GaN quantum dots grown by molecular beam epitaxy are examined by micro-photoluminescence. The exciton and biexciton emission are identified successfully by power-dependence measurement. With two different samples, it can be deduced that the linewidth of the peaks is narrower in the thicker deposited layer of GaN. The size of the GaN quantum dots is responsible for the binding energy of biexciton (EbXX); EbXX decreases with increasing size of GaN quantum dots. Under polarization studies, polar plot shows that emission is strongly linear polarized. In particular, the orientation of polarization vector is not related to any specific crystallography orientation. The polarization splitting of fine-structure is not able to resolve due to limited resolution of the system. The emission peaks can be detected up to 80 K. The curves of transition energy with respect to temperature are S-shaped. Strain effect and screening of electric field account for  blueshift of transition energy, whereas Varshni equation stands for redshifting. Both blueshifting and redshifting are compensated at temperature ranging from 4 K to 40 K.

This investigation examines a novel means of integrating high-performance AlN piezoelectric thin films with a flexible stainless steel substrate (SUS 304) to fabricate a double-sided piezoelectric transducer. Various sputtering parameters, such as sputtering pressure, substrate temperature, nitrogen concentration, and RF power, were investigated to improve the piezoelectric characteristics of AlN thin films. Scanning electron microscopy and X-ray diffraction of AlN piezoelectric film reveal a rigid surface structure and highly c-axis-preferring orientation. The maximum output power per unit thickness was discussed, and the optimal sputtering parameters were determined. The double-sided piezoelectric transducer is constructed by depositing AlN piezoelectric thin films on both the front and the back sides of SUS 304 substrate. The titanium (Ti) and platinum(Pt) layers were deposited using a dual-gun DC sputtering system between the AlN piezoelectric thin film and the SUS 304 substrate. The optimal deposition parameters for AlN thin films are sputtering pressure of 5 mTorr, substrate temperature of 300 ¢J, nitrogen concentration of 40 %, and RF power of 250 W. The maximum open circuit voltage of the transducer under the vibrational frequency of 80 Hz, vibration amplitude of 4mm, and mass loading of 0.5g, is approximately 20 V, or 5.3 V/£gm. After full-wave rectification and filtering through a 33 nF capacitor, a specific output power of 1.462 £gW/cm2 is obtained from the transducer with a load resistance of 7 M£[.

Poursuivant l'essor des méta-matériaux micro-ondes et photoniques, les cristaux phononiques, organisations périodiques de matériaux acoustiquement différents présentant notamment des bandes d'arrêt, c'est-à-dire de plages de fréquences pour lesquelles aucun mode ne se propage dans la structure, laissent entrevoir des applications acoustiques hors de portée des technologies existantes. Dans cette thèse, nous visons des réalisations aux fréquences RF afin de viser des applications complémentaires des résonateurs ou des filtres acoustiques largement employés dans le domaine des transmissions sans fil. Nous avons tout d'abord développé un procédé de fabrication simple permettant de réaliser des cristaux phononiques à deux dimensions à l'échelle micrométrique sur membrane piézoélectrique, afin de rendre ces systèmes compatibles avec les composants à ondes de Lamb développés au CEA-LETI pour des applications de filtrage de canal dans des architectures de transmission sans fil faible consommation. Ce procédé a été utilisé pour réaliser des cristaux phononiques, ainsi que des résonateurs à ondes de Lamb, ou à ondes de volume et des structures plus complexes comme par exemple des filtres passe-bande. Une étude paramétrique des composants à ondes de Lamb nous a permis d'affiner notre maîtrise de ces dispositifs, ce qui nous a été utile pour la mise au point des lignes à retard permettant de caractériser les propriétés de transmission acoustique des cristaux phononiques. Du point de vue théorique, un modèle de simulation par éléments finis a été mis en place, dans un premier temps pour dimensionner les structures réalisées et prendre en compte les modifications apportées par la réalisation technologique. Nous avons ensuite réalisé des cristaux phononiques que nous avons caractérisés électriquement et optiquement, en collaboration avec l'Institut FEMTO-ST. Les mesures confirment la présence de bandes d'arrêt, aux fréquences attendues, mais d'une largeur a priori bien supérieure à celle prévue par la simulation. Une étude détaillée des diagrammes de bandes attribue ce phénomène à la présence de bandes sourdes dans le cristal ne pouvant être excitées par les transducteurs utilisés. Cet aspect est d'une importance critique dans le dimensionnement de cristaux phononiques en vue d'une utilisation dans des applications pratiques.

abstract: This work is an investigation into the information provided by the concurrent use of in situ reflection high energy electron diffraction (RHEED) and reflection electron energy loss spectroscopy (REELS). The two analytical methods were employed during growth of metal, semiconductor and superconductor thin films by molecular beam epitaxy (MBE). Surface sensitivity of the REELS spectrometer was found to be less than 1 nm for 20 KeV electrons incident at a 2 degree angle to an atomically flat film surface, agreeing with the standard electron escape depth data when adjusted incident angle. Film surface topography was found to strongly influence the REELS spectra and this was correlated with in situ RHEED patterns and ex situ analysis by comparison with atomic force microscopy (AFM). It was observed in all the experimental results that from very smooth films the plasmon peak maxima did not fall at the predicted surface plasmon values but at slightly higher energies, even for nearly atomically flat films. This suggested the REELS plasmon loss spectra are always a combination of surface and bulk plasmon losses. The resulting summation of these two types of losses shifted the peak to below the bulk plasmon value but held its minimum to a higher energy than the pure surface plasmon value. Curve fitting supported this conclusion. / Dissertation/Thesis / Ph.D. Engineering Science 2012

Submitted by Automa??o e Estat?stica (sst@bczm.ufrn.br) on 2016-04-08T22:38:21Z No. of bitstreams: 1 RobsonGuimaraesSanabio_TESE.pdf: 5116561 bytes, checksum: 312e2468286ab5c95fe5eb204d4a9168 (MD5) / Approved for entry into archive by Arlan Eloi Leite Silva (eloihistoriador@yahoo.com.br) on 2016-04-11T21:47:26Z (GMT) No. of bitstreams: 1 RobsonGuimaraesSanabio_TESE.pdf: 5116561 bytes, checksum: 312e2468286ab5c95fe5eb204d4a9168 (MD5) / Made available in DSpace on 2016-04-11T21:47:26Z (GMT). No. of bitstreams: 1 RobsonGuimaraesSanabio_TESE.pdf: 5116561 bytes, checksum: 312e2468286ab5c95fe5eb204d4a9168 (MD5) Previous issue date: 2015-05-22 / A adi??o de hidrog?nio gasoso como fonte alternativa de combust?vel vem sendo largamente utilizada. Hoje em dia, v?rias experi?ncias est?o em andamento para a utiliza??o de geradores de hidrog?nio (eletrolisadores) por demanda em ve?culos automotores. Em todos os an?ncios desses produtos seus fabricantes afirmam que este procedimento fornece uma redu??o de consumo de combust?vel, reduz os n?veis de emiss?o de gases t?xicos pela descarga e melhora a vida ?til do motor. A presente pesquisa faz uma an?lise da estrutura f?sica de pe?as de motores que utilizam eletrolisadores por demanda. Para isto, foi montado um sistema estacion?rio com um motogerador de energia el?trica, monocil?ndrico, e adaptados dois eletrolisadores um de c?lula seca e outro de c?lula molhada. Nas etapas de observa??o, foram feitas an?lises de consumo em quatro faixas de carga de trabalhos e observado o pist?o do motor, que foi cortado e analisado por microscopia ?tica (MO), Microscopia Eletr?nica de Varredura e de Energia Dispersiva (MEV-EDS), Microscopia Confocal e Difra??o de Raios - X (DRX), no sistema estacion?rio, em cada etapa. Os resultados mostraram uma redu??o consider?vel no consumo de combust?vel e uma corros?o acentuada no pist?o original de f?brica, feito de liga alum?nio-sil?cio. Como barreira ? corros?o foi feita uma nitreta??o por plasma na cabe?a do pist?o, que se mostrou resistente ao ataque pelo hidrog?nio, embora tenha apresentado evid?ncias de tamb?m ter sido atacada. Concluiu-se que os eletrolisadores automotivos podem ser uma boa op??o em termos de consumo e redu??o de emiss?es de gases t?xicos, por?m o material das c?maras de combust?o dos ve?culos devem ser preparados para este fim. / The addition of hydrogen gas as an alternative fuel source has been widely used, as well reported in scientific literature. Today, several experiments are underway for the use of hydrogen generators (electrolysers) demand for motor vehicles. In all these products their ads manufacturers claim that this provides a reduction of fuel consumption, reduces the emission levels of toxic gas by the discharge and improves engine life. This research analyzes the physical structure of engine components using electrolysis on demand. To this end, a stationary system was fitted with a power generator of electricity, drum roller and adapted two electrolyzers: a dry cell and wet cell other. In steps observation were consumption analyzes in four work load ranges and observing the piston engine, which has been cut and analyzed by Optical Microscopy (OM), Scanning Electron Microscopy and Dispersive Energy (SEM-EDS), X ? Ray Diffraction (XRD) and Confocal Microscopy, the stationary system in each step. The results showed a considerable reduction in fuel consumption and a high corrosion in the original factory piston constituted of aluminum-silicon alloy. As corrosion barrier was made a plasma nitriding in the piston head, which proved resistant to attack by hydrogen, although it has presented evidence also, of having been attacked. It is concluded that the automotive electrolysers can be a good choice in terms of consumption and reducing toxic gas emissions, but the material of the combustion chambers of vehicles must be prepared for this purpose.

Os objetivos gerais deste trabalho foram estudar o comportamento de densificação e as propriedades mecânicas do nitreto de alumínio (AlN) com aditivo de sinterização. Os objetivos específicos foram estudar: 1) o efeito do teor de Y2O3 na densificação do AlN; 2) o efeito da adição de carbono na densificação do AlN com CaO; 3) o efeito da adição simultânea de Y2O3 e CaO na densificação do AlN; 4) o efeito da porosidade nas propriedades elásticas do AlN com Y2O3 ou CaO; e 5) o efeito do teor de Y2O3 ou CaO nas propriedades mecânicas do AlN. As amostras foram sinterizadas sob atmosfera inerte em várias temperaturas (1100-2000ºC) e analisadas por determinação de densidade, difração de raios X e microscopia eletrônica de varredura. As propriedades determinadas à temperatura ambiente foram: constantes elásticas pelo método de pulso-eco ultra-sônico, resistência à flexão biaxial, dureza Vickers e tenacidade à fratura pelos métodos Indentation Fracture (KIc-IF) e Indentation Strength (KIc-IS). O AlN com Y2O3 apresentou significativa densificação por sinterização no estado sólido, mas completa densificação ocorreu somente por sinterização via fase líquida. A densificação do AlN não foi influenciada pelo aumento de 0,5% a 4% de Y2O3, pois a temperatura de formação da fase líquida (~ 1725ºC) não variou nesta faixa de teor de aditivo. Porém, a adição de carbono levou à formação de segundas-fases refratárias no AlN com 4% de Y2O3, o que atrasou sua densificação devido ao aumento da temperatura de formação da fase líquida. A adição de carbono não mudou a temperatura de formação da fase líquida do AlN com 4% de CaO sinterizado acima de 1650ºC, mas sua densificação também atrasou devido à diminuição da fração de fase líquida e ao aprisionamento de gás nos poros fechados. A adição simultânea de CaO e Y2O3 diminuiu significativamente a temperatura de sinterização do AlN em relação às adições individuais destes aditivos. O AlN com mistura de CaO e Y2O3 atingiu quase completa densificação a partir de 1650ºC devido à formação de fase líquida com composição próxima da fase CaYAl3O7, que apresentou boas características de molhamento e espalhamento nesta temperatura de sinterização. A adição de carbono mudou a composição das segundas-fases de CaYAl3O7 para CaYAlO4 e, então, para YAM (2Y2O3.Al2O3) no AlN com mistura de CaO e Y2O3, o que atrasou sua densificação em baixas temperaturas de sinterização (< 1700ºC) devido à alta viscosidade e/ou baixa molhabilidade da fase CaYAlO4 e à alta refratariedade da fase YAM. As propriedades elásticas, bem como a dureza Vickers do AlN foram influenciadas pela porosidade, mas não foram influenciadas pelo tipo (CaO e Y2O3) e teor (0,5% a 8% em massa) de aditivo de sinterização. A resistência 7 à flexão foi influenciada pelo tipo e teor de aditivo de sinterização, sendo observado um teor crítico de aditivo, acima do qual esta propriedade diminuiu significativamente e, então, tendeu a permanecer constante em função do teor de aditivo. Não se observou correlação entre tenacidade à fratura e resistência à flexão. Os valores de KIc-IS, que não variaram com o tipo e teor de aditivo de sinterização, foram considerados mais consistentes do que os valores de KIc-IF. / The general objectives of this work were to study the densification behavior and the mechanical properties of aluminum nitride (AlN) with sintering aid. The specific objectives studied were: 1) the effect of Y2O3 content on the densification of AlN, 2) the effect of carbon addition on the densification of AlN with CaO, 3) the effect of simultaneous addition of Y2O3 and CaO on the densification of AlN; 4) the effect of porosity on elastic properties of AlN with CaO or Y2O3, and 5) the effect of Y2O3 or CaO content on the mechanical properties of AlN. The samples were sintered under inert atmosphere at various temperatures (1100ºC-2000ºC) and analyzed by density measurement, X-ray diffraction and scanning electron microscopy. The properties measured at room temperature were: elastic constants by the ultrasound pulse-echo method, biaxial flexural strength, Vickers hardness and fracture toughness by the Indentation Fracture (IF) and Indentation Strength (IS) methods. AlN with Y2O3 presented significant densification by solid-state sintering, but full densification occurred only by liquid-phase sintering. The densification of AlN was not influenced by the increase of 0.5% to 4% Y2O3, since the liquid-phase formation temperature (~ 1725ºC) did not change in this range of additive content. However, the addition of carbon to AlN with 4% Y2O3 led to formation of refractory second-phases, which delayed the densification due to an increase of the liquid-phase formation temperature. The addition of carbon did not change the liquid-phase formation temperature of AlN with 4% CaO sintered above 1650ºC, but its densification delayed significantly due to the diminution of liquid-phase fraction and trapped gas in closed pores. The simultaneous addition of CaO and Y2O3 significantly diminished the sintering temperature of AlN in relation to the individual additions of these additives. AlN with simultaneous addition of CaO and Y2O3 achieved almost full densification at 1650ºC due to formation of liquid-phase with composition close to CaYAl3O7 phase, which had good wetting and spreading characteristics at this temperature. The addition of carbon changed the composition of second-phases from CaYAl3O7 to CaYAlO4 and then to YAM (2Y2O3.Al2O3) in AlN with simultaneous addition of CaO and Y2O3, delaying its densification at low sintering temperatures (< 1700ºC) due to the high viscosity and/or low wettability of CaYAlO4 phase and high refractoriness of YAM phase. The elastic properties, as well as Vickers hardness were influenced by the increase of porosity, but were not influenced by type (CaO and Y2O3) and content (0.5% to 8% in mass) of sintering aid. Flexure strength was influenced by the type and content of sintering aid. It was observed a critical additive content, 9 above which the strength decreased significantly and then tended to remain almost constant as a function of additive content. No relationship was observed between fracture toughness and flexure strength. The KIc-IS values, which did not vary with type and content of sintering aid, were found to be more consistent than the KIc-IF values.

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第14632号 / 工博第3100号 / 新制||工||1461(附属図書館) / 26984 / UT51-2009-D344 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 野田 進, 教授 川上 養一 / 学位規則第4条第1項該当

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第17574号 / 工博第3733号 / 新制||工||1569(附属図書館) / 30340 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 野田 進, 准教授 須田 淳 / 学位規則第4条第1項該当

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第17578号 / 工博第3737号 / 新制||工||1570(附属図書館) / 30344 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 川上 養一, 准教授 後藤 康仁 / 学位規則第4条第1項該当

Micro-electro-mechanical systems (MEMS) have become an essential component of a wide range ofelectronic devices over the last decades such as accelerometers, microphones, gas sensors, and filters.During this new millennium, a new radio frequency (RF) technology has been developed to satisfy thetough demands that arose due to the implementation of 5G wireless communication: bulk acoustic wave(BAW) filters.BAW devices use the piezoelectric effect, converting mechanical vibrations to electrical signals, topower wireless devices. BAW filters can operate between 3.5 GHz and 6 GHz, therefore, within therange of the new 5G. BAW technology offers lower insertion loss, higher heat dissipation, andperformances at higher power and frequency which increases the data speed considerably.This thesis will be focused on the study of the materials used in BAW devices. A common BAW filteris made from different layers distributed in a stack, from the bottom to the upper part, the BAW filteris composed of a substrate, a transducer layer made of a piezoelectric layer in between of two electrodes,and intermediate layers that can enhance the addition of the deposited layers on top called buffer layers,or the crystal quality of the films on top called seed layers.The main characteristic that a buffer layer must possess is an intermediate lattice parameter betweenthat of the substrate and the top layer. When these two layers present a high lattice mismatch, theinterface quality is rather poor. By using a buffer layer, and therefore, by adding two different interfaces,the crystal quality is improved by decreasing the internal stress and the crystal distortion. Buffer layermaterials depend on the type of materials that will be in contact with them.A seed layer is usually used to improve the crystal quality of a layer that requires extreme sputteringparameters to be used to be deposited possessing a high crystal quality and a preferred orientation. Seedlayers used in BAW devices, whose piezoelectric layer is made of AlScN or AlN, are usually made ofhighly c-axis oriented and highly crystalline AlN.The objective of this study is to analyze the deposition of AlN and HfN by means of reactive radiofrequency magnetron sputtering and reactive pulsed-direct current magnetron sputtering, respectively.AlN is largely used as a buffer layer and as a seed layer, however, the new approach of this report is tostudy the sputtering of HfN and compare it as a possible candidate to replace AlN as a seed layer.