The representation of terminological knowledge may naturally lead to terminological cycles. In addition to descriptive semantics, the meaning of cyclic terminologies can also be captured by fixed-point semantics, namely, greatest and least fixed-point semantics. To gain a more profound understanding of these semantics and to obtain inference algorithms as well as complexity results for inconsistency, subsumption, and related inference tasks, this paper provides automata theoretic characterizations of these semantics. More precisely, the already existing results for FL₀ are extended to the language ALN, which additionally allows for primitive negation and number-restrictions. Unlike FL₀, the language ALN can express inconsistent concepts, which makes non-trivial extensions of the characterizations and algorithms necessary. Nevertheless, the complexity of reasoning does not increase when going from FL₀ to ALN. This distinguishes ALN from the very expressive languages with fixed-point operators proposed in the literature. It will be shown, however, that cyclic ALN-terminologies are expressive enough to capture schemata in certain semantic data models.

Whereas matching in Description Logics is now relatively well investigated, there are only very few formal results on matching under additional side conditions, though these side conditions were already present in the original paper by Borgida and McGuinness introducing matching in DLs. The present report closes this gap for the DL ALN and its sublanguages.

Approximation is a new inference service in Description Logics first mentioned by Baader, Küsters, and Molitor. Approximating a concept, defined in one Description Logic, means to translate this concept to another concept, defined in a second typically less expressive Description Logic, such that both concepts are as closely related as possible with respect to subsumption. The present paper provides the first in-depth investigation of this inference task. We prove that approximations from the Description Logic ALC to ALE always exist and propose an algorithm computing them. As a measure for the accuracy of the approximation, we introduce a syntax-oriented difference operator, which yields a concept description that contains all aspects of the approximated concept that are not present in the approximation. It is also argued that a purely semantical difference operator, as introduced by Teege, is less suited for this purpose. Finally, for the logics under consideration, we propose an algorithm computing the difference.

Recently, the Description Logic (DL) SHIQ has found a large number of applications. This success is due to the fact that SHIQ combines a rich expressivity with efficient reasoning, as is demonstrated by its implementation in DL systems such as FaCT and RACER. One weakness of SHIQ, however, limits its usability in several application areas: numerical knowledge such as knowledge about the age, weight, or temperature of real-world entities cannot be adequately represented. In this paper, we propose an extension of SHIQ that aims at closing this gap. The new Description Logic Q-SHIQ, which augments SHIQ by additional, 'concrete domain' style concept constructors, allows to refer to rational numbers in concept descriptions, and also to define concepts based on the comparison of numbers via predicates such as < or =. We argue that this kind of expressivity is needed in many application areas such as reasoning about the semantic web. We prove reasoning with Q-SHIQ to be EXPTIME-complete (thus not harder than reasoning with SHIQ) by devising an automata-based decision procedure.

We show how to combine the standard tableau system for the basic description logic ALC and Wolper´s tableau calculus for propositional temporal logic PTL (with the temporal operators ‘next-time’ and ‘until’) in order to design a terminating sound and complete tableau-based satisfiability-checking algorithm for the temporal description logic PTL ALC of [19] interpreted in models with constant domains. We use the method of quasimodels [17, 15] to represent models with infinite domains, and the technique of minimal types [11] to maintain these domains constant. The combination is flexible and can be extended to more expressive description logics or even do decidable fragments of first-order temporal logics.

The increasing demand for high performance and miniature high frequency electronics has motivated the development of Micro-electro Mechanical Systems (MEMS) resonators, some of which have already become a commercial success for the making of filters, duplexers and oscillators used in radio frequency (RF) front-end systems for portable electronic devices. These MEMS components not only enable size, power and cost reduction with respect to their existing counterparts, but also open exciting opportunities for implementing new functionalities when used in large arrays. Almost all MEMS resonators require interfacing with one or more Complementary Metal Oxide Semiconductor (CMOS) integrated circuit components or modules in processing raw signals from individual MEMS devices. Hence, these devices should be integrated with CMOS circuits in an efficient and robust way in order to facilitate their deployment in large arrays with minimal parasitics, delay and power losses due to signal routing and CMOS-MEMS interconnects. Among the MEMS resonators developed to date, Aluminum Nitride (AlN) MEMS Contour-Mode Resonators (CMRs) offer high electro-mechanical coupling coefficient (𝑘𝑡2) and quality factor (Q), and a center frequency (f0) that can be set lithographically by varying the device in-plane dimensions. Also, AlN MEMS CMRs can be fabricated using state-of-the-art CMOS processes and micromachining techniques. These properties allow the synthesis of multi-frequency band-pass filters (BPFs) on a single chip with a low insertion loss and the capability of direct matching to 50 Ω systems. All these advantages, along with a sufficiently mature fabrication process, make AlN CMRs one of the ideal candidates for pursuing their integration with CMOS technology and implement high performance filters with programming capability. In this work we develop for the first time a three-dimensional (3D) heterogeneously integrated AlN MEMS-CMOS platform that enables the realization of such systems as self- healing filters for RF front-ends and programmable filter arrays for cognitive radios. We collaborated with the A*STAR, Institute of Microelectronics (IME), Singapore in the development of AlN MEMS platform on an 8" silicon (Si) wafer; on the other hand, CMOS chips were fabricated in 65 nm International Business Machines Corporation (IBM) and 28 nm Samsung processes. Solder bumps were placed on CMOS chips by Tag and Label Manufacturers Institute (TLMI) under the supervision of Metal Oxide Semiconductor Implementation Service (MOSIS). We demonstrated 3D integrated chip stacks with primary RF signal routing on MEMS and on CMOS for self-healing filters, and showcased the other system via wire-bonding to off-the-shelf CMOS components on a printed circuit board (PCB) because of the inability to continue to have access to the CMOS wafers and bumping processes over the last two years of the project.

Une étape cruciale dans la fabrication des MEMS de haute fréquence est la gravure par plasma de la couche mince d’AlN de structure colonnaire agissant comme matériau piézoélectrique. Réalisé en collaboration étroite avec les chercheurs de Teledyne Dalsa, ce mémoire de maîtrise vise à mieux comprendre les mécanismes physico-chimiques gouvernant la cinétique ainsi que la formation de dommages lors de la gravure de l’AlN dans des plasmas Ar/Cl2/BCl3. Dans un premier temps, nous avons effectué une étude de l’influence des conditions opératoires d’un plasma à couplage inductif sur la densité des principales espèces actives de la gravure, à savoir, les ions positifs et les atomes de Cl. Ces mesures ont ensuite été corrélées aux caractéristiques de gravure, en particulier la vitesse de gravure, la rugosité de surface et les propriétés chimiques de la couche mince. Dans les plasmas Ar/Cl2, nos travaux ont notamment mis en évidence l’effet inhibiteur de l’AlO, un composé formé au cours de la croissance de l’AlN par pulvérisation magnétron réactive et non issu des interactions plasmas-parois ou encore de l’incorporation d’humidité dans la structure colonnaire de l’AlN. En présence de faibles traces de BCl3 dans le plasma Ar/Cl2, nous avons observé une amélioration significative du rendement de gravure de l’AlN dû à la formation de composés volatils BOCl. Par ailleurs, selon nos travaux, il y aurait deux niveaux de rugosité post-gravure : une plus faible rugosité produite par la présence d’AlO dans les plasmas Ar/Cl2 et indépendante de la vitesse de gravure ainsi qu’une plus importante rugosité due à la désorption préférentielle de l’Al dans les plasmas Ar/Cl2/BCl3 et augmentant linéairement avec la vitesse de gravure. / A crucial step in the fabrication of high-frequency MEMS is the etching of the columnar AlN thin film acting as the piezoelectric material. Realized in close collaboration with researchers from Teledyne Dalsa, the objective of this master thesis is to better understand the physico-chemical mechanisms driving the etching kinetics and damage formation dynamics during etching of AlN in Ar/Cl2/BCl3 plasmas. In the first set of experiments, we have studied the influence of the operating parameters of an inductively coupled plasma on the number density of the main etching species in such plasmas, namely positive ions and Cl atoms. These measurements were then correlated with the etching characteristics, in particular the etching rate, the surface roughness, and the chemical properties of the AlN layer after etching. In Ar/Cl2 plasmas, our work has highlighted the inhibition effect of AlO, a compound formed during the AlN growth by reactive magnetron sputtering and not from plasma-wall interactions or from the incorporation of moisture in the columnar nanostructure of AlN. In presence of small amounts of BCl3 in the Ar/Cl2 plasma, we have observed a significant increase of the etching yield of AlN due to the formation of volatile BOCl compounds. Furthermore, our work has demonstrated that there are two levels of roughness following etching: a lower roughness produced by the presence of AlO in Ar/Cl2 plasmas which is independent of the etching rate and a larger roughness due to preferential desorption of Al in Ar/Cl2/BCl3 plasmas which increases linearly with the etching rate.

Submitted by admin tede (tede@pucgoias.edu.br) on 2017-03-30T18:47:48Z No. of bitstreams: 1 RICARDO PEREZ PEREZ.pdf: 927867 bytes, checksum: 62378977001364fbf71dd1b1d1d76954 (MD5) / Made available in DSpace on 2017-03-30T18:47:48Z (GMT). No. of bitstreams: 1 RICARDO PEREZ PEREZ.pdf: 927867 bytes, checksum: 62378977001364fbf71dd1b1d1d76954 (MD5) Previous issue date: 2017-02-01 / The present study is based on an analysis of the intellectual trajectory of Carlos Marighella. Consequently, the construction and ideological line adopted by the ALN, one of the most important guerrilla organizations formed in Brazil after the 1964 civilmilitary coup. Therefore, the established sieve essentially included the writings of Carlos Marighella, founder and leader of the aforementioned revolutionary organization. The incendiary combined the dynamism of practical revolutionary with an intense literary production. Marighella's writings merge with the nature of the leftist guerrilla organization - the ALN - in which the whole ideological and doctrinal structure is initiated, including "organizational principles," "tactical principles," and "strategic principles." Then, it is possible to highlight, in the process of maturity of its texts, the theoretical, ideological and practical construction proposed by Marighella for the ALN that will converge in the action as guiding principle of the organization, bringing to the surface the sui generis contribution of its ideas to the Revolutionary left. The period comprised by the research began in 1948 when party teaching debates initiated due illegality that the Brazilian Communist Party had initiated and ended in 1969 with the assassination of Carlos Marighella for military repression. / O presente trabalho debruça-se numa análise sobre a trajetória intelectual de Carlos Marighella. Ilumina-se, consequentemente, a construção e linha ideológica adotada pela ALN, uma das mais importantes organizações guerrilheiras formadas no Brasil após o golpe civil-militar de 1964. Para tanto, o crivo estabelecido, essencialmente, abarcou os escritos de Carlos Marighella, fundador e líder da organização revolucionária citada. O guerrilheiro conjugou o dinamismo de revolucionário prático a uma produção literária intensa. Os escritos de Marighella fundem-se à natureza da organização guerrilheira de esquerda – a ALN –, neles, toda a estrutura ideológica e doutrinária é lançada, incluindo os ―princípios organizativos‖, os ―princípios táticos‖ e os ―princípios estratégicos‖. Com isso, é possível evidenciar, no processo de maturidade de seus textos, a construção teórica, ideológica e prática proposta por Marighella para a ALN que convergirá na ação como princípio norteador da organização, trazendo à superfície a contribuição sui generis de suas ideias para a esquerda revolucionária brasileira. O período abrangido pela pesquisa inicia-se em 1948 quando dos debates de direcionamento partidário inaugurados devido à ilegalidade que o Partido Comunista Brasileiro fora lançado e finaliza-se em 1969 com o assassinato de Carlos Marighella pela repressão militar.

In the present dissertation the formation of microstructure, the kinetics of densification and the formation of surface layers developing during liquid phase sintering of silicon carbide are studied. The focus is on the additive systems Al2O3 plus Y2O3 and AlN plus Y2O3. Phase and especially liquid phase formation in both of the systems SiC, Al2O3 , Y2O3 and AlN, Al2O3 , Y2O3 are investigated in detail examining 12 espectively 17 different compositions per system. Melting temperatures have been determined by TG/DTA, in both systems for the first time. Phase composition of samples was analysed by the combination of XRD, SEM and EDX. In the system SiC, Al2O3 , Y2O3 the formation of the phases expected from the quasibinary Al2O3 , Y2O3 could be observed thus silicon carbide has to be in equilibrium with the oxide additives. The low solubility of SiC in the oxide melt, which was suggested by Hoffmann and Nader, could be confirmed. In the system AlN, Al2O3 , Y2O3 the formation of phases as stated by Medraj was confirmed, except for the dimension of the stability region of the γ- spinel and YAG which is wider in the present work. For the first time diffusion coefficients of the species Y3+ and Al3+ in the oxide melt formed by Al2O3 and Y2O3 at temperatures above 1825 ◦ C were determined. The values are in the order of 2 · 10−6 cm2 /s which results in a diffusion length of 14.1 μm for a diffusion time of one second. This allows the fast equilibration of Y and Al deficiencies. Kinetics of densification was modeled by kinetic field, master curve and thermokinetic method, based on detailed experimental investigation of the shrinkage during liquid phase sintering of SiC. It could be proved that the first 30 − 40 % of densification are controlled by solid phase reactions which accelerate particle rearrangement without presence of a liquid phase. During the remaining 60 − 70 % of densification a liquid is present, resulting in the predominance of mechanisms of liquid phase sintering. The models deliver activation energies in the range from 608 KJ/mol to 1668 kJ/mol and allow, within the scope of validity of each method the prediction of densification during liquid phase sintering of silicon carbide. When sintering silicon carbide with Al2O3 plus Y2O3 the formation of several surface layers, depending on atmosphere, maximum temperature, dwelling time and amount and composition of additives was observed. In nitrogen atmosphere with low partial pressures a surface layer consisting of AlN is forming whilst at high partial pressures SiAlON- polytypes occur. After sintering in Argon or Ar-CO- atmosphere three main types of surface layers are present. One consists of alumina, one contains only YAG and one shows highly porous, additive depleted regions. An explanation for the formation of the several surface layers could be given by the combination of the determined diffusion coefficients with the results achieved in the thermodynamics part. The results achieved in this work can be a contribution to the knowledge based design of the production process of liquid phase sintering of silicon carbide.

Une étape cruciale dans la fabrication des MEMS de haute fréquence est la gravure par plasma de la couche mince d’AlN de structure colonnaire agissant comme matériau piézoélectrique. Réalisé en collaboration étroite avec les chercheurs de Teledyne Dalsa, ce mémoire de maîtrise vise à mieux comprendre les mécanismes physico-chimiques gouvernant la cinétique ainsi que la formation de dommages lors de la gravure de l’AlN dans des plasmas Ar/Cl2/BCl3. Dans un premier temps, nous avons effectué une étude de l’influence des conditions opératoires d’un plasma à couplage inductif sur la densité des principales espèces actives de la gravure, à savoir, les ions positifs et les atomes de Cl. Ces mesures ont ensuite été corrélées aux caractéristiques de gravure, en particulier la vitesse de gravure, la rugosité de surface et les propriétés chimiques de la couche mince. Dans les plasmas Ar/Cl2, nos travaux ont notamment mis en évidence l’effet inhibiteur de l’AlO, un composé formé au cours de la croissance de l’AlN par pulvérisation magnétron réactive et non issu des interactions plasmas-parois ou encore de l’incorporation d’humidité dans la structure colonnaire de l’AlN. En présence de faibles traces de BCl3 dans le plasma Ar/Cl2, nous avons observé une amélioration significative du rendement de gravure de l’AlN dû à la formation de composés volatils BOCl. Par ailleurs, selon nos travaux, il y aurait deux niveaux de rugosité post-gravure : une plus faible rugosité produite par la présence d’AlO dans les plasmas Ar/Cl2 et indépendante de la vitesse de gravure ainsi qu’une plus importante rugosité due à la désorption préférentielle de l’Al dans les plasmas Ar/Cl2/BCl3 et augmentant linéairement avec la vitesse de gravure. / A crucial step in the fabrication of high-frequency MEMS is the etching of the columnar AlN thin film acting as the piezoelectric material. Realized in close collaboration with researchers from Teledyne Dalsa, the objective of this master thesis is to better understand the physico-chemical mechanisms driving the etching kinetics and damage formation dynamics during etching of AlN in Ar/Cl2/BCl3 plasmas. In the first set of experiments, we have studied the influence of the operating parameters of an inductively coupled plasma on the number density of the main etching species in such plasmas, namely positive ions and Cl atoms. These measurements were then correlated with the etching characteristics, in particular the etching rate, the surface roughness, and the chemical properties of the AlN layer after etching. In Ar/Cl2 plasmas, our work has highlighted the inhibition effect of AlO, a compound formed during the AlN growth by reactive magnetron sputtering and not from plasma-wall interactions or from the incorporation of moisture in the columnar nanostructure of AlN. In presence of small amounts of BCl3 in the Ar/Cl2 plasma, we have observed a significant increase of the etching yield of AlN due to the formation of volatile BOCl compounds. Furthermore, our work has demonstrated that there are two levels of roughness following etching: a lower roughness produced by the presence of AlO in Ar/Cl2 plasmas which is independent of the etching rate and a larger roughness due to preferential desorption of Al in Ar/Cl2/BCl3 plasmas which increases linearly with the etching rate.