Für den Bau von Biogasanlagen werden die aktuellen Fördermöglichkeiten von Bund und Land aufgezeigt. Zudem enthält das kleine Nachschlagewerk zahlreiche, speziell für Sachsen ausgewählte Links zu Beratungsangeboten, Planungshilfen, Wirtschaftlichkeitsrechner, Schulungen und Fachliteratur. Übersichten zu Vergütungssätzen für die ins Stromnetz eingespeisten Kilowattstunden bei unterschiedlichen Einsatzstoffen und -mengen verdeutlichen die Eckpunkte des Erneuerbare-Energien-Gesetzes 2009 und der Novelle, die ab 2012 in Kraft tritt.

Silicon nanowires are a nanostructure consisting of elongated crystals of silicon. Like many nanostructures, silicon nanowires have properties that change with size. In particular, silicon nanowires have a band-gap that is tuneable with the diameter of the nanowire. They tend to absorb a large portion of the light incident upon them and they form a highly textured surface when grown on an otherwise flat substrate. These properties indicate silicon nanowires are good candidates for use in solar cells. Nanostructured silicon, in the form of nanocrystalline silicon, has been used to produce thin film solar cells. Solar cells produced using silicon nanowires could combine the properties of the silicon nanowires with the low material costs and good stability of nanocrystalline based solar cells. This thesis describes the process of optimisation of silicon nanowire growth on a plasma enhanced chemical vapour deposition system. This optimised growth of silicon nanowires is then used to demonstrate a prototype solar cell using silicon nanowires and amorphous silicon. Several steps had to be accomplished to reach this goal. The growth of silicon nanowires was optimised through a number of steps to produce a high density film covering a substrate. Developments were made to the standard deposition technique and it was found that by using pulsed plasma enhanced chemical vapour deposition the density of nanowire growth could be improved. Of a range of catalysts trialled, gold and tin were found to be the most effective catalysts for the growth of silicon nanowires. A range of substrates was investigated and the nanowires were found to grow with high density on transparent conductive oxide coated glass substrates, which would allow light to reach the nanowires when they were used as part of a solar cell. The silicon nanowires were combined with doped and intrinsic amorphous silicon layers with the aim to create thin film photovoltaic devices. Several device designs using silicon nanowires were investigated. The variant that showed the highest efficiency used doped silicon nanowires as a p-layer which was coated with intrinsic and n-type amorphous silicon. By the characterisation and optimisation of the silicon nanowires, a prototype silicon nanowire solar cell was produced. The analysis of these prototype thin film devices, and the nanowires themselves, indicated that silicon nanowires are a promising material for photovoltaic applications.

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

Diss. (sammanfattning) Uppsala : Sveriges lantbruksuniv. / Härtill 3 uppsatser.

Thesis (M.E. (Elec.) (Hons.)) -- University of Western Sydney, 2002. / "Submitted for the Master degree of Electrical Engineering (Honours)" Includes bibliographical references (leaves 131-136).

Univ., Diss--Bochum, 1999.

Thesis (M.U.A.)--Virginia Polytechnic Institute and State University, 1993. / Vita. Abstract. Includes bibliographical references (leaves 109-126). Also available via the Internet.

Originally presented as the author's Thesis (doctoral)--Fernuniversität Hagen, 2006. / Includes bibliographical references (p. 556-604).

Thesis (Ph. D.)--University of Toronto, 2007. / Source: Dissertation Abstracts International, Volume: 68-06, Section: A, page: 2278. Includes bibliographical references (leaves 173-185).

Thesis (M.S.)--Ohio University, March, 2008. / Title from PDF t.p. Includes bibliographical references.