O ruído de baixa frequência é um limitador de desempenho em circuitos analógicos, digitais e de radiofrequência, introduzindo ruído de fase em osciladores e reduzindo a estabilidade de células SRAM, por exemplo. Transistores de efeito de campo de metalóxido- semicondutor (MOSFETs) são conhecidos pelos elevados níveis de ruído 1= f e telegráfico, cuja potência pode ser ordens de magnitude maior do que a observada para ruído térmico para frequências de até dezenas de kHz. Além disso, com o avanço da tecnologia, a frequência de corner —isto é, a frequência na qual as contribuições dos ruídos térmico e shot superam a contribuição do ruído 1= f — aumenta, tornando os ruídos 1= f e telegráfico os mecanismos dominantes de ruído na tecnologia CMOS para frequências de até centenas de MHz. Mais ainda, o ruído de baixa frequência em transistores nanométricos pode variar significativamente de dispositivo para dispositivo, o que torna a variabilidade de ruído um aspecto importante para tecnologias MOS modernas. Para assegurar o projeto adequado de circuitos do ponto de vista de ruído, é necessário, portanto, identificar os mecanismos fundamentais responsáveis pelo ruído de baixa frequência em MOSFETs e desenvolver modelos capazes de considerar as dependências do ruído com geometria, polarização e temperatura. Neste trabalho é proposta uma técnica para análise de ruído de baixa frequência baseada na autocorrelação dos espectros de ruído em função de parâmetros como frequência, polarização e temperatura. A metodologia apresentada revela informações importantes sobre os mecanismos responsáveis pelo ruído 1= f que são difíceis de obter de outras formas. As análises de correlação realizadas em três tecnologias CMOS comerciais (140 nm, 65 nm e 45 nm) fornecem evidências contundentes de que o ruído de baixa frequência em transistores MOS tipo-n e tipo-p é composto por um somatório de sinais telegráficos termicamente ativados. / Low-frequency noise (LFN) is a performance limiter for analog, digital and RF circuits, introducing phase noise in oscillators and reducing the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known for their particularly high 1= f and random telegraph noise levels, whose power may be orders of magnitude larger than thermal noise for frequencies up to dozens of kHz. With the technology scaling, the corner frequency — i.e. the frequency at which the contributions of thermal and shot noises to noise power overshadow that of the 1= f noise — is increased, making 1= f and random telegraph signal (RTS) the dominant noise mechanism in CMOS technologies for frequencies up to several MHz. Additionally, the LFN levels from device-to-device can vary several orders of magnitude in deeply-scaled devices, making LFN variability a major concern in advanced MOS technologies. Therefore, to assure proper circuit design in this scenario, it is necessary to identify the fundamental mechanisms responsible for MOSFET LFN, in order to provide accurate LFN models that account not only for the average noise power, but also for its variability and dependences on geometry, bias and temperature. In this work, a new variability-based LFN analysis technique is introduced, employing the autocorrelation of multiple LFN spectra in terms of parameters such as frequency, bias and temperature. This technique reveals information about the mechanisms responsible for the 1= f noise that is difficult to obtain otherwise. The correlation analyses performed on three different commercial mixed-signal CMOS technologies (140-nm, 65-nm and 40-nm) provide strong evidence that the LFN of both n- and p-type MOS transistors is primarily composed of the superposition of thermally activated random telegraph signals (RTS).

O ruído de baixa frequência é um limitador de desempenho em circuitos analógicos, digitais e de radiofrequência, introduzindo ruído de fase em osciladores e reduzindo a estabilidade de células SRAM, por exemplo. Transistores de efeito de campo de metalóxido- semicondutor (MOSFETs) são conhecidos pelos elevados níveis de ruído 1= f e telegráfico, cuja potência pode ser ordens de magnitude maior do que a observada para ruído térmico para frequências de até dezenas de kHz. Além disso, com o avanço da tecnologia, a frequência de corner —isto é, a frequência na qual as contribuições dos ruídos térmico e shot superam a contribuição do ruído 1= f — aumenta, tornando os ruídos 1= f e telegráfico os mecanismos dominantes de ruído na tecnologia CMOS para frequências de até centenas de MHz. Mais ainda, o ruído de baixa frequência em transistores nanométricos pode variar significativamente de dispositivo para dispositivo, o que torna a variabilidade de ruído um aspecto importante para tecnologias MOS modernas. Para assegurar o projeto adequado de circuitos do ponto de vista de ruído, é necessário, portanto, identificar os mecanismos fundamentais responsáveis pelo ruído de baixa frequência em MOSFETs e desenvolver modelos capazes de considerar as dependências do ruído com geometria, polarização e temperatura. Neste trabalho é proposta uma técnica para análise de ruído de baixa frequência baseada na autocorrelação dos espectros de ruído em função de parâmetros como frequência, polarização e temperatura. A metodologia apresentada revela informações importantes sobre os mecanismos responsáveis pelo ruído 1= f que são difíceis de obter de outras formas. As análises de correlação realizadas em três tecnologias CMOS comerciais (140 nm, 65 nm e 45 nm) fornecem evidências contundentes de que o ruído de baixa frequência em transistores MOS tipo-n e tipo-p é composto por um somatório de sinais telegráficos termicamente ativados. / Low-frequency noise (LFN) is a performance limiter for analog, digital and RF circuits, introducing phase noise in oscillators and reducing the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known for their particularly high 1= f and random telegraph noise levels, whose power may be orders of magnitude larger than thermal noise for frequencies up to dozens of kHz. With the technology scaling, the corner frequency — i.e. the frequency at which the contributions of thermal and shot noises to noise power overshadow that of the 1= f noise — is increased, making 1= f and random telegraph signal (RTS) the dominant noise mechanism in CMOS technologies for frequencies up to several MHz. Additionally, the LFN levels from device-to-device can vary several orders of magnitude in deeply-scaled devices, making LFN variability a major concern in advanced MOS technologies. Therefore, to assure proper circuit design in this scenario, it is necessary to identify the fundamental mechanisms responsible for MOSFET LFN, in order to provide accurate LFN models that account not only for the average noise power, but also for its variability and dependences on geometry, bias and temperature. In this work, a new variability-based LFN analysis technique is introduced, employing the autocorrelation of multiple LFN spectra in terms of parameters such as frequency, bias and temperature. This technique reveals information about the mechanisms responsible for the 1= f noise that is difficult to obtain otherwise. The correlation analyses performed on three different commercial mixed-signal CMOS technologies (140-nm, 65-nm and 40-nm) provide strong evidence that the LFN of both n- and p-type MOS transistors is primarily composed of the superposition of thermally activated random telegraph signals (RTS).

Les travaux de la thèse ont porté sur l'étude, la réalisation, la caractérisation et la modélisation de films 2D à base de nanotubes de carbone. Dans le premier chapitre nous avons présenté des généralités sur les nanotubes de carbone. Ensuite, nous nous sommes intéressés aux jonctions nanotube-nanotube et plus particulièrement à la modélisation du transport dans les différents types de jonction (M/M), (M/SC) et (SC/SC). Avec le deuxième chapitre nous avons entamé l'étude des films 2D à base de nanotubes de carbone. Dans un premier temps nous nous sommes intéressés au transport électrique dans ces structures fortement inhomogènes, en particulier en décrivant les modèles analytiques rendant compte du phénomène de percolation tant au niveau de la conductance que du bruit en 1/f. La seconde partie du chapitre est entièrement consacrée à la fabrication et la caractérisation physico-chimique des films 2D L'objectif principal du troisième chapitre est la modélisation des films 2D de nanotubes de carbone. Par rapport aux autres modèles utilisés dans la littérature, le modèle développé dans cette partie est le seul à prendre en compte la nature physique de chaque jonction tube-tube : (M/M) ou (M/SC) ou (SC/SC). Notre modèle prend ainsi en compte les non linéarités des jonctions. La résolution numérique de ce système est optimisée : i) en utilisant la technique MNA, technique dont le principe consiste à linéariser chaque dipôle du circuit. ii) en parallélisant les calculs sur un cluster informatique d'une centaine de cœurs. Pour le calcul du bruit la même technique est utilisée mais avec, dans ce cas, l'utilisation de la méthode du réseau adjoint. Dans le quatrième chapitre, nous avons, dans un premier temps, présentés et analysés nos résultats expérimentaux concernant la mesure de la conductance et du bruit en 1/f. Quelles que soient les conditions de dépôt nous avons toujours observé un comportement de type percolation au niveau des grandeurs mesurées, conductance et niveau de bruit en 1/f. Nous avons utilisé les paramètres d'ajustement des lois de percolation pour comparer et analyser nos résultats. Il en ressort que l'impact du surfactant sur l'homogénéité de la solution, se retrouve au niveau des résultats électriques des couches déposées, montrant l'avantage d'utiliser du sel biliaire. Quant à l'influence de la densité des tubes, comme attendu, la conductance augmente avec celle-ci. Par contre nous avons remarqué que le bruit en 1/f était beaucoup plus sensible à ce paramètre, avec en particulier un changement significatif au niveau des paramètres de percolation en bruit mis en évidence à forte densité de nanotubes. La deuxième partie de ce chapitre est dédiée à la simulation des paramètres électriques de nos structures expérimentales. Nous avons paramétré l'énergie et la largeur des barrières de potentiel entre chaque jonction. Ces paramètres sont ajustés à partir des résultats expérimentaux et sont fonction de la nature du surfactant. Les résultats de ces simulations concernant la conductance et le niveau de bruit en 1/f s'accordent avec les mesures et dans tous les cas les lois de percolation macroscopique sont respectées, ce qui valide nos modèles ainsi que la possibilité d'intégrer de façon réaliste la différence structurale des surfactants. Pour rendre compte de la déviation de la loi macroscopique de percolation du bruit en 1/f, observée sur les films déposés à partir de solution à forte densité de surfactant, nous avons au niveau des simulations introduit et modulé le nombre d'amas (clusters) de nanotubes en fonction de la densité des couches. Là encore le bon accord observé avec les résultats expérimentaux nous permet de valider la présence d'inhomogénéités dues aux clusters de nanotubes dans nos dépôts. / In this thesis we have focused on the fabrication, the characterization, and the modeling of 2D films based on carbon nanotubes.In the first chapter, we have presented general informations on carbon nanotubes. Then we are interested in the nanotube-nanotube junctions and particularly the modeling of transport in different types of junction (M/M), (M/SC) and (SC/SC).In the second chapter we have presented a study of 2D films based on carbon nanotubes. At first we present the electrical transport in these structures strongly inhomogeneous, especially in describing the analytical models accounting for the percolation phenomenon both in the conductance and 1/f noise. The second part of the chapter is devoted entirely to the manufacture and physico-chemical characterization of 2D films.The main objective of the third chapter is the modeling of 2D films of carbon nanotubes. Compared to other models described in the literature, the model developed in this section is the only one that take into account the physical nature of each tube-tube junction (M/M) or (M/SC) or (SC/SC). Our model takes into account the junction nonlinearity. The numerical solution of the system is optimized: i) using the MNA technique whose principle is to linearize each dipole in the circuit. ii) parallelizing computations on a computer cluster of a hundred core. For the noise simulation, the same technique is used but in this case, we have used the adjoint network method. In the fourth chapter, we have, at first, presented and analyzed our experimental results for conductance and 1/f noise. Whatever the deposition conditions we always observed a percolation-like behavior of our results. We used the fitting parameters of the percolation laws to compare and analyze our results. It appears that the impact of the surfactant on the homogeneity of the solution is found in the electrical measurement results of deposited films. As for the influence of the density of the tubes, as expected, the conductance increases with the increase of nanotubes density. We noticed that the 1/f noise was much more sensitive to this parameter, with in particular a significant change in the noise percolation parameters revealed at high density of nanotubes. The second part of this chapter is dedicated to the simulation of the electrical parameters of our experimental structures. These parameters are adjusted on the basis of experimental results and are based on the nature of the surfactant. The results of these simulations for the conductance and 1/f noise agree with measurements and in all cases the macroscopic percolation laws are respected, which validate our models. To bring to the fore the deviation from the noise percolation law observed in films deposited from solution with a high density of surfactant, we have introduced in our simulated structures a number of clusters of nanotubes according to the density of the deposited layers. Once again we observed a good agreement with the experimental results allowing us to validate the presence of clusters of nanotubes in our deposited films.

<p>Beyond graphene, two-dimensional (2D) atomic layered materials have drawn considerable attention as promising semiconductors for future ultrathin layered nano-electronic device applications, transparent/flexible devices and chemical sensors. But, they exhibit high levels of low-frequency due to interfacial scattering (small thickness) and interlayer coupling (large thickness). The sources and mechanisms of low frequency noise should be comprehensive and controlled to fulfill practical applications of two-dimensional transistors. This work seeks to understand the fundamental noise mechanisms of 2D transistors to find ways to reduce the noise level. It also verifies how noise can provide a spectroscopy for analysis of device quality.</p> <p>Most noise analysis tend to apply classical MOSFET models to the noise and electrical transport of 2D transistors, which put together all possible independent noise sources in 2D transistors, ignoring the contact effects. So this could lead to wrong estimation of the noise analysis in 2D transistors. This work demonstrates how the noise components can come from the channel and contact/access regions, all independently adding to the total noise. Each noise source can contribute and may dominate the total noise behavior under the specific gate voltage bias. Herein, the measured noise amplitude in our MoS₂ and MoSe₂ FETs shows a direct crossover from channel- to contact-dominated noise as the gate voltage is increased. The results can be interpreted in terms of a Hooge relationship associated with the channel noise, a transition region, and a saturated high-gate voltage regime whose characteristics are determined by a voltage-independent conductance and noise source associated with the metallurgical contact and the interlayer resistance. The approach for separating channel contributions from those contact/access region allows clear evaluation of the channel noise mechanism and also can be used to explain the qualitative differences in the transition regions between contact- and channel-dominated regimes for various devices.</p>

Scope and contents: The static and dynamic electrical characteristics of silicon n-channel MOS FETs are studied down to cryogenic temperatures. Particular emphasis is directed towards the effect of interface states on the temperature dependence of both the pinch-off voltage and 1/f noise. / No abstract included. / Thesis / Master of Engineering (MEngr)

No description available.

No description available.

Noise in electronic circuits can sometimes cause problems. It is especially problematic in for example high sensitive sensors and high end audio and video equipment. In audio and video equipment the noise will make its way into the sound and picture reducing the overall quality. Sensors that are constructed to sense extremely small changes can only pick up changes larger than the noise floor of the circuit. By lowering the noise, sensors can achieve higher accuracy.  This thesis presents an ultra low noise solution of the biasing circuitry to the bolometer used in one of FLIR Systems high end cameras. The bolometer uses different adjustable direct current voltage sources and is extremely sensitive to noise. The purpose is to improve the picture quality and the thermal measurement resolution. A prototype circuit was constructed and in the end of the thesis a final circuit with successful result will be presented.

Low-frequency noise (LFN) is characterized using in-house measurement systems in a variety of SiGe HBT generations. As technology scales to improve the performance and integration level, a large low-frequency noise variation in small geometry SiGe HBTs is first observed in 90 GHz peak fT devices. The fundamental mechanism of this geometry dependent noise variation is thought to be the superposition of individual Lorentzian spectra due to the presence of G/R centers in the device. The observed noise variation is the result of a trap quantization effect, and is thus best described by number fluctuation theory rather than mobility fluctuation theory. This noise variation continues to be observed in 120 GHz and 210 GHz peak fT SiGe HBT BiCMOS technology. Interestingly, the noise variation in the 210 GHz technology generation shows anomalous scaling behavior below about 0.2-0.3um2 emitter geometry, where the noise variation rapidly decreases. Data shows that the collector current noise is no longer masked by the base current noise as it is in other technology generations, and becomes the dominant noise source in these tiny 210 GHz fT SiGe HBTs. The proton response of LFN in SiGe HBTs is also investigated in this thesis. The results show that the relative increase of LFN is minor in transistors with small emitter areas, but significant in transistors with large emitter areas after radiation. A noise degradation model is proposed to explain this observed geometry dependent LFN degradation. A 2-D LFN simulation is applied to SiGe HBTs for the first time in order to shed light on the physical mechanisms responsible for LFN. A spatial distribution of base current noise and collector current noise reveals the relevant importance of the physical locations of noise sources. The impact of LFN in SiGe HBTs on circuits is also examined. The impact of LFN variation on phase noise is demonstrated, showing VCOs with small geometry devices have relatively large phase noise variation across samples.

The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers  for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices. High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks. / <p>QC 20151130</p>