temperature ablation for a long time, especially castable silicone based heat insulations for the case of the ramjet engines. The mechanical properties at room temperature and the thermal stability of these modified PUs and silicone rubbers were investigated using a tensile tester and a thermogravimetric analyzer (TGA). ATR/FTIR (Attenuated total reflectance / Fourier transform infrared) technique is applied to monitor the synthesis process of PCDI and to examine the change of surface chemistry of insulator before and after thermal degradation via TGA. TGA coupled with FTIR (TGA/FTIR) was used to analyze the kinetics and the mechanism of thermal degradation under nitrogen and/or air. The Friedman and Kissinger methods of analysis were used for calculating the activation energy of degradation from dynamic TGA. The modified PUs (HIPTD-40%Psi¤ÎHIPTD-30%PMPS-PSi) with average activation energy of 88 and 112 kcal/mole (0.5¡Õ£\¡Õ0.9, under N2) and the modified silicone rubber (LR-5%HTB) with activation energy of 46.2~67.0 kcal/mole (0.1¡Õ£\¡Õ0.9, under N2) and 34.0~59.1 kcal/mole (0.1¡Õ£\¡Õ0.9, under air).The maximum degradation temperature (Tmax) and char yield (CY) of thermal degradation were estimated from a series of experiments with heating rates of 1, 3, 5, 10, 20, 30, 40 and 50 ¢J/min, under nitrogen or air. It is apparent that the maximum degradation temperature is dependent on heating rate. By assuming the heating rate for the insulator used in a rocket operating environment is about 5000¢J/min, Tmax calculated for the modified PUs (HIPTD-40%PSi and HIPTD-30%PMPS-PSi under N2) are found as 538 and 562¢J and for the modified silicone rubber (LR-5%HTB under N2 and air) are found as 576 and 562¢J, respectively. CY calculated for the modified silicone rubber (LR-5%HTB under N2 and air) is found as 71.5% and 66.2%. The morphology of modified PUs and silicone rubbers before and after thermal degradation via TGA was observed by optical and scanning electron microscope (SEM).

This thesis aims to contribute to the debates on the Justice and Development Party (JDP) era Turkish foreign policy by putting Turkey into the regional security complex theory and examines changes and continuities of Turkey&rsquo / s traditional cautious, relatively &ldquo / passive&rdquo / role and &ldquo / relative indifference&rdquo / stance towards the Middle East security complex. Hence, the framework of analysis is the regional security complex theory, attributed roles and role changes of Turkey within regional security complexes. This study, with a historical perspective and within the framework of the regional security complex theory, questions continuities and changes in the JDP period Turkish foreign policy, and comes to the conclusion that in the JDP era, Turkey&rsquo / s role is going beyond the insulator state function to the &ldquo / interface logic&rdquo / which adopts a loose form of geographical boundaries.

No description available.

In dieser Arbeit wird die Erzeugung permanenter Nanostrukturen durch den Beschuss mit langsamen (v < 5x105m/s) hochgeladenen (q < 40) Ionen auf den Oberflächen der Ionenkristalle CaF2 sowie KBr untersucht. Die systematische Analyse der Probenoberfläche mittels Raster-Kraft-Mikroskopie liefert detaillierte Informationen über den Einfluss von potentieller und kinetischer Projektilenergie auf den Prozess der Strukturerzeugung. Der individuelle Einfall hochgeladener Ionen auf der KBr(001)-Oberfläche kann die Erzeugung monoatomar tiefer, lochartiger Strukturen -Nanopits- mit einer lateralen Ausdehnung von wenigen 10nm initiieren. Das Volumen dieser Löcher und damit die Anzahl gesputterter Sekundärteilchen zeigt eine lineare Abhängigkeit von der potentiellen Energie der Projektile. Für das Einsetzen der Locherzeugung konnte ein von der Projektilgeschwindigkeit abhängiger Grenzwert der potentiellen Energie E_grenz^pot (Ekin) gefunden werden. Auf der Basis der defekt-induzierten Desorption durch Elektronen wurde unter Einbeziehung von Effekten der Defektagglomeration ein konsistentes mikroskopisches Modell für den Prozess der Locherzeugung konzipiert. Für die CaF2(111)-Oberfläche kann die aus jüngsten Studien bekannte, individuelle Erzeugung hügelartiger Nanostrukturen -Nanohillocks- durch hochgeladene Ionen in dieser Arbeit auch für kleinste kinetische Energien (E_kin < 150eVxq) verifiziert werden. Die potentielle Energie der einfallenden Ionen wird damit erstmalig zweifelsfrei als alleinige Ursache der Nanostrukturerzeugung identifiziert. Zudem zeigt sich bei geringer Projektilgeschwindigkeit eine Verschiebung der potentiellen Grenzenergie zur Hillock-Erzeugung. Im Rahmen einer Kooperation an der Technischen Universität Wien durchgeführte Simulationsrechnungen auf der Grundlage des inelastischen thermal spike-Modells zeigen, dass die individuelle Hillock-Erzeugung durch hochgeladene Ionen mit einer lokalen Schmelze des Ionenkristalls verknüpft werden kann. Dem essentiellen Einfluss der Elektronenemission während der Wechselwirkung des hochgeladenen Ions mit der Oberfläche auf den Prozess der Nanostrukturerzeugung wird in komplementären Untersuchungen zur Sekundärelektronenstatistik Rechnung getragen. Erstmalig werden dabei Gesamtelektronenausbeuten für Isolatoroberflächen bei kleinsten Projektilgeschwindigkeiten (v < 1x10^5 m/s) bestimmt. Für Geschwindigkeiten v < 5x10^4 m/s findet sich für die Isolatoroberfläche in starkem Kontrast zu Metallen ein signifikanter Abfall der Elektronenausbeute mit sinkender kinetischer Energie. Mögliche Ursachen dieses Effektes werden auf der Grundlage unterschiedlicher Modelle diskutiert.

Developments in automotive (particularly hybrid electric vehicles), aerospace, and energy production industries over the recent years have led to expanding research interest in integrated circuit (IC) design toward high-temperature applications. A high-voltage, high-temperature SOI process allows for circuit design to expand into these extreme environment applications. Nearly all electronic devices require a reliable supply voltage capable of operating under various input voltages and load currents. These input voltages and load currents can be either DC or time-varying signals. In this work, a stable supply voltage for embedded circuit functions is generated on chip via a voltage regulator circuit producing a stable 5-V output voltage. Although applications of this voltage regulator are not limited to gate driver circuits, this regulator was developed to meet the demands of a gate driver IC. The voltage regulator must provide reliable output voltage over an input range from 10 V to 30 V, a temperature range of −50 ºC to 200 ºC, and output loads from 0 mA to 200 mA. Additionally, low power stand-by operation is provided to help reduce heat generation and thus lower operating junction temperature. This regulator is based on the LM723 Zener reference voltage regulator which allows stable performance over temperature (provided proper design of the temperature compensation scheme). This circuit topology and the SOI silicon process allow for reliable operation under all application demands. The designed voltage regulator has been successfully tested from −50 ºC to 200 ºC while demonstrating an output voltage variation of less than 25 mV under the full range of input voltage. Line regulation tests from 10 V to 35 V show a 3.7-ppm/V supply sensitivity. With the use of a high-temperature ceramic output capacitor, a 5-nsec edge, 0 to 220 mA, 1-µsec pulse width load current induced only a 55 mV drop in regulator output voltage. In the targeted application, load current pulse widths will be much shorter, thereby improving the load transient performance. Full temperature and input voltage range tests reveal the no-load supply current draw is within 330 µA while still providing an excess of 200 mA of load current upon demand.

Microbial colonization on the surface of silicone rubber high voltage outdoor insulators often results in the formation of highly hydrated biofilm that influence the surface properties, such as surface hydrophobicity. The loss of hydrophobicity might lead to dry band formation, and, in the worst cases, flashover and failure of the insulator. In this work, the biocidal effects of various antimicrobial compounds in silicone rubber materials were determined. These materials were evaluated according to an ISO standard for the antimicrobial activity against the growth of aggressive fungal strains, and microorganisms that have been found colonizing the surfaces of outdoor insulators in several areas in the world. Several compounds suppressed microbial growth on the surfaces of the materials without compromising the material properties of the silicone rubber. A commercial biocide and thymol were very effective against fungal growth, and sodium benzoate could suppress the fungal growth to some extent. Thymol could also inhibit algal growth. However, methods for preservation of the antimicrobial agents in the bulk of the material need to be further developed to prevent the loss of the compounds during manufacturing. Biofilm formation affected the surface hydrophobicity and complete removal of the biofilm was not achieved through cleaning. Surface analysis confirmed that traces of microorganisms were still present after cleaning. Further, surface modification of the silicone rubber was carried out to study how the texture and roughness of the surface affect biofilm formation. Silicone rubber surfaces with regular geometrical patterns were evaluated to determine the influence of the surface texture on the extent of microbial growth in comparison with plane silicone rubber surfaces. Silicone rubber nanocomposite surfaces, prepared using a spray-deposition method that applied hydrophilic and hydrophobic nanoparticles to obtain hierarchical structures, were studied to determine the effects of the surface roughness and improved hydrophobicity on the microbial attachment. Microenvironment chambers were used for the determination of microbial growth on different modified surfaces under conditions that mimic those of the insulators in their outdoor environments. Different parts of the insulators were represented by placing the samples vertically and inclined. The microbial growth on the surfaces of the textured samples was evenly distributed throughout the surfaces because of the uniform distribution of the water between the gaps of the regular structures on the surfaces. Microbial growth was not observed on the inclined and vertical nanocomposite surfaces due to the higher surface roughness and improved surface hydrophobicity, whereas non-coated samples were colonized by microorganisms. / <p>QC 20151002</p>

Atomically two-dimensional (2-D) graphene, as well as the hexagonal boron nitride dielectric have been and are continuing to be widely investigated for the next generation nanoelectronic devices. More recently, other 2-D materials and electronic systems including the surface states of topological insulators (TIs) and monolayers of transition metal dichalcogenides (TMDs) have also attracted considerable interest. In this work I have focused on these latter two material systems on possible device applications. TIs are characterized by an insulating bulk band gap and metallic Dirac surface states which are spin-polarized. Here, the electronic structures of bulk and thin film TIs are studied using ab-initio density functional theory (DFT). Band inversion, an essential characteristic of TIs, is shown in the bulk band structures. Properties of TI surface bands in thin film such as the critical film thickness to induce a gap, the thickness dependent gap size, and the localization length of surface states are reported. Effects of crystalline dielectric materials on TI surface states are also addressed by ab-initio calculations. I discuss the sensitivity of Dirac point degeneracy and linear band dispersion of TI with respect to different dielectric surface terminations as well as different relative atom positions of the dielectric and TI. Additionally, this work presents research on exciton condensation in TI using a tight-binding model combined with self-consistent non-local Hartree-Fock mean-field theory. Possibility of exciton condensation in the TI Bi₂Se₃ thin film is assessed. Non-equilibrium Green's function (NEGF) simulations with the atomistic tight-binding (TB) Hamiltonian are carried out to explore the performance of metal-oxide-semiconductor field-effect-transistor (MOSFET) and tunnel field-effect-transistor (TFET) based on the Bi₂Se₃ TI thin film. How the high dielectric constant of Bi₂Se₃ affects the performance of MOSFET and TFET is presented. Bulk TMDs such as MoS₂, WS₂ and others are the van der Waals-bonded layered material, much like graphite, except monolayer (and Bulk) TMDs have a large band gap in-contrast to graphene (and graphite). Here, the performance of nanoscale monolayer MoS₂ n-channel MOSFETs are examined through NEGF simulations using an atomistic TB Hamiltonian. N- and p-channel MOSFETs of various monolayer TMDs are also compared by the same approach. I correlate the performance differences with the band structure differences. Finally, ab-initio calculations of adatom doping effects on the monolayer MoS₂ is shown. I discuss the most stable atomic configurations, the bonding type and the amount of charge transfer from adatom to the monolayer MoS₂. / text

The hydrogen (H2) gas sensing mechanism driving 3C-SiC resistive gas sensors is investigated in this work in which two hypotheses are proposed. One hypothesis involves the surface adsorption of H2 on the sensor surface with the adsorbed molecules influencing the flow of current in a resistive gas sensor, termed the surface adsorption detection mechanism. The second hypothesis includes the transfer of heat from the sensor to the gas, producing a change in the temperature of the device when the heat transfer characteristics of the gas change, termed the thermal detection mechanism. The heat transfer characteristics of the gas are dependent on the thermal conductivity of the gas, a property which is a strong function of gas composition. Thus, the thermal detection mechanism mainly detects changes in the thermal conductivity of a gas or gas mixture.Initial experiments suggested the surface adsorption mechanism as the detection mechanism of resistive 3C-SiC gas sensors. However, these experiments were performed in the absence of device temperature measurements. Recent experiments in which the device temperature was measured with a resistance temperature detector (RTD) in thermal contact with the device strongly support the thermal detection mechanism as being responsible for hydrogen gas detection. Experimental observations show the temperature of the resistive 3C-SiC hydrogen gas sensors changes greatly with changing hydrogen gas composition. For example, a 3C-SiC/SOI resistive sensor biased at 10 Vdc displayed a change in temperature from ~400°C to ~216°C, correlating to a change in current from ~41 mA to ~6mA, upon the introduction of 100% H2. The this 3C-SiC/SOI resistive sensor, this large decrease in temperature caused a large increase in resistance which is detected as a decrease in current. Several different experiments have also been performed to confirm the thermal detection mechanism hypothesis.

Στην εργασία αυτή γίνεται προσομοίωση της Διασταυρούμενης Διαμόρφωσης Φάσης που λαμβάνει χώρα σε ένα SOI κυματοδηγό υπό την προϋπόθεση της μηδενικής διασποράς. Για να καταλήξουμε στο μοντέλο προσομοίωσης παρουσιάζονται τα μη-γραμμικά οπτικά φαινόμενα τα οποία συμμετέχουν στο υπό μελέτη φαινόμενο καθώς επίσης και τα χαρακτηριστικά του κυματοδηγού που επιδρούν στην διάδοση του παλμού. Το τελικό μοντέλο λαμβάνει επίσης υπόψη του τις βασικές ιδιότητες του πυριτίου και τις διεργασίες που γίνονται σ’ αυτό κατά την διάρκεια της αλληλεπίδρασης του υλικού με την οπτική ακτινοβολία. Τα αποτελέσματα που δίνει το μοντέλο είναι η επίδραση της έντασης του παλμού άντλησης στην μεταβολή της φάσης του διαδιδόμενου κύματος και κατά συνέπεια την μεταβολή του μήκους κύματος. / In this work becomes simulation of Cross-Phase Modulation (XPM) that takes place in a silicon-on-insulator (SOI) waveguide under the condition less-dispersion. In order to we lead to the model of simulation are presented the nonlinear optical phenomena which participate in under study phenomenon as well as the characteristics of waveguide that affect in the propagation of pulses. The final model takes into consideration the basic properties of silicon and the activities that become in this at the duration of interaction of material with the optical radiation. The results that it gives the model are the effect of intensity of pump pulse in the change of phase of propagated wave and accordingly the change of wavelength.